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30KPA170E3/TR13

30KPA170E3/TR13

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    P600

  • 描述:

    TVS DIODE 170VWM P600

  • 数据手册
  • 价格&库存
30KPA170E3/TR13 数据手册
30KPA28Ae3 – 30KPA288CAe3 Compliant 30,000 Watt Transient Voltage Suppressor (TVS) Protection Device DESCRIPTION This device clamps dangerous high-voltage short-term transients such as those produced by the secondary effects of lightning strikes, providing circuit protection to several class levels in the IEC61000-4-5 specification. Clamping time is virtually instantaneous. It also provides protection from transients caused by inductive load dumps, RFI, and ESD, providing protection to IEC61000-4-2 and -4-4. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • Available in both unidirectional and bidirectional configurations 5% voltage tolerance Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS compliant (2002/95/EC) MSL level 1 (J-STD-020) RoHS compliant P600 Package APPLICATIONS / BENEFITS • • • Protection from transients caused by lightning strikes, switching transients, RFI, and ESD. Protection from the secondary effects of lightning per IEC61000-4-5 Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4 MAXIMUM RATINGS @ 25 ºC unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm) lead length from body Thermal Resistance, Junction to Ambient Non Repetitive Peak Forward Surge Current (1) (8.3ms single half sine wave) Rated Average Power Dissipation @ T L = 75 ºC, (2) (0.375 inch (9.5 mm) from body) Peak Pulse Power Dissipation with a 10/1000 μs waveform (see Figure 1) (3) Peak Pulse Current with a 10/1000 μs waveform Solder Temperature @ 10 s Symbol Value T J and T STG R ӨJL -55 to +175 Unit 8.0 o C/W R ӨJA I FSM 77.5 400 o C/W A P M(AV) 8.0 W P PP 30,000 W I PP See Electrical Table 260 A o o C C Notes: 1. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum 2. Mounted as shown in Figure 5 3. Non-repetitive current pulse, per Figure 3 and derated above T A = 25 ºC per Figure 2 RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 8 30KPA28Ae3 – 30KPA288CAe3 MECHANICAL and PACKAGING • • • • • • • CASE: Epoxy body meets UL94V-0 TERMINALS: Matte-tin plating, fully RoHS compliant. Solderable per MIL-STD-750, method 2026. MARKING: Manufacturer ID, date code and part number POLARITY: For unidirectional types the color band denotes the cathode, which is positive with respect to the anode under normal TVS operation. TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.07 ounce (2.0 grams) See Package Dimensions on last page. PART NOMENCLATURE 30 K P A 28 C A Peak Pulse Power e3 RoHS Compliance e3 = RoHS compliant Kilowatt Rating 5 % Voltage Tolerance Encapsulated Plastic Package Polarity C = Bi-directional Blank = Unidirectional Axial-leaded Device Stand-off Voltage Rating (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol α V(BR) ID IPP PPP V (BR) VC VW M Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 2 of 8 30KPA28Ae3 – 30KPA288CAe3 ELECTRICAL CHARACTERISTICS @ 25 ºC DEVICE BREAKDOWN VOLTAGE(2) V(BR) @ I (BR) (Volts) Min TEST CURRENT I (BR) (mA) STANDOFF VOLTAGE VWM (Volts) MAXIMUM STANDBY CURRENT(4) ID @ VWM (µA) MAXIMUM PEAK PULSE CURRENT(3) IPP (A) MAXIMUM CLAMPING VOLTAGE VC @ IPP (Volts) MAXIMUM TEMPERATURE COEFFICIENT α V(BR) (%/ °C) Max 30KPA28Ae3 / 30KPA28CAe3 31.28 34.2 50 28 5000 606.0 50.0 0.1 30KPA30Ae3 / 30KPA30CAe3 33.51 36.7 50 30 5000 548.9 55.2 0.1 30KPA33Ae3 / 30KPA33CAe3 36.90 40.4 50 33 5000 517.9 58.5 0.1 30KPA36Ae3 / 30KPA36CAe3 40.20 44.0 50 36 5000 490.3 61.8 0.1 30KPA39Ae3 / 30KPA39CAe3 43.60 47.7 20 39 2000 450.9 67.2 0.1 30KPA42Ae3 / 30KPA42CAe3 46.90 51.3 10 42 1000 420.8 72.0 0.1 30KPA43Ae3 / 30KPA43CAe3 48.00 52.6 10 43 1000 415.1 73.0 0.1 30KPA45Ae3 / 30KPA45CAe3 50.30 55.0 5 45 250 391.5 77.4 0.1 30KPA48Ae3 / 30KPA48CAe3 53.60 58.7 5 48 150 371.3 81.6 0.1 30KPA51Ae3 / 30KPA51CAe3 57.00 62.4 5 51 50 350.7 86.4 0.1 30KPA54Ae3 / 30KPA54CAe3 60.30 66.0 5 54 20 331.5 91.4 0.1 30KPA58Ae3 / 30KPA58CAe3 64.80 70.9 5 58 20 327.9 92.4 0.1 30KPA60Ae3 / 30KPA60CAe3 67.00 73.4 5 60 15 297.1 102 0.1 30KPA64Ae3 / 30KPA64CAe3 71.50 78.3 5 64 10 291.3 104 0.1 30KPA66Ae3 / 30KPA66CAe3 73.70 80.7 5 66 2 283.2 107 0.1 30KPA70Ae3 / 30KPA70CAe3 78.20 85.6 5 70 2 278.0 109 0.1 30KPA71Ae3 / 30KPA71CAe3 79.3 86.8 5 71 2 271.1 111.5 0.1 30KPA72Ae3 / 30KPA72CAe3 80.4 88.0 5 72 2 265.8 114.0 0.1 30KPA75Ae3 / 30KPA75CAe3 83.8 91.7 5 75 2 253.8 119.4 0.1 30KPA78Ae3 / 30KPA78CAe3 87.1 95.4 5 78 2 234.9 129.0 0.1 30KPA84Ae3 / 30KPA84CAe3 93.8 102.7 5 84 2 217.7 139.2 0.1 30KPA90Ae3 / 30KPA90CAe3 100.5 110.1 5 90 2 207.0 146.4 0.1 30KPA96Ae3 / 30KPA96Cae3 107.2 117.4 5 96 2 194.2 156.0 0.1 30KPA102Ae3 / 30KPA102CAe3 113.9 124.7 5 102 2 183.0 165.6 0.1 30KPA108Ae3 / 30KPA108CAe3 120.6 132.0 5 108 2 172.9 175.2 0.1 30KPA120Ae3 / 30KPA120CAe3 134.0 146.8 5 120 2 155.9 194.4 0.1 30KPA132Ae3 / 30KPA132CAe3 147.4 161.4 5 132 2 142.3 213.0 0.1 30KPA144Ae3 / 30KPA144CAe3 160.8 176.1 5 144 2 135.8 223.2 0.1 30KPA150Ae3 / 30KPA150CAe3 167.6 183.5 5 150 2 129.8 233.4 0.1 30KPA156Ae3 / 30KPA156CAe3 174.3 190.8 5 156 2 123.7 245.0 0.1 30KPA160Ae3 / 30KPA160CAe3 178.7 195.7 5 160 2 120.0 252.6 0.1 30KPA168Ae3 / 30KPA168Cae3 187.7 205.5 5 168 2 111.2 272.4 0.1 30KPA170Ae3 / 30KPA170CAe3 189.9 207.9 5 170 2 110.2 275.0 0.1 30KPA180Ae3 / 30KPA180CAe3 201.1 220.1 5 180 2 104.3 290.4 0.1 30KPA198Ae3 / 30KPA198CAe3 221.2 242.2 5 198 2 94.7 319.8 0.1 30KPA216Ae3 / 30KPA216CAe3 241.3 264.2 5 216 2 86.9 348.6 0.1 30KPA240Ae3 / 30KPA240CAe3 268.1 293.5 5 240 2 78.3 387.0 0.1 30KPA258Ae3 / 30KPA258CAe3 288.2 315.6 5 258 2 72.8 416.4 0.1 30KPA260Ae3 / 30KPA260CAe3 290.4 318.0 5 260 2 72.8 416.0 0.1 30KPA270Ae3 / 30KPA270Cae3 301.6 330.2 5 270 2 69.5 436.2 0.1 Continued on next page. RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 3 of 8 30KPA28Ae3 – 30KPA288CAe3 ELECTRICAL CHARACTERISTICS @ 25 ºC (continued) BREAKDOWN VOLTAGE(2) V(BR) @ I (BR) (Volts) DEVICE TEST CURRENT I (BR) (mA) STANDOFF VOLTAGE VWM (Volts) MAXIMUM STANDBY CURRENT(4) ID @ VWM (µA) MAXIMUM PEAK PULSE CURRENT(3) IPP (A) MAXIMUM CLAMPING VOLTAGE VC @ IPP (Volts) MAXIMUM TEMPERATURE COEFFICIENT α V(BR) (%/ °C) 30KPA280Ae3 / 30KPA280CAe3 Min 312.8 Max 342.4 5 280 2 65.3 464.0 0.1 30KPA288Ae3 / 30KPA288CAe3 321.7 352.2 5 288 2 64.5 469.9 0.1 Consult factory for higher voltages. NOTES: (1) All ratings at 25 ºC unless specified otherwise. (2) V (BR) measured after I (BR) applied for 300 µs, I (BR) = square wave pulse or equivalent. (3) Surge current waveform per Figure 3 and derated per Figure 2. (4) For bidirectional types with V WM of 30 volts and less, the I D limit is doubled. RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 4 of 8 30KPA28Ae3 – 30KPA288CAe3 PPP – Peak Pulse Power (KW) GRAPHS t d – Pulse Width (Sec.) Peak Pulse Power (PPP) or Current (lPP) Derating in Percentage % FIGURE 1 Peak Pulse Power Rating Curve T A Ambient Temperature (°C) FIGURE 2 Pulse Derating Curve RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 5 of 8 30KPA28Ae3 – 30KPA288CAe3 Pulse Current in Percent of IPP GRAPHS (continued) t – Time – ms Test waveform parameters: tr=10 µs, tp=1000µs CT, J Total Capacitance (pF) FIGURE 3 Pulse Waveform for 10/1000 Exponential Surge V (BR) – Reverse Breakdown Voltage (V) FIGURE 4 Typical Junction Capacitance RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 6 of 8 30KPA28Ae3 – 30KPA288CAe3 Steady State Power Dissipation (W) GRAPHS (continued) T L – Lead Temperature (°C) IFSM Peak Forward Surge Current (A) FIGURE 5 Steady State Power Derating Curve Number of Cycles at 60 Hz FIGURE 6 Maximum Non-repetitive Forward Surge Current RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Page 7 of 8 30KPA28Ae3 – 30KPA288CAe3 PACKAGE DIMENSIONS Dim LL BL BD LD RF01132, Rev. B (7/26/13) ©2013 Microsemi Corporation Dimensions Inch Millimeters Min Max Min Max 0.750 19.05 0.340 0.360 8.645 9.135 0.340 0.360 8.645 9.135 0.047 0.053 1.194 1.346 Page 8 of 8
30KPA170E3/TR13 价格&库存

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