AAHS298BS-S20B-S

AAHS298B Radiation Tolerant 8-channel Source Driver Description Features The AAHS298B is part of Microsemi’s new family of Radiation Tolerant products aimed at the aerospace and defense markets. The AAHS298B is a RadiationTolerant source driver with eight non-inverting channels, with internal thermal shutdown.  700mA Output Source Current  Zero Quiescent Off Current  Full Channel Isolation to Prevent Fault Propagation  Internal Ground Clamp Diodes  75V Output Breakdown Voltage  TTL, 5V and 12V Logic Compatible  Internal Thermal Shutdown  Radiation tolerant to 100kRad(Si) Total Dose, 50kRad (Si) ELDRS  -55°C to +125°C Temperature Range  Available in 20-pin Ceramic SOIC with formed and flat Leads  QML-V and QML-Q Qualified Capable of providing an interface from TTL, 5V or 12V logic systems to relays, motors, solenoids, and other loads, this device adds the additional benefit of an internal thermal shutdown and output transient protection/clamp diodes with sustaining voltages to 75V. Each output is capable of sourcing 700mA with a withstand voltage of 75V over the full military temperature range. The thermal shutdown is intended to protect against over-current and soft-start occurrences. The AAHS298B is offered in 20-pin ceramic SOIC package with formed and flat leads. The AAHS298B has demonstrated tolerance to 100kRad (Si) total dose (min), 50kRad (Si) ELDRS (min), as well as immunity to latch-up and SEE tolerance. Available standard screening includes Level “S” or Level “B,” Other screening or processing in line with our capabilities can be supported to meet customers’ requirements. Applications     Relay/Solenoid Drivers Lamp/LED Drivers Stepper and/or Servo Motor Drivers Redundant Power Distribution Product Highlight VS2 VS1 AAHS298B 20 1 20 11 10 11 10 2 19 2 19 12 9 12 9 3 18 3 18 13 8 13 8 4 17 4 17 14 7 14 7 5 16 5 16 15 6 15 6 6 15 6 15 16 5 16 5 7 14 7 14 17 4 17 4 8 13 8 13 18 3 18 3 9 1 0 12 9 12 19 2 19 11 10 11 20 1 20 1 IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 VS1 LX7710 LX7710 2 AAHS298B IN8 IN7 IN6 IN5 IN4 IN3 IN2 IN1 1 VS2 CH1 Power Bus CH2 Power Bus CH3 Power Bus CH4 Power Bus CH5 Power Bus CH6 Power Bus CH7 Power Bus CH8 Power Bus Figure 1 · Redundant Switchable Power Bus March 2016 Rev. 1.4 www.microsemi.com © 2015 Microsemi Corporation- Analog Mixed Signal 1 Pin Configuration and Pinout Pin Configuration and Pinout 1 20 2 19 3 18 4 5 6 7 8 MSC-S AAHS298B 1MN37 YYWW XXX VS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 VS 17 16 15 14 13 9 12 10 11 GND OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 GND S20 PACKAGE (Top View) YYWW XXX = Year/Week/Serial Number S Flow marking shown i.e. MSC-S Ordering Information Ambient Temperature -55°C to 125°C Type Package Hermetic CSOIC 20L Flat Lead Part Number Flow AAHS298B-07-4020A-EV Equivalent to Class V AAHS298B-06-4020A-EQ Equivalent to Class Q Tray AAHS298B-S-S20B-S SMD 5962-1523101VXA -55°C to 125°C Hermetic 0°C to 70°C AAHS298B Rev. 1.4 CSOIC 20L Packaging Type AAHS298B-S-S20B-B SMD 5962-1523101QXA AAHS298B-S-S20B-ENGR QML-V QML- Q Tray Commercial 2 Pin Description Pin Description Pin Number Pin Designator 1, 10 Supply Voltage 2-9 IN[1:8] 11, 20 GND 12-19 OUT[1:8] Description Input Supply Voltage, both pins should be externally connected on the PCB to improve the internal current distribution and allow the device to safely provide the maximum 2800mA of continuous supply current. 8 Logic Inputs, TTL, CMOS & High Voltage (12V) compatible. With all inputs low the device is in sleep mode. Ground, both pins should be externally connected externally on the PCB to improve the internal current distribution and improve forward voltage of the flyback clamping diodes. 700mA Source Outputs. Block Diagram VS 1 20 GND IN1 2 19 OUT1 IN2 3 18 OUT2 IN3 4 17 OUT3 IN4 5 16 OUT4 IN5 6 15 OUT5 IN6 7 14 OUT6 IN7 8 13 OUT7 IN8 9 12 OUT8 VS 10 11 GND Input Level Shift Bias & Controls Figure 2 · AAHS298B Simplified Block Diagram AAHS298B Rev. 1.4 3 Absolute Maximum Ratings Absolute Maximum Ratings Parameter Supply Voltage (VS, Max voltage between VS and GND) Digital Inputs (IN[1:8], Max voltage between INPUT & GND) Output Voltage (OUT[1:8], Maximum voltage between OUT[1:8] and GND) Single Output Continuous Current (OUT[1:8]) Single Output Peak Current (OUT[1:8], ≤ 1 second) Multiple Output Simultaneously Continuous Current (OUT[1:8]) ESD (all pins, HBM) Operating Junction Range Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) Peak Package Solder Reflow Temp. (40 sec. max. exp.) Lead Temperature. (Soldering 10 seconds) Value -0.5 to 75 -0.5 to 15 Units V V 75 V -700 -1200 -2800 2000 -55 to 150 -65 to 150 300 mA mA mA V °C °C °C 260 (+0, -5) °C 300 °C Exceeding these ratings could cause damage to the device. All voltages are with respect to GND. Currents are positive into, negative out of specified terminal. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” are not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Thermal Data Parameter S20 Package: Thermal Resistance-Junction to Case, θJC Value Units 2.24 °C/W Note: The θJC number is for conduction only to the ceramic base of the package. It assumes that the ceramic base has a thermal epoxy underneath the ceramic package to exhaust the heat from the package into the PCB, or other mounting surface. AAHS298B Rev. 1.4 4 Electrical Characteristics Electrical Characteristics ° Unless otherwise stated the following specifications apply over operating ambient temperature of -55 C < ° Temp < 125 C, VS = 50V, 100kRad (Si) TID (min), 50kRad (Si) ELDRS (min) Symbol Parameter Test Condition Test Setup Min Typ Max 1 20 5 25 7 25 Units Operating Supply Current ISLEEP Standby Supply Current IN[1:8] = 0.0V, No Output Load IVS2.5 Active Supply Current IN[1:8] = 2.5V, No Output Load IVS5 Active Supply Current IN[1:8] = 5.0V, No Output Load 1 2 µA mA AC Characteristics ton toff tR tF Output Turn On Delay Time Output Turn Off Delay Time Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) 2 10 Load = 470Ω, 100pF, VS = 45V VIL = 0.8; VIH = 2.5V µs 2 10 DC Characteristics VS THSDTRIP THSDRST Thermal Shutdown Trip Temperature Thermal Shutdown Reset Temperature VIH Input High Level VIL Input Low Level VCESAT VCESAT 10 Supply Voltage Range 135 50 155 V 175 ºC Restarts at 125ºC 125 2.5 3 Output Saturation at 350mA Output Saturation at 500mA VCESAT Output Saturation at 700mA IIH Input High Leakage 0.8 IN[1:8] = 2.5V 4 IN[1:8] = 5.0V 1.7 2.2 1.8 2.3 2.1 2.7 60 100 0.1 10 2 50 V 5 IIL Input Low Leakage IN[1:8] = 0.0V IOL Output Low Leakage Output OFF, VOUTX = 0.0V Clamp Diode Forward Voltage IF = 200mA VF IR Clamp Diode Leakage Current AAHS298B Rev. 1.4 6 2.5 7 IF = 700mA VR = 50V µA V 3.0 8 50 µA 5 Parameter Test Configurations Parameter Test Configurations (See test setup numbers in Electrical Characteristics Table) VS VS ISLEEP µ A IVSx m A VIN VS VIN VIN OPEN VOUT OPEN V V Test Setup 1 Standby Supply Current Test Setup 2 Active Supply Current Test Setup 3 Input Threshold Voltage VS VS VS VSAT V VIN VIN mA IOUT µA VIN VOUT IC VOUT µA ICEX Test Setup 4 VCE(sat) Test Circuit Test Setup 5 Input Bias Current Test Setup 6 Output Leakage Current OPEN VS µA OPEN VIN VOUT VF V VIN VOUT IF Test Setup 7 Clamp Diode Forward Voltage AAHS298B Rev. 1.4 IR Test Setup 8 Clamp Diode Leakage Current 6 Single Channel Block Diagram Single Channel Block Diagram VS Bias & Controls 2k Input ESD Diode 60k TTL, CMOS & High-Level Compatible 300 60k Thermal Shutdown ESD Diode 1k OUTPUT Inductive Kickback Clamp Diode 200mA DC, 700mA 10ms GND Figure 3 · AAHS298B Single Channel Simplified Block Diagram Application Information VS Pins The AAHS298B has two VS (Input Supply) pins (pins 1, 10). The maximum 2800mA total supply current limit for the AAHS298B comes from the supply bond wires current capability, these bond wires will fuse open around 2A each. By externally connecting these two pins on the printed-circuit board the utilization of two pins one at each end of the package improves the internal current distribution. With only one VS pin connected, the saturation voltage would progressively increase from the near to the far channel due to internal IR losses in the die metallization, and the part will not be capable of the full 2800mA, only 1400mA. IN Pins The IN (Inputs) pins are compatible with TTL (5V), CMOS (3V) & High-Level (12V) logic levels and not only turn on their respective output but also provide bias to the device activating for instance the thermal shutdown circuitry. Conversely if all IN pins are low the device is off with no quiescent current, and the device is in sleep mode. AAHS298B Rev. 1.4 7 Application Information OUT Pins The OUT (Output) pins are switched high-side drivers designed to output 700mA continuous current with a typical saturation voltage drop of 2.1V. See figure 4 for the typical saturation voltages with changes in output current and temperature. At the rated maximum continuous operating current which is 700mA, the saturation voltage still has a negative temperature coefficient as indicated in the chart. This is advantageous since it reduces the power dissipation when the device operates at elevated temperatures. Above 700mA the saturation increases more rapidly and due to the design of the output transistors the output current self-limits itself around 1.4A, but could reach the bond-wire fusing current of 2A on a "dead" short-circuit condition in a matter of milliseconds. This is a protection feature designed to isolate a shorted output under overstress while allowing the remaining outputs to function normally. The 700mA per channel current was therefore determined to be around 50% of the drive maximum capability of the output transistors. Thermal Shutdown The thermal shut-down circuitry is located in the center of the die between channels 4 & 5. The die being relatively thick, and the silicon being a good conductor of heat, the temperature gradient at the surface of the die, say between channel #1 and #4 cannot exceed a few degrees centigrade. When all channels are dissipating power, the Junction to Case Thermal Resistance is less than 3°C/W when measured between the junctions at the surface of the silicon and the bottom of the ceramic package. The Junction to Case thermal resistance for one channel only is less than 20°C/W. When the package is mounted with a heat pad under it on a PCB equipped with an integral heat-sink, the Junction to PCB thermal resistance could be of the order of 10°C/W, and in this condition which we have verified, it is almost impossible for the thermal shut-down circuitry to trip. On the contrary, if the part is simply mounted on the PCB with no heat sinking we have been able to make the thermal shutdown trip with the PCB at room temperature with 4 channels ON at full load (2800mA total creating approximately 6W of power dissipation). There is a time constant associated with the thermal shut-down circuitry which measures in seconds and this is why we cannot rely on it to protect the part against "dead" short-circuits during which the current could exceed 2A and blow the bond wire in 10 to 20mS. Clamp Diodes Each output channel includes an integrated clamp diode to protect against possible inductive kick-backs. These diodes are rated for 200mA DC current at a maximum of 2.5V, and can withstand 700mA for about 10ms. Like the VS pins by externally connecting the two GND pins together on the printed-circuit board the utilization of both pins one at each end of the package improves the internal current distribution and losses. It is very important to recirculate any flyback current close to the source to minimize noise issues. When using the AAHS298B’s built-in output transient suppression diodes for this purpose the PCB layout or wiring should insure that the digital input side and output power sides do not share ground paths, and the conductors and/or traces are sized accordingly. When the proximity of the inductive load is some distance from the driver then an additional ‘freewheel diode’, or snubber circuit may be required to minimize noise and clamp voltage excursions. If using the internal diode causes other complications (delay times, etc.) a varistor or transorb may be used instead. Keeping the power and digital grounds separate and only connecting them at the one star ground point should minimize and ground loop or bounce issues. AAHS298B Rev. 1.4 8 Characteristic Curves Characteristic Curves 2.4 TYPICAL AAHS298B OUTPUT VCE SATURATION VOLTAGE VS TEMPERATURE 2.2 VCESat (V) 2.0 1.8 1.6 1.4 10mA 100mA 300mA 350mA 500mA 700mA 1.2 1.0 0.8 -55 -35 -15 5 25 45 65 85 105 125 Temperature (°C) Figure 4 · Typical Output VCE vs Saturation Voltage MAXIMUM CHANNEL OUTPUT CURRENT VS DUTY CYCLE Maximum Peak Output Current (mA) 800 750 Maximum Continous Output Current 700 650 600 5 550 500 8 450 6 7 400 Number of Outputs Conducting Simltaneously VS = 50V 350 300 250 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Duty Cycle (%) Figure 5 · Maximum Channel Output vs Duty Cycle (≤ 4 channels may be operated continuously at maximum current within package power limitations) AAHS298B Rev. 1.4 9 Package Outline Dimensions Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. Dim A 2.28 A1 D 20 11 E2 E1 E 1 10 e MILLIME ERS MIN MAX 2.92 INCHES MIN MAX 0.090 0.115 0.38 0.015 A2 1.78 2.41 0.070 0.095 b 0.36 0.48 .0140 .0190 c 0.15 0.25 0.006 0.010 D 12.45 13.08 0.490 0.515 E 10.16 11.18 0.400 0.440 E1 7.24 7.62 0.285 0.300 1 L b A c A2 A1 E2 4.70 BSC 0.185 BSC e 1.27 BSC 0.050 BSC L 0.50 0.76 0.020 0.030 Figure 6 · S20 20-Lead Ceramic SOIC Package Dimensions Dim MIN MAX MIN MAX A 2.28 2.92 0.090 0.115 A2 1.78 2.41 0.070 0.095 b 0.36 0.48 .0140 .0190 c 0.15 0.25 0.006 0.010 D 12.45 13.08 0.490 0.515 E 21.00 23.00 0.827 0.906 E1 7.24 7.62 0.285 0.300 D 20 11 E E2 E1 1 e 10 1 b A INCHES MILLIMETERS A2 c E2 4.70 BSC 0.185 BSC e 1.27 BSC 0.050 BSC Figure 7 · S20 20-Lead Ceramic SOIC Package with Flat Leads Dimensions AAHS298B Rev. 1.4 10 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: sales.support@microsemi.com © 2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. 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