2N6782

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6782 2N6782U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.12 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A TC = +25°C TC = +100°C Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 ± 20 3.5 2.25 15 (1) 0.61 (2) Unit Vdc Vdc Adc Adc W Ω °C -55 to +150 TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 2.25A pulsed VGS = 10V, ID = 3.5A pulsed Tj = +125°C VGS = 10V, ID = 2.25A pulsed Diode Forward Voltage VGS = 0V, ID = 3.5A pulsed T4-LDS-0064 Rev. 1 (081246) V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 100 2.0 1.0 4.0 5.0 ±100 ±200 25 0.25 0.60 0.61 1.08 1.5 nAdc Vdc Vdc Symbol Min. Max. Unit U – 18 LCC µAdc mAdc Ω Ω Ω Vdc Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 3.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 50Vdc di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 3.5A Symbol td(on) tr td(off) tf trr Min. Max. 15 25 25 20 180 Unit Symbol Qg(on) Qgs Qgd Min. Max. 8.1 1.7 4.5 Unit nC VGS = 10V, ID = 3.5A VDS = 50V ns ns T4-LDS-0064 Rev. 1 (081246) Page 2 of 2