2N6788U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature 2N6788 2N3788U 2N6788 2N3788U 2N6788 2N3788U Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 ± 20 6.0 4.5 3.5 2.8 20 (1) 14 0.30 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C TO-205AF (formerly TO-39) Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A (2N6788), 2.8A (2N6788U) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 100 2.0 1.0 4.0 5.0 Vdc U – 18 LCC Vdc IGSS1 IGSS2 ±100 ±200 nAdc T4-LDS-0164 Rev. 1 (100553) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 2.8A pulsed VGS = 10V, ID = 6.0A pulsed VGS = 10V, ID = 4.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 2.8A pulsed Diode Forward Voltage VGS = 0V, ID = 6.0A pulsed VGS = 0V, ID = 4.5A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge VDS = 50V VGS = 10V, ID = 6.0A VGS = 10V, ID = 4.5A 2N6788 2N3788U 2N6788 2N3788U 2N6788 2N3788U 2N6788 2N3788U IDSS1 IDSS2 25 0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.30 0.35 Ω Ω Ω rDS(on)3 0.54 VSD 1.8 Vdc Symbol Qg(on) Qgs Qgd Min. Max. 18.0 4.0 9.0 Unit 2N6788 2N3788U nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 6.0A, VGS = 10Vdc ID = 4.5A, VGS = 10Vdc Gate drive impedance = 7.5Ω, VDD = 35Vdc di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 6.0A IF = 4.5A 2N6788 2N3788U Symbol td(on) tr td(off) tf trr Min. Max. 40 70 40 70 240 Unit ns 2N6788 2N3788U ns T4-LDS-0164 Rev. 1 (100553) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Ltr CD CH HD h J k LD LL LS LU L1 L2 P Q r α Dimensions Inches Millimeters Min Max Min Max .305 .160 .335 .009 .028 .029 .016 .500 .016 .250 .070 .050 .010 45° TP .355 .180 .370 .041 .034 .045 .021 .750 .019 .050 6.35 1.78 1.27 0.25 45° TP 7.75 4.07 8.51 0.23 0.72 0.74 0.41 12.7 0.41 9.02 4.57 9.39 1.04 0.86 1.14 0.53 19.05 0.48 1.27 Notes 2 3 7, 8 7, 8 6 7, 8 7, 8 7, 8 5 4 9 6 .200 TP 5.08 TP NOTES: Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension k measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8 All three leads. 9 Radius (r) applies to both inside corners of tab. 10 Drain is electrically connected to the case. 11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1- Physical dimensions for TO-205AF. 1 2 3 4 5 6 T4-LDS-0164 Rev. 1 (100553) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 4 Ceramic package only. Ltr BL BW CH LL1 LL2 LS LS1 LS2 LW Q1 Q2 Q3 TL TW Dimensions Inches Millimeters Min Max Min Max .345 .360 8.77 .280 .295 7.11 .095 .115 2.41 .040 .055 1.02 .055 .065 1.40 .050 BSC 1.27 BSC .025 BSC 0.635 BSC .008 BSC 0.203 BSC .020 .030 0.51 0.76 .105 REF 2.67 REF .120 REF 3.05 REF .045 .055 1.14 1.40 .070 .080 1.78 2.03 .120 .130 3.05 3.30 * FIGURE 2 - Physical dimensions for LCC. T4-LDS-0164 Rev. 1 (100553) Page 4 of 4