2N6804

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562 DEVICES LEVELS 2N6804 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Symbol VDS VGS ID1 ID2 Ptl Rds(on) Value -100 ± 20 -11 -7 75 (1) 0.3 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C 2N6804 TO-204AA (TO-3) Operating & Storage Temperature Top, Tstg Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = -7A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = -10V, ID = -7A pulsed VGS = -10V, ID = -11A pulsed Tj = +125°C VGS = -10V, ID = -7A pulsed Diode Forward Voltage VGS = 0V, ID = -11A pulsed T4-LDS-0113 Rev. 2 (101520) Symbol Min. Max. Unit V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD -100 -2.0 -1.0 -4.0 -5.0 ±100 ±200 -25 -0.25 0.3 0.36 0.55 -4.7 Vdc Vdc nAdc µAdc mAdc Ω Ω Ω Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = -11A, VGS = -10Vdc, Gate drive impedance = 7.5Ω, VDD = -35Vdc di/dt ≤ 100A/µs, VDD ≤ -50V, IF = -11A Symbol td(on) tr td(off) tf trr Min. Max. 60 140 140 140 250 Unit Symbol Qg(on) Qgs Qgd Min. Max. 29 7.1 21 Unit VGS = -10V, ID = -11A VDS = -80V nC ns ns T4-LDS-0113 Rev. 2 (101520) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .250 .360 6.35 9.15 .038 .043 0.97 0.110 .875 22.23 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .060 .135 1.52 3.43 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .655 .675 16.64 17.15 Symbol CH LD CD PS PS 1 HT LL LL1 MHD MHS HR HR1 s1 Notes 3 3 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. Measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Drain is electrically connected to case. 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions of transistor (TO-204AA). T4-LDS-0113 Rev. 2 (101520) Page 3 of 3