2N918UB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Symbol VCEO VCBO VEBO IC PT Top & Tstg Value 15 30 3.0 50 200 -65 to +200 Unit Vdc Vdc Vdc mAdc mW °C TO-72 2N918 Operating & Storage Junction Temperature Range Note: 1) Derate linearly 1.14mW/°C above TA > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 3mAdc Collector-Base Cutoff Current VCB = 30Vdc VCB = 25Vdc VCB = 25Vdc; TA = +150°C Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 2.5Vdc Forward-Current Transfer Ratio IC = 0.5mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 1.0Vdc IC = 10mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc Base-Emitter Voltage IC = 10mAdc, IB = 1.0mAdc VCE(sat) VBE(sat) hFE V(BR)CEO 15 1.0 10 1.0 10 10 10 20 20 10 0.4 1.0 Vdc Vdc 200 Vdc µAdc ηAdc µAdc µAdc ηAdc Symbol Min. Max. Unit ICBO 3 PIN 2N918UB IEBO T4-LDS-0010 Rev. 3 (101342) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio IC = 4mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Noise Figure (1) VCE = 6V, IC = 1.0mA, f = 60MHz gs = 2.5mmho Small-Signal Power Gain (1) VCB = 12V, IC = 6.0mA, f = 200MHz Collector-Base Time Constant (1) VCB = 10V, IE = -4.0mA, f = 79.8MHz Oscillator Power Output (1) VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz Collector Efficiency VCB = 15V, IC = 8.0mA, f > 500MHz NOTES: (1) For more detail see MIL-PRF-19500/301 Symbol |hfe| Cobo1 Cobo2 Cibo Min. 6.0 Max. 18 3.0 1.7 2.0 Unit pF pF NF 6.0 dB Gpe Rb’CC Po n 15 25 30 25 dB ps mW % T4-LDS-0010 Rev. 3 (101342) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α .028 .036 .250 .100 .040 .048 .046 .007 45° TP .71 .91 Inches Min Max .178 .195 .170 .209 .016 .500 .016 .210 .230 .021 .750 .019 .050 6.35 2.54 1.02 1.22 1.17 .18 5 Millimeters Min Max 4.52 4.95 4.32 5.31 .406 12.70 .406 5.33 5.84 .533 19.05 .483 1 .27 5 7,8 7,8 7,8 Note 5 .100 TP 2.54 TP NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. 5. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is 7. uncontrolled in L1 and beyond LL minimum. 8. All four leads. Dimension r (radius) applies to both inside corners of tab. 9. 10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N918 (TO-72). T4-LDS-0010 Rev. 3 (101342) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 Inches Min Max .046 .056 .115 .085 .128 .108 .128 .108 .022 .017 .038 .035 Dimensions Millimeters Min Max 1.17 1.42 2.92 2.16 3.25 2.74 3.25 2.74 0.56 0.4. 0.97 0.89 Dimensions Note Symbol LS1 LS2 LW r r1 r2 Inches Min Max .036 .040 .071 .016 .079 .024 .008 .012 .022 Millimeters Min Max 0.91 1.02 1.80 0.41 2.01 0.61 .203 .305 .559 Note NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Hatched areas on package denote metallized areas. Lid material: Kovar. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N918UB, surface mount. T4-LDS-0010 Rev. 3 (101342) Page 4 of 4