2N6764

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DEVICES LEVELS 2N6764 2N6764T1 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 24A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 100V, Tj = +125°C VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID2 = 24A pulsed VGS = 10V, ID1 = 38A pulsed Tj = +125°C VGS = 10V, ID2 = 24A pulsed Diode Forward Voltage VGS = 0V, ID1 = 38A pulsed T4-LDS-0101 Rev. 2 (101484) Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 ± 20 38 24 150 (1) 0.055 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C 2N6764 TO-204AE (TO-3) Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 IDSS3 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 100 2.0 1.0 Max. Unit Vdc 4.0 5.0 ±100 ±200 25 1.0 0.25 0.055 0.065 0.094 1.9 Vdc 2N6764T1 (TO-254AA) nAdc µAdc mAdc mAdc Ω Ω Ω Vdc Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 38A VDS = 50V Qg(on) Qgs Qgd Min. Max. 125 22 65 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 38A, VGS = 10Vdc, Gate drive impedance = 2.35Ω, VDD = 50Vdc Symbol td(on) tr td(off) tf trr Min. Max. 35 190 170 130 500 Unit ns di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 38A ns T4-LDS-0101 Rev. 2 (101484) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS T4-LDS-0101 Rev. 2 (101484) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.15 .495 .525 12.57 13.3 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .038 .043 0.97 1.10 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS 1 S Notes 5 6 3 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. These dimensions pertain to the 2N6764 and 2N6766 types. 6. These dimensions pertain to the 2N6768 and 2N6770 types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE; for types 2N6768 and 2N6770, TO-204AA T4-LDS-0101 Rev. 2 (101484) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 Dimensions Inches Millimeters Min Max Min Max .535 .545 13.59 13.84 .249 .260 6.32 6.60 .035 .045 0.89 1.14 .510 .570 12.95 14.48 .150 BSC 3.81 BSC .150 BSC 3.81 BSC .139 .149 3.53 3.78 .665 .685 16.89 17.40 .790 .800 20.07 20.32 .040 .050 1.02 1.27 .535 .545 13.59 13.84 Drain Source Gate Notes 3, 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA). T4-LDS-0101 Rev. 2 (101484) Page 5 of 5