3134-100

3134 -100R1 100 Watts, 36 Volts, 100µs, 10% Radar 3100-3400 MHz 3134-100 GENERAL DESCRIPTION The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõ pulse s width, 10% dut y factor across the 3100 to 3400 MHz band. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25° 1 C 570 W Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3. 0 Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 V V ° C ° C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Gain ηc Droop IRL VSWR-S VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency D ro o p Input Return Loss Stability Survivability TEST CONDITIONS F=3100-3400 MHz Vcc = 36V Pulse Width = 100 us Dut y Cycle = 10% Pin = 16W M IN 100 8.0 40 TYP M AX 135 9.3 0.5 -7 1.5:1 2.0:1 UNITS W % dB dB FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL BVebo BVces Ic e s θjc Tstg CHARACTERISTICS Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Storage Temperature TEST CONDITIONS I e = 3 0 mA Ic = 120 mA V ce = 3 6 V M IN 3.0 65 7 0.35 200 TYP MAX UNITS V V mA ° /W C ° C -65 MICROSEMI RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134 -100R1 3134 – 100 Typical Dynamic Range Data Vcc = 36 Volts, Pulse Width = 100µs, Duty = 10 % 3 1 3 4 - 1 0 0 P in v s . P o u t V cc=36V , 100u s 10% 1 6 0 .0 0 1 4 0 .0 0 1 2 0 .0 0 1 0 0 .0 0 3 .1 G H z Pou t ( W) 8 0 .0 0 3 .2 G H z 3 .3 G H z 3 .4 G H z 6 0 .0 0 4 0 .0 0 2 0 .0 0 0 .0 0 0 .0 0 2 .0 0 4 .0 0 6 .0 0 8 .0 0 1 0 .0 0 P in ( W ) 1 2 .0 0 1 4 .0 0 1 6 .0 0 1 8 .0 0 2 0 .0 0 3 1 3 4 - 1 0 0 P o u t v s . G a in V c c=3 6 V , 1 0 0 us 10 % 1 0 .0 0 8 .0 0 6 .0 0 G ain (d B) 3 .1 G H z 4 .0 0 3 .2 G H z 3 .3 G H z 3 .4 G H z 2 .0 0 0 .0 0 0 .0 0 2 0 .0 0 4 0 .0 0 6 0 .0 0 8 0 .0 0 1 0 0 .0 0 1 2 0 .0 0 1 4 0 .0 0 - 2 .0 0 Po u t (W ) MICROSEMI RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134 -100R1 3134 – 100 Input and Output Impedance Input Matching Network Output Matching Network Zin Zout Typical Impedance Values Fr e q u e n c y ( M H z ) 3100 3200 3300 3400 * Vcc = 36V, Pout = 100W min * Pulse Format: 100 uS 10% Zin(?”) 4.79 - j0.44 5.05 - j0.38 5.29 - j0.37 5.50 - j0.39 Zout(?”) 5.51 – j5.76 5.10 – j5.68 4.75 – j5.55 4.47 – j5.38 MICROSEMI RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134 -100R1 3134 – 100 Broadband Test Circuit PCB Material: Rogers RT6010, Er 10.2, 25mil Designation M1 M2 M3 M4 M5 M6 M7 M8 M9 M1 0 M1 1 M1 2 M1 3 Circuit Dimensions W (mil) L (m i l ) 22 112 103 68 22 115 266 113 78 62 35 345 400 160 450 150 86 188 255 84 22 135 99 83 22 245 Designation C1 C2 C3 C4 R1 L1 Component List Value 2200 uF 100 pF 10000 pF 10 pF 8.2 ohms 20 AWG wire Size Electrolytic ATC B ATC B ATC A 1206 400 mil MICROSEMI RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134 -100R1 3134 – 100 MICROSEMI RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.