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2N6782U

2N6782U

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    TO247

  • 描述:

    MOSFET N-CH 100V 18LCC

  • 数据手册
  • 价格&库存
2N6782U 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6782 2N6782U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.12 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 2.25A pulsed VGS = 10V, ID = 3.5A pulsed Tj = +125°C VGS = 10V, ID = 2.25A pulsed Diode Forward Voltage VGS = 0V, ID = 3.5A pulsed T4-LDS-0064 Rev. 2 (110115) Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 ± 20 3.5 2.25 15 (1) 0.61 (2) Unit Vdc Vdc Adc Adc W Ω °C TO-205AF (formerly TO-39) -55 to +150 Symbol Min. Max. Unit V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 100 2.0 1.0 4.0 5.0 ±100 ±200 25 0.25 0.60 0.61 1.08 1.5 Vdc Vdc nAdc U – 18 LCC µAdc mAdc Ω Ω Ω Vdc Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 3.5A VDS = 50V Qg(on) Qgs Qgd Min. Max. 8.1 1.7 4.5 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time Symbol ID = 3.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 50Vdc di/dt ≤ 100A/µs, VDD ≤ 50V, ID = 3.5A IF = 3.5A td(on) tr td(off) tf trr Min. Max. 15 25 25 20 180 Unit ns ns T4-LDS-0064 Rev. 2 (110115) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CD CH HD h J k LD LL LS LU L1 L2 P Q r α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .160 .180 4.06 4.57 .335 .370 8.51 9.40 .009 .041 0.23 1.04 .028 .034 0.71 0.86 .029 .045 0.74 1.14 .016 .021 0.41 0.53 .500 .750 12.7 19.05 .200 TP 5.08 TP .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .010 0.25 45° TP 45° TP Notes 2 3 7, 8 7, 8 6 7, 8 7, 8 7, 8 5 4 9 6 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, J shall be held for a minimum length of .011 (0.28 mm). 3. Dimension k measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions for TO-205AF. T4-LDS-0064 Rev. 2 (110115) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr BL BW CH LL1 LL2 LS LS1 LS2 LW Q1 Q2 Q3 TL TW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 4. Ceramic package only. FIGURE 2. Physical dimensions for LCC. Dimensions Inches Millimeters Min Max Min Max .345 .360 8.76 9.14 .280 .295 7.11 7.49 .095 .115 2.41 2.92 .040 .055 1.02 1.40 .055 .065 1.40 1.65 .050 BSC 1.27 BSC .025 BSC 0.635 BSC .008 BSC 0.203 BSC .020 .030 0.51 0.76 .105 REF 2.67 REF .120 REF 3.05 REF .045 .055 1.14 1.40 .070 .080 1.78 2.03 .120 .130 3.05 3.30 T4-LDS-0064 Rev. 2 (110115) Page 4 of 4
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