6510A

6510A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent over-voltage on the supply rail. They may also be used in fast switching coredriver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM 16-PIN Ceramic Flat Pack FEATURES • • • • • • • Hermetic Ceramic Package Isolated Diodes to Eliminate Cross-Talk Voltages High Breakdown Voltage VBR > 75 V at 5 μA Low Leakage IR< 100nA at 40 V Low Capacitance Ct < 4.0 pF Switching Speeds less than 10 ns Options for screening in accordance with MIL-PRF19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or SP prefixes respectively to part numbers. For example, designate MX6510A for a JANTX screen. • • • • • • • APPLICATIONS / BENEFITS High Frequency Data Lines RS-232 & RS-422 Interface Networks Ethernet: 10 Base T Computer I/O Ports LAN Switching Core Drivers IEC 61000-4 Compatible (See Circuit in Figure 1) 61000-4-2 (ESD): Air 15 kV, contact – 8 kV 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A, 8/20 µs MAXIMUM RATINGS • • • • • • • Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2) Continuous Forward Current of 300 mA dc (Note 1 & 3) Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1) 400 mW Power Dissipation per Junction @ 25oC 500 mW Power Dissipation per Package @ 25oC (Note 4) Operating Junction Temperature range –65 to +150oC o Storage Temperature range of –65 to +150 C NOTE 1: NOTE 2: NOTE 3: NOTE 4: Each Diode Pulsed: PW = 100 ms max.; duty cycle