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2N7372_1

2N7372_1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N7372_1 - PNP POWER SILICON SWITCHING TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N7372_1 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 DEVICES LEVELS 2N7372 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Symbol VCEO VCBO VEBO IC PT Tj , Tstg RθJC Value 80 100 5.5 5.0 4.0 58 -65 to +200 3 Unit Vdc Vdc Vdc Adc W °C °C/W PIN 1 = BASE PIN 2 = COLLECTOR PIN 3 = EMITTER TO-254AA Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case 1) 2) Derate linearly 22.8mW/°C for TA > 25°C Derate linearly 331mW/°C for TC > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.5Vdc V(BR)CEO ICES1 ICES2 ICEO IEBO1 IEBO2 80 Vdc Symbol Min. Max. Unit 1.0 1.0 µAdc mAdc 50 1.0 1.0 µAdc µAdc mAdc T4-LDS-0045 Rev. 1 (072805) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS (3) Symbol Min. Max. Unit Forward-Current Transfer Ratio IC = 0.05Adc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Base-Emitter Non-Saturated Voltage VCE = 5.0Vdc, IC = 2.5Adc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 5Vdc, IC = 100mAdc, f = 1kHz Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1s Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.5Adc Test 3 VCE = 80Vdc, IC = 100mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% hFE1 hFE2 hFE3 VBE VBE(sat)1 VBE(sat)2 50 70 40 --200 --1.45 Vdc 1.45 2.2 Vdc VCE(sat)1 VCE(sat)2 0.75 1.5 Vdc Symbol hfe Min. 50 Max. Unit |hfe| 7.0 Cobo 250 pF T4-LDS-0045 Rev. 1 (072805) Page 2 of 2
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