2N6798_10

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed T4-LDS-0167 Rev. 1 (101021) Symbol V(BR)DSS Min. 200 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 200 ± 20 5.5 3.5 25 0.4 (1) (2) Unit Vdc Vdc Adc Adc W Ω °C -55 to +150 TO-205AF (formerly TO-39) VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc IGSS1 IGSS2 ±100 ±200 nAdc IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 25 0.25 0.4 0.42 0.75 1.4 µAdc mAdc Ω Ω Ω Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 5.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 77Vdc di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 5.5A Symbol td(on) tr td(off) tf trr Min. Max. 30 50 50 40 500 Unit Symbol Qg(on) Qgs Qgd Min. Max. 42.07 5.29 28.11 Unit nC VGS = 10V, ID = 5.5A VDS = 100V ns ns T4-LDS-0167 Rev. 1 (101021) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .305 .160 .335 .355 .180 .370 7.75 4.07 8.51 9.02 4.57 9.39 2 3 7, 8 7, 8 6 7, 8 7, 8 7, 8 5 1.27 0.25 45° TP 4 9 6 Ltr CD CH HD h J k LD LL LS LU L1 L2 P Q r α Notes .009 .041 .028 .034 .029 .045 .016 .021 .500 .750 .200 TP .016 .019 .050 .250 .070 .050 .010 45° TP 0.23 1.04 0.72 0.86 0.74 1.14 0.41 0.53 12.7 19.05 5.08 TP 0.41 0.48 1.27 6.35 1.78 NOTES: Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension k measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 7 All three leads. 8 Radius (r) applies to both inside corners of tab. 9 Drain is electrically connected to the case. 10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for TO-205AF. T4-LDS-0167 Rev. 1 (101021) Page 3 of 3 1 2 3 4 5