2N6849U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS Symbol VDS VGS Value -100 ± 20 -6.5 -4.1 25 (1) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = -10Vdc, ID = -4.1A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = -10V, ID = -4.1A pulsed VGS = -10V, ID = -6.5A pulsed Tj = -125°C VGS = -10V, ID = -4.1A pulsed Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. -100 -2.0 -1.0 -5.0 -4.0 Max. Unit Vdc Unit Vdc Vdc Adc Adc W Ω °C 2N6849 TO-205AF (formerly TO-39) SEE FIGURE 1 ID1 ID2 Ptl Rds(on) Top, Tstg 0.3 (2) -55 to +150 Vdc ±100 ±200 -25 -0.25 0.3 0.32 0.54 -4.3 nAdc µAdc mAdc Ω Ω Ω Vdc 2N3849U 18 PIN LCC SEE FIGURE 2 T4-LDS-0009 Rev. 2 (091456) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = -6.5A, VGS = -10Vdc, Gate drive impedance = 7.5Ω, VDD = -40Vdc di/dt ≤ -100A/µs, VDD ≤ -50V, IF = -6.5A Symbol td(on) tr td(off) tf trr Min. Max. 60 140 140 140 250 Unit Symbol Qg(on) Qgs Qgd Min. Max. 34.8 6.8 23.1 Unit nC VGS = -10V, ID = -6.5A VDS = -50V ns ns T4-LDS-0009 Rev. 2 (091456) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 Figure 1 – Case Outline and PIN Configuration for 2N6849 T4-LDS-0009 Rev. 2 (091456) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 Figure 2 – Case Outline and PIN Configuration for 2N6849U T4-LDS-0009 Rev. 2 (091456) Page 4 of 4