2N7373

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 DEVICES LEVELS 2N7373 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Symbol VCEO VCBO VEBO IC PT Tj , Tstg RθJC Value 80 100 5.0 5.0 4.0 58 -65 to +200 3 Unit Vdc Vdc Vdc Adc W °C °C/W PIN 1 = BASE PIN 2 = COLLECTOR PIN 3 = EMITTER Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case 1) 2) Derate linearly 22.8mW/°C for TA > 25°C Derate linearly 331mW/°C for TC > 25°C TO-254AA ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.5Vdc V(BR)CEO ICES1 ICES2 ICEO IEBO1 IEBO2 80 Vdc Symbol Min. Max. Unit SEE FIGURE 1 1.0 1.0 µAdc mAdc 50 1.0 1.0 µAdc µAdc mAdc T4-LDS-0046 Rev. 3 (091477) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS (3) Symbol Min. Max. Unit Forward-Current Transfer Ratio IC = 0.05Adc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Base-Emitter Non-Saturated Voltage VCE = 5.0Vdc, IC = 2.5Adc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 5Vdc, IC = 100mAdc, f = 1kHz Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1s Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.5Adc Test 3 VCE = 80Vdc, IC = 100mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% hFE1 hFE2 hFE3 VBE VBE(sat)1 VBE(sat)2 50 70 40 --200 --1.45 Vdc 1.45 2.2 Vdc VCE(sat)1 VCE(sat)2 0.75 1.5 Vdc Symbol hfe Min. 50 Max. Unit |hfe| 7.0 Cobo 250 pF T4-LDS-0046 Rev. 3 (091477) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 Dimensions Ltr Inches Min BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 .535 .249 .035 .510 Max .545 .260 .045 .570 Millimeters Min 13.59 6.32 0.89 12.95 Max 13.84 6.60 1.14 14.48 .150 BSC .150 BSC .139 .665 .790 .040 .535 .149 .685 .800 .050 .545 3.81 BSC 3.81 BSC 3.53 16.89 20.07 1.02 13.59 Base 3.78 17.40 20.32 1.27 13.84 Collector Emitter NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology FIGURE 1: PACKAGE DIMENSIONS T4-LDS-0046 Rev. 3 (091477) Page 3 of 3