2N7228

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7228 2N7228U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 8A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 400V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 8.0A pulsed VGS = 10V, ID = 12.0A pulsed Tj = +125°C VGS = 10V, ID = 8.0A pulsed Diode Forward Voltage VGS = 0V, ID = 12A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 500 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 500 ± 20 12.0 8.0 150 (1) 0.415 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C TO-254AA 2.0 1.0 4.0 5.0 ±100 ±200 25 0.25 0.415 0.515 0.90 1.7 Vdc nAdc U-PKG (U3) TO-276AB µAdc mAdc Ω Ω Ω Vdc T4-LDS-0051 Rev. 1 (072808) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 12A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 250Vdc di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 12A Symbol td(on) tr td(off) tf trr Min. Max. 35 190 170 130 1600 Unit Symbol Qg(on) Qgs Qgd Min. Max. 120 19 70 Unit nC VGS = 10V, ID = 12A VDS = 50V ns ns T4-LDS-0051 Rev. 1 (072808) Page 2 of 2