AFS090

Revision 2 Fusion Family of Mixed Signal FPGAs Features and Benefits High-Performance Reprogrammable Flash Technology • • • • Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process Nonvolatile, Retains Program when Powered Off Live at Power-Up (LAPU) Single-Chip Solution 350 MHz System Performance In-System Programming (ISP) and Security • ISP with 128-Bit AES via JTAG • FlashLock® Designed to Protect FPGA Contents Advanced Digital I/O • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages – Up to 5 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V /1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and LVCMOS 2.5 V / 5.0 V Input • Differential I/O Standards: LVPECL, LVDS, B-LVDS, M-LVDS – Built-In I/O Registers – 700 Mbps DDR Operation • Hot-Swappable I/Os • Programmable Output Slew Rate, Drive Strength, and Weak Pull-Up/Down Resistor • Pin-Compatible Packages across the Fusion® Family Embedded Flash Memory • User Flash Memory – 2 Mbits to 8 Mbits – Configurable 8-, 16-, or 32-Bit Datapath – 10 ns Access in Read-Ahead Mode • 1 Kbit of Additional FlashROM Integrated A/D Converter (ADC) and Analog I/O • • • • • • Up to 12-Bit Resolution and up to 600 Ksps Internal 2.56 V or External Reference Voltage ADC: Up to 30 Scalable Analog Input Channels High-Voltage Input Tolerance: –10.5 V to +12 V Current Monitor and Temperature Monitor Blocks Up to 10 MOSFET Gate Driver Outputs – P- and N-Channel Power MOSFET Support – Programmable 1, 3, 10, 30 µA, and 20 mA Drive Strengths • ADC Accuracy is Better than 1% SRAMs and FIFOs • Variable-Aspect-Ratio 4,608-Bit SRAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations available) • True Dual-Port SRAM (except ×18) • Programmable Embedded FIFO Control Logic Soft ARM Cortex-M1 Fusion Devices (M1) • ARM® Cortex-™M1–Enabled On-Chip Clocking Support • • • • Internal 100 MHz RC Oscillator (accurate to 1%) Crystal Oscillator Support (32 KHz to 20 MHz) Programmable Real-Time Counter (RTC) 6 Clock Conditioning Circuits (CCCs) with 1 or 2 Integrated PLLs – Phase Shift, Multiply/Divide, and Delay Capabilities – Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz Pigeon Point ATCA IP Support (P1) • Targeted to Pigeon Point® Board Management Reference (BMR) Starter Kits • Designed in Partnership with Pigeon Point Systems • ARM Cortex-M1 Enabled • Targeted to Advanced Mezzanine Card (AdvancedMC™ Designs) • Designed in Partnership with MicroBlade • 8051-Based Module Management Controller (MMC) Low Power Consumption • Single 3.3 V Power Supply with On-Chip 1.5 V Regulator • Sleep and Standby Low-Power Modes MicroBlade Advanced Mezzanine Card Support (U1) Table 1 • Fusion Family Fusion Devices ARM Cortex-M1* Devices Pigeon Point Devices MicroBlade Devices System Gates Tiles (D-flip-flops) General Information Secure (AES) ISP PLLs Globals Flash Memory Blocks (2 Mbits) Total Flash Memory Bits Memory FlashROM Bits RAM Blocks (4,608 bits) RAM kbits Analog Quads Analog Input Channels Analog and I/Os Gate Driver Outputs I/O Banks (+ JTAG) Maximum Digital I/Os Analog I/Os 90,000 2,304 Yes 1 18 1 2M 1,024 6 27 5 15 5 4 75 20 250,000 6,144 Yes 1 18 1 2M 1,024 8 36 6 18 6 4 114 24 AFS090 AFS250 M1AFS250 AFS600 M1AFS600 P1AFS600 U1AFS600 600,000 13,824 Yes 2 18 2 4M 1,024 24 108 10 30 10 5 172 40 1,500,000 38,400 Yes 2 18 4 8M 1,024 60 270 10 30 10 5 252 40 AFS1500 M1AFS1500 P1AFS1500 Note: *Refer to the Cortex-M1 product brief for more information. March 2012 © 2012 Microsemi Corporation I Fusion Family of Mixed Signal FPGAs Fusion Device Architecture Overview Bank 0 Bank 1 CCC SRAM Block 4,608-Bit Dual-Port SRAM or FIFO Block OSC I/Os CCC/PLL VersaTile Bank 4 Bank 2 ISP AES Decryption User Nonvolatile FlashROM Charge Pumps SRAM Block 4,608-Bit Dual-Port SRAM or FIFO Block Flash Memory Blocks ADC Flash Memory Blocks Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad CCC Bank 3 Figure 1 • Fusion Device Architecture Overview (AFS600) Package I/Os: Single-/Double-Ended (Analog) Fusion Devices ARM Cortex-M1 Devices Pigeon Point Devices MicroBlade Devices QN108 QN180 PQ208 3 FG256 FG484 FG676 75/22 (20) 37/9 (16) 60/16 (20) 65/15 (24) 93/26 (24) 114/37 (24) 95/46 (40) 119/58 (40) 172/86 (40) 119/58 (40) 223/109 (40) 252/126 (40) AFS090 AFS250 M1AFS250 AFS600 M1AFS600 P1AFS600 1 U1AFS600 2 AFS1500 M1AFS1500 P1AFS1500 1 Notes: 1. Pigeon Point devices are only offered in FG484 and FG256. 2. MicroBlade devices are only offered in FG256. 3. Fusion devices in the same package are pin compatible with the exception of the PQ208 package (AFS250 and AFS600). II R ev i si o n 2 Fusion Family of Mixed Signal FPGAs Product Ordering Codes M1AFS600 _ 1 FG G 256 Y I Application (junction temperature range) Blank = Commercial (0 to +85°C) I = Industrial (–40 to +100°C) PP = Pre-Production ES = Engineering Silicon (room temperature only) Security Feature Y = Device Includes License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio Package Lead Count Lead-Free Packaging Options Blank = Standard Packaging G = RoHS-Compliant (green) Packaging Package Type QN = Quad Flat No Lead (0.5 mm pitch) 1 PQ = Plastic Quad Flat Pack (0.5 mm pitch) FG = Fine Pitch Ball Grid Array (1.0 mm pitch) 2 Speed Grade Blank = Standard 1 = 15% Faster than Standard 2 = 25% Faster than Standard Part Number Fusion Devices AFS090 = AFS250 = AFS600 = AFS1500 = 90,000 System Gates 250,000 System Gates 600,000 System Gates 1,500,000 System Gates ARM-Enabled Fusion Devices M1AFS250 = 250,000 System Gates M1AFS600 = 600,000 System Gates M1AFS1500 = 1,500,000 System Gates Pigeon Point Devices P1AFS600 = 600,000 System Gates P1AFS1500 = 1,500,000 System Gates MicroBlade Devices U1AFS600 = 600,000 System Gates Notes: 1. For Fusion devices, Quad Flat No Lead packages are only offered as RoHS compliant, QNG packages. 2. MicroBlade and Pigeon Point devices only support FG packages. Fusion Device Status Fusion AFS090 AFS250 AFS600 AFS1500 Status Production Production Production Production M1AFS250 M1AFS600 M1AFS1500 Production Production Production P1AFS600 P1AFS1500 Production Production U1AFS600 Production Cortex-M1 Status Pigeon Point Status MicroBlade Status R e visi on 2 III Fusion Family of Mixed Signal FPGAs Temperature Grade Offerings Fusion Devices ARM Cortex-M1 Devices Pigeon Point Devices MicroBlade Devices QN108 QN180 PQ208 FG256 FG484 FG676 C, I C, I – C, I – – – C, I C, I C, I – – AFS090 AFS250 M1AFS250 AFS600 M1AFS600 P1AFS600 – – C, I C, I C, I – 3 AFS1500 M1AFS1500 P1AFS1500 3 – – – C, I C, I C, I U1AFS600 4 Notes: 1. C = Commercial Temperature Range: 0°C to 85°C Junction 2. I = Industrial Temperature Range: –40°C to 100°C Junction 3. Pigeon Point devices are only offered in FG484 and FG256. 4. MicroBlade devices are only offered in FG256. Speed Grade and Temperature Grade Matrix Std.1 C3 I4 –1 –22 ✓ ✓ ✓ ✓ ✓ ✓ Notes: 1. MicroBlade devices are only offered in standard speed grade. 2. Pigeon Point devices are only offered in –2 speed grade. 3. C = Commercial Temperature Range: 0°C to 85°C Junction 4. I = Industrial Temperature Range: –40°C to 100°C Junction Contact your local Microsemi SoC Products Group representative for device availability: http://www.microsemi.com/soc/contact/offices/index.html. Cortex-M1, Pigeon Point, and MicroBlade Fusion Device Information This datasheet provides information for all Fusion (AFS), Cortex-M1 (M1), Pigeon Point (P1), and MicroBlade (U1) devices. The remainder of the document will only list the Fusion (AFS) devices. Please apply relevant information to M1, P1, and U1 devices when appropriate. Please note the following: • • • Cortex-M1 devices are offered in the same speed grades and packages as basic Fusion devices. Pigeon Point devices are only offered in –2 speed grade and FG484 and FG256 packages. MicroBlade devices are only offered in standard speed grade and the FG256 package. IV R ev i si o n 2 Fusion Family of Mixed Signal FPGAs Table of Contents Fusion Device Family Overview Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 Unprecedented Integration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4 Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-10 Device Architecture Fusion Stack Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1 Core Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-2 Clocking Resources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-19 Real-Time Counter System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-33 Embedded Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-41 Analog Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-78 Analog Configuration MUX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-128 User I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-134 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-225 Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-229 DC and Power Characteristics General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1 Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10 Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-32 Package Pin Assignments QN108 QN180 PQ208 FG256 FG484 FG676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-27 Datasheet Information List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1 Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16 Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16 Revision 2 V 1 – Fusion Device Family Overview Introduction The Fusion mixed signal FPGA satisfies the demand from system architects for a device that simplifies design and unleashes their creativity. As the world’s first mixed signal programmable logic family, Fusion integrates mixed signal analog, flash memory, and FPGA fabric in a monolithic device. Fusion devices enable designers to quickly move from concept to completed design and then deliver feature-rich systems to market. This new technology takes advantage of the unique properties of Microsemi flashbased FPGAs, including a high-isolation, triple-well process and the ability to support high-voltage transistors to meet the demanding requirements of mixed signal system design. Fusion mixed signal FPGAs bring the benefits of programmable logic to many application areas, including power management, smart battery charging, clock generation and management, and motor control. Until now, these applications have only been implemented with costly and space-consuming discrete analog components or mixed signal ASIC solutions. Fusion mixed signal FPGAs present new capabilities for system development by allowing designers to integrate a wide range of functionality into a single device, while at the same time offering the flexibility of upgrades late in the manufacturing process or after the device is in the field. Fusion devices provide an excellent alternative to costly and timeconsuming mixed signal ASIC designs. In addition, when used in conjunction with the ARM Cortex-M1 processor, Fusion technology represents the definitive mixed signal FPGA platform. Flash-based Fusion devices are live at power-up. As soon as system power is applied and within normal operating specifications, Fusion devices are working. Fusion devices have a 128-bit flash-based lock and industry-leading AES decryption, used to secure programmed intellectual property (IP) and configuration data. Fusion devices are the most comprehensive single-chip analog and digital programmable logic solution available today. To support this new ground-breaking technology, Microsemi has developed a series of major tool innovations to help maximize designer productivity. Implemented as extensions to the popular Microsemi Libero® Integrated Design Environment (IDE), these new tools allow designers to easily instantiate and configure peripherals within a design, establish links between peripherals, create or import building blocks or reference designs, and perform hardware verification. This tool suite will also add comprehensive hardware/software debug capability as well as a suite of utilities to simplify development of embedded soft-processor-based solutions. General Description The Fusion family, based on the highly successful ProASIC®3 and ProASIC3E flash FPGA architecture, has been designed as a high-performance, programmable, mixed signal platform. By combining an advanced flash FPGA core with flash memory blocks and analog peripherals, Fusion devices dramatically simplify system design and, as a result, dramatically reduce overall system cost and board space. The state-of-the-art flash memory technology offers high-density integrated flash memory blocks, enabling savings in cost, power, and board area relative to external flash solutions, while providing increased flexibility and performance. The flash memory blocks and integrated analog peripherals enable true mixed-mode programmable logic designs. Two examples are using an on-chip soft processor to implement a fully functional flash MCU and using high-speed FPGA logic to offer system and power supervisory capabilities. Live at power-up and capable of operating from a single 3.3 V supply, the Fusion family is ideally suited for system management and control applications. The devices in the Fusion family are categorized by FPGA core density. Each family member contains many peripherals, including flash memory blocks, an analog-to-digital-converter (ADC), high-drive outputs, both RC and crystal oscillators, and a real-time counter (RTC). This provides the user with a high level of flexibility and integration to support a wide variety of mixed signal applications. The flash memory block capacity ranges from 2 Mbits to 8 Mbits. The integrated 12-bit ADC supports up to 30 independently configurable input channels. The on-chip crystal and RC oscillators work in conjunction Revision 2 1 -1 Fusion Device Family Overview with the integrated phase-locked loops (PLLs) to provide clocking support to the FPGA array and on-chip resources. In addition to supporting typical RTC uses such as watchdog timer, the Fusion RTC can control the on-chip voltage regulator to power down the device (FPGA fabric, flash memory block, and ADC), enabling a low power standby mode. The Fusion family offers revolutionary features, never before available in an FPGA. The nonvolatile flash technology gives the Fusion solution the advantage of being a highly secure, low power, single-chip solution that is live at power-up. Fusion is reprogrammable and offers time-to-market benefits at an ASIC-level unit cost. These features enable designers to create high-density systems using existing ASIC or FPGA design flows and tools. Flash Advantages Reduced Cost of Ownership Advantages to the designer extend beyond low unit cost, high performance, and ease of use. Flashbased Fusion devices are live at power-up and do not need to be loaded from an external boot PROM. On-board security mechanisms prevent access to the programming information and enable remote updates of the FPGA logic that are protected with high level security. Designers can perform remote insystem reprogramming to support future design iterations and field upgrades, with confidence that valuable IP is highly unlikely to be compromised or copied. ISP can be performed using the industrystandard AES algorithm with MAC data authentication on the device. The Fusion family device architecture mitigates the need for ASIC migration at higher user volumes. This makes the Fusion family a cost-effective ASIC replacement solution for applications in the consumer, networking and communications, computing, and avionics markets. Security As the nonvolatile, flash-based Fusion family requires no boot PROM, there is no vulnerable external bitstream. Fusion devices incorporate FlashLock, which provides a unique combination of reprogrammability and design security without external overhead, advantages that only an FPGA with nonvolatile flash programming can offer. Fusion devices utilize a 128-bit flash-based key lock and a separate AES key to provide the highest level of protection in the FPGA industry for programmed IP and configuration data. The FlashROM data in Fusion devices can also be encrypted prior to loading. Additionally, the flash memory blocks can be programmed during runtime using the industry-leading AES-128 block cipher encryption standard (FIPS Publication 192). The AES standard was adopted by the National Institute of Standards and Technology (NIST) in 2000 and replaces the DES standard, which was adopted in 1977. Fusion devices have a builtin AES decryption engine and a flash-based AES key that make Fusion devices the most comprehensive programmable logic device security solution available today. Fusion devices with AES-based security provide a high level of protection for remote field updates over public networks, such as the Internet, and are designed to ensure that valuable IP remains out of the hands of system overbuilders, system cloners, and IP thieves. As an additional security measure, the FPGA configuration data of a programmed Fusion device cannot be read back, although secure design verification is possible. During design, the user controls and defines both internal and external access to the flash memory blocks. Security, built into the FPGA fabric, is an inherent component of the Fusion family. The flash cells are located beneath seven metal layers, and many device design and layout techniques have been used to make invasive attacks extremely difficult. Fusion with FlashLock and AES security is unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with industrystandard security, making remote ISP possible. A Fusion device provides the best available security for programmable logic designs. Single Chip Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the configuration data is an inherent part of the FPGA structure, and no external configuration data needs to be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based Fusion FPGAs do not require system configuration components such as EEPROMs or microcontrollers to load device configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system reliability. 1-2 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Live at Power-Up Flash-based Fusion devices are Level 0 live at power-up (LAPU). LAPU Fusion devices greatly simplify total system design and reduce total system cost by eliminating the need for CPLDs. The Fusion LAPU clocking (PLLs) replaces off-chip clocking resources. The Fusion mix of LAPU clocking and analog resources makes these devices an excellent choice for both system supervisor and system management functions. LAPU from a single 3.3 V source enables Fusion devices to initiate, control, and monitor multiple voltage supplies while also providing system clocks. In addition, glitches and brownouts in system power will not corrupt the Fusion device flash configuration. Unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored. This enables reduction or complete removal of expensive voltage monitor and brownout detection devices from the PCB design. Flashbased Fusion devices simplify total system design and reduce cost and design risk, while increasing system reliability. Firm Errors Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. Another source of radiation-induced firm errors is alpha particles. For an alpha to cause a soft or firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in the package molding compound or in the die itself. While low-alpha molding compounds are being used increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors. Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a complete system failure. Firm errors do not occur in Fusion flash-based FPGAs. Once it is programmed, the flash cell configuration element of Fusion FPGAs cannot be altered by high-energy neutrons and is therefore immune to errors from them. Recoverable (or soft) errors occur in the user data SRAMs of all FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric. Low Power Flash-based Fusion devices exhibit power characteristics similar to those of an ASIC, making them an ideal choice for power-sensitive applications. With Fusion devices, there is no power-on current surge and no high current transition, both of which occur on many FPGAs. Fusion devices also have low dynamic power consumption and support both low power standby mode and very low power sleep mode, offering further power savings. Advanced Flash Technology The Fusion family offers many benefits, including nonvolatility and reprogrammability through an advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design techniques are used to implement logic and control functions. The combination of fine granularity, enhanced flexible routing resources, and abundant flash switches allows very high logic utilization (much higher than competing SRAM technologies) without compromising device routability or performance. Logic functions within the device are interconnected through a four-level routing hierarchy. Advanced Architecture The proprietary Fusion architecture provides granularity comparable to standard-cell ASICs. The Fusion device consists of several distinct and programmable architectural features, including the following (Figure 1-1 on page 1-5): • Embedded memories – – – • – Flash memory blocks FlashROM SRAM and FIFO PLL and CCC Clocking resources Revision 2 1 -3 Fusion Device Family Overview – – • • • RC oscillator No-Glitch MUX (NGMUX) – Crystal oscillator Digital I/Os with advanced I/O standards FPGA VersaTiles Analog components – – – ADC Analog I/Os supporting voltage, current, and temperature monitoring Real-time counter – 1.5 V on-board voltage regulator The FPGA core consists of a sea of VersaTiles. Each VersaTile can be configured as a three-input logic lookup table (LUT) equivalent or a D-flip-flop or latch (with or without enable) by programming the appropriate flash switch interconnections. This versatility allows efficient use of the FPGA fabric. The VersaTile capability is unique to the Microsemi families of flash-based FPGAs. VersaTiles and larger functions are connected with any of the four levels of routing hierarchy. Flash switches are distributed throughout the device to provide nonvolatile, reconfigurable interconnect programming. Maximum core utilization is possible for virtually any design. In addition, extensive on-chip programming circuitry allows for rapid (3.3 V) single-voltage programming of Fusion devices via an IEEE 1532 JTAG interface. Unprecedented Integration Integrated Analog Blocks and Analog I/Os Fusion devices offer robust and flexible analog mixed signal capability in addition to the highperformance flash FPGA fabric and flash memory block. The many built-in analog peripherals include a configurable 32:1 input analog MUX, up to 10 independent MOSFET gate driver outputs, and a configurable ADC. The ADC supports 8-, 10-, and 12-bit modes of operation with a cumulative sample rate up to 600 k samples per second (Ksps), differential nonlinearity (DNL) < 1.0 LSB, and Total Unadjusted Error (TUE) of 0.72 LSB in 10-bit mode. The TUE is used for characterization of the conversion error and includes errors from all sources, such as offset and linearity. Internal bandgap circuitry offers 1% voltage reference accuracy with the flexibility of utilizing an external reference voltage. The ADC channel sampling sequence and sampling rate are programmable and implemented in the FPGA logic using Designer and Libero IDE software tool support. Two channels of the 32-channel ADCMUX are dedicated. Channel 0 is connected internally to VCC and can be used to monitor core power supply. Channel 31 is connected to an internal temperature diode which can be used to monitor device temperature. The 30 remaining channels can be connected to external analog signals. The exact number of I/Os available for external connection signals is devicedependent (refer to the "Fusion Family" table on page I for details). With Fusion, Microsemi also introduces the Analog Quad I/O structure (Figure 1-1 on page 1-5). Each quad consists of three analog inputs and one gate driver. Each quad can be configured in various built-in circuit combinations, such as three prescaler circuits, three digital input circuits, a current monitor circuit, or a temperature monitor circuit. Each prescaler has multiple scaling factors programmed by FPGA signals to support a large range of analog inputs with positive or negative polarity. When the current monitor circuit is selected, two adjacent analog inputs measure the voltage drop across a small external sense resistor. For more information, refer to the "Analog System Characteristics" section on page 2-119. Built-in operational amplifiers amplify small voltage signals for accurate current measurement. One analog input in each quad can be connected to an external temperature monitor diode. In addition to the external temperature monitor diode(s), a Fusion device can monitor an internal temperature diode using dedicated channel 31 of the ADCMUX. Figure 1-1 on page 1-5 illustrates a typical use of the Analog Quad I/O structure. The Analog Quad shown is configured to monitor and control an external power supply. The AV pad measures the source of the power supply. The AC pad measures the voltage drop across an external sense resistor to 1-4 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs calculate current. The AG MOSFET gate driver pad turns the external MOSFET on and off. The AT pad measures the load-side voltage level. Power Line Side Load Side Off-Chip AV Pads Voltage Monitor Block AC Rpullup AG Current Monitor Block Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor/Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 1-1 • Analog Quad Embedded Memories Flash Memory Blocks The flash memory available in each Fusion device is composed of one to four flash blocks, each 2 Mbits in density. Each block operates independently with a dedicated flash controller and interface. Fusion flash memory blocks combine fast access times (60 ns random access and 10 ns access in Read-Ahead mode) with a configurable 8-, 16-, or 32-bit datapath, enabling high-speed flash operation without wait states. The memory block is organized in pages and sectors. Each page has 128 bytes, with 33 pages comprising one sector and 64 sectors per block. The flash block can support multiple partitions. The only constraint on size is that partition boundaries must coincide with page boundaries. The flexibility and granularity enable many use models and allow added granularity in programming updates. Fusion devices support two methods of external access to the flash memory blocks. The first method is a serial interface that features a built-in JTAG-compliant port, which allows in-system programmability during user or monitor/test modes. This serial interface supports programming of an AES-encrypted stream. Data protected with security measures can be passed through the JTAG interface, decrypted, and then programmed in the flash block. The second method is a soft parallel interface. FPGA logic or an on-chip soft microprocessor can access flash memory through the parallel interface. Since the flash parallel interface is implemented in the FPGA fabric, it can potentially be customized to meet special user requirements. For more information, refer to the CoreCFI Handbook. The flash memory parallel interface provides configurable byte-wide (×8), word-wide (×16), or dual-word-wide Revision 2 1 -5 Fusion Device Family Overview (×32) data-port options. Through the programmable flash parallel interface, the on-chip and off-chip memories can be cascaded for wider or deeper configurations. The flash memory has built-in security. The user can configure either the entire flash block or the small blocks to protect against unintentional or intrusive attempts to change or destroy the storage contents. Each on-chip flash memory block has a dedicated controller, enabling each block to operate independently. The flash block logic consists of the following sub-blocks: • • • • Flash block – Contains all stored data. The flash block contains 64 sectors and each sector contains 33 pages of data. Page Buffer – Contains the contents of the current page being modified. A page contains 8 blocks of data. Block Buffer – Contains the contents of the last block accessed. A block contains 128 data bits. ECC Logic – The flash memory stores error correction information with each block to perform single-bit error correction and double-bit error detection on all data blocks. User Nonvolatile FlashROM In addition to the flash blocks, Fusion devices have 1 Kbit of user-accessible, nonvolatile FlashROM onchip. The FlashROM is organized as 8×128-bit pages. The FlashROM can be used in diverse system applications: • • • • • • • • Internet protocol addressing (wireless or fixed) System calibration settings Device serialization and/or inventory control Subscription-based business models (for example, set-top boxes) Secure key storage for communications algorithms protected by security Asset management/tracking Date stamping Version management The FlashROM is written using the standard IEEE 1532 JTAG programming interface. Pages can be individually programmed (erased and written). On-chip AES decryption can be used selectively over public networks to load data such as security keys stored in the FlashROM for a user design. The FlashROM can be programmed (erased and written) via the JTAG programming interface, and its contents can be read back either through the JTAG programming interface or via direct FPGA core addressing. The FlashPoint tool in the Fusion development software solutions, Libero IDE and Designer, has extensive support for flash memory blocks and FlashROM. One such feature is auto-generation of sequential programming files for applications requiring a unique serial number in each part. Another feature allows the inclusion of static data for system version control. Data for the FlashROM can be generated quickly and easily using the Libero IDE and Designer software tools. Comprehensive programming file support is also included to allow for easy programming of large numbers of parts with differing FlashROM contents. SRAM and FIFO Fusion devices have embedded SRAM blocks along the north and south sides of the device. Each variable-aspect-ratio SRAM block is 4,608 bits in size. Available memory configurations are 256×18, 512×9, 1k×4, 2k×2, and 4k×1 bits. The individual blocks have independent read and write ports that can be configured with different bit widths on each port. For example, data can be written through a 4-bit port and read as a single bitstream. The SRAM blocks can be initialized from the flash memory blocks or via the device JTAG port (ROM emulation mode), using the UJTAG macro. In addition, every SRAM block has an embedded FIFO control unit. The control unit allows the SRAM block to be configured as a synchronous FIFO without using additional core VersaTiles. The FIFO width and depth are programmable. The FIFO also features programmable Almost Empty (AEMPTY) and Almost Full (AFULL) flags in addition to the normal EMPTY and FULL flags. The embedded FIFO control unit contains the counters necessary for the generation of the read and write address pointers. The SRAM/FIFO blocks can be cascaded to create larger configurations. 1-6 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Clock Resources PLLs and Clock Conditioning Circuits (CCCs) Fusion devices provide designers with very flexible clock conditioning capabilities. Each member of the Fusion family contains six CCCs. In the two larger family members, two of these CCCs also include a PLL; the smaller devices support one PLL. The inputs of the CCC blocks are accessible from the FPGA core or from one of several inputs with dedicated CCC block connections. The CCC block has the following key features: • • • • • • Wide input frequency range (fIN_CCC) = 1.5 MHz to 350 MHz Output frequency range (fOUT_CCC) = 0.75 MHz to 350 MHz Clock phase adjustment via programmable and fixed delays from –6.275 ns to +8.75 ns Clock skew minimization (PLL) Clock frequency synthesis (PLL) On-chip analog clocking resources usable as inputs: – – • • • 100 MHz on-chip RC oscillator Crystal oscillator Additional CCC specifications: Internal phase shift = 0°, 90°, 180°, and 270° Output duty cycle = 50% ± 1.5% Low output jitter. Samples of peak-to-peak period jitter when a single global network is used: – – – – • • 70 ps at 350 MHz 90 ps at 100 MHz 180 ps at 24 MHz Worst case < 2.5% × clock period Maximum acquisition time = 150 µs Low power consumption of 5 mW Global Clocking Fusion devices have extensive support for multiple clocking domains. In addition to the CCC and PLL support described above, there are on-chip oscillators as well as a comprehensive global clock distribution network. The integrated RC oscillator generates a 100 MHz clock. It is used internally to provide a known clock source to the flash memory read and write control. It can also be used as a source for the PLLs. The crystal oscillator supports the following operating modes: • • • Crystal (32.768 KHz to 20 MHz) Ceramic (500 KHz to 8 MHz) RC (32.768 KHz to 4 MHz) Each VersaTile input and output port has access to nine VersaNets: six main and three quadrant global networks. The VersaNets can be driven by the CCC or directly accessed from the core via MUXes. The VersaNets can be used to distribute low-skew clock signals or for rapid distribution of high-fanout nets. Digital I/Os with Advanced I/O Standards The Fusion family of FPGAs features a flexible digital I/O structure, supporting a range of voltages (1.5 V, 1.8 V, 2.5 V, and 3.3 V). Fusion FPGAs support many different digital I/O standards, both single-ended and differential. The I/Os are organized into banks, with four or five banks per device. The configuration of these banks determines the I/O standards supported. The banks along the east and west sides of the device support the full range of I/O standards (single-ended and differential). The south bank supports the Analog Quads (analog I/O). In the family's two smaller devices, the north bank supports multiple single-ended digital I/O Revision 2 1 -7 Fusion Device Family Overview standards. In the family’s larger devices, the north bank is divided into two banks of digital Pro I/Os, supporting a wide variety of single-ended, differential, and voltage-referenced I/O standards. Each I/O module contains several input, output, and enable registers. These registers allow the implementation of the following applications: • • • Single-Data-Rate (SDR) applications Double-Data-Rate (DDR) applications—DDR LVDS I/O for chip-to-chip communications Fusion banks support LVPECL, LVDS, BLVDS, and M-LVDS with 20 multi-drop points. VersaTiles The Fusion core consists of VersaTiles, which are also used in the successful ProASIC3 family. The Fusion VersaTile supports the following: • • • All 3-input logic functions—LUT-3 equivalent Latch with clear or set D-flip-flop with clear or set and optional enable Refer to Figure 1-2 for the VersaTile configuration arrangement. LUT-3 Equivalent X1 X2 X3 D-Flip-Flop with Clear or Set Data CLK CLR Y Enable D-Flip-Flop with Clear or Set Data CLK Enable CLR Y LUT-3 Y D-FF D-FFE Figure 1-2 • VersaTile Configurations Specifying I/O States During Programming You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information. Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have limited display of Pin Numbers only. 1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during programming. 2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator window appears. 3. Click the Specify I/O States During Programming button to display the Specify I/O States During Programming dialog box. 4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header. Select the I/Os you wish to modify (Figure 1-3 on page 1-9). 5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state settings: 1 – I/O is set to drive out logic High 0 – I/O is set to drive out logic Low Last Known State – I/O is set to the last value that was driven out prior to entering the programming mode, and then held at that value during programming Z -Tri-State: I/O is tristated 1-8 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Figure 1-3 • I/O States During Programming Window 6. Click OK to return to the FlashPoint – Programming File Generator window. I/O States During programming are saved to the ADB and resulting programming files after completing programming file generation. Revision 2 1 -9 Related Documents Datasheet Core8051 www.microsemi.com/soc/ipdocs/Core8051_DS.pdf Application Notes Fusion FlashROM http://www.microsemi.com/soc/documents/Fusion_FROM_AN.pdf Fusion SRAM/FIFO Blocks http://www.microsemi.com/soc/documents/Fusion_RAM_FIFO_AN.pdf Using DDR in Fusion Devices http://www.microsemi.com/soc/documents/Fusion_DDR_AN.pdf Fusion Security http://www.microsemi.com/soc/documents/Fusion_Security_AN.pdf Using Fusion RAM as Multipliers http://www.microsemi.com/soc/documents/Fusion_Multipliers_AN.pdf Handbook Cortex-M1 Handbook www.microsemi.com/soc/documents/CortexM1_HB.pdf User’s Guides Designer User's Guide http://www.microsemi.com/soc/documents/designer_UG.pdf Fusion FPGA Fabric User’s Guide http://www.microsemi.com/soc/documents/Fusion_UG.pdf IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide http://www.microsemi.com/soc/documents/pa3_libguide_ug.pdf SmartGen, FlashROM, Flash Memory System Builder, and Analog System Builder User's Guide http://www.microsemi.com/soc/documents/genguide_ug.pdf White Papers Fusion Technology http://www.microsemi.com/soc/documents/Fusion_Tech_WP.pdf 2 – Device Architecture Fusion Stack Architecture To manage the unprecedented level of integration in Fusion devices, Microsemi developed the Fusion technology stack (Figure 2-1). This layered model offers a flexible design environment, enabling design at very high and very low levels of abstraction. Fusion peripherals include hard analog IP and hard and soft digital IP. Peripherals communicate across the FPGA fabric via a layer of soft gates—the Fusion backbone. Much more than a common bus interface, this Fusion backbone integrates a micro-sequencer within the FPGA fabric and configures the individual peripherals and supports low-level processing of peripheral data. Fusion applets are application building blocks that can control and respond to peripherals and other system signals. Applets can be rapidly combined to create large applications. The technology is scalable across devices, families, design types, and user expertise, and supports a welldefined interface for external IP and tool integration. At the lowest level, Level 0, are Fusion peripherals. These are configurable functional blocks that can be hardwired structures such as a PLL or analog input channel, or soft (FPGA gate) blocks such as a UART or two-wire serial interface. The Fusion peripherals are configurable and support a standard interface to facilitate communication and implementation. Connecting and controlling access to the peripherals is the Fusion backbone, Level 1. The backbone is a soft-gate structure, scalable to any number of peripherals. The backbone is a bus and much more; it manages peripheral configuration to ensure proper operation. Leveraging the common peripheral interface and a low-level state machine, the backbone efficiently offloads peripheral management from the system design. The backbone can set and clear flags based upon peripheral behavior and can define performance criteria. The flexibility of the stack enables a designer to configure the silicon, directly bypassing the backbone if that level of control is desired. One step up from the backbone is the Fusion applet, Level 2. The applet is an application building block that implements a specific function in FPGA gates. It can react to stimuli and board-level events coming through the backbone or from other sources, and responds to these stimuli by accessing and manipulating peripherals via the backbone or initiating some other action. An applet controls or responds to the peripheral(s). Applets can be easily imported or exported from the design environment. The applet structure is open and well-defined, enabling users to import applets from Microsemi, system developers, third parties, and user groups. Optional ARM or 8051 Processor User Applications Fusion Applets Flash Memory Fusion Smart Backbone Analog Analog Smart Smart Peripheral 1 Peripheral 2 Smart Peripherals Analog in FPGA Smart Fabric Peripheral n (e.g., Logic, PLL, FIFO) Level 3 Level 2 Level 1 Level 0 Note: Levels 1, 2, and 3 are implemented in FPGA logic gates. Figure 2-1 • Fusion Architecture Stack Revision 2 2 -1 Device Architecture The system application, Level 3, is the larger user application that utilizes one or more applets. Designing at the highest level of abstraction supported by the Fusion technology stack, the application can be easily created in FPGA gates by importing and configuring multiple applets. In fact, in some cases an entire FPGA system design can be created without any HDL coding. An optional MCU enables a combination of software and HDL-based design methodologies. The MCU can be on-chip or off-chip as system requirements dictate. System portioning is very flexible, allowing the MCU to reside above the applets or to absorb applets, or applets and backbone, if desired. The Fusion technology stack enables a very flexible design environment. Users can engage in design across a continuum of abstraction from very low to very high. Core Architecture VersaTile Based upon successful ProASIC3/E logic architecture, Fusion devices provide granularity comparable to gate arrays. The Fusion device core consists of a sea-of-VersaTiles architecture. As illustrated in Figure 2-2, there are four inputs in a logic VersaTile cell, and each VersaTile can be configured using the appropriate flash switch connections: • • • • Any 3-input logic function Latch with clear or set D-flip-flop with clear or set Enable D-flip-flop with clear or set (on a 4th input) VersaTiles can flexibly map the logic and sequential gates of a design. The inputs of the VersaTile can be inverted (allowing bubble pushing), and the output of the tile can connect to high-speed, very-long-line routing resources. VersaTiles and larger functions are connected with any of the four levels of routing hierarchy. When the VersaTile is used as an enable D-flip-flop, the SET/CLR signal is supported by a fourth input, which can only be routed to the core cell over the VersaNet (global) network. The output of the VersaTile is F2 when the connection is to the ultra-fast local lines, or YL when the connection is to the efficient long-line or very-long-line resources (Figure 2-2). Data X3 0 1 0 1 0 1 Y Pin 1 F2 YL CLK X2 CLR/ Enable X1 CLR XC* Legend: 0 1 Via (hard connection) Switch (flash connection) Ground Note: *This input can only be connected to the global clock distribution network. Figure 2-2 • Fusion Core VersaTile 2-2 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs VersaTile Characteristics Sample VersaTile Specifications—Combinatorial Module The Fusion library offers all combinations of LUT-3 combinatorial functions. In this section, timing characteristics are presented for a sample of the library (Figure 2-3). For more details, refer to the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide. A INV Y A B A A OR2 Y B NOR2 Y AND2 B Y A NAND2 B A B C Y A B XOR2 Y XOR3 Y A A B C B C MAJ3 Y A 0 MUX2 Y NAND3 B 1 S Figure 2-3 • Sample of Combinatorial Cells Revision 2 2 -3 Device Architecture tPD A NAND2 or Any Combinatorial Logic Y B tPD = MAX(tPD(RR), tPD(RF), tPD(FF), tPD(FR)) where edges are applicable for the particular combinatorial cell VCCA 50% A, B, C 50% GND VCCA 50% 50% OUT GND VCCA OUT 50% tPD (RF) Figure 2-4 • tPD (RR) tPD (FF) tPD (FR) GND 50% Combinatorial Timing Model and Waveforms 2-4 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Timing Characteristics Table 2-1 • Combinatorial Cell Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Combinatorial Cell INV AND2 NAND2 OR2 NOR2 XOR2 MAJ3 XOR3 MUX2 AND3 Equation Y = !A Y=A·B Y = !(A · B) Y=A+B Y = !(A + B) Y=A⊕B Y = MAJ(A, B, C) Y=A⊕B⊕C Y = A !S + B S Y=A·B·C Parameter tPD tPD tPD tPD tPD tPD tPD tPD tPD tPD –2 0.40 0.47 0.47 0.49 0.49 0.74 0.70 0.87 0.51 0.56 –1 0.46 0.54 0.54 0.55 0.55 0.84 0.79 1.00 0.58 0.64 Std. 0.54 0.63 0.63 0.65 0.65 0.99 0.93 1.17 0.68 0.75 Units ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Sample VersaTile Specifications—Sequential Module The Fusion library offers a wide variety of sequential cells, including flip-flops and latches. Each has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented for a representative sample from the library (Figure 2-5). For more details, refer to the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide. Revision 2 2 -5 Device Architecture Data D DFN1 Q Out Data En CLK D Out Q DFN1E1 CLK PRE Data D Q DFN1C1 Out Data En CLK D Q Out DFI1E1P1 CLK CLR Figure 2-5 • Sample of Sequential Cells tCKMPWH tCKMPWL 50% 50% tHD tSUD Data 50% 0 50% 50% 50% 50% 50% 50% CLK EN 50% tHE 50% tWPRE tRECPRE 50% tRECCLR 50% tREMPRE 50% PRE tSUE tWCLR CLR tPRE2Q Out tCLKQ 50% 50% 50% tREMCLR 50% tCLR2Q 50% Figure 2-6 • Sequential Timing Model and Waveforms 2-6 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Sequential Timing Characteristics Table 2-2 • Register Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tCLKQ tSUD tHD tSUE tHE tCLR2Q tPRE2Q tREMCLR tRECCLR tREMPRE tRECPRE tWCLR tWPRE tCKMPWH tCKMPWL Description Clock-to-Q of the Core Register Data Setup Time for the Core Register Data Hold Time for the Core Register Enable Setup Time for the Core Register Enable Hold Time for the Core Register Asynchronous Clear-to-Q of the Core Register Asynchronous Preset-to-Q of the Core Register Asynchronous Clear Removal Time for the Core Register Asynchronous Clear Recovery Time for the Core Register Asynchronous Preset Removal Time for the Core Register Asynchronous Preset Recovery Time for the Core Register Asynchronous Clear Minimum Pulse Width for the Core Register Asynchronous Preset Minimum Pulse Width for the Core Register Clock Minimum Pulse Width High for the Core Register Clock Minimum Pulse Width Low for the Core Register –2 0.55 0.43 0.00 0.45 0.00 0.40 0.40 0.00 0.22 0.00 0.22 0.22 0.22 0.32 0.36 –1 0.63 0.49 0.00 0.52 0.00 0.45 0.45 0.00 0.25 0.00 0.25 0.25 0.25 0.37 0.41 Std. 0.74 0.57 0.00 0.61 0.00 0.53 0.53 0.00 0.30 0.00 0.30 0.30 0.30 0.43 0.48 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2 -7 Device Architecture Array Coordinates During many place-and-route operations in the Microsemi Designer software tool, it is possible to set constraints that require array coordinates. Table 2-3 is provided as a reference. The array coordinates are measured from the lower left (0, 0). They can be used in region constraints for specific logic groups/blocks, designated by a wildcard, and can contain core cells, memories, and I/Os. Table 2-3 provides array coordinates of core cells and memory blocks. I/O and cell coordinates are used for placement constraints. Two coordinate systems are needed because there is not a one-to-one correspondence between I/O cells and edge core cells. In addition, the I/O coordinate system changes depending on the die/package combination. It is not listed in Table 2-3. The Designer ChipPlanner tool provides array coordinates of all I/O locations. I/O and cell coordinates are used for placement constraints. However, I/O placement is easier by package pin assignment. Figure 2-7 illustrates the array coordinates of an AFS600 device. For more information on how to use array coordinates for region/placement constraints, see the Designer User's Guide or online help (available in the software) for Fusion software tools. Table 2-3 • Array Coordinates Device Min. x AFS090 AFS250 AFS600 AFS1500 3 3 3 3 y 2 2 4 4 x 98 130 194 322 VersaTiles Max. y 25 49 75 123 Memory Rows Bottom (x, y) None None (3, 2) (3, 2) Top (x, y) (3, 26) (3, 50) (3, 76) (3, 124) Min. (x, y) (0, 0) (0, 0) (0, 0) (0, 0) All Max. (x, y) (101, 29) (133, 53) (197, 79) (325, 129) I/O Tile (0, 79) Top Row (7, 79) to (189, 79) Bottom Row (5, 78) to (192, 78) (197, 79) Memory (3, 77) Blocks (3, 76) VersaTile (Core) (3, 75) (194, 77) Memory (194, 76) Blocks (194, 75) VersaTile (Core) (194, 4) VersaTile(Core) (194, 3) Memory (194, 2) Blocks VersaTile (Core) (3, 4) Memory (3, 3) Blocks (3, 2) (197, 1) (0, 0) I/O Tile to Analog Block Top Row (5, 1) to (168, 1) Bottom Row (7, 0) to (165, 0) UJTAG FlashROM Top Row (169, 1) to (192, 1) (197, 0) Note: The vertical I/O tile coordinates are not shown. West side coordinates are {(0, 2) to (2, 2)} to {(0, 77) to (2, 77)}; east side coordinates are {(195, 2) to (197, 2)} to {(195, 77) to (197, 77)}. Figure 2-7 • Array Coordinates for AFS600 2-8 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Routing Architecture The routing structure of Fusion devices is designed to provide high performance through a flexible fourlevel hierarchy of routing resources: ultra-fast local resources; efficient long-line resources; high-speed very-long-line resources; and the high-performance VersaNet networks. The ultra-fast local resources are dedicated lines that allow the output of each VersaTile to connect directly to every input of the eight surrounding VersaTiles (Figure 2-8). The exception to this is that the SET/CLR input of a VersaTile configured as a D-flip-flop is driven only by the VersaNet global network. The efficient long-line resources provide routing for longer distances and higher-fanout connections. These resources vary in length (spanning one, two, or four VersaTiles), run both vertically and horizontally, and cover the entire Fusion device (Figure 2-9 on page 2-10). Each VersaTile can drive signals onto the efficient long-line resources, which can access every input of every VersaTile. Active buffers are inserted automatically by routing software to limit loading effects. The high-speed very-long-line resources, which span the entire device with minimal delay, are used to route very long or high-fanout nets: length ±12 VersaTiles in the vertical direction and length ±16 in the horizontal direction from a given core VersaTile (Figure 2-10 on page 2-11). Very long lines in Fusion devices, like those in ProASIC3 devices, have been enhanced. This provides a significant performance boost for long-reach signals. The high-performance VersaNet global networks are low-skew, high-fanout nets that are accessible from external pins or from internal logic (Figure 2-11 on page 2-12). These nets are typically used to distribute clocks, reset signals, and other high-fanout nets requiring minimum skew. The VersaNet networks are implemented as clock trees, and signals can be introduced at any junction. These can be employed hierarchically, with signals accessing every input on all VersaTiles. Long Lines L L L L Inputs L Output L Ultra-Fast Local Lines (connects a VersaTile to the adjacent VersaTile, I/O buffer, or memory block) L L L Note: Input to the core cell for the D-flip-flop set and reset is only available via the VersaNet global network connection. Figure 2-8 • Ultra-Fast Local Lines Connected to the Eight Nearest Neighbors Revision 2 2 -9 Device Architecture Spans Four VersaTiles Spans Two VersaTiles Spans One VersaTile VersaTile L L L L L L L L L L L L L L L L L L Spans One VersaTile Spans Two VersaTiles Spans Four VersaTiles L L L L L L L L L L L L Figure 2-9 • Efficient Long-Line Resources 2- 10 R e visio n 2 Fusion Family of Mixed Signal FPGAs High-Speed, Very-Long-Line Resources Pad Ring SRAM I/O Ring 16×12 Block of VersaTiles I/O Ring Figure 2-10 • Very-Long-Line Resources Pad Ring Revision 2 2- 11 Device Architecture Global Resources (VersaNets) Fusion devices offer powerful and flexible control of circuit timing through the use of analog circuitry. Each chip has six CCCs. The west CCC also contains a PLL core. In the two larger devices (AFS600 and AFS1500), the west and the east CCCs each contain a PLL. The PLLs include delay lines, a phase shifter (0°, 90°, 180°, 270°), and clock multipliers/dividers. Each CCC has all the circuitry needed for the selection and interconnection of inputs to the VersaNet global network. The east and west CCCs each have access to three VersaNet global lines on each side of the chip (six lines total). The CCCs at the four corners each have access to three quadrant global lines on each quadrant of the chip. Advantages of the VersaNet Approach One of the architectural benefits of Fusion is the set of powerful and low-delay VersaNet global networks. Fusion offers six chip (main) global networks that are distributed from the center of the FPGA array (Figure 2-11). In addition, Fusion devices have three regional globals (quadrant globals) in each of the four chip quadrants. Each core VersaTile has access to nine global network resources: three quadrant and six chip (main) global networks. There are a total of 18 global networks on the device. Each of these networks contains spines and ribs that reach all VersaTiles in all quadrants (Figure 2-12 on page 2-13). This flexible VersaNet global network architecture allows users to map up to 180 different internal/external clocks in a Fusion device. Details on the VersaNet networks are given in Table 2-4 on page 2-13. The flexibility of the Fusion VersaNet global network allows the designer to address several design requirements. User applications that are clock-resource-intensive can easily route external or gated internal clocks using VersaNet global routing networks. Designers can also drastically reduce delay penalties and minimize resource usage by mapping critical, high-fanout nets to the VersaNet global network. Quadrant Global Pads Pad Ring Pad Ring High-Performance VersaNet Global Network I/O Ring Top Spine Main (chip) Global Network Global Pads Global Spine Global Ribs Bottom Spine I/O Ring Chip (main) Global Pads Spine-Selection Tree MUX Figure 2-11 • Overview of Fusion VersaNet Global Network 2- 12 R e visio n 2 Fusion Family of Mixed Signal FPGAs Northwest Quadrant Global Network CCC Quadrant Global Spine 3 3 3 3 CCC 3 6 Chip (main) Global Network 6 6 6 3 CCC CCC Global Spine 6 6 6 6 3 CCC 3 3 3 CCC Southeast Quadrant Global Network Figure 2-12 • Global Network Architecture Table 2-4 • Globals/Spines/Rows by Device AFS090 Global VersaNets (trees)* VersaNet Spines/Tree Total Spines VersaTiles in Each Top or Bottom Spine Total VersaTiles 9 4 36 384 2,304 AFS250 9 8 72 768 6,144 AFS600 9 12 108 1,152 13,824 AFS1500 9 20 180 1,920 38,400 Note: *There are six chip (main) globals and three globals per quadrant. Revision 2 2- 13 Device Architecture VersaNet Global Networks and Spine Access The Fusion architecture contains a total of 18 segmented global networks that can access the VersaTiles, SRAM, and I/O tiles on the Fusion device. There are 6 chip (main) global networks that access the entire device and 12 quadrant networks (3 in each quadrant). Each device has a total of 18 globals. These VersaNet global networks offer fast, low-skew routing resources for high-fanout nets, including clock signals. In addition, these highly segmented global networks offer users the flexibility to create low-skew local networks using spines for up to 180 internal/external clocks (in an AFS1500 device) or other high-fanout nets in Fusion devices. Optimal usage of these low-skew networks can result in significant improvement in design performance on Fusion devices. The nine spines available in a vertical column reside in global networks with two separate regions of scope: the quadrant global network, which has three spines, and the chip (main) global network, which has six spines. Note that there are three quadrant spines in each quadrant of the device. There are four quadrant global network regions per device (Figure 2-12 on page 2-13). The spines are the vertical branches of the global network tree, shown in Figure 2-11 on page 2-12. Each spine in a vertical column of a chip (main) global network is further divided into two equal-length spine segments: one in the top and one in the bottom half of the die. Each spine and its associated ribs cover a certain area of the Fusion device (the "scope" of the spine; see Figure 2-11 on page 2-12). Each spine is accessed by the dedicated global network MUX tree architecture, which defines how a particular spine is driven—either by the signal on the global network from a CCC, for example, or another net defined by the user (Figure 2-13). Quadrant spines can be driven from user I/Os on the north and south sides of the die, via analog I/Os configured as direct digital inputs. The ability to drive spines in the quadrant global networks can have a significant effect on system performance for high-fanout inputs to a design. Details of the chip (main) global network spine-selection MUX are presented in Figure 2-13. The spine drivers for each spine are located in the middle of the die. Quadrant spines are driven from a north or south rib. Access to the top and bottom ribs is from the corner CCC or from the I/Os on the north and south sides of the device. For details on using spines in Fusion devices, see the application note Using Global Resources in Actel Fusion Devices. Internal/External Signals Internal/External Signals Tree Node MUX Internal/External Signal Tree Node MUX Tree Node MUX Global Rib Internal/External Signal Global Driver MUX Spine Figure 2-13 • Spine-Selection MUX of Global Tree 2- 14 R e visio n 2 Fusion Family of Mixed Signal FPGAs Clock Aggregation Clock aggregation allows for multi-spine clock domains. A MUX tree provides the necessary flexibility to allow long lines or I/Os to access domains of one, two, or four global spines. Signal access to the clock aggregation system is achieved through long-line resources in the central rib, and also through local resources in the north and south ribs, allowing I/Os to feed directly into the clock system. As Figure 2-14 indicates, this access system is contiguous. There is no break in the middle of the chip for north and south I/O VersaNet access. This is different from the quadrant clocks, located in these ribs, which only reach the middle of the rib. Refer to the Using Global Resources in Actel Fusion Devices application note. Global Spine Global Rib Global Driver and MUX Tree Node MUX I/O Access Internal Signal Access Global Signal Access I/O Tiles Figure 2-14 • Clock Aggregation Tree Architecture Revision 2 2- 15 Device Architecture Global Resource Characteristics AFS600 VersaNet Topology Clock delays are device-specific. Figure 2-15 is an example of a global tree used for clock routing. The global tree presented in Figure 2-15 is driven by a CCC located on the west side of the AFS600 device. It is used to drive all D-flip-flops in the device. Central Global Rib CCC VersaTile Rows Global Spine Figure 2-15 • Example of Global Tree Use in an AFS600 Device for Clock Routing 2- 16 R e visio n 2 Fusion Family of Mixed Signal FPGAs VersaNet Timing Characteristics Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not include I/O input buffer clock delays, as these are dependent upon I/O standard, and the clock may be driven and conditioned internally by the CCC module. Table 2-5, Table 2-6, Table 2-7, and Table 2-8 on page 2-18 present minimum and maximum global clock delays within the device Minimum and maximum delays are measured with minimum and maximum loading, respectively. Timing Characteristics Table 2-5 • AFS1500 Global Resource Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V –2 Parameter tRCKL tRCKH tRCKMPWH tRCKMPWL tRCKSW FRMAX Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. –1 2 Std. 2 Description Input Low Delay for Global Clock Input High Delay for Global Clock Minimum Pulse Width High for Global Clock Minimum Pulse Width Low for Global Clock Maximum Skew for Global Clock Maximum Frequency for Global Clock Min.1 1.53 1.53 Max. Min. 1 Max. Min. 1 Max.2 2.34 2.40 Units ns ns ns ns 1.75 1.79 1.74 1.75 1.99 2.04 2.05 2.05 0.26 0.29 0.34 ns MHz Table 2-6 • AFS600 Global Resource Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V –2 Parameter tRCKL tRCKH tRCKMPWH tRCKMPWL tRCKSW FRMAX Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. –1 Max.2 1.49 1.54 Min.1 1.44 1.44 Max.2 1.70 1.75 Std. Min.1 1.69 1.69 Max.2 2.00 2.06 Units ns ns ns ns Description Input Low Delay for Global Clock Input High Delay for Global Clock Minimum Pulse Width High for Global Clock Minimum Pulse Width Low for Global Clock Maximum Skew for Global Clock Maximum Frequency for Global Clock Min.1 1.27 1.26 0.27 0.31 0.36 ns MHz Revision 2 2- 17 Device Architecture Table 2-7 • AFS250 Global Resource Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V –2 Parameter tRCKL tRCKH tRCKMPWH tRCKMPWL tRCKSW FRMAX Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. –1 2 Std. 2 Description Input Low Delay for Global Clock Input High Delay for Global Clock Minimum Pulse Width High for Global Clock Minimum Pulse Width Low for Global Clock Maximum Skew for Global Clock Maximum Frequency for Global Clock Min. 1 Max. Min. 1 Max. Min. 1 Max.2 Units 1.50 1.53 ns ns ns ns 0.89 0.88 1.12 1.14 1.02 1.00 1.27 1.30 1.20 1.17 0.26 0.30 0.35 ns MHz Table 2-8 • AFS090 Global Resource Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V –2 Parameter tRCKL tRCKH tRCKMPWH tRCKMPWL tRCKSW FRMAX Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. –1 Max.2 1.07 1.10 Min.1 0.96 0.95 Std. Max.2 Min.1 1.21 1.25 1.13 1.12 Max.2 1.43 1.47 Units ns ns ns ns Description Input Low Delay for Global Clock Input High Delay for Global Clock Minimum Pulse Width High for Global Clock Minimum Pulse Width Low for Global Clock Maximum Skew for Global Clock Maximum Frequency for Global Clock Min.1 0.84 0.83 0.27 0.30 0.36 ns MHz 2- 18 R e visio n 2 Fusion Family of Mixed Signal FPGAs Clocking Resources The Fusion family has a robust collection of clocking peripherals, as shown in the block diagram in Figure 2-16. These on-chip resources enable the creation, manipulation, and distribution of many clock signals. The Fusion integrated RC oscillator produces a 100 MHz clock source with no external components. For systems requiring more precise clock signals, the Fusion family supports an on-chip crystal oscillator circuit. The integrated PLLs in each Fusion device can use the RC oscillator, crystal oscillator, or another on-chip clock signal as a source. These PLLs offer a variety of capabilities to modify the clock source (multiply, divide, synchronize, advance, or delay). Utilizing the CCC found in the popular ProASIC3 family, Fusion incorporates six CCC blocks. The CCCs allow access to Fusion global and local clock distribution nets, as described in the "Global Resources (VersaNets)" section on page 2-12. Off-Chip On-Chip GNDOSC VCCOSC 100 MHz RC Oscillator Clock Out to FPGA Core through CCC XTAL1 XTAL2 External External Crystal or RC Crystal Oscillator Xtal Clock Clock I/Os From FPGA Core Figure 2-16 • Fusion Clocking Options GLINT To Core CLKOUT PLL/ CCC GLA GLC NGMUX Revision 2 2- 19 Device Architecture RC Oscillator The RC oscillator is an on-chip free-running clock source generating a 100 MHz clock. It can be used as a source clock for both on-chip and off-chip resources. When used in conjunction with the Fusion PLL and CCC circuits, the RC oscillator clock source can be used to generate clocks of varying frequency and phase. The Fusion RC oscillator is very accurate at ±1% over commercial and industrial temperature ranges. It is an automated clock, requiring no setup or configuration by the user. It requires only that the power and GNDOSC pins be connected; no external components are required. The RC oscillator can be used to drive either a PLL or another internal signal. RC Oscillator Characteristics Table 2-9 • Electrical Characteristics of RC Oscillator Parameter FRC Description Operating Frequency Accuracy Temperature: 0°C to 85°C Voltage: 3.3 V ± 5% Temperature: –40°C to 125°C Voltage: 3.3 V ± 5% Output Jitter Period Jitter (at 5 k cycles) Cycle–Cycle Jitter (at 5 k cycles) Period Jitter (at 5 k cycles) with 1 KHz / 300 mV peak-to-peak noise on power supply Cycle–Cycle Jitter (at 5 k cycles) with 1 KHz / 300 mV peak-to-peak noise on power supply Output Duty Cycle IDYNRC Operating Current 100 100 150 ps ps ps 3 % Conditions Min. Typ. 100 1 Max. Units MHz % 150 ps 50 1 % mA 2- 20 R e visio n 2 Fusion Family of Mixed Signal FPGAs Crystal Oscillator The Crystal Oscillator (XTLOSC) is source that generates the clock from an external crystal. The output of XTLOSC CLKOUT signal can be selected as an input to the PLL. Refer to the "Clock Conditioning Circuits" section for more details. The XTLOSC can operate in normal operations and Standby mode (RTC is running and 1.5 V is not present). In normal operation, the internal FPGA_EN signal is '1' as long as 1.5 V is present for VCC. As such, the internal enable signal, XTL_EN, for Crystal Oscillator is enabled since FPGA_EN is asserted. The XTL_MODE has the option of using MODE or RTC_MODE, depending on SELMODE. During Standby, 1.5 V is not available, as such, and FPGA_EN is '0'. SELMODE must be asserted in order for XTL_EN to be enabled; hence XTL_MODE relies on RTC_MODE. SELMODE and RTC_MODE must be connected to RTCXTLSEL and RTCXTLMODE from the AB respectively for correct operation during Standby (refer to the "Real-Time Counter System" section on page 2-33 for a detailed description). The Crystal Oscillator can be configured in one of four modes: • • • • RC network, 32 KHz to 4 MHz Low gain, 32 to 200 KHz Medium gain, 0.20 to 2.0 MHz High gain, 2.0 to 20.0 MHz In RC network mode, the XTAL1 pin is connected to an RC circuit, as shown in Figure 2-16 on page 2-19. The XTAL2 pin should be left floating. The RC value can be chosen based on Figure 2-18 for any desired frequency between 32 KHz and 4 MHz. The RC network mode can also accommodate an external clock source on XTAL1 instead of an RC circuit. In Low gain, Medium gain, and High gain, an external crystal component or ceramic resonator can be added onto XTAL1 and XTAL2, as shown in Figure 2-16 on page 2-19. In the case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the XTAL2 pin should be left floating. XT LOSC FPGA_EN* SELMODE MODE[1:0] RTC_MODE[1:0] XT L 0 XTL_MODE* 1 XTL_EN* C LKOU T Note: *Internal signal—does not exist in macro. Figure 2-17 • XTLOSC Macro Revision 2 2- 21 Device Architecture 1.00E-0.3 RC Time Constant Values vs. Frequency RC Time Constant (sec) 1.00E-0.4 1.00E-0.5 1.00E-0.6 1.00E-0.7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Frequency (MHz) Figure 2-18 • Crystal Oscillator: RC Time Constant Values vs. Frequency (typical) Table 2-10 • XTLOSC Signals Descriptions Signal Name XTL_EN* XTL_MODE* Width 1 2 Direction Function Enables the crystal. Active high. Settings for the crystal clock for different frequency. Value b'00 b'01 b'10 b'11 SELMODE 1 IN Modes RC network Low gain Medium gain High gain Frequency Range 32 KHz to 4 MHz 32 to 200 KHz 0.20 to 2.0 MHz 2.0 to 20.0 MHz Selects the source of XTL_MODE and also enables the XTL_EN. Connect from RTCXTLSEL from AB. 0 For normal operation or sleep mode, XTL_EN depends on FPGA_EN, XTL_MODE depends on MODE For Standby mode, XTL_EN is XTL_MODE depends on RTC_MODE enabled, 1 RTC_MODE[1:0] MODE[1:0] 2 2 IN IN Settings for the crystal clock for different frequency ranges. XTL_MODE uses RTC_MODE when SELMODE is '1'. Settings for the crystal clock for different frequency ranges. XTL_MODE uses MODE when SELMODE is '0'. In Standby, MODE inputs will be 0's. 0 when 1.5 V is not present for VCC 1 when 1.5 V is present for VCC Crystal Clock source Crystal Clock output FPGA_EN* XTL CLKOUT 1 1 1 IN IN OUT Note: *Internal signal—does not exist in macro. 2- 22 R e visio n 2 Fusion Family of Mixed Signal FPGAs Clock Conditioning Circuits In Fusion devices, the CCCs are used to implement frequency division, frequency multiplication, phase shifting, and delay operations. The CCCs are available in six chip locations—each of the four chip corners and the middle of the east and west chip sides. Each CCC can implement up to three independent global buffers (with or without programmable delay), or a PLL function (programmable frequency division/multiplication, phase shift, and delays) with up to three global outputs. Unused global outputs of a PLL can be used to implement independent global buffers, up to a maximum of three global outputs for a given CCC. A global buffer can be placed in any of the three global locations (CLKA-GLA, CLKB-GLB, and CLKCGLC) of a given CCC. A PLL macro uses the CLKA CCC input to drive its reference clock. It uses the GLA and, optionally, the GLB and GLC global outputs to drive the global networks. A PLL macro can also drive the YB and YC regular core outputs. The GLB (or GLC) global output cannot be reused if the YB (or YC) output is used (Figure 2-19). Refer to the "PLL Macro" section on page 2-29 for more information. Each global buffer, as well as the PLL reference clock, can be driven from one of the following: • • • 3 dedicated single-ended I/Os using a hardwired connection 2 dedicated differential I/Os using a hardwired connection The FPGA core The CCC block is fully configurable, either via flash configuration bits set in the programming bitstream or through an asynchronous interface. This asynchronous interface is dynamically accessible from inside the Fusion device to permit changes of parameters (such as divide ratios) during device operation. To increase the versatility and flexibility of the clock conditioning system, the CCC configuration is determined either by the user during the design process, with configuration data being stored in flash memory as part of the device programming procedure, or by writing data into a dedicated shift register during normal device operation. This latter mode allows the user to dynamically reconfigure the CCC without the need for core programming. The shift register is accessed through a simple serial interface. Refer to the "UJTAG Applications in Microsemi’s Low-Power Flash Devices" chapter of the Fusion FPGA Fabric User’s Guide and the "CCC and PLL Characteristics" section on page 2-30 for more information. Revision 2 2- 23 Device Architecture Clock Source Input LVDS/LVPECL Macro Clock Conditioning CLKA GLA EXTFB LOCK POWERDOWN Output PADN PADP Y GLB YB GLC YC OADIVRST OADIVHALF OADIV[4:0] OAMUX[2:0] DLYGLA[4:0] OBDIV[4:0] OBMUX[2:0] DLYYB[4:0] DLYGLB[4:0] OCDIV[4:0] OCMUX[2:0] DLYYC[4:0] DLYGLC[4:0] FINDIV[6:0] FBDIV[6:0] FBDLY[4:0] FBSEL[1:0] XDLYSEL VCOSEL[2:0] INBUF2 Macro Y PAD GLA or GLA and (GLB or YB) or GLA and (GLC or YC) or GLA and (GLB or YB) and (GLC or YC) Notes: 1. Visit the Microsemi SoC Products Group website for application notes concerning dynamic PLL reconfiguration. Refer to the "PLL Macro" section on page 2-29 for signal descriptions. 2. Many specific INBUF macros support the wide variety of single-ended and differential I/O standards for the Fusion family. 3. Refer to the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide for more information. Figure 2-19 • Fusion CCC Options: Global Buffers with the PLL Macro Table 2-11 • Available Selections of I/O Standards within CLKBUF and CLKBUF_LVDS/LVPECL Macros CLKBUF Macros CLKBUF_LVCMOS5 CLKBUF_LVCMOS331 CLKBUF_LVCMOS18 CLKBUF_LVCMOS15 CLKBUF_PCI CLKBUF_LVDS2 CLKBUF_LVPECL Notes: 1. This is the default macro. For more details, refer to the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide. 2. The B-LVDS and M-LVDS standards are supported with CLKBUF_LVDS. 2- 24 R e visio n 2 Fusion Family of Mixed Signal FPGAs Global Buffers with No Programmable Delays The CLKBUF and CLKBUF_LVPECL/LVDS macros are composite macros that include an I/O macro driving a global buffer, hardwired together (Figure 2-20). The CLKINT macro provides a global buffer function driven by the FPGA core. The CLKBUF, CLKBUF_LVPECL/LVDS, and CLKINT macros are pass-through clock sources and do not use the PLL or provide any programmable delay functionality. Many specific CLKBUF macros support the wide variety of single-ended and differential I/O standards supported by Fusion devices. The available CLKBUF macros are described in the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide. Clock Source CLKBUF_LVDS/LVPECL Macro PADN PADP Y PAD Y A Y CLKBUF Macro CLKINT Macro Clock Conditioning Output GLA or None GLB or GLC Figure 2-20 • Global Buffers with No Programmable Delay Revision 2 2- 25 Device Architecture Global Buffers with Programmable Delay The CLKDLY macro is a pass-through clock source that does not use the PLL, but provides the ability to delay the clock input using a programmable delay (Figure 2-21). The CLKDLY macro takes the selected clock input and adds a user-defined delay element. This macro generates an output clock phase shift from the input clock. The CLKDLY macro can be driven by an INBUF macro to create a composite macro, where the I/O macro drives the global buffer (with programmable delay) using a hardwired connection. In this case, the I/O must be placed in one of the dedicated global I/O locations. Many specific INBUF macros support the wide variety of single-ended and differential I/O standards supported by the Fusion family. The available INBUF macros are described in the IGLOO, ProASIC3, SmartFusion and Fusion Macro Library Guide. The CLKDLY macro can be driven directly from the FPGA core. The CLKDLY macro can also be driven from an I/O that is routed through the FPGA regular routing fabric. In this case, users must instantiate a special macro, PLLINT, to differentiate from the hardwired I/O connection described earlier. The visual CLKDLY configuration in the SmartGen part of the Libero IDE and Designer tools allows the user to select the desired amount of delay and configures the delay elements appropriately. SmartGen also allows the user to select the input clock source. SmartGen will automatically instantiate the special macro, PLLINT, when needed. Clock Source Input LVDS/LVPECL Macro Clock Conditioning Output GLA CLK PADN PADP DLYGL[4:0] INBUF* Macro Y PAD Y GL or GLB or GLC Figure 2-21 • Fusion CCC Options: Global Buffers with Programmable Delay 2- 26 R e visio n 2 Fusion Family of Mixed Signal FPGAs Global Input Selections Each global buffer, as well as the PLL reference clock, can be driven from one of the following (Figure 222): • • • 3 dedicated single-ended I/Os using a hardwired connection 2 dedicated differential I/Os using a hardwired connection The FPGA core Each shaded box represents an input buffer called out by the appropriate name: INBUF or INBUF_LVDS/LVPECL. Sample Pin Names GAA0 1 To Core GAA1 1 + Source for CCC (CLKA or CLKB or CLKC) GAA2 1 + Routed Clock 2 (from FPGA core) GAA[0:2]: GA represents global in the northwest corner of the device. A[0:2]: designates specific A clock source. Notes: 1. Represents the global input pins. Globals have direct access to the clock conditioning block and are not routed via the FPGA fabric. Refer to the "User I/O Naming Convention" section on page 2-160 for more information. 2. Instantiate the routed clock source input as follows: a) Connect the output of a logic element to the clock input of the PLL, CLKDLY, or CLKINT macro. b) Do not place a clock source I/O (INBUF or INBUF_LVPECL/LVDS) in a relevant global pin location. 3. LVDS-based clock sources are available in the east and west banks on all Fusion devices. Figure 2-22 • Clock Input Sources Including CLKBUF, CLKBUF_LVDS/LVPECL, and CLKINT Revision 2 2- 27 Device Architecture CCC Physical Implementation The CCC circuit is composed of the following (Figure 2-23): • • • • • PLL core 3 phase selectors 6 programmable delays and 1 fixed delay 5 programmable frequency dividers that provide frequency multiplication/division (not shown in Figure 2-23 because they are automatically configured based on the user's required frequencies) 1 dynamic shift register that provides CCC dynamic reconfiguration capability (not shown) CCC Programming The CCC block is fully configurable. It is configured via static flash configuration bits in the array, set by the user in the programming bitstream, or configured through an asynchronous dedicated shift register, dynamically accessible from inside the Fusion device. The dedicated shift register permits changes of parameters such as PLL divide ratios and delays during device operation. This latter mode allows the user to dynamically reconfigure the PLL without the need for core programming. The register file is accessed through a simple serial interface. CLKA Four-Phase Output PLL Core Phase Select Programmable Delay Type 2 GLA Fixed Delay Programmable Delay Type 1 Programmable Delay Type 2 Programmable Delay Type 1 Programmable Delay Type 2 GLB Phase Select YB GLC Phase Select Programmable Delay Type 1 YC Note: Clock divider and multiplier blocks are not shown in this figure or in SmartGen. They are automatically configured based on the user's required frequencies. Figure 2-23 • PLL Block 2- 28 R e visio n 2 Fusion Family of Mixed Signal FPGAs PLL Macro The PLL functionality of the clock conditioning block is supported by the PLL macro. Note that the PLL macro reference clock uses the CLKA input of the CCC block, which is only accessible from the global A[2:0] package pins. Refer to Figure 2-22 on page 2-27 for more information. The PLL macro provides five derived clocks (three independent) from a single reference clock. The PLL feedback loop can be driven either internally or externally. The PLL macro also provides power-down input and lock output signals. During power-up, POWERDOWN should be asserted Low until VCC is up. See Figure 2-19 on page 2-24 for more information. Inputs: • • • • • CLKA: selected clock input POWERDOWN (active low): disables PLLs. The default state is power-down on (active low). LOCK (active high): indicates that PLL output has locked on the input reference signal GLA, GLB, GLC: outputs to respective global networks YB, YC: allows output from the CCC to be routed back to the FPGA core Outputs: As previously described, the PLL allows up to five flexible and independently configurable clock outputs. Figure 2-23 on page 2-28 illustrates the various clock output options and delay elements. As illustrated, the PLL supports three distinct output frequencies from a given input clock. Two of these (GLB and GLC) can be routed to the B and C global networks, respectively, and/or routed to the device core (YB and YC). There are five delay elements to support phase control on all five outputs (GLA, GLB, GLC, YB, and YC). There is also a delay element in the feedback loop that can be used to advance the clock relative to the reference clock. The PLL macro reference clock can be driven by an INBUF macro to create a composite macro, where the I/O macro drives the global buffer (with programmable delay) using a hardwired connection. In this case, the I/O must be placed in one of the dedicated global I/O locations. The PLL macro reference clock can be driven directly from the FPGA core. The PLL macro reference clock can also be driven from an I/O routed through the FPGA regular routing fabric. In this case, users must instantiate a special macro, PLLINT, to differentiate it from the hardwired I/O connection described earlier. The visual PLL configuration in SmartGen, available with the Libero IDE and Designer tools, will derive the necessary internal divider ratios based on the input frequency and desired output frequencies selected by the user. SmartGen allows the user to select the various delays and phase shift values necessary to adjust the phases between the reference clock (CLKA) and the derived clocks (GLA, GLB, GLC, YB, and YC). SmartGen also allows the user to select where the input clock is coming from. SmartGen automatically instantiates the special macro, PLLINT, when needed. Revision 2 2- 29 Device Architecture CCC and PLL Characteristics Timing Characteristics Table 2-12 • Fusion CCC/PLL Specification Parameter Clock Conditioning Circuitry Input Frequency fIN_CCC Clock Conditioning Circuitry Output Frequency fOUT_CCC Delay Increments in Programmable Delay Blocks1, 2 Number of Programmable Values in Each Programmable Delay Block Input Period Jitter CCC Output Peak-to-Peak Period Jitter FCCC_OUT Min. 1.5 0.75 1603 32 1.5 Max Peak-to-Peak Period Jitter 1 Global Network Used 0.75 MHz to 24 MHz 24 MHz to 100 MHz 100 MHz to 250 MHz 250 MHz to 350 MHz Acquisition Time Tracking Jitter4 LockControl = 0 LockControl = 1 LockControl = 0 LockControl = 1 Output Duty Cycle Delay Range in Block: Programmable Delay 1 1, 2 1, 2 Typ. Max. 350 350 Unit MHz MHz ps ns 3 Global Networks Used 1.00% 1.50% 2.25% 3.50% 300 6.0 1.6 0.8 µs ms ns ns % ns ns ns 1.00% 1.50% 2.25% 3.50% 48.5 0.6 0.025 2.2 51.5 5.56 5.56 Delay Range in Block: Programmable Delay 2 1, 2 Delay Range in Block: Fixed Delay Notes: 1. This delay is a function of voltage and temperature. See Table 3-7 on page 3-9 for deratings. 2. TJ = 25°C, VCC = 1.5 V 3. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to SmartGen online help for more information. 4. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to PLL input clock edge. Tracking jitter does not measure the variation in PLL output period, which is covered by period jitter parameter. 2- 30 R e visio n 2 Fusion Family of Mixed Signal FPGAs No-Glitch MUX (NGMUX) Positioned downstream from the PLL/CCC blocks, the NGMUX provides a special switching sequence between two asynchronous clock domains that prevents generating any unwanted narrow clock pulses. The NGMUX is used to switch the source of a global between three different clock sources. Allowable inputs are either two PLL/CCC outputs or a PLL/CCC output and a regular net, as shown in Figure 2-24. The GLMUXCFG[1:0] configuration bits determine the source of the CLK inputs (i.e., internal signal or GLC). These are set by SmartGen during design but can also be changed by dynamically reconfiguring the PLL. The GLMUXSEL[1:0] bits control which clock source is passed through the NGMUX to the global network (GL). See Table 2-13. Crystal Oscillator RC Oscillator W I/O Ring CCC/PLL GLMUXCFG[1:0] GLINT PLL/ CCC Clock I/Os From FPGA Core GLA GLC NGMUX To Clock Rib Driver GL PWR UP GLMUXSEL[1:0] Figure 2-24 • NGMUX Table 2-13 • NGMUX Configuration and Selection Table GLMUXCFG[1:0] 00 GLMUXSEL[1:0] X X 01 X X 0 1 0 1 Selected Input Signal GLA GLC GLA GLINT 2-to-1 GLMUX MUX Type 2-to-1 GLMUX Revision 2 2- 31 Device Architecture The NGMUX macro is simplified to show the two clock options that have been selected by the GLMUXCFG[1:0] bits. Figure 2-25 illustrates the NGMUX macro. During design, the two clock sources are connected to CLK0 and CLK1 and are controlled by GLMUXSEL[1:0] to determine which signal is to be passed through the MUX. CLK0 GL CLK1 GLMUXSEL[1:0] Figure 2-25 • NGMUX Macro The sequence of switching between two clock sources (from CLK0 to CLK1) is as follows (Figure 2-26): • • • • • GLMUXSEL[1:0] transitions to initiate a switch. GL drives one last complete CLK0 positive pulse (i.e., one rising edge followed by one falling edge). From that point, GL stays Low until the second rising edge of CLK1 occurs. At the second CLK1 rising edge, GL will begin to continuously deliver the CLK1 signal. Minimum tsw = 0.05 ns at 25°C (typical conditions) For examples of NGMUX operation, refer to the Fusion FPGA Fabric User’s Guide. tSW CLK0 CLK1 GLMUXSEL[1:0] GL Figure 2-26 • NGMUX Waveform 2- 32 R e visio n 2 Fusion Family of Mixed Signal FPGAs Real-Time Counter System The RTC system enables Fusion devices to support standby and sleep modes of operation to reduce power consumption in many applications. • • • • • • • Sleep mode, typical 10 µA Standby mode (RTC running), typical 3 mA with 20 MHz RTC sub-block inside Analog Block (AB) Voltage Regulator and Power System Monitor (VRPSM) Crystal oscillator (XTLOSC); refer to the "Crystal Oscillator" section in the Fusion Clock Resources chapter of the Fusion FPGA Fabric User’s Guide for more detail. Crystal clock; does not require instantiation in RTL 1.5 V voltage regulator; does not require instantiation in RTL The RTC system is composed of five cores: All cores are powered by 3.3 V supplies, so the RTC system is operational without a 1.5 V supply during standby mode. Figure 2-27 shows their connection. 3.3 V AB Real-Time Counter RTCMATCH VRPSM VRPU VRINITSTATE RTCPSMMATCH RTCPSMMATCH FPGAGOOD PUCORE 1.5 Voltage Regulator External Pass Transistor 2N2222 PTBASE* VREN* VREN* PTEM* 1.5 V RTCCLK PUB RTCXTLSEL RTCXTLMODE[1:0] TRST* XTLOSC SELMODE MODE[1:0] FPGA_EN2 XTL Crystal Clock XTL* Power-Up/-Down Toggle Control Switch External Pin Internal Pin RTC_MODE[1:0] Can Be Route to PLL CLKOUT XTAL1 XTAL2 Cores do not require any RTL instantiation Cores require RTL instantiation1 Sub-block in cores does not require additional RTL instantiation Notes: 1. User is only required to instantiate the VRPSM macro if the user wishes to specify PUPO behavior of the voltage regulator to be different from the default, or employ user logic to shut the voltage regulator off. 2. Signals are hardwired internally and do not exist in the macro core. Figure 2-27 • Real-Time Counter System (not all the signals are shown for the AB macro) Revision 2 2- 33 Device Architecture Modes of Operation Standby Mode Standby mode allows periodic power-up and power-down of the FPGA fabric. In standby mode, the realtime counter and crystal block are ON. The FPGA is not powered by disabling the 1.5 V voltage regulator. The 1.5 V voltage regulator can be enabled when the preset count is matched. Refer to the "Real-Time Counter (part of AB macro)" section for details. To enter standby mode, the RTC must be first configured and enabled. Then VRPSM is shut off by deasserting the VRPU signal. The 1.5 V voltage regulator is then disabled, and shuts off the 1.5 V output. Sleep Mode In sleep mode, the real-time counter and crystal blocks are OFF. The 1.5 V voltage regulator inside the VRPSM can only be enabled by the PUB or TRST pin. Refer to the "Voltage Regulator and Power System Monitor (VRPSM)" section on page 2-37 for details on power-up and power-down of the 1.5 V voltage regulator. Standby and Sleep Mode Circuit Implementation For extra power savings, VJTAG and VPUMP should be at the same voltage as VCC, floated or ground, during standby and sleep modes. Note that when VJTAG is not powered, the 1.5 V voltage regulator cannot be enabled through TRST. VPUMP and VJTAG can be controlled through an external switch. Microsemi recommends ADG839, ADG849, or ADG841 as possible switches. Figure 2-28 shows the implementation for controlling VPUMP. The IN signal of the switch can be connected to PTBASE of the Fusion device. VJTAG can be controlled in same manner. 3.3 V VPUMP (or JTAG) Supply Fusion S IN PTBASE External Pass Transistor 2N2222 ADG841 VPUMP (or JTAG) Pin of Fusion PTEM 1.5 V Figure 2-28 • Implementation to Control VPUMP 2- 34 R e visio n 2 Fusion Family of Mixed Signal FPGAs Real-Time Counter (part of AB macro) The RTC is a 40-bit loadable counter and used as the primary timekeeping element (Figure 2-29). The clock source, RTCCLK, must come from the CLKOUT signal of the crystal oscillator. The RTC can be configured to reset itself when a count value reaches the match value set in the Match Register. The RTC is part of the Analog Block (AB) macro. The RTC is configured by the analog configuration MUX (ACM). Each address contains one byte of data. The circuitry in the RTC is powered by VCC33A, so the RTC can be used in standby mode when the 1.5 V supply is not present. Real-Time Counter xt_mode[1:0] RTCXTLMODE[1:0] Control Status xtal_en RTCXTLSEL MatchBits Reg ACM Registers 1.5 V to 3.3 V Level Shifter Match Reg Counter Read-Hold Reg RTCMATCH RTCPSMMATCH Counter Reg RTCCLK Crystal Prescaler FRTCCLK Divide by 128 40-Bit Counter Figure 2-29 • RTC Block Diagram Table 2-14 • RTC Signal Description Signal Name RTCCLK RTCXTLMODE[1:0] RTCXTLSEL RTCMATCH Width Direction 1 2 1 1 In Out Out Out Function Must come from CLKOUT of XTLOSC. Controlled by xt_mode in CTRL_STAT. Signal must connect to the RTC_MODE signal in XTLOSC, as shown in Figure 2-27. Controlled by xtal_en from CTRL_STAT register. Signal must connect to RTC_MODE signal in XTLOSC in Figure 2-27. Match signal for FPGA 0 – Counter value does not equal the Match Register value. 1 – Counter value equals the Match Register value. RTCPSMMATCH 1 Out Same signal as RTCMATCH. Signal must connect to RTCPSMMATCH in VRPSM, as shown in Figure 2-27. The 40-bit counter can be preloaded with an initial value as a starting point by the Counter Register. The count from the 40-bit counter can be read through the same set of address space. The count comes from a Read-Hold Register to avoid data changing during read. When the counter value equals the Match Register value, all Match Bits Register values will be 0xFFFFFFFFFF. The RTCMATCH and RTCPSMMATCH signals will assert. The 40-bit counter can be configured to automatically reset to 0x0000000000 when the counter value equals the Match Register value. The automatic reset does not apply if the Match Register value is 0x0000000000. The RTCCLK has a prescaler to divide the clock by 128 before it is used for the 40-bit counter. Below is an example of how to calculate the OFF time. Revision 2 2- 35 Device Architecture Example: Calculation for Match Count To put the Fusion device on standby for one hour using an external crystal of 32.768 KHz: The period of the crystal oscillator is Tcrystal: Tcrystal = 1 / 32.768 KHz = 30.518 µs The period of the counter is Tcounter: Tcounter = 30.518 us X 128 = 3.90625 ms The Match Count for 1 hour is Δtmatch: Δtmatch / Tcounter = (1 hr X 60 min/hr X 60 sec/min) / 3.90625 ms = 921600 or 0xE1000 Using a 32.768 KHz crystal, the maximum standby time of the 40-bit counter is 4,294,967,296 seconds, which is 136 years. Table 2-16 • RTC Control/Status Register Bit 7 Name rtc_rst RTC Reset 1 – Resets the RTC 0 – Deassert reset on after two ACM_CLK cycle. 6 cntr_en Counter Enable 1 – Enables the counter; rtc_rst must be deasserted as well. First counter increments after 64 RTCCLK positive edges. 0 – Disables the crystal prescaler but does not reset the counter value. Counter value can only be updated when the counter is disabled. 5 vr_en_mat Voltage Regulator Enable on Match 1 – Enables RTCMATCH and RTCPSMMATCH to output 1 when the counter value equals the Match Register value. This enables the 1.5 V voltage regulator when RTCPSMMATCH connects to the RTCPSMMATCH signal in VRPSM. 0 – RTCMATCH and RTCPSMMATCH output 0 at all times. 4:3 xt_mode[1:0] Crystal Mode Controls RTCXTLMODE[1:0]. Connects to RTC_MODE signal in XTLOSC. XTL_MODE uses this value when xtal_en is 1. See the "Crystal Oscillator" section on page 2-21 for mode configuration. 2 rst_cnt_omat Reset Counter on Match 1 – Enables the sync clear of the counter when the counter value equals the Match Register value. The counter clears on the rising edge of the clock. If all the Match Registers are set to 0, the clear is disabled. 0 – Counter increments indefinitely 1 0 rstb_cnt xtal_en Counter Reset, active Low 0 - Resets the 40-bit counter value Crystal Enable Controls RTCXTLSEL. Connects to SELMODE signal in XTLOSC. 0 – XTLOSC enables control by FPGA_EN; xt_mode is not used. Sleep mode requires this bit to equal 0. 1 – Enables XTLOSC, XTL_MODE control by xt_mode Standby mode requires this bit to be set to 1. See the "Crystal Oscillator" section on page 2-21 for further details on SELMODE configuration. 0 0 0 00 0 0 Description Default Value 2- 36 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-15 • Memory Map for RTC in ACM Register and Description ACMADDR 0x40 0x41 0x42 0x43 0x44 0x48 0x49 0x4A 0x4B 0x4C 0x50 Register Name COUNTER0 COUNTER1 COUNTER2 COUNTER3 COUNTER4 MATCHREG0 MATCHREG1 MATCHREG2 MATCHREG3 MATCHREG4 MATCHBIT0 Description Counter bits 7:0 Counter bits 15:8 Counter bits 23:16 Counter bits 31:24 Counter bits 39:32 Match register bits 7:0 Match register bits 15:8 Match register bits 23:16 Match register bits 31:24 Match register bits 39:32 Individual match bits 7:0 The output of the XNOR gates 0 – Not matched 1 – Matched 0x51 0x52 0x53 0x54 0x58 MATCHBIT1 MATCHBIT2 MATCHBIT3 MATCHBIT4 CTRL_STAT Individual match bits 15:8 Individual match bits 23:16 Individual match bits 31:24 Individual match bits 29:32 Control (write/read) / Status Refer to Table 2-16 (read only) register bits page 2-36 for details. on 0x00 0x00 0x00 0x00 0x00 The RTC comparison bits Use Used to preload the counter to a specified start point. Default Value 0x00 0x00 0x00 0x00 0x00 0x00 0x00 0x00 0x00 0x00 0x00 Voltage Regulator and Power System Monitor (VRPSM) The VRPSM macro controls the power-up state of the FPGA. The power-up bar (PUB) pin can turn on the voltage regulator when set to 0. TRST can enable the voltage regulator when deasserted, allowing the FPGA to power-up when user want access to JTAG ports. The inputs VRINITSTATE and RTCPSMMATCH come from the flash bits and RTC, and can also power up the FPGA. VRPSM VRPU VRINITSTATE RTCPSMMATCH VREN* PUB TRST* FPGAGOOD PUCORE Note: *Signals are hardwired internally and do not exist in the macro core. Figure 2-30 • VRPSM Macro Revision 2 2- 37 Device Architecture Table 2-17 • VRPSM Signal Descriptions Signal Name VRPU Width Dir. 1 In Voltage Regulator Power-Up Function 0 – Voltage regulator disabled. PUB must be floated or pulled up, and the TRST pin must be grounded to disable the voltage regulator. VRINITSTATE 1 In 1 – Voltage regulator enabled Voltage Regulator Initial State Defines the voltage Regulator status upon power-up of the 3.3 V. The signal is configured by Libero IDE when the VRPSM macro is generated. Tie off to 1 – Voltage regulator enables when 3.3 V is powered. RTCPSMMATCH 1 In Tie off to 0 – Voltage regulator disables when 3.3 V is powered. RTC Power System Management Match Connect from RTCPSMATCH signal from RTC in AB PUB 1 In 0 transition to 1 turns on the voltage regulator External pin, built-in weak pull-up Power-Up Bar TRST* FPGAGOOD 1 1 In 0 – Enables voltage regulator at all times External pin, JTAG Test Reset 1 – Enables voltage regulator at all times Out Indicator that the FPGA is powered and functional No need to connect if it is not used. 1 – Indicates that the FPGA is powered up and functional. 0 – Not possible to read by FPGA since it has already powered off. Out Power-Up Core Inverted signal of PUB. No need to connect if it is not used. Out Voltage Regulator Enable Connected to 1.5 V voltage regulator in Fusion device internally. 0 – Voltage regulator disables PUCORE VREN* 1 1 1 – Voltage regulator enables Note: *Signals are hardwired internally and do not exist in the macro core. 2- 38 R e visio n 2 Fusion Family of Mixed Signal FPGAs 3.3 V OFF 3.3 V Power Supply ON/OFF 3.3 V ON VINITSTATE = 0 And PUB = 1 And TRST = 0 Sleep Mode 3.3 V On, VREN Disabled *RTCPSMMATCH = 1 Or PUB = 0 PUB = 0 Or TRST = 1 or TRST = 1 VRPU = 0 And PUB = 1 And TRST = 0 Standby Mode 3.3 V On, RTC Enabled VREN Disabled OFF State 3.3 V Off, PUB Pull-Up, TRST Pull-Down, VREN Disabled VRINITSTATE = 1 or PUB = 0 or TRST = 1 Normal Operation 3.3 V on, VREN Enable VRPU = 0 And PUB = 1 And TRST = 0 And *RTC: CTRL_STAT: xtal_en = 1 3.3 V ON, 1.5 V ON (VR on) Note: * To enter and exit standby mode without any external stimulus on PUB or TRST, the vr_en_mat in the CTRL_STAT register must also be set to 1, so that RTCPSMMATCH will assert when a match occurs; hence the device exits standby mode. Figure 2-31 • State Diagram for All Different Power Modes When TRST is 1 or PUB is 0, the 1.5 V voltage regulator is always ON, putting the Fusion device in normal operation at all times. Therefore, when the JTAG port is not in reset, the Fusion device cannot enter sleep mode or standby mode. To enter standby mode, the Fusion device must first power-up into normal operation. The RTC is enabled through the RTC Control/Status Register described in the "Real-Time Counter (part of AB macro)" section on page 2-35. A match value corresponding to the wake-up time is loaded into the Match Register. The 1.5 V voltage regulator is disabled by setting VRPU to 0 to allow the Fusion device to enter standby mode, when the 1.5 V supply is off but the RTC remains on. Revision 2 2- 39 Device Architecture 1.5 V Voltage Regulator The 1.5 V voltage regulator uses an external pass transistor to generate 1.5 V from a 3.3 V supply. The base of the pass transistor is tied to PTBASE, the collector is tied to 3.3 V, and an emitter is tied to PTBASE and the 1.5 V supplies of the Fusion device. Figure 2-27 on page 2-33 shows the hook-up of the 1.5 V voltage regulator to an external pass transistor. Microsemi recommends using a PN2222A or 2N2222A transistor. The gain of such a transistor is approximately 25, with a maximum base current of 20 mA. The maximum current that can be supported is 0.5 A. Transistors with different gain can also be used for different current requirements. Table 2-18 • Electrical Characteristics VCC33A = 3.3 V Symbol VOUT ICC33A Parameter Output Voltage Operation Current Condition Tj = 25ºC Tj = 25ºC ILOAD = 1 mA ILOAD = 100 mA ILOAD = 0.5 A ΔVOUT ΔVOUT Load Regulation Line Regulation Tj = 25ºC Tj = 25ºC ILOAD = 1 mA to 0.5 A VCC33A = 2.97 V to 3.63 V ILOAD = 1 mA VCC33A = 2.97 V to 3.63 V ILOAD = 100 mA VCC33A = 2.97 V to 3.63 V ILOAD = 500 mA Dropout Voltage* Tj = 25ºC ILOAD = 1 mA ILOAD = 100 mA ILOAD = 0.5 A IPTBAS E PTBase Current Tj = 25ºC ILOAD = 1 mA ILOAD = 100 mA ILOAD = 0.5 A Note: *Data collected with 2N2222A. 12.1 10.6 0.63 0.84 1.35 48 736 12 mV/V mV/V V V V µA µA mA 10.6 mV/V Min 1.425 Typical 1.5 11 11 30 90 Max 1.575 Units V mA mA mA mV 20 2- 40 R e visio n 2 Fusion Family of Mixed Signal FPGAs Embedded Memories Fusion devices include four types of embedded memory: flash block, FlashROM, SRAM, and FIFO. Flash Memory Block Fusion is the first FPGA that offers a flash memory block (FB). Each FB block stores 2 Mbits of data. The flash memory block macro is illustrated in Figure 2-32. The port pin name and descriptions are detailed on Table 2-19 on page 2-42. All flash memory block signals are active high, except for CLK and active low RESET. All flash memory operations are synchronous to the rising edge of CLK. ADDR[17:0] WD[31:0] DATAWIDTH[1:0] REN READNEXT PAGESTATUS WEN ERASEPAGE PROGRAM SPAREPAGE AUXBLOCK UNPROTECTPAGE OVERWRITEPAGE DISCARDPAGE OVERWRITEPROTECT PAGELOSSPROTECT PIPE LOCKREQUEST CLK RD[31:0] BUSY STATUS[1:0] RESET Figure 2-32 • Flash Memory Block Revision 2 2- 41 Device Architecture Flash Memory Block Pin Names Table 2-19 • Flash Memory Block Pin Names Interface Name ADDR[17:0] AUXBLOCK BUSY CLK DATAWIDTH[1:0] Width Direction 18 1 1 1 2 In In Out In In Description Byte offset into the FB. Byte-based address. When asserted, the page addressed is used to access the auxiliary block within that page. When asserted, indicates that the FB is performing an operation. User interface clock. All operations and status are synchronous to the rising edge of this clock. Data width 00 = 1 byte in RD/WD[7:0] 01 = 2 bytes in RD/WD[15:0] 1x = 4 bytes in RD/WD[31:0] DISCARDPAGE ERASEPAGE 1 1 In In When asserted, the contents of the Page Buffer are discarded so that a new page write can be started. When asserted, the address page is to be programmed with all zeros. ERASEPAGE must transition synchronously with the rising edge of CLK. When asserted, indicates to the JTAG controller that the FPGA interface is accessing the FB. When asserted, the page addressed is overwritten with the contents of the Page Buffer if the page is writable. When asserted, all program operations will set the overwrite protect bit of the page being programmed. When asserted with REN, initiates a read page status operation. When asserted, a modified Page Buffer must be programmed or discarded before accessing a new page. Adds a pipeline stage to the output for operation above 50 MHz. When asserted, writes the contents of the Page Buffer into the FB page addressed. Read data; data will be valid from the first non-busy cycle (BUSY = 0) after REN has been asserted. When asserted with REN, initiates a read-next operation. When asserted, initiates a read operation. When asserted, resets the state of the FB (active low). When asserted, the sector addressed is used to access the spare page within that sector. LOCKREQUEST OVERWRITEPAGE OVERWRITEPROTECT PAGESTATUS PAGELOSSPROTECT PIPE PROGRAM RD[31:0] READNEXT REN RESET SPAREPAGE 1 1 1 1 1 1 1 32 1 1 1 1 In In In In In In In Out In In In In 2- 42 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-19 • Flash Memory Block Pin Names (continued) Interface Name STATUS[1:0] Width Direction 2 Out 00: Successful completion 01: Read-/Unprotect-Page: single error detected and corrected Write: operation addressed a write-protected page Erase-Page: protection violation Program: Page Buffer is unmodified Protection violation 10: Read-/Unprotect-Page: two or more errors detected 11: Write: attempt to write to another page before programming current page Erase-Page/Program: page write count has exceeded the 10-year retention threshold UNPROTECTPAGE WD[31:0] WEN 1 32 1 In In In When asserted, the page addressed is copied into the Page Buffer and the Page Buffer is made writable. Write data When asserted, stores WD in the page buffer. Description Status of the last operation completed: All flash memory block input signals are active high, except for RESET. Revision 2 2- 43 Device Architecture Flash Memory Block Diagram A simplified diagram of the flash memory block is shown in Figure 2-33. RD[31:0] Output MUX ECC Logic Page Buffer = 8 Blocks Plus AUX Block Flash Array = 64 Sectors Block Buffer (128 bits) WD[31 :0] ADDDR[17:0] DATAWIDTH[1:0] REN READNEXT PAGESTATUS WEN ERASEPAGE PROGRAM SPAREPAGE AUXBLOCK UNPROTECTPAGE OVERWRITEPAGE DISCARDPAGE OVERWRITEPROTECT PAGELOSSPROTECT PIPE LOCKREQUEST CLK RESET STATUS[1:0] BUSY Control Logic Figure 2-33 • Flash Memory Block Diagram The logic consists of the following sub-blocks: • Flash Array Contains all stored data. The flash array contains 64 sectors, and each sector contains 33 pages of data. • • • Page Buffer A page-wide volatile register. A page contains 8 blocks of data and an AUX block. Block Buffer Contains the contents of the last block accessed. A block contains 128 data bits. ECC Logic The FB stores error correction information with each block to perform single-bit error correction and double-bit error detection on all data blocks. 2- 44 R e visio n 2 Fusion Family of Mixed Signal FPGAs Flash Memory Block Addressing Figure 2-34 shows a graphical representation of the flash memory block. Spare Page Page 31 P 33 es ag Page 3 Page 2 Page 1 Page 0 .. .. n tor ec S r1 c to Se r0 c to Se 1190 140 .... Block 0 1 2 3 4 5 6 7 Aux Block Block Organization User Data (32 bits) Byte 14 Figure 2-34 • Flash Memory Block Organization Each FB is partitioned into sectors, pages, blocks, and bytes. There are 64 sectors in an FB, and each sector contains 32 pages and 1 spare page. Each page contains 8 data blocks and 1 auxiliary block. Each data block contains 16 bytes of user data, and the auxiliary block contains 4 bytes of user data. Addressing for the FB is shown in Table 2-20. Table 2-20 • FB Address Bit Allocation ADDR[17:0] 17 Sector 12 11 Page 7 6 Block 4 3 Byte 0 When the spare page of a sector is addressed (SPAREPAGE active), ADDR[11:7] are ignored. When the Auxiliary block is addressed (AUXBLOCK active), ADDR[6:2] are ignored. Note: The spare page of sector 0 is unavailable for any user data. Writes to this page will return an error, and reads will return all zeroes. Byte 15 Byte 0 Byte 1 Byte 2 Byte 3 Notes: 1 block = 128 bits 1 page = 8 blocks plus the AUX block 1 sector = 33 pages 1 Flash array = 64 sectors Revision 2 .... 2- 45 Device Architecture Data operations are performed in widths of 1 to 4 bytes. A write to a location in a page that is not already in the Page Buffer will cause the page to be read from the FB Array and stored in the Page Buffer. The block that was addressed during the write will be put into the Block Buffer, and the data written by WD will overwrite the data in the Block Buffer. After the data is written to the Block Buffer, the Block Buffer is then written to the Page Buffer to keep both buffers in sync. Subsequent writes to the same block will overwrite the Block Buffer and the Page Buffer. A write to another block in the page will cause the addressed block to be loaded from the Page Buffer, and the write will be performed as described previously. The data width can be selected dynamically via the DATAWIDTH input bus. The truth table for the data width settings is detailed in Table 2-21. The minimum resolvable address is one 8-bit byte. For data widths greater than 8 bits, the corresponding address bits are ignored—when DATAWIDTH = 0 (2 bytes), ADDR[0] is ignored, and when DATAWIDTH = '10' or '11' (4 bytes), ADDR[1:0] are ignored. Data pins are LSB-oriented and unused WD data pins must be grounded. Table 2-21 • Data Width Settings DATAWIDTH[1:0] 00 01 10, 11 Data Width 1 byte [7:0] 2 byte [15:0] 4 bytes [31:0] Flash Memory Block Protection Page Loss Protection When the PAGELOSSPROTECT pin is set to logic 1, it prevents writes to any page other than the current page in the Page Buffer until the page is either discarded or programmed. A write to another page while the current page is Page Loss Protected will return a STATUS of '11'. Overwrite Protection Any page that is Overwrite Protected will result in the STATUS being set to '01' when an attempt is made to either write, program, or erase it. To set the Overwrite Protection state for a page, set the OVERWRITEPROTECT pin when a Program operation is undertaken. To clear the Overwrite Protect state for a given page, an Unprotect Page operation must be performed on the page, and then the page must be programmed with the OVERWRITEPROTECT pin cleared to save the new page. LOCKREQUEST The LOCKREQUEST signal is used to give the user interface control over simultaneous access of the FB from both the User and JTAG interfaces. When LOCKREQUEST is asserted, the JTAG interface will hold off any access attempts until LOCKREQUEST is deasserted. Flash Memory Block Operations FB Operation Priority The FB provides for priority of operations when multiple actions are requested simultaneously. Table 2-22 shows the priority order (priority 0 is the highest). Table 2-22 • FB Operation Priority Operation System Initialization FB Reset Read Write Erase Page Program Unprotect Page Discard Page Priority 0 1 2 3 4 5 6 7 2- 46 R e visio n 2 Fusion Family of Mixed Signal FPGAs Access to the FB is controlled by the BUSY signal. The BUSY output is synchronous to the CLK signal. FB operations are only accepted in cycles where BUSY is logic 0. Write Operation Write operations are initiated with the assertion of the WEN signal. Figure 2-35 on page 2-47 illustrates the multiple Write operations. CLK WEN ADDR[17:0] WD[31:0] DATAWIDTH[1:0] PAGELOSSPROTECT BUSY STATUS[1:0] S0 S1 S2 S3 S4 S5 S6 A0 D0 A1 D1 A2 D2 A3 D3 A4 D4 A5 D5 A6 D6 Figure 2-35 • FB Write Waveform When a Write operation is initiated to a page that is currently not in the Page Buffer, the FB control logic will issue a BUSY signal to the user interface while the page is loaded from the FB Array into the Page Buffer. A Copy Page operation takes no less than 55 cycles and could take more if a Write or Unprotect Page operation is started while the NVM is busy pre-fetching a block. The basic operation is to read a block from the array into the block register (5 cycles) and then write the block register to the page buffer (1 cycle) and if necessary, when the copy is complete, reading the block being written from the page buffer into the block buffer (1 cycle). A page contains 9 blocks, so 9 blocks multiplied by 6 cycles to read/write each block, plus 1 is 55 cycles total. Subsequent writes to the same block of the page will incur no busy cycles. A write to another block in the page will assert BUSY for four cycles (five cycles when PIPE is asserted), to allow the data to be written to the Page Buffer and have the current block loaded into the Block Buffer. Write operations are considered successful as long as the STATUS output is '00'. A non-zero STATUS indicates that an error was detected during the operation and the write was not performed. Note that the STATUS output is "sticky"; it is unchanged until another operation is started. Only one word can be written at a time. Write word width is controlled by the DATAWIDTH bus. Users are responsible for keeping track of the contents of the Page Buffer and when to program it to the array. Just like a regular RAM, writing to random addresses is possible. Users can write into the Page Buffer in any order but will incur additional BUSY cycles. It is not necessary to modify the entire Page Buffer before saving it to nonvolatile memory. Write errors include the following: 1. Attempting to write a page that is Overwrite Protected (STATUS = '01'). The write is not performed. 2. Attempting to write to a page that is not in the Page Buffer when Page Loss Protection is enabled (STATUS = '11'). The write is not performed. Revision 2 2- 47 Device Architecture Program Operation A Program operation is initiated by asserting the PROGRAM signal on the interface. Program operations save the contents of the Page Buffer to the FB Array. Due to the technologies inherent in the FB, a program operation is a time consuming operation (~8 ms). While the FB is writing the data to the array, the BUSY signal will be asserted. During a Program operation, the sector and page addresses on ADDR are compared with the stored address for the page (and sector) in the Page Buffer. If there is a mismatch between the two addresses, the Program operation will be aborted and an error will be reported on the STATUS output. It is possible to write the Page Buffer to a different page in memory. When asserting the PROGRAM pin, if OVERWRITEPAGE is asserted as well, the FB will write the contents of the Page Buffer to the sector and page designated on the ADDR inputs if the destination page is not Overwrite Protected. A Program operation can be utilized to either modify the contents of the page in the flash memory block or change the protections for the page. Setting the OVERWRITEPROTECT bit on the interface while asserting the PROGRAM pin will put the page addressed into Overwrite Protect Mode. Overwrite Protect Mode safeguards a page from being inadvertently overwritten during subsequent Program or Erase operations. Program operations that result in a STATUS value of '01' do not modify the addressed page. For all other values of STATUS, the addressed page is modified. Program errors include the following: 1. Attempting to program a page that is Overwrite Protected (STATUS = '01') 2. Attempting to program a page that is not in the Page Buffer when the Page Buffer has entered Page Loss Protection Mode (STATUS = '01') 3. Attempting to perform a program with OVERWRITEPAGE set when the page addressed has been Overwrite Protected (STATUS = '01') 4. The Write Count of the page programmed exceeding the Write Threshold defined in the part specification (STATUS = '11') 5. The ECC Logic determining that there is an uncorrectable error within the programmed page (STATUS = '10') 6. Attempting to program a page that is not in the Page Buffer when OVERWRITEPAGE is not set and the page in the Page Buffer is modified (STATUS = '01') 7. Attempting to program the page in the Page Buffer when the Page Buffer is not modified The waveform for a Program operation is shown in Figure 2-36. C LK PROGRAM ADDR[17:0] OVERWRITEPAGE OVERWRITEPROTECT PAGELOSSPROTECT BUSY STATUS[1:0] 0 Valid Page Figure 2-36 • FB Program Waveform Note: OVERWRITEPAGE is only sampled when the PROGRAM or ERASEPAGE pins are asserted. OVERWRITEPAGE is ignored in all other operations. 2- 48 R e visio n 2 Fusion Family of Mixed Signal FPGAs Erase Page Operation The Erase Page operation is initiated when the ERASEPAGE pin is asserted. The Erase Page operation allows the user to erase (set user data to zero) any page within the FB. The use of the OVERWRITEPAGE and PAGELOSSPROTECT pins is the same for erase as for a Program Page operation. As with the Program Page operation, a STATUS of '01' indicates that the addressed page is not erased. A waveform for an Erase Page operation is shown in Figure 2-37. Erase errors include the following: 1. Attempting to erase a page that is Overwrite Protected (STATUS = '01') 2. Attempting to erase a page that is not in the Page Buffer when the Page Buffer has entered Page Loss Protection mode (STATUS = '01') 3. The Write Count of the erased page exceeding the Write Threshold defined in the part specification (STATUS = '11') 4. The ECC Logic determining that there is an uncorrectable error within the erased page (STATUS = '10') CLK ERASE ADDR[17:0] OVERWRITEPROTECT PAGELOSSPROTECT BUSY STATUS[1:0] Valid Page Figure 2-37 • FB Erase Page Waveform Revision 2 2- 49 Device Architecture Read Operation Read operations are designed to read data from the FB Array, Page Buffer, Block Buffer, or status registers. Read operations support a normal read and a read-ahead mode (done by asserting READNEXT). Also, the timing for Read operations is dependent on the setting of PIPE. The following diagrams illustrate representative timing for Non-Pipe Mode (Figure 2-38) and Pipe Mode (Figure 2-39) reads of the flash memory block interface. CLK REN ADDR[17:0] DATAWIDTH[1:0] BUSY STATUS[1:0] RD[31:0] 0 0 S0 D0 S1 D1 S2 D2 S3 D3 0 0 D4 S4 0 A0 A1 A2 A3 A4 Figure 2-38 • Read Waveform (Non-Pipe Mode, 32-bit access) CLK REN ADDR[17:0] DATAWIDTH[1:0] BUSY STATUS[1:0] RD[31:0] 0 0 S0 D0 S1 D1 S2 D2 S3 D3 0 0 X S4 D4 0 A0 A1 A2 A3 A4 Figure 2-39 • Read Waveform (Pipe Mode, 32-bit access) 2- 50 R e visio n 2 Fusion Family of Mixed Signal FPGAs The following error indications are possible for Read operations: 1. STATUS = '01' when a single-bit data error was detected and corrected within the block addressed. 2. STATUS = '10' when a double-bit error was detected in the block addressed (note that the error is uncorrected). In addition to data reads, users can read the status of any page in the FB by asserting PAGESTATUS along with REN. The format of the data returned by a page status read is shown in Table 2-23, and the definition of the page status bits is shown in Table 2-24. Table 2-23 • Page Status Read Data Format 31 8 7 4 3 2 Read Protected 1 Write Protected 0 Overwrite Protected Write Count Reserved Over Threshold Table 2-24 • Page Status Bit Definition Page Status Bit(s) 31–8 7–4 3 2 Definition The number of times the page addressed has been programmed/erased Reserved; read as 0 Over Threshold indicator (see the"Program Operation" section on page 2-48) Read Protected; read protect bit for page, which is set via the JTAG interface and only affects JTAG operations. This bit can be overridden by using the correct user key value. Write Protected; write protect bit for page, which is set via the JTAG interface and only affects JTAG operations. This bit can be overridden by using the correct user key value. Overwrite Protected; designates that the user has set the OVERWRITEPROTECT bit on the interface while doing a Program operation. The page cannot be written without first performing an Unprotect Page operation. 1 0 Revision 2 2- 51 Device Architecture Read Next Operation The Read Next operation is a feature by which the next block relative to the block in the Block Buffer is read from the FB Array while performing reads from the Block Buffer. The goal is to minimize wait states during consecutive sequential Read operations. The Read Next operation is performed in a predetermined manner because it does look-ahead reads. The general look-ahead function is as follows: • • • • • Within a page, the next block fetched will be the next in linear address. When reading the last data block of a page, it will fetch the first block of the next page. When reading spare pages, it will read the first block of the next sector's spare page. Reads of the last sector will wrap around to sector 0. Reads of Auxiliary blocks will read the next linear page's Auxiliary block. When an address on the ADDR input does not agree with the predetermined look-ahead address, there is a time penalty for this access. The FB will be busy finishing the current look-ahead read before it can start the next read. The worst case is a total of nine BUSY cycles before data is delivered. The Non-Pipe Mode and Pipe Mode waveforms for Read Next operations are illustrated in Figure 2-40 and Figure 2-41. CLK REN READNEXT ADDR[17:0] DATAWIDTH[1:0] BUSY STATUS[1:0] RD[31:0] 0 0 S0 D0 S1 D1 S2 D2 S3 D3 0 0 S4 D4 S5 D5 S6 D6 S7 D7 0 0 S8 D8 S9 D9 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 Figure 2-40 • Read Next Waveform (Non-Pipe Mode, 32-bit access) CLK REN READNEXT ADDR[17:0] BUSY STATUS[1:0] RD[31:0] 0 S0 D0 S1 D1 S2 D2 S3 D3 0 0 S4 D4 S5 D5 S6 D6 S7 D7 0 0 A0 A1 A2 A3 A4 A5 A6 A7 A8 Figure 2-41 • Read Next WaveForm (Pipe Mode, 32-bit access) 2- 52 R e visio n 2 Fusion Family of Mixed Signal FPGAs Unprotect Page Operation An Unprotect Page operation will clear the protection for a page addressed on the ADDR input. It is initiated by setting the UNPROTECTPAGE signal on the interface along with the page address on ADDR. If the page is not in the Page Buffer, the Unprotect Page operation will copy the page into the Page Buffer. The Copy Page operation occurs only if the current page in the Page Buffer is not Page Loss Protected. The waveform for an Unprotect Page operation is shown in Figure 2-42. CLK UNPROTECTPAGE ADDR[17:0] BUSY STATUS[1:0] Figure 2-42 • FB Unprotected Page Waveform The Unprotect Page operation can incur the following error conditions: 1. If the copy of the page to the Page Buffer determines that the page has a single-bit correctable error in the data, it will report a STATUS = '01'. 2. If the address on ADDR does not match the address of the Page Buffer, PAGELOSSPROTECT is asserted, and the Page Buffer has been modified, then STATUS = '11' and the addressed page is not loaded into the Page Buffer. 3. If the copy of the page to the Page Buffer determines that at least one block in the page has a double-bit uncorrectable error, STATUS = '10' and the Page Buffer will contain the corrupted data. Page Valid Discard Page Operation If the contents of the modified Page Buffer have to be discarded, the DISCARDPAGE signal should be asserted. This command results in the Page Buffer being marked as unmodified. The timing for the operation is shown in Figure 2-43. The BUSY signal will remain asserted until the operation has completed. CLK DISCARDPAGE BUSY Figure 2-43 • FB Discard Page Waveform Revision 2 2- 53 Device Architecture Flash Memory Block Characteristics CLK RESET Active Low, Asynchronous BUSY Figure 2-44 • Reset Timing Diagram Table 2-25 • Flash Memory Block Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tCLK2RD tCLK2BUSY tCLK2STATUS tDSUNVM tDHNVM tASUNVM tAHNVM tSUDWNVM tHDDWNVM tSURENNVM tHDRENNVM tSUWENNVM tHDWENNVM tSUPROGNVM tHDPROGNVM tSUSPAREPAGE tHDSPAREPAGE tSUAUXBLK tHDAUXBLK tSURDNEXT tHDRDNEXT tSUERASEPG tHDERASEPG tSUUNPROTECTPG tHDUNPROTECTPG tSUDISCARDPG tHDDISCARDPG tSUOVERWRPRO tHDOVERWRPRO Description Clock-to-Q in 5-cycle read mode of the Read Data Clock-to-Q in 6-cycle read mode of the Read Data Clock-to-Q in 5-cycle read mode of BUSY Clock-to-Q in 6-cycle read mode of BUSY Clock-to-Status in 5-cycle read mode Clock-to-Status in 6-cycle read mode Data Input Setup time for the Control Logic Data Input Hold time for the Control Logic Address Input Setup time for the Control Logic Address Input Hold time for the Control Logic Data Width Setup time for the Control Logic Data Width Hold time for the Control Logic Read Enable Setup time for the Control Logic Read Enable Hold Time for the Control Logic Write Enable Setup time for the Control Logic Write Enable Hold Time for the Control Logic Program Setup time for the Control Logic Program Hold time for the Control Logic SparePage Setup time for the Control Logic SparePage Hold time for the Control Logic Auxiliary Block Setup Time for the Control Logic Auxiliary Block Hold Time for the Control Logic ReadNext Setup Time for the Control Logic ReadNext Hold Time for the Control Logic Erase Page Setup Time for the Control Logic Erase Page Hold Time for the Control Logic Unprotect Page Setup Time for the Control Logic Unprotect Page Hold Time for the Control Logic Discard Page Setup Time for the Control Logic Discard Page Hold Time for the Control Logic Overwrite Protect Setup Time for the Control Logic Overwrite Protect Hold Time for the Control Logic –2 7.99 5.03 4.95 4.45 11.24 4.48 1.92 0.00 2.76 0.00 1.85 0.00 3.85 0.00 2.37 0.00 2.16 0.00 3.74 0.00 3.74 0.00 2.17 0.00 3.76 0.00 2.01 0.00 1.88 0.00 1.64 0.00 –1 9.10 5.73 5.63 5.07 12.81 5.10 2.19 0.00 3.14 0.00 2.11 0.00 4.39 0.00 2.69 0.00 2.46 0.00 4.26 0.00 4.26 0.00 2.47 0.00 4.28 0.00 2.29 0.00 2.14 0.00 1.86 0.00 Std. 10.70 6.74 6.62 5.96 15.06 6.00 2.57 0.00 3.69 0.00 2.48 0.00 5.16 0.00 3.17 0.00 2.89 0.00 5.01 0.00 5.00 0.00 2.90 0.00 5.03 0.00 2.69 0.00 2.52 0.00 2.19 0.00 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2- 54 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-25 • Flash Memory Block Timing (continued) Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tSUPGLOSSPRO tHDPGLOSSPRO tSUPGSTAT tHDPGSTAT tSUOVERWRPG tHDOVERWRPG tSULOCKREQUEST tHDLOCKREQUEST tRECARNVM tREMARNVM tMPWARNVM tMPWCLKNVM tFMAXCLKNVM Description Page Loss Protect Setup Time for the Control Logic Page Loss Protect Hold Time for the Control Logic Page Status Setup Time for the Control Logic Page Status Hold Time for the Control Logic Over Write Page Setup Time for the Control Logic Over Write Page Hold Time for the Control Logic Lock Request Setup Time for the Control Logic Lock Request Hold Time for the Control Logic Reset Recovery Time Reset Removal Time Asynchronous Reset Minimum Pulse Width for the Control Logic Clock Minimum Pulse Width for the Control Logic Maximum Frequency for Clock for the Control Logic – for AFS1500/AFS600 Maximum Frequency for Clock for the Control Logic – for AFS250/AFS090 –2 1.69 0.00 2.49 0.00 1.88 0.00 0.87 0.00 0.94 0.00 10.00 4.00 80.00 100.00 –1 1.93 0.00 2.83 0.00 2.14 0.00 0.99 0.00 1.07 0.00 12.50 5.00 80.00 80.00 Std. 2.27 0.00 3.33 0.00 2.52 0.00 1.16 0.00 1.25 0.00 12.50 5.00 80.00 80.00 Units ns ns ns ns ns ns ns ns ns ns ns ns MHz MHz Revision 2 2- 55 Device Architecture FlashROM Fusion devices have 1 kbit of on-chip nonvolatile flash memory that can be read from the FPGA core fabric. The FlashROM is arranged in eight banks of 128 bits during programming. The 128 bits in each bank are addressable as 16 bytes during the read-back of the FlashROM from the FPGA core (Figure 245). The FlashROM can only be programmed via the IEEE 1532 JTAG port. It cannot be programmed directly from the FPGA core. When programming, each of the eight 128-bit banks can be selectively reprogrammed. The FlashROM can only be reprogrammed on a bank boundary. Programming involves an automatic, on-chip bank erase prior to reprogramming the bank. The FlashROM supports a synchronous read and can be read on byte boundaries. The upper three bits of the FlashROM address from the FPGA core define the bank that is being accessed. The lower four bits of the FlashROM address from the FPGA core define which of the 16 bytes in the bank is being accessed. The maximum FlashROM access clock is given in Table 2-26 on page 2-57. Figure 2-46 shows the timing behavior of the FlashROM access cycle—the address has to be set up on the rising edge of the clock for DOUT to be valid on the next falling edge of the clock. If the address is unchanged for two cycles: • • • • • • D0 becomes invalid tCK2Q ns after the second rising edge of the clock. D0 becomes valid again tCK2Q ns after the second falling edge. D0 becomes invalid tCK2Q ns after the second rising edge of the clock. D0 becomes valid again tCK2Q ns after the second falling edge. D0 becomes invalid tCK2Q ns after the third rising edge of the clock. D0 becomes valid again tCK2Q ns after the third falling edge. If the address unchanged for three cycles: Byte Number in Bank 15 14 13 7 6 5 4 3 2 1 0 Bank Number 3 MSB of ADDR (READ) 4 LSB of ADDR (READ) 9 8 7 6 5 4 3 2 1 0 12 11 10 Figure 2-45 • FlashROM Architecture 2- 56 R e visio n 2 Fusion Family of Mixed Signal FPGAs FlashROM Characteristics tSU tSU tSU Address tHOLD A0 tHOLD A1 tHOLD tCK2Q D0 tCK2Q D0 tCK2Q D1 Figure 2-46 • FlashROM Timing Diagram Table 2-26 • FlashROM Access Time Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tSU tHOLD tCK2Q FMAX Description Address Setup Time Address Hold Time Clock to Out Maximum Clock frequency –2 0.53 0.00 21.42 15.00 –1 0.61 0.00 24.40 15.00 Std. 0.71 0.00 28.68 15.00 Units ns ns ns MHz Revision 2 2- 57 Device Architecture SRAM and FIFO All Fusion devices have SRAM blocks along the north side of the device. Additionally, AFS600 and AFS1500 devices have an SRAM block on the south side of the device. To meet the needs of highperformance designs, the memory blocks operate strictly in synchronous mode for both read and write operations. The read and write clocks are completely independent, and each may operate at any desired frequency less than or equal to 350 MHz. The following configurations are available: • • • 4k×1, 2k×2, 1k×4, 512×9 (dual-port RAM—two read, two write or one read, one write) 512×9, 256×18 (two-port RAM—one read and one write) Sync write, sync pipelined/nonpipelined read The Fusion SRAM memory block includes dedicated FIFO control logic to generate internal addresses and external flag logic (FULL, EMPTY, AFULL, AEMPTY). During RAM operation, addresses are sourced by the user logic, and the FIFO controller is ignored. In FIFO mode, the internal addresses are generated by the FIFO controller and routed to the RAM array by internal MUXes. Refer to Figure 2-47 for more information about the implementation of the embedded FIFO controller. The Fusion architecture enables the read and write sizes of RAMs to be organized independently, allowing for bus conversion. This is done with the WW (write width) and RW (read width) pins. The different D×W configurations are 256×18, 512×9, 1k×4, 2k×2, and 4k×1. For example, the write size can be set to 256×18 and the read size to 512×9. Both the write and read widths for the RAM blocks can be specified independently with the WW (write width) and RW (read width) pins. The different D×W configurations are 256×18, 512×9, 1k×4, 2k×2, and 4k×1. Refer to the allowable RW and WW values supported for each of the RAM macro types in Table 2-27 on page 2-61. When a width of one, two, or four is selected, the ninth bit is unused. For example, when writing 9-bit values and reading 4-bit values, only the first four bits and the second four bits of each 9-bit value are addressable for read operations. The ninth bit is not accessible. 2- 58 R e visio n 2 Fusion Family of Mixed Signal FPGAs Conversely, when writing 4-bit values and reading 9-bit values, the ninth bit of a read operation will be undefined. The RAM blocks employ little-endian byte order for read and write operations. RD[17:0] WD RCLK WCLK WD[17:0] RCLK WCLK RADD[J:0] WADD[J:0] FREN REN WEN RAM RD FWEN RBLK REN ESTOP CNT 12 E = AFVAL AFULL FULL WBLK WEN FSTOP Reset CNT 12 E SUB 12 AEVAL AEMPTY EMPTY = Figure 2-47 • Fusion RAM Block with Embedded FIFO Controller Revision 2 RW[2:0] WW[2:0] RPIPE 2- 59 Device Architecture RAM4K9 Description RAM4K9 ADDRA11 DOUTA8 ADDRA10 DOUTA7 ADDRA0 DINA8 DINA7 DOUTA0 DINA0 WIDTHA1 WIDTHA0 PIPEA WMODEA BLKA WENA CLKA ADDRB11 ADDRB10 ADDRB0 DINB8 DINB7 DINB0 WIDTHB1 WIDTHB0 PIPEB WMODEB BLKB WENB CLKB RESET DOUTB8 DOUTB7 DOUTB0 Figure 2-48 • RAM4K9 2- 60 R e visio n 2 Fusion Family of Mixed Signal FPGAs The following signals are used to configure the RAM4K9 memory element: WIDTHA and WIDTHB These signals enable the RAM to be configured in one of four allowable aspect ratios (Table 2-27). Table 2-27 • Allowable Aspect Ratio Settings for WIDTHA[1:0] WIDTHA1, WIDTHA0 00 01 10 11 WIDTHB1, WIDTHB0 00 01 10 11 D×W 4k×1 2k×2 1k×4 512×9 Note: The aspect ratio settings are constant and cannot be changed on the fly. BLKA and BLKB These signals are active low and will enable the respective ports when asserted. When a BLKx signal is deasserted, the corresponding port’s outputs hold the previous value. WENA and WENB These signals switch the RAM between read and write mode for the respective ports. A Low on these signals indicates a write operation, and a High indicates a read. CLKA and CLKB These are the clock signals for the synchronous read and write operations. These can be driven independently or with the same driver. PIPEA and PIPEB These signals are used to specify pipelined read on the output. A Low on PIPEA or PIPEB indicates a nonpipelined read, and the data appears on the corresponding output in the same clock cycle. A High indicates a pipelined, read and data appears on the corresponding output in the next clock cycle. WMODEA and WMODEB These signals are used to configure the behavior of the output when the RAM is in write mode. A Low on these signals makes the output retain data from the previous read. A High indicates pass-through behavior, wherein the data being written will appear immediately on the output. This signal is overridden when the RAM is being read. RESET This active low signal resets the output to zero, disables reads and writes from the SRAM block, and clears the data hold registers when asserted. It does not reset the contents of the memory. ADDRA and ADDRB These are used as read or write addresses, and they are 12 bits wide. When a depth of less than 4 k is specified, the unused high-order bits must be grounded (Table 2-28). Table 2-28 • Address Pins Unused/Used for Various Supported Bus Widths ADDRx D×W 4k×1 2k×2 1k×4 512×9 Unused None [11] [11:10] [11:9] Used [11:0] [10:0] [9:0] [8:0] Note: The "x" in ADDRx implies A or B. Revision 2 2- 61 Device Architecture DINA and DINB These are the input data signals, and they are nine bits wide. Not all nine bits are valid in all configurations. When a data width less than nine is specified, unused high-order signals must be grounded (Table 2-29). DOUTA and DOUTB These are the nine-bit output data signals. Not all nine bits are valid in all configurations. As with DINA and DINB, high-order bits may not be used (Table 2-29). The output data on unused pins is undefined. Table 2-29 • Unused/Used Input and Output Data Pins for Various Supported Bus Widths DINx/DOUTx D×W 4k×1 2k×2 1k×4 512×9 Unused [8:1] [8:2] [8:4] None Used [0] [1:0] [3:0] [8:0] Note: The "x" in DINx and DOUTx implies A or B. 2- 62 R e visio n 2 Fusion Family of Mixed Signal FPGAs RAM512X18 Description RAM512X18 RADDR8 RADDR7 RADDR0 RD17 RD16 RD0 RW1 RW0 PIPE REN RCLK WADDR8 WADDR7 WADDR0 WD17 WD16 WD0 WW1 WW0 WEN WCLK RESET Figure 2-49 • RAM512X18 Revision 2 2- 63 Device Architecture RAM512X18 exhibits slightly different behavior from RAM4K9, as it has dedicated read and write ports. WW and RW These signals enable the RAM to be configured in one of the two allowable aspect ratios (Table 2-30). Table 2-30 • Aspect Ratio Settings for WW[1:0] WW[1:0] 01 10 00, 11 RW[1:0] 01 10 00, 11 D×W 512×9 256×18 Reserved WD and RD These are the input and output data signals, and they are 18 bits wide. When a 512×9 aspect ratio is used for write, WD[17:9] are unused and must be grounded. If this aspect ratio is used for read, then RD[17:9] are undefined. WADDR and RADDR These are read and write addresses, and they are nine bits wide. When the 256×18 aspect ratio is used for write or read, WADDR[8] or RADDR[8] are unused and must be grounded. WCLK and RCLK These signals are the write and read clocks, respectively. They are both active high. WEN and REN These signals are the write and read enables, respectively. They are both active low by default. These signals can be configured as active high. RESET This active low signal resets the output to zero, disables reads and/or writes from the SRAM block, and clears the data hold registers when asserted. It does not reset the contents of the memory. PIPE This signal is used to specify pipelined read on the output. A Low on PIPE indicates a nonpipelined read, and the data appears on the output in the same clock cycle. A High indicates a pipelined read, and data appears on the output in the next clock cycle. Clocking The dual-port SRAM blocks are only clocked on the rising edge. SmartGen allows falling-edge-triggered clocks by adding inverters to the netlist, hence achieving dual-port SRAM blocks that are clocked on either edge (rising or falling). For dual-port SRAM, each port can be clocked on either edge or by separate clocks, by port. Fusion devices support inversion (bubble pushing) throughout the FPGA architecture, including the clock input to the SRAM modules. Inversions added to the SRAM clock pin on the design schematic or in the HDL code will be automatically accounted for during design compile without incurring additional delay in the clock path. The two-port SRAM can be clocked on the rising edge or falling edge of WCLK and RCLK. If negative-edge RAM and FIFO clocking is selected for memory macros, clock edge inversion management (bubble pushing) is automatically used within the Fusion development tools, without performance penalty. 2- 64 R e visio n 2 Fusion Family of Mixed Signal FPGAs Modes of Operation There are two read modes and one write mode: • Read Nonpipelined (synchronous—1 clock edge): In the standard read mode, new data is driven onto the RD bus in the same clock cycle following RA and REN valid. The read address is registered on the read port clock active edge, and data appears at RD after the RAM access time. Setting PIPE to OFF enables this mode. Read Pipelined (synchronous—2 clock edges): The pipelined mode incurs an additional clock delay from the address to the data but enables operation at a much higher frequency. The read address is registered on the read port active clock edge, and the read data is registered and appears at RD after the second read clock edge. Setting PIPE to ON enables this mode. Write (synchronous—1 clock edge): On the write clock active edge, the write data is written into the SRAM at the write address when WEN is High. The setup times of the write address, write enables, and write data are minimal with respect to the write clock. Write and read transfers are described with timing requirements in the "SRAM Characteristics" section on page 2-66 and the "FIFO Characteristics" section on page 2-75. • • RAM Initialization Each SRAM block can be individually initialized on power-up by means of the JTAG port using the UJTAG mechanism (refer to the "JTAG IEEE 1532" section on page 2-230 and the Fusion SRAM/FIFO Blocks application note). The shift register for a target block can be selected and loaded with the proper bit configuration to enable serial loading. The 4,608 bits of data can be loaded in a single operation. Revision 2 2- 65 Device Architecture SRAM Characteristics Timing Waveforms tCYC tCKH CLK tAS [R|W]ADDR A0 tBKS BLK tENS WEN tCKQ1 DOUT|RD Dn D0 tDOH1 Figure 2-50 • RAM Read for Flow-Through Output. Applicable to both RAM4K9 and RAM512x18. tCKL tAH A1 A2 tBKH tENH D1 D2 tCYC tCKH CLK tAS [R|W]ADDR tBKS BLK tENS WEN tCKQ2 DOUT|RD Dn D0 tDOH2 Figure 2-51 • RAM Read for Pipelined Output. Applicable to both RAM4K9 and RAM512x18. tCKL tAH A0 A1 A2 tBKH tENH D1 2- 66 R e visio n 2 Fusion Family of Mixed Signal FPGAs tCYC tCKH CLK tAS [R|W]ADDR A0 tBKS BLK tENS WEN tDS DIN|WD DI0 tDH DI1 tENH tBKH tAH A1 A2 tCKL DOUT|RD Dn D2 Figure 2-52 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512x18. tCYC tCKH CLK tAS ADDR A0 tBKS BLK tENS WEN tDS DIN DOUT (flow-through) DOUT (pipelined) D0 tDH DI1 DI2 tBKH tAH A1 A2 tCKL Dn DI0 DI1 Dn DI0 DI1 Figure 2-53 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 Only. Revision 2 2- 67 Device Architecture CLK1 tAS ADDR1 tDS DIN1 tAH A0 tDH D0 tWRO CLK2 tAS ADDR2 A0 tCKQ1 Dn D0 tCKQ2 Dn D0 D1 A1 tAH A4 D2 D3 A2 A3 DOUT2 (flow-through) DOUT2 (Pipelined) Figure 2-54 • One Port Write / Other Port Read Same tCYC tCKH CLK tCKL RESET tRSTBQ DOUT|RD Dm Dn Figure 2-55 • RAM Reset. Applicable to both RAM4K9 and RAM512x18. 2- 68 R e visio n 2 Fusion Family of Mixed Signal FPGAs Timing Characteristics Table 2-31 • RAM4K9 Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tAS tAH tENS tENH tBKS tBKH tDS tDH tCKQ1 tCKQ2 tC2CWWH1 tC2CRWH1 tC2CWRH1 tRSTBQ tREMRSTB tRECRSTB tMPWRSTB tCYC FMAX Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for FlashBased cSoCs and FPGAs. 2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Description Address setup time Address hold time REN, WEN setup time REN, WEN hold time BLK setup time BL hold time Input data (DIN) setup time Input data (DIN) hold time Clock High to new data valid on DOUT (output retained, WMODE = 0) Clock High to new data valid on DOUT (flow-through, WMODE = 1) Clock High to new data valid on DOUT (pipelined) –2 –1 Std. 0.33 0.00 0.19 0.13 0.31 0.02 0.25 0.00 2.39 3.15 1.20 0.23 0.34 0.37 1.23 1.23 0.38 2.01 0.29 4.32 231 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MHz 0.25 0.28 0.00 0.00 0.14 0.16 0.10 0.11 0.23 0.27 0.02 0.02 0.18 0.21 0.00 0.00 1.79 2.03 2.36 2.68 0.89 1.02 Address collision clk-to-clk delay for reliable write after write on same 0.30 0.26 address—Applicable to Rising Edge Address collision clk-to-clk delay for reliable read access after write on 0.45 0.38 same address—Applicable to Opening Edge Address collision clk-to-clk delay for reliable write access after read on 0.49 0.42 same address— Applicable to Opening Edge RESET Low to data out Low on DOUT (flow-through) RESET Low to Data Out Low on DOUT (pipelined) RESET removal RESET recovery RESET minimum pulse width Clock cycle time Maximum frequency 0.92 1.05 0.92 1.05 0.29 0.33 1.50 1.71 0.21 0.24 3.23 3.68 310 272 Revision 2 2- 69 Device Architecture Table 2-32 • RAM512X18 Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tAS tAH tENS tENH tDS tDH tCKQ1 tCKQ2 tC2CRWH 1 Description Address setup time Address hold time REN, WEN setup time REN, WEN hold time Input data (WD) setup time Input data (WD) hold time Clock High to new data valid on RD (output retained) Clock High to new data valid on RD (pipelined) –2 –1 Std. 0.33 0.00 0.12 0.08 0.25 0.00 2.89 1.20 0.38 0.44 1.23 1.23 0.38 2.01 0.29 4.32 231 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MHz 0.25 0.28 0.00 0.00 0.09 0.10 0.06 0.07 0.18 0.21 0.00 0.00 2.16 2.46 0.90 1.02 Address collision clk-to-clk delay for reliable read access after write on 0.50 0.43 same address—Applicable to Opening Edge Address collision clk-to-clk delay for reliable write access after read on 0.59 0.50 same address— Applicable to Opening Edge RESET Low to data out Low on RD (flow-through) RESET Low to data out Low on RD (pipelined) 0.92 1.05 0.92 1.05 0.29 0.33 1.50 1.71 0.21 0.24 3.23 3.68 310 272 tC2CWRH1 tRSTBQ1 tREMRSTB tRECRSTB tMPWRSTB tCYC FMAX Notes: RESET removal RESET recovery RESET minimum pulse width Clock cycle time Maximum frequency 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for FlashBased cSoCs and FPGAs. 2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 70 R e visio n 2 Fusion Family of Mixed Signal FPGAs FIFO4K18 Description FIFO4K18 RW2 RW1 RW0 WW2 WW1 WW0 ESTOP FSTOP AEVAL11 AEVAL10 RD17 RD16 RD0 FULL AFULL EMPTY AEMPTY AEVAL0 AFVAL11 AFVAL10 AFVAL0 REN RBLK RCLK WD17 WD16 WD0 WEN WBLK WCLK RPIPE RESET Figure 2-56 • FIFO4KX18 Revision 2 2- 71 Device Architecture The following signals are used to configure the FIFO4K18 memory element: WW and RW These signals enable the FIFO to be configured in one of the five allowable aspect ratios (Table 2-33). Table 2-33 • Aspect Ratio Settings for WW[2:0] WW2, WW1, WW0 000 001 010 011 100 101, 110, 111 RW2, RW1, RW0 000 001 010 011 100 101, 110, 111 D×W 4k×1 2k×2 1k×4 512×9 256×18 Reserved WBLK and RBLK These signals are active low and will enable the respective ports when Low. When the RBLK signal is High, the corresponding port’s outputs hold the previous value. WEN and REN Read and write enables. WEN is active low and REN is active high by default. These signals can be configured as active high or low. WCLK and RCLK These are the clock signals for the synchronous read and write operations. These can be driven independently or with the same driver. RPIPE This signal is used to specify pipelined read on the output. A Low on RPIPE indicates a nonpipelined read, and the data appears on the output in the same clock cycle. A High indicates a pipelined read, and data appears on the output in the next clock cycle. RESET This active low signal resets the output to zero when asserted. It resets the FIFO counters. It also sets all the RD pins Low, the FULL and AFULL pins Low, and the EMPTY and AEMPTY pins High (Table 2-34). Table 2-34 • Input Data Signal Usage for Different Aspect Ratios D×W 4k×1 2k×2 1k×4 512×9 256×18 WD/RD Unused WD[17:1], RD[17:1] WD[17:2], RD[17:2] WD[17:4], RD[17:4] WD[17:9], RD[17:9] – WD This is the input data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. When a data width less than 18 is specified, unused higher-order signals must be grounded (Table 2-34). RD This is the output data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. Like the WD bus, high-order bits become unusable if the data width is less than 18. The output data on unused pins is undefined (Table 2-34). ESTOP, FSTOP ESTOP is used to stop the FIFO read counter from further counting once the FIFO is empty (i.e., the EMPTY flag goes High). A High on this signal inhibits the counting. 2- 72 R e visio n 2 Fusion Family of Mixed Signal FPGAs FSTOP is used to stop the FIFO write counter from further counting once the FIFO is full (i.e., the FULL flag goes High). A High on this signal inhibits the counting. For more information on these signals, refer to the "ESTOP and FSTOP Usage" section on page 2-73. FULL, EMPTY When the FIFO is full and no more data can be written, the FULL flag asserts High. The FULL flag is synchronous to WCLK to inhibit writing immediately upon detection of a full condition and to prevent overflows. Since the write address is compared to a resynchronized (and thus time-delayed) version of the read address, the FULL flag will remain asserted until two WCLK active edges after a read operation eliminates the full condition. When the FIFO is empty and no more data can be read, the EMPTY flag asserts High. The EMPTY flag is synchronous to RCLK to inhibit reading immediately upon detection of an empty condition and to prevent underflows. Since the read address is compared to a resynchronized (and thus time-delayed) version of the write address, the EMPTY flag will remain asserted until two RCLK active edges after a write operation removes the empty condition. For more information on these signals, refer to the "FIFO Flag Usage Considerations" section on page 2-74. AFULL, AEMPTY These are programmable flags and will be asserted on the threshold specified by AFVAL and AEVAL, respectively. When the number of words stored in the FIFO reaches the amount specified by AEVAL while reading, the AEMPTY output will go High. Likewise, when the number of words stored in the FIFO reaches the amount specified by AFVAL while writing, the AFULL output will go High. AFVAL, AEVAL The AEVAL and AFVAL pins are used to specify the almost-empty and almost-full threshold values, respectively. They are 12-bit signals. For more information on these signals, refer to "FIFO Flag Usage Considerations" section. ESTOP and FSTOP Usage The ESTOP pin is used to stop the read counter from counting any further once the FIFO is empty (i.e., the EMPTY flag goes High). Likewise, the FSTOP pin is used to stop the write counter from counting any further once the FIFO is full (i.e., the FULL flag goes High). The FIFO counters in the Fusion device start the count at 0, reach the maximum depth for the configuration (e.g., 511 for a 512×9 configuration), and then restart at 0. An example application for the ESTOP, where the read counter keeps counting, would be writing to the FIFO once and reading the same content over and over without doing another write. Revision 2 2- 73 Device Architecture FIFO Flag Usage Considerations The AEVAL and AFVAL pins are used to specify the 12-bit AEMPTY and AFULL threshold values, respectively. The FIFO contains separate 12-bit write address (WADDR) and read address (RADDR) counters. WADDR is incremented every time a write operation is performed, and RADDR is incremented every time a read operation is performed. Whenever the difference between WADDR and RADDR is greater than or equal to AFVAL, the AFULL output is asserted. Likewise, whenever the difference between WADDR and RADDR is less than or equal to AEVAL, the AEMPTY output is asserted. To handle different read and write aspect ratios, AFVAL and AEVAL are expressed in terms of total data bits instead of total data words. When users specify AFVAL and AEVAL in terms of read or write words, the SmartGen tool translates them into bit addresses and configures these signals automatically. SmartGen configures the AFULL flag to assert when the write address exceeds the read address by at least a predefined value. In a 2k×8 FIFO, for example, a value of 1,500 for AFVAL means that the AFULL flag will be asserted after a write when the difference between the write address and the read address reaches 1,500 (there have been at least 1500 more writes than reads). It will stay asserted until the difference between the write and read addresses drops below 1,500. The AEMPTY flag is asserted when the difference between the write address and the read address is less than a predefined value. In the example above, a value of 200 for AEVAL means that the AEMPTY flag will be asserted when a read causes the difference between the write address and the read address to drop to 200. It will stay asserted until that difference rises above 200. Note that the FIFO can be configured with different read and write widths; in this case, the AFVAL setting is based on the number of write data entries and the AEVAL setting is based on the number of read data entries. For aspect ratios of 512×9 and 256×18, only 4,096 bits can be addressed by the 12 bits of AFVAL and AEVAL. The number of words must be multiplied by 8 and 16, instead of 9 and 18. The SmartGen tool automatically uses the proper values. To avoid halfwords being written or read, which could happen if different read and write aspect ratios are specified, the FIFO will assert FULL or EMPTY as soon as at least a minimum of one word cannot be written or read. For example, if a two-bit word is written and a four-bit word is being read, the FIFO will remain in the empty state when the first word is written. This occurs even if the FIFO is not completely empty, because in this case, a complete word cannot be read. The same is applicable in the full state. If a four-bit word is written and a two-bit word is read, the FIFO is full and one word is read. The FULL flag will remain asserted because a complete word cannot be written at this point. 2- 74 R e visio n 2 Fusion Family of Mixed Signal FPGAs FIFO Characteristics Timing Waveforms RCLK/ WCLK tMPWRSTB RESET tRSTFG EF tRSTAF AEF tRSTFG FF tRSTAF AFF WA/RA (Address Counter) Figure 2-57 • FIFO Reset tRSTCK MATCH (A0) tCYC RCLK tRCKEF EF tCKAF AEF WA/RA (Address Counter) NO MATCH NO MATCH Dist = AEF_TH MATCH (EMPTY) Figure 2-58 • FIFO EMPTY Flag and AEMPTY Flag Assertion Revision 2 2- 75 Device Architecture t CYC WCLK t WCKFF FF t CKAF AFF WA/RA (Address Counter) NO MATCH NO MATCH Dist = AFF_TH MATCH (FULL) Figure 2-59 • FIFO FULL and AFULL Flag Assertion WCLK WA/RA MATCH (Address Counter) (EMPTY) 1st rising edge after 1st write NO MATCH NO MATCH 2nd rising edge after 1st write tRCKEF NO MATCH NO MATCH Dist = AEF_TH + 1 RCLK EF tCKAF AEF Figure 2-60 • FIFO EMPTY Flag and AEMPTY Flag Deassertion RCLK WA/RA (Address Counter) MATCH (FULL) NO MATCH NO MATCH 1st Rising Edge After 2nd Read tWCKF NO MATCH NO MATCH Dist = AFF_TH – 1 1st Rising Edge After 1st Read WCLK FF tCKAF AFF Figure 2-61 • FIFO FULL Flag and AFULL Flag Deassertion 2- 76 R e visio n 2 Fusion Family of Mixed Signal FPGAs Timing Characteristics Table 2-35 • FIFO Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tENS tENH tBKS tBKH tDS tDH tCKQ1 tCKQ2 tRCKEF tWCKFF tCKAF tRSTFG tRSTAF tRSTBQ tREMRSTB tRECRSTB tMPWRSTB tCYC FMAX Description REN, WEN Setup time REN, WEN Hold time BLK Setup time BLK Hold time Input data (WD) Setup time Input data (WD) Hold time Clock High to New Data Valid on RD (flow-through) Clock High to New Data Valid on RD (pipelined) RCLK High to Empty Flag Valid WCLK High to Full Flag Valid Clock High to Almost Empty/Full Flag Valid RESET Low to Empty/Full Flag Valid RESET Low to Almost-Empty/Full Flag Valid RESET Low to Data out Low on RD (flow-through) RESET Low to Data out Low on RD (pipelined) RESET Removal RESET Recovery RESET Minimum Pulse Width Clock Cycle time Maximum Frequency for FIFO –2 1.34 0.00 0.19 0.00 0.18 0.00 2.17 0.94 1.72 1.63 6.19 1.69 6.13 0.92 0.92 0.29 1.50 0.21 3.23 310 –1 1.52 0.00 0.22 0.00 0.21 0.00 2.47 1.07 1.96 1.86 7.05 1.93 6.98 1.05 1.05 0.33 1.71 0.24 3.68 272 Std. 1.79 0.00 0.26 0.00 0.25 0.00 2.90 1.26 2.30 2.18 8.29 2.27 8.20 1.23 1.23 0.38 2.01 0.29 4.32 231 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 77 Device Architecture Analog Block With the Fusion family, Microsemi has introduced the world's first mixed-mode FPGA solution. Supporting a robust analog peripheral mix, Fusion devices will support a wide variety of applications. It is this Analog Block that separates Fusion from all other FPGA solutions on the market today. By combining both flash and high-speed CMOS processes in a single chip, these devices offer the best of both worlds. The high-performance CMOS is used for building RAM resources. These highperformance structures support device operation up to 350 MHz. Additionally, the advanced Microsemi 0.13 µm flash process incorporates high-voltage transistors and a high-isolation, triple-well process. Both of these are suited for the flash-based programmable logic and nonvolatile memory structures. High-voltage transistors support the integration of analog technology in several ways. They aid in noise immunity so that the analog portions of the chip can be better isolated from the digital portions, increasing analog accuracy. Because they support high voltages, Microsemi flash FPGAs can be connected directly to high-voltage input signals, eliminating the need for external resistor divider networks, reducing component count, and increasing accuracy. By supporting higher internal voltages, the Microsemi advanced flash process enables high dynamic range on analog circuitry, increasing precision and signal–noise ratio. Microsemi flash FPGAs also drive high-voltage outputs, eliminating the need for external level shifters and drivers. The unique triple-well process enables the integration of high-performance analog features with increased noise immunity and better isolation. By increasing the efficiency of analog design, the triplewell process also enables a smaller overall design size, reducing die size and cost. The Analog Block consists of the Analog Quad I/O structure, RTC (for details refer to the "Real-Time Counter System" section on page 2-33), ADC, and ACM. All of these elements are combined in the single Analog Block macro, with which the user implements this functionality (Figure 2-62). The Analog Block needs to be reset/reinitialized after the core powers up or the device is programmed. An external reset/initialize signal, which can come from the internal voltage regulator when it powers up, must be applied. 2- 78 R e visio n 2 Fusion Family of Mixed Signal FPGAs VAREF ADCGNDREF AV0 AC0 AT0 AV9 AC9 AT9 ATRETURN01 ATRETURN9 DENAV0 DENAC0 DENAT0 DENAV0 DENAC0 DENAT0 CMSTB0 CSMTB9 GDON0 GDON9 TMSTB0 TMSTB9 MODE[3:0] TVC[7:0] STC[7:0] CHNUMBER[4:0] TMSTINT ADCSTART VAREFSEL PWRDWN ADCRESET RTCCLK SYSCLK ACMWEN ACMRESET ACMWDATA ACMADDR ACMCLK AB DAVOUT0 DACOUT0 DATOUT0 DAVOUT9 DACOUT9 DATOUT9 AG0 AG1 AG9 BUSY CALIBRATE DATAVALID SAMPLE RESULT[11:0] RTCMATCH RTCXTLMODE RTCXTLSEL RTCPSMMATCH ACMRDATA[7:0] Figure 2-62 • Analog Block Macro Revision 2 2- 79 Device Architecture Table 2-36 describes each pin in the Analog Block. Each function within the Analog Block will be explained in detail in the following sections. Table 2-36 • Analog Block Pin Description Signal Name VAREF ADCGNDREF MODE[3:0] SYSCLK TVC[7:0] STC[7:0] ADCSTART PWRDWN Number of Bits 1 1 4 1 8 8 1 1 Direction Input Input Input Input Input Input Input Function External ground reference ADC operating mode External system clock Clock divide control Sample time control Start of conversion ADC comparator power-down if 1. When asserted, the ADC will stop functioning, and the digital portion of the analog block will continue operating. This may result in invalid status flags from the analog block. Therefore, Microsemi does not recommend asserting the PWRDWN pin. ADC resets and disables Analog Quad – active high 1 – Running conversion 1 – Power-up calibration 1 – Valid conversion result Conversion result Internal temp. monitor strobe 1 – An analog signal is actively being sampled (stays high during signal acquisition only) 0 – No analog signal is being sampled VAREFSEL 1 Input 0 = Output internal voltage reference (2.56 V) to VAREF 1 = Input external voltage reference from VAREF and ADCGNDREF CHNUMBER[4:0] ACMCLK ACMWEN ACMRESET ACMWDATA[7:0] ACMRDATA[7:0] ACMADDR[7:0] CMSTB0 to CMSTB9 5 1 1 1 8 8 8 10 Input Input Input Input Input Output Input Input Analog input channel select ACM clock ACM write enable – active high ACM reset – active low ACM write data ACM read data ACM address Input multiplexer ACM ACM ACM ACM ACM ACM ADC ADC ADC ADC ADC Location of Details ADC ADC ADC Input/Output Voltage reference for ADC ADCRESET BUSY CALIBRATE DATAVALID RESULT[11:0] TMSTBINT SAMPLE 1 1 1 1 12 1 1 Input Output Output Output Output Input Output ADC ADC ADC ADC ADC ADC ADC Current monitor strobe – 1 per quad, Analog Quad active high 2- 80 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-36 • Analog Block Pin Description (continued) Signal Name GDON0 to GDON9 TMSTB0 to TMSTB9 DAVOUT0, DACOUT0, DATOUT0 to DAVOUT9, DACOUT9, DATOUT9 DENAV0, DENAC0, DENAT0 to DENAV9, DENAC9, DENAT9 AV0 AC0 AG0 AT0 ATRETURN01 AV1 AC1 AG1 AT1 AV2 AC2 AG2 AT2 ATRETURN23 AV3 AC3 AG3 AT3 AV4 AC4 AG4 AT4 ATRETURN45 AV5 AC5 AG5 AT5 AV6 AC6 Number of Bits 10 10 30 Direction Input Input Output Function Control to power MOS – 1 per quad Location of Details Analog Quad Temperature monitor strobe – 1 per Analog Quad quad; active high Digital outputs – 3 per quad Analog Quad 30 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Input Input Input Output Input Input Input Input Output Input Input Input Output Input Input Input Input Output Input Input Input Output Input Input Input Input Output Input Input Input Digital input enables – 3 per quad Analog Quad 0 Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Temperature monitor return shared by Analog Quad Analog Quads 0 and 1 Analog Quad 1 Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad 2 Analog Quad Analog Quad Analog Quad Analog Quad Temperature monitor return shared by Analog Quad Analog Quads 2 and 3 Analog Quad 3 Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad 4 Analog Quad Analog Quad Analog Quad Analog Quad Temperature monitor return shared by Analog Quad Analog Quads 4 and 5 Analog Quad 5 Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad 6 Analog Quad Analog Quad Revision 2 2- 81 Device Architecture Table 2-36 • Analog Block Pin Description (continued) Signal Name AG6 AT6 ATRETURN67 AV7 AC7 AG7 AT7 AV8 AC8 AG8 AT8 ATRETURN89 AV9 AC9 AG9 AT9 RTCMATCH RTCPSMMATCH RTCXTLMODE[1:0] RTCXTLSEL RTCCLK Number of Bits 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 1 1 Direction Output Input Input Input Input Output Input Input Input Output Input Input Input Input Output Input Output Output Output Output Input MATCH MATCH connected to VRPSM Drives XTLOSC RTCMODE[1:0] pins Drives XTLOSC MODESEL pin RTC clock input Analog Quad 8 Function Location of Details Analog Quad Analog Quad Temperature monitor return shared by Analog Quad Analog Quads 6 and 7 Analog Quad 7 Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Temperature monitor return shared by Analog Quad Analog Quads 8 and 9 Analog Quad 9 Analog Quad Analog Quad Analog Quad Analog Quad RTC RTC RTC RTC RTC Analog Quad With the Fusion family, Microsemi introduces the Analog Quad, shown in Figure 2-63 on page 2-83, as the basic analog I/O structure. The Analog Quad is a four-channel system used to precondition a set of analog signals before sending it to the ADC for conversion into a digital signal. To maximize the usefulness of the Analog Quad, the analog input signals can also be configured as LVTTL digital input signals. The Analog Quad is divided into four sections. The first section is called the Voltage Monitor Block, and its input pin is named AV. It contains a twochannel analog multiplexer that allows an incoming analog signal to be routed directly to the ADC or allows the signal to be routed to a prescaler circuit before being sent to the ADC. The prescaler can be configured to accept analog signals between –12 V and 0 or between 0 and +12 V. The prescaler circuit scales the voltage applied to the ADC input pad such that it is compatible with the ADC input voltage range. The AV pin can also be used as a digital input pin. The second section of the Analog Quad is called the Current Monitor Block. Its input pin is named AC. The Current Monitor Block contains all the same functions as the Voltage Monitor Block with one addition, which is a current monitoring function. A small external current sensing resistor (typically less than 1 Ω) is connected between the AV and AC pins and is in series with a power source. The Current Monitor Block contains a current monitor circuit that converts the current through the external resistor to a voltage that can then be read using the ADC. 2- 82 R e visio n 2 Fusion Family of Mixed Signal FPGAs The third part of the Analog Quad is called the Gate Driver Block, and its output pin is named AG. This section is used to drive an external FET. There are two modes available: a High Current Drive mode and a Current Source Control mode. Both negative and positive voltage polarities are available, and in the current source control mode, four different current levels are available. The fourth section of the Analog Quad is called the Temperature Monitor Block, and its input pin name is AT. This block is similar to the Voltage Monitor Block, except that it has an additional function: it can be used to monitor the temperature of an external diode-connected transistor. It has a modified prescaler and is limited to positive voltages only. The Analog Quad can be configured during design time by Libero IDE; however, the ACM can be used to change the parameters of any of these I/Os during runtime. This type of change is referred to as a context switch. The Analog Quad is a modular structure that is replicated to generate the analog I/O resources. Each Fusion device supports between 5 and 10 Analog Quads. The analog pads are numbered to clearly identify both the type of pad (voltage, current, gate driver, or temperature pad) and its corresponding Analog Quad (AV0, AC0, AG0, AT0, AV1, …, AC9, AG9, and AT9). There are three types of input pads (AVx, ACx, and ATx) and one type of analog output pad (AGx). Since there can be up to 10 Analog Quads on a device, there can be a maximum of 30 analog input pads and 10 analog output pads. Off-Chip AV Pads Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor/Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-63 • Analog Quad Revision 2 2- 83 Device Architecture Voltage Monitor The Fusion Analog Quad offers a robust set of voltage-monitoring capabilities unique in the FPGA industry. The Analog Quad comprises three analog input pads— Analog Voltage (AV), Analog Current (AC), and Analog Temperature (AT)—and a single gate driver output pad, Analog Gate (AG). There are many common characteristics among the analog input pads. Each analog input can be configured to connect directly to the input MUX of the ADC. When configured in this manner (Figure 2-64), there will be no prescaling of the input signal. Care must be taken in this mode not to drive the ADC into saturation by applying an input voltage greater than the reference voltage. The internal reference voltage of the ADC is 2.56 V. Optionally, an external reference can be supplied by the user. The external reference can be a maximum of 3.3 V DC. Off-Chip AV Pads Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-64 • Analog Quad Direct Connect 2- 84 R e visio n 2 Fusion Family of Mixed Signal FPGAs The Analog Quad offers a wide variety of prescaling options to enable the ADC to resolve the input signals. Figure 2-65 shows the path through the Analog Quad for a signal that is to be prescaled prior to conversion. The ADC internal reference voltage and the prescaler factors were selected to make both prescaling and postscaling of the signals easy binary calculations (refer to Table 2-57 on page 2-132 for details). When an analog input pad is configured with a prescaler, there will be a 1 MΩ resistor to ground. This occurs even when the device is in power-down mode. In low power standby or sleep mode (VCC is OFF, VCC33A is ON, VCCI is ON) or when the resource is not used, analog inputs are pulled down to ground through a 1 MΩ resistor. The gate driver output is floating (or tristated), and there is no extra current on VCC33A. These scaling factors hold true whether the particular pad is configured to accept a positive or negative voltage. Note that whereas the AV and AC pads support the same prescaling factors, the AT pad supports a reduced set of prescaling factors and supports positive voltages only. Typical scaling factors are given in Table 2-57 on page 2-132, and the gain error (which contributes to the minimum and maximum) is in Table 2-49 on page 2-119. Off-Chip AV Pads Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-65 • Analog Quad Prescaler Input Configuration Revision 2 2- 85 Device Architecture Terminology BW – Bandwidth BW is a range of frequencies that a Channel can handle. Channel A channel is define as an analog input configured as one of the Prescaler range shown in Table 2-57 on page 2-132. The channel includes the Prescaler circuit and the ADC. Channel Gain Channel Gain is a measured of the deviation of the actual slope from the ideal slope. The slope is measured from the 20% and 80% point. Gain actual Gain = -----------------------Gain ideal EQ 1 Channel Gain Error Channel Gain Error is a deviation from the ideal slope of the transfer function. The Prescaler Gain Error is expressed as the percent difference between the actual and ideal, as shown in EQ 2. Error Gain = (1-Gain) × 100% EQ 2 Channel Input Offset Error Channel Offset error is measured as the input voltage that causes the transition from zero to a count of one. An Ideal Prescaler will have offset equal to ½ of LSB voltage. Offset error is a positive or negative when the first transition point is higher or lower than ideal. Offset error is expressed in LSB or input voltage. Total Channel Error Total Channel Error is defined as the total error measured compared to the ideal value. Total Channel Error is the sum of gain error and offset error combined. Figure 2-66 shows how Total Channel Error is measured. Total Channel Error is defined as the difference between the actual ADC output and ideal ADC output. In the example shown in Figure 2-66, the Total Channel Error would be a negative number. ADC Output Code pu t al O C hannel G ain Actual Output Id e Channel Input Offset Error Input Voltage to Prescaler Figure 2-66 • Total Channel Error Example 2- 86 R e visio n 2 ut T otal C hannel Er r or } Fusion Family of Mixed Signal FPGAs Direct Digital Input The AV, AC, and AT pads can also be configured as high-voltage digital inputs (Figure 2-67). As these pads are 12 V–tolerant, the digital input can also be up to 12 V. However, the frequency at which these pads can operate is limited to 10 MHz. To enable one of these analog input pads to operate as a digital input, its corresponding Digital Input Enable (DENAxy) pin on the Analog Block must be pulled High, where x is either V, C, or T (for AV, AC, or AT pads, respectively) and y is in the range 0 to 9, corresponding to the appropriate Analog Quad. When the pad is configured as a digital input, the signal will come out of the Analog Block macro on the appropriate DAxOUTy pin, where x represents the pad type (V for AV pad, C for AC pad, or T for AT pad) and y represents the appropriate Analog Quad number. Example: If the AT pad in Analog Quad 5 is configured as a digital input, it will come out on the DATOUT5 pin of the Analog Block macro. Off-Chip AV Pads Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-67 • Analog Quad Direct Digital Input Configuration Revision 2 2- 87 Device Architecture Current Monitor The Fusion Analog Quad is an excellent element for voltage- and current-monitoring applications. In addition to supporting the same functionality offered by the AV pad, the AC pad can be configured to monitor current across an external sense resistor (Figure 2-68). To support this current monitor function, a differential amplifier with 10x gain passes the amplified voltage drop between the AV and AC pads to the ADC. The amplifier enables the user to use very small resistor values, thereby limiting any impact on the circuit. This function of the AC pad does not limit AV pad operation. The AV pad can still be configured for use as a direct voltage input or scaled through the AV prescaler independently of it’s use as an input to the AC pad’s differential amplifier. Power Off-Chip AV Pads Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-68 • Analog Quad Current Monitor Configuration 2- 88 R e visio n 2 Fusion Family of Mixed Signal FPGAs To initiate a current measurement, the appropriate Current Monitor Strobe (CMSTB) signal on the AB macro must be asserted low for at least tCMSLO in order to discharge the previous measurement. Then CMSTB must be asserted high for at least tCMSET prior to asserting the ADCSTART signal. The CMSTB must remain high until after the SAMPLE signal is de-asserted by the AB macro. Note that the minimum sample time cannot be less than tCMSHI. Figure 2-69 shows the timing diagram of CMSTB in relationship with the ADC control signals. tCMSHI C MSTBx tCMSLO VADC tCMSET ADCSTART can be asserted after this point to start ADC sampling. ADCSTART Figure 2-69 • Timing Diagram for Current Monitor Strobe Figure 2-70 illustrates positive current monitor operation. The differential voltage between AV and AC goes into the 10× amplifier and is then converted by the ADC. For example, a current of 1.5 A is drawn from a 10 V supply and is measured by the voltage drop across a 0.050 Ω sense resistor, The voltage drop is amplified by ten times by the amplifier and then measured by the ADC. The 1.5 A current creates a differential voltage across the sense resistor of 75 mV. This becomes 750 mV after amplification. Thus, the ADC measures a current of 1.5 A as 750 mV. Using an ADC with 8-bit resolution and VAREF of 2.56 V, the ADC result is decimal 75. EQ 3 shows how to compute the current from the ADC result. I = ( ADC × V AREF ) ⁄ ( 10 × 2 × R sense ) EQ 3 where I is the current flowing through the sense resistor ADC is the result from the ADC VAREF is the Reference voltage N is the number of bits Rsense is the resistance of the sense resistor N Revision 2 2- 89 Device Architecture 0-12 V RSENSE ACx I AVx CMSTBx 10 X VADC to Analog MUX (refer Table 2-36 for MUX channel number) Current Monitor Figure 2-70 • Positive Current Monitor Care must be taken when choosing the right resistor for current measurement application. Note that because of the 10× amplification, the maximum measurable difference between the AV and AC pads is VAREF / 10. A larger AV-to-AC voltage drop will result in ADC saturation; that is, the digital code put out by the ADC will stay fixed at the full scale value. Therefore, the user must select the external sense resistor appropriately. Table 2-38 shows recommended resistor values for different current measurement ranges. When choosing resistor values for a system, there is a trade-off between measurement accuracy and power consumption. Choosing a large resistor will increase the voltage drop and hence increase accuracy of the measurement; however the larger voltage drop dissipates more power (P = I2 × R). The Current Monitor is a unipolar system, meaning that the differential voltage swing must be from 0 V to VAREF /10. Therefore, the Current Monitor only supports differential voltage where |VAV-VAC| is greater than 0 V. This results in the requirement that the potential of the AV pad must be larger than the potential of the AC pad. This is straightforward for positive voltage systems. For a negative voltage system, it means that the AV pad must be "more negative" than the AC pad. This is shown in Figure 2-71. In this case, both the AV pad and the AC pad are configured for negative operations and the output of the differential amplifier still falls between 0 V and VAREF as required. 2- 90 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-37 • Recommended Resistor for Different Current Range Measurement Current Range > 5 mA – 10 mA > 10 mA – 20 mA > 20 mA – 50 mA > 50 mA – 100 mA > 100 mA – 200 mA > 200 mA – 500 mA > 500 mA – 1 A >1A–2A >2A–4A >4A–8A > 8 A – 12 A Recommended Minimum Resistor Value (Ohms) 10 – 20 5 – 10 2.5 – 5 1–2 0.5 – 1 0.3 – 0.5 0.1 – 0.2 0.05 – 0.1 0.025 – 0.05 0.0125 – 0.025 0.00625 – 0.02 0 to –10.5 V AVx RSENSE ACx I CMSTBx 10 X VADC to Analog MUX (see Table 2-36 for MUXchannel number) Current Monitor Figure 2-71 • Negative Current Monitor Terminology Accuracy The accuracy of Fusion Current Monitor is ±2 mV minimum plus 5% of the differential voltage at the input. The input accuracy can be translated to error at the ADC output by using EQ 4. The 10 V/V gain is the gain of the Current Monitor Circuit, as described in the "Current Monitor" section on page 2-88. For 8bit mode, N = 8, VAREF= 2.56 V, zero differential voltage between AV and AC, the Error (EADC) is equal to 2 LSBs. 2E ADC = ( 2 mV + 0.05 V AV – V AC ) × ( 10 V ) ⁄ V × ---------------V AREF EQ 4 where N is the number of bits VAREF is the Reference voltage VAV is the voltage at AV pad VAC is the voltage at AC pad N Revision 2 2- 91 Device Architecture Gate Driver The Fusion Analog Quad includes a Gate Driver connected to the Quad's AG pin (Figure 2-72). Designed to work with external p- or n-channel MOSFETs, the Gate driver is a configurable current sink or source and requires an external pull-up or pull-down resistor. The AG supports 4 selectable gate drive levels: 1 µA, 3 µA, 10 µA, and 30 µA (Figure 2-73 on page 2-93). The AG also supports a High Current Drive mode in which it can sink 20 mA; in this mode the switching rate is approximately 1.3 MHz with 100 ns turn-on time and 600 ns turn-off time. Modeled on an open-drain-style output, it does not output a voltage level without an appropriate pull-up or pull-down resistor. If 1 V is forced on the drain, the current sinking/sourcing will exceed the ability of the transistor, and the device could be damaged. The AG pad is turned on via the corresponding GDONx pin in the Analog Block macro, where x is the number of the corresponding Analog Quad for the AG pad to be enabled (GDON0 to GDON9). Power Line Side Load Side Off-Chip AV Pads Voltage Monitor Block AC Rpullup AG Current Monitor Block Gate Driver AT Temperature Monitor Block On-Chip Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-72 • Gate Driver The gate-to-source voltage (Vgs) of the external MOSFET is limited to the programmable drive current times the external pull-up or pull-down resistor value (EQ 5). Vgs ≤ Ig × (Rpullup or Rpulldown) EQ 5 The rate at which the gate voltage of the external MOSFET slews is determined by the current, Ig, sourced or sunk by the AG pin and the gate-to-source capacitance, CGS, of the external MOSFET. As an approximation, the slew rate is given by EQ 6. dv/dt = Ig / CGS EQ 6 2- 92 R e visio n 2 Fusion Family of Mixed Signal FPGAs CGS is not a fixed capacitance but, depending on the circuitry connected to its drain terminal, can vary significantly during the course of a turn-on or turn-off transient. Thus, EQ 6 on page 2-92 can only be used for a first-order estimate of the switching speed of the external MOSFET. High Current 1 μA 3 μA 10 μA 30 μA AG High Current 1 μA 3 μA 10 μA 30 μA Figure 2-73 • Gate Driver Example Revision 2 2- 93 Device Architecture Temperature Monitor The final pin in the Analog Quad is the Analog Temperature (AT) pin. The AT pin is used to implement an accurate temperature monitor in conjunction with an external diode-connected bipolar transistor (Figure 2-74). For improved temperature measurement accuracy, it is important to use the ATRTN pin for the return path of the current sourced by the AT pin. Each ATRTN pin is shared between two adjacent Analog Quads. Additionally, if not used for temperature monitoring, the AT pin can provide functionality similar to that of the AV pad. However, in this mode only positive voltages can be applied to the AT pin, and only two prescaler factors are available (16 V and 4 V ranges—refer to Table 2-57 on page 2-132). Discrete Bipolar Transistor Off-Chip AV Pads On-Chip Voltage Monitor Block AC Current Monitor Block AG Gate Driver AT ATRTN Temperature Monitor Block Analog Quad Prescaler Prescaler Prescaler Digital Input Digital Input Current Monitor / Instr Amplifier Power MOSFET Gate Driver Digital Input Temperature Monitor To FPGA (DAVOUTx) To Analog MUX To FPGA (DACOUTx) From FPGA (GDONx) To FPGA (DATOUTx) To Analog MUX To Analog MUX Figure 2-74 • Temperature Monitor Quad 2- 94 R e visio n 2 Fusion Family of Mixed Signal FPGAs Fusion uses a remote diode as a temperature sensor. The Fusion Temperature Monitor uses a differential input; the AT pin and ATRTN (AT Return) pin are the differential inputs to the Temperature Monitor. There is one Temperature Monitor in each Quad. A simplified block diagram is shown in Figure 2-75. VDD33A 10 μA 100 μA TMSTBx + ATx + ∆V VADC 12.5 X – – ATRTNxy to Analog MUX (refer Table 2-36 for MUX Channel Number) Figure 2-75 • Block Diagram for Temperature Monitor Circuit The Fusion approach to measuring temperature is forcing two different currents through the diode with a ratio of 10:1. The switch that controls the different currents is controlled by the Temperature Monitor Strobe signal, TMSTB. Setting TMSTB to '1' will initiate a Temperature reading. The TMSTB should remain '1' until the ADC finishes sampling the voltage from the Temperature Monitor. The minimum sample time for the Temperature Monitor cannot be less than the minimum strobe high time minus the setup time. Figure 2-76 shows the timing diagram. tTMSHI TMSTBx tTMSLO VADC tTMSSET ADC should start sampling at this point ADCSTART Figure 2-76 • Timing Diagram for the Temperature Monitor Strobe Signal Note: When the IEEE 1149.1 Boundary Scan EXTEST instruction is executed, the AG pad drive strength ceases and becomes a 1 µA sink into the Fusion device. Revision 2 2- 95 Device Architecture The diode’s voltage is measured at each current level and the temperature is calculated based on EQ 7. kT I TMSLO V TMSLO – V TMSHI = n ------ ⎛ ln -----------------⎞ q ⎝ I TMSHI ⎠ EQ 7 where ITMSLO is the current when the Temperature Strobe is Low, typically 100 µA ITMSHI is the current when the Temperature Strobe is High, typically 10 µA VTMSLO is diode voltage while Temperature Strobe is Low VTMSHI is diode voltage while Temperature Strobe is High n is the non-ideality factor of the diode-connected transistor. It is typically 1.004 for the Microsemirecommended transistor type 2N3904. K = 1.3806 x 10-23 J/K is the Boltzman constant Q = 1.602 x 10-19 C is the charge of a proton When ITMSLO / ITMSHI = 10, the equation can be simplified as shown in EQ 8. Δ V = V TMSLO – V TMSHI = 1.986 × 10 nT EQ 8 In the Fusion TMB, the ideality factor n for 2N3904 is 1.004 and ΔV is amplified 12.5 times by an internal amplifier; hence the voltage before entering the ADC is as given in EQ 9. V ADC = Δ V × 12.5 = 2.5 mV ⁄ ( K × T ) EQ 9 This means the temperature to voltage relationship is 2.5 mV per degree Kelvin. The unique design of Fusion has made the Temperature Monitor System simple for the user. When the 10-bit mode ADC is used, each LSB represents 1 degree Kelvin, as shown in EQ 10. That is, e. 25°C is equal to 293°K and is represented by decimal 293 counts from the ADC. 21 K = 2.5 mV × ---------------- = 1 LSB 2.56 V EQ 10 If 8-bit mode is used for the ADC resolution, each LSB represents 4 degrees Kelvin; however, the resolution remains as 1 degree Kelvin per LSB, even for 12-bit mode, due to the Temperature Monitor design. An example of the temperature data format for 10-bit mode is shown in Table 2-38. Table 2-38 • Temperature Data Format Temperature –40°C –20°C 0°C 1°C 10 °C 25°C 50 °C 85 °C Temperature (K) 233 253 273 274 283 298 323 358 Digital Output (ADC 10-bit mode) 00 1110 1001 00 1111 1101 01 0001 0001 01 0001 0010 01 0001 1011 01 0010 1010 01 0100 0011 01 0110 0110 10 –4 2- 96 R e visio n 2 Fusion Family of Mixed Signal FPGAs Terminology Resolution Resolution defines the smallest temperature change Fusion Temperature Monitor can resolve. For ADC configured as 8-bit mode, each LSB represents 4°C, and 1°C per LSB for 10-bit mode. With 12-bit mode, the Temperature Monitor can still only resolve 1°C due to Temperature Monitor design. Offset The Fusion Temperature Monitor has a systematic offset of +5°C, excluding error due board resistance and ideality factor of the external diode, between the operation range of –40°C to +85°C. For instance, 25°C will be read by the Temperature Monitor as 30°C plus error. The user can remove any offset error through hardware or software during the calibration routine. The Fusion Temperature Monitor has a systematic offset (Table 2-49 on page 2-119), excluding error due to board resistance and ideality factor of the external diode. Microsemi provides an IP block (CalibIP) that is required in order to mitigate the systematic temperature offset. For further details on CalibIP, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User's Guide. Revision 2 2- 97 Device Architecture Analog-to-Digital Converter Block At the heart of the Fusion analog system is a programmable Successive Approximation Register (SAR) ADC. The ADC can support 8-, 10-, or 12-bit modes of operation. In 12-bit mode, the ADC can resolve 500 ksps. All results are MSB-justified in the ADC. The input to the ADC is a large 32:1 analog input multiplexer. A simplified block diagram of the Analog Quads, analog input multiplexer, and ADC is shown in Figure 2-77. The ADC offers multiple self-calibrating modes to ensure consistent high performance both at power-up and during runtime. VCC (1.5 V) AV0 AC0 AG0 AT0 ATRETURN01 AV1 AC1 AG1 AT1 AV2 AC2 AG2 AT2 ATRETURN23 AV3 AC3 AG3 AT3 AV4 AC4 AG4 AT4 ATRETURN45 AV5 AC5 AG5 AT5 AV6 AC6 AG6 AT6 ATRETURN67 AV7 AC7 AG7 AT7 AV8 AC8 AG8 AT8 ATRETURN89 AV9 AC9 AG9 AT9 Pads Analog Quad 0 Analog Quad 1 Analog Quad 2 Analog Quad 3 Analog Quad 4 Analog Quad 5 Analog Quad 6 Analog Quad 7 Analog Quad 8 Analog Quad 9 0 1 These are hardwired connections within Analog Quad. Analog MUX (32 to 1) 12 ADC Digital Output to FPGA 31 Temperature Monitor CHNUMBER[4:0] Internal Diode Figure 2-77 • ADC Block Diagram 2- 98 R e visio n 2 Fusion Family of Mixed Signal FPGAs ADC Description The Fusion ADC is a 12-bit SAR ADC. It offers a wide variety of features for different use models. Figure 2-78 shows a block diagram of the Fusion ADC. • • • • • • • Configurable resolution: 8-bit, 10-bit, and 12-bit mode DNL: 0.6 LSB for 10-bit mode INL: 0.4 LSB for 10-bit mode No missing code Internal VAREF = 2.56 V Maximum Sample Rate = 600 Ksps Power-up calibration and dynamic calibration after every sample to compensate for temperature drift over time CALIBRATE SAMPLE BUSY DATAVALID Analog MUX VAREF STATUS Signals from Analog Quads 32 SAR ADC 12 RESULT CHNUMBER STC MODE SYSCLK TVC ADCCLK Figure 2-78 • ADC Simplified Block Diagram ADC Theory of Operation An analog-to-digital converter is used to capture discrete samples of a continuous analog voltage and provide a discrete binary representation of the signal. Analog-to-digital converters are generally characterized in three ways: • • • Input voltage range Resolution Bandwidth or conversion rate The input voltage range of an ADC is determined by its reference voltage (VREF). Fusion devices include an internal 2.56 V reference, or the user can supply an external reference of up to 3.3 V. The following examples use the internal 2.56 V reference, so the full-scale input range of the ADC is 0 to 2.56 V. The resolution (LSB) of the ADC is a function of the number of binary bits in the converter. The ADC approximates the value of the input voltage using 2n steps, where n is the number of bits in the converter. Each step therefore represents VREF÷ 2n volts. In the case of the Fusion ADC configured for 12-bit operation, the LSB is 2.56 V / 4096 = 0.625 mV. Finally, bandwidth is an indication of the maximum number of conversions the ADC can perform each second. The bandwidth of an ADC is constrained by its architecture and several key performance characteristics. Revision 2 2- 99 Device Architecture There are several popular ADC architectures, each with advantages and limitations. The analog-to-digital converter in Fusion devices is a switched-capacitor Successive Approximation Register (SAR) ADC. It supports 8-, 10-, and 12-bit modes of operation with a cumulative sample rate up to 600 k samples per second (ksps). Built-in bandgap circuitry offers 1% internal voltage reference accuracy or an external reference voltage can be used. As shown in Figure 2-79, a SAR ADC contains N capacitors with binary-weighted values. Comparator C C/2 C/4 C / 2N–2 C / 2N–1 VIN VREF Figure 2-79 • Example SAR ADC Architecture To begin a conversion, all of the capacitors are quickly discharged. Then VIN is applied to all the capacitors for a period of time (acquisition time) during which the capacitors are charged to a value very close to VIN. Then all of the capacitors are switched to ground, and thus –VIN is applied across the comparator. Now the conversion process begins. First, C is switched to VREF. Because of the binary weighting of the capacitors, the voltage at the input of the comparator is then shown by EQ 11. Voltage at input of comparator = –VIN + VREF / 2 EQ 11 If VIN is greater than VREF / 2, the output of the comparator is 1; otherwise, the comparator output is 0. A register is clocked to retain this value as the MSB of the result. Next, if the MSB is 0, C is switched back to ground; otherwise, it remains connected to VREF, and C / 2 is connected to VREF. The result at the comparator input is now either –VIN + VREF / 4 or –VIN + 3 VREF / 4 (depending on the state of the MSB), and the comparator output now indicates the value of the next most significant bit. This bit is likewise registered, and the process continues for each subsequent bit until a conversion is completed. The conversion process requires some acquisition time plus N + 1 ADC clock cycles to complete. 2- 10 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs This process results in a binary approximation of VIN. Generally, there is a fixed interval T, the sampling period, between the samples. The inverse of the sampling period is often referred to as the sampling frequency fS = 1 / T. The combined effect is illustrated in Figure 2-80. L SB T Figure 2-80 • Conversion Example Figure 2-80 demonstrates that if the signal changes faster than the sampling rate can accommodate, or if the actual value of VIN falls between counts in the result, this information is lost during the conversion. There are several techniques that can be used to address these issues. First, the sampling rate must be chosen to provide enough samples to adequately represent the input signal. Based on the Nyquist-Shannon Sampling Theorem, the minimum sampling rate must be at least twice the frequency of the highest frequency component in the target signal (Nyquist Frequency). For example, to recreate the frequency content of an audio signal with up to 22 KHz bandwidth, the user must sample it at a minimum of 44 ksps. However, as shown in Figure 2-80, significant post-processing of the data is required to interpolate the value of the waveform during the time between each sample. Similarly, to re-create the amplitude variation of a signal, the signal must be sampled with adequate resolution. Continuing with the audio example, the dynamic range of the human ear (the ratio of the amplitude of the threshold of hearing to the threshold of pain) is generally accepted to be 135 dB, and the dynamic range of a typical symphony orchestra performance is around 85 dB. Most commercial recording media provide about 96 dB of dynamic range using 16-bit sample resolution. But 16-bit fidelity does not necessarily mean that you need a 16-bit ADC. As long as the input is sampled at or above the Nyquist Frequency, post-processing techniques can be used to interpolate intermediate values and reconstruct the original input signal to within desired tolerances. If sophisticated digital signal processing (DSP) capabilities are available, the best results are obtained by implementing a reconstruction filter, which is used to interpolate many intermediate values with higher resolution than the original data. Interpolating many intermediate values increases the effective number of samples, and higher resolution increases the effective number of bits in the sample. In many cases, however, it is not cost-effective or necessary to implement such a sophisticated reconstruction algorithm. For applications that do not require extremely fine reproduction of the input signal, alternative methods can enhance digital sampling results with relatively simple post-processing. The details of such techniques are out of the scope of this chapter; refer to the Improving ADC Results through Oversampling and Post-Processing of Data white paper for more information. Revision 2 2- 101 Device Architecture ADC Terminology Conversion Time Conversion time is the interval between the release of the hold state (imposed by the input circuitry of a track-and-hold) and the instant at which the voltage on the sampling capacitor settles to within one LSB of a new input value. DNL – Differential Non-Linearity For an ideal ADC, the analog-input levels that trigger any two successive output codes should differ by one LSB (DNL = 0). Any deviation from one LSB in defined as DNL (Figure 2-81). Ideal Output ADC Output Code Error = –0.5 LSB Actual Output Error = +1 LSB Input Voltage to Prescaler Figure 2-81 • Differential Non-Linearity (DNL) ENOB – Effective Number of Bits ENOB specifies the dynamic performance of an ADC at a specific input frequency and sampling rate. An ideal ADC’s error consists only of quantization of noise. As the input frequency increases, the overall noise (particularly in the distortion components) also increases, thereby reducing the ENOB and SINAD (also see “Signal-to-Noise and Distortion Ratio (SINAD)”.) ENOB for a full-scale, sinusoidal input waveform is computed using EQ 12. SINAD – 1.76 ENOB = -----------------------------------6.02 EQ 12 FS Error – Full-Scale Error Full-scale error is the difference between the actual value that triggers that transition to full-scale and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. 2- 10 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Gain Error The gain error of an ADC indicates how well the slope of an actual transfer function matches the slope of the ideal transfer function. Gain error is usually expressed in LSB or as a percent of full-scale (%FSR). Gain error is the full-scale error minus the offset error (Figure 2-82). Gain = 2 LSB 1...11 Ideal Output ADC Output Code Actual Output Input Voltage to Prescaler Figure 2-82 • Gain Error Gain Error Drift Gain-error drift is the variation in gain error due to a change in ambient temperature, typically expressed in ppm/°C. Revision 2 FS Voltage 0...00 2- 103 Device Architecture INL – Integral Non-Linearity INL is the deviation of an actual transfer function from a straight line. After nullifying offset and gain errors, the straight line is either a best-fit straight line or a line drawn between the end points of the transfer function (Figure 2-83). INL = +0.5 LSB Ideal Output ADC Output Code Actual Output INL = +1 LSB Input Voltage to Prescaler Figure 2-83 • Integral Non-Linearity (INL) LSB – Least Significant Bit In a binary number, the LSB is the least weighted bit in the group. Typically, the LSB is the furthest right bit. For an ADC, the weight of an LSB equals the full-scale voltage range of the converter divided by 2N, where N is the converter’s resolution. EQ 13 shows the calculation for a 10-bit ADC with a unipolar full-scale voltage of 2.56 V: 1 LSB = (2.56 V / 210) = 2.5 mV EQ 13 No Missing Codes An ADC has no missing codes if it produces all possible digital codes in response to a ramp signal applied to the analog input. Offset Error Offset error indicates how well the actual transfer function matches the ideal transfer function at a single point. For an ideal ADC, the first transition occurs at 0.5 LSB above zero. The offset voltage is measured by applying an analog input such that the ADC outputs all zeroes and increases until the first transition occurs (Figure 2-84 on page 2-105). 2- 10 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Ideal Output ADC Output Code Actual Output 0...01 Offset Error = 1.5 LSB 0...00 Input Voltage to Prescaler Figure 2-84 • Offset Error Resolution ADC resolution is the number of bits used to represent an analog input signal. To more accurately replicate the analog signal, resolution needs to be increased. Sampling Rate Sampling rate or sample frequency, specified in samples per second (sps), is the rate at which an ADC acquires (samples) the analog input. SNR – Signal-to-Noise Ratio SNR is the ratio of the amplitude of the desired signal to the amplitude of the noise signals at a given point in time. For a waveform perfectly reconstructed from digital samples, the theoretical maximum SNR (EQ 14) is the ratio of the full-scale analog input (RMS value) to the RMS quantization error (residual error). The ideal, theoretical minimum ADC noise is caused by quantization error only and results directly from the ADC’s resolution (N bits): SNR dB[MAX] = 6.02 dB × N + 1.76 dB EQ 14 SINAD – Signal-to-Noise and Distortion SINAD is the ratio of the rms amplitude to the mean value of the root-sum-square of the all other spectral components, including harmonics, but excluding DC. SINAD is a good indication of the overall dynamic performance of an ADC because it includes all components which make up noise and distortion. Total Harmonic Distortion THD measures the distortion content of a signal, and is specified in decibels relative to the carrier (dBc). THD is the ratio of the RMS sum of the selected harmonics of the input signal to the fundamental itself. Only harmonics within the Nyquist limit are included in the measurement. Revision 2 2- 105 Device Architecture TUE – Total Unadjusted Error TUE is a comprehensive specification that includes linearity errors, gain error, and offset error. It is the worst-case deviation from the ideal device performance. TUE is a static specification (Figure 2-85). TUE = ±0.5 LSB ADC Output Code IDEAL OUTPUT Input Voltage to Prescaler Figure 2-85 • Total Unadjusted Error (TUE) ADC Operation Once the ADC has powered up and been released from reset, ADCRESET, the ADC will initiate a calibration routine designed to provide optimal ADC performance. The Fusion ADC offers a robust calibration scheme to reduce integrated offset and linearity errors. The offset and linearity errors of the main capacitor array are compensated for with an 8-bit calibration capacitor array. The offset/linearity error calibration is carried out in two ways. First, a power-up calibration is carried out when the ADC comes out of reset. This is initiated by the CALIBRATE output of the Analog Block macro and is a fixed number of ADC_CLK cycles (3,840 cycles), as shown in Figure 2-87 on page 2-113. In this mode, the linearity and offset errors of the capacitors are calibrated. To further compensate for drift and temperature-dependent effects, every conversion is followed by postcalibration of either the offset or a bit of the main capacitor array. The post-calibration ensures that, over time and with temperature, the ADC remains consistent. After both calibration and the setting of the appropriate configurations, as explained above, the ADC is ready for operation. Setting the ADCSTART signal high for one clock period will initiate the sample and conversion of the analog signal on the channel as configured by CHNUMBER[4:0]. The status signals SAMPLE and BUSY will show when the ADC is sampling and converting (Figure 2-89 on page 2-114). Both SAMPLE and BUSY will initially go high. After the ADC has sampled and held the analog signal, SAMPLE will go low. After the entire operation has completed and the analog signal is converted, BUSY will go low and DATAVALID will go high. This indicates that the digital result is available on the RESULT[11:0] pins. DATAVALID will remain high until a subsequent ADC_START is issued. The DATAVALID goes low on the rising edge of SYSCLK as shown in Figure 2-88 on page 2-113. The RESULT signals will be kept constant until the ADC finishes the subsequent sample. The next sampled RESULT will be available when DATAVALID goes high again. It is ideal to read the RESULT when DATAVALID is '1'. The RESULT is latched and remains unchanged until the next DATAVLAID rising edge. 2- 10 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs ADC Input Multiplexer At the input to the Fusion ADC is a 32:1 multiplexer. Of the 32 input channels, up to 30 are user definable. Two of these channels are hardwired internally. Channel 31 connects to an internal temperature diode so the temperature of the Fusion device itself can be monitored. Channel 0 is wired to the FPGA’s 1.5 V VCC supply, enabling the Fusion device to monitor its own power supply. Doing this internally makes it unnecessary to use an analog I/O to support these functions. The balance of the MUX inputs are connected to Analog Quads (see the "Analog Quad" section on page 2-82). Table 2-40 defines which Analog Quad inputs are associated with which specific analog MUX channels. The number of Analog Quads present is device-dependent; refer to the family list in the "Fusion Family" table on page I of this datasheet for the number of quads per device. Regardless of the number of quads populated in a device, the internal connections to both VCC and the internal temperature diode remain on Channels 0 and 31, respectively. To sample the internal temperature monitor, it must be strobed (similar to the AT pads). The TMSTBINT pin on the Analog Block macro is the control for strobing the internal temperature measurement diode. To determine which channel is selected for conversion, there is a five-pin interface on the Analog Block, CHNUMBER[4:0], defined in Table 2-39. Table 2-39 • Channel Selection Channel Number 0 1 2 3 . . . 30 31 CHNUMBER[4:0] 00000 00001 00010 00011 . . . 11110 11111 Table 2-40 shows the correlation between the analog MUX input channels and the analog input pins. Table 2-40 • Analog MUX Channels Analog MUX Channel 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Signal Vcc_analog AV0 AC0 AT0 AV1 AC1 AT1 AV2 AC2 AT2 AV3 AC3 AT3 AV4 AC4 AT4 Analog Quad 4 Analog Quad 3 Analog Quad 2 Analog Quad 1 Analog Quad 0 Analog Quad Number Revision 2 2- 107 Device Architecture Table 2-40 • Analog MUX Channels (continued) Analog MUX Channel 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Signal AV5 AC5 AT5 AV6 AC6 AT6 AV7 AC7 AT7 AV8 AC8 AT8 AV9 AC9 AT9 Internal temperature monitor Analog Quad 9 Analog Quad 8 Analog Quad 7 Analog Quad 6 Analog Quad Number Analog Quad 5 The ADC can be powered down independently of the FPGA core, as an additional control or for powersaving considerations, via the PWRDWN pin of the Analog Block. The PWRDWN pin controls only the comparators in the ADC. ADC Modes The Fusion ADC can be configured to operate in 8-, 10-, or 12-bit modes, power-down after conversion, and dynamic calibration. This is controlled by MODE[3:0], as defined in Table 2-41 on page 2-108. The output of the ADC is the RESULT[11:0] signal. In 8-bit mode, the Most Significant 8 Bits RESULT[11:4] are used as the ADC value and the Least Significant 4 Bits RESULT[3:0] are logical '0's. In 10-bit mode, RESULT[11:2] are used the ADC value and RESULT[1:0] are logical 0s. Table 2-41 • Mode Bits Function Name MODE Bits 3 Function 0 – Internal calibration after every conversion; two ADCCLK cycles are used after the conversion. 1 – No calibration after every conversion MODE MODE 2 1:0 0 – Power-down after conversion 1 – No Power-down after conversion 00 – 10-bit 01 – 12-bit 10 – 8-bit 11 – Unused Integrated Voltage Reference The Fusion device has an integrated on-chip 2.56 V reference voltage for the ADC. The value of this reference voltage was chosen to make the prescaling and postscaling factors for the prescaler blocks change in a binary fashion. However, if desired, an external reference voltage of up to 3.3 V can be 2- 10 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs connected between the VAREF and ADCGNDREF pins. The VAREFSEL control pin is used to select the reference voltage. Table 2-42 • VAREF Bit Function Name VAREF Bit 0 Reference voltage selection 0 – Internal voltage reference selected. VAREF pin outputs 2.56 V. 1 – Input external voltage reference from VAREF and ADCGNDREF Function ADC Clock The speed of the ADC depends on its internal clock, ADCCLK, which is not accessible to users. The ADCCLK is derived from SYSCLK. Input signal TVC[7:0], Time Divider Control, determines the speed of the ADCCLK in relationship to SYSCLK, based on EQ 15. t ADCCLK = 4 × ( 1 + TVC ) × t SYSCLK EQ 15 TVC: Time Divider Control (0–255) tADCCLK is the period of ADCCLK, and must be between 0.5 MHz and 10 MHz tSYSCLK is the period of SYSCLK Table 2-43 • TVC Bits Function Name TVC Bits [7:0] Function SYSCLK divider control The frequency of ADCCLK, fADCCLK, must be within 0.5 Hz to 10 MHz. The inputs to the ADC are synchronized to SYSCLK. A conversion is initiated by asserting the ADCSTART signal on a rising edge of SYSCLK. Figure 2-88 on page 2-113 and Figure 2-89 on page 2-114 show the timing diagram for the ADC. Acquisition Time or Sample Time Control Acquisition time (tSAMPLE) specifies how long an analog input signal has to charge the internal capacitor array. Figure 2-86 shows a simplified internal input sampling mechanism of a SAR ADC. Sample and Hold Rsource ZINAD CINAD Figure 2-86 • Simplified Sample and Hold Circuitry The internal impedance (ZINAD), external source resistance (RSOURCE), and sample capacitor (CINAD) form a simple RC network. As a result, the accuracy of the ADC can be affected if the ADC is given insufficient time to charge the capacitor. To resolve this problem, you can either reduce the source resistance or increase the sampling time by changing the acquisition time using the STC signal. EQ 16 through EQ 18 can be used to calculate the acquisition time required for a given input. The STC signal gives the number of sample periods in ADCCLK for the acquisition time of the desired signal. If the actual acquisition time is higher than the STC value, the settling time error can affect the accuracy of the ADC, because the sampling capacitor is only partially charged within the given sampling cycle. Example acquisition times are given in Table 2-44 and Table 2-45. When controlling the sample time for the ADC Revision 2 2- 109 Device Architecture along with the use of the active bipolar prescaler, current monitor, or temperature monitor, the minimum sample time(s) for each must be obeyed. EQ 19 can be used to determine the appropriate value of STC. You can calculate the minimum actual acquisition time by using EQ 16: VOUT = VIN(1 – e–t/RC) EQ 16 For 0.5 LSB gain error, VOUT should be replaced with (VIN –(0.5 × LSB Value)): (VIN – 0.5 × LSB Value) = VIN(1 – e–t/RC) EQ 17 where VIN is the ADC reference voltage (VREF) Solving EQ 17: t = RC x ln (VIN / (0.5 x LSB Value)) EQ 18 where R = ZINAD + RSOURCE and C = CINAD. Calculate the value of STC by using EQ 19. tSAMPLE = (2 + STC) x (1 / ADCCLK) or tSAMPLE = (2 + STC) x (ADC Clock Period) EQ 19 where ADCCLK = ADC clock frequency in MHz. tSAMPLE = 0.449 µs from bit resolution in Table 2-44. ADC Clock frequency = 10 MHz or a 100 ns period. STC = (tSAMPLE / (1 / 10 MHz)) – 2 = 4.49 – 2 = 2.49. You must round up to 3 to accommodate the minimum sample time. Table 2-44 • Acquisition Time Example with VAREF = 2.56 V VIN = 2.56V, R = 4K (RSOURCE ~ 0), C = 18 pF Resolution 8 10 12 LSB Value (mV) 10 2.5 0.625 Min. Sample/Hold Time for 0.5 LSB (µs) 0.449 0.549 0.649 Table 2-45 • Acquisition Time Example with VAREF = 3.3 V VIN = 3.3V, R = 4K (RSOURCE ~ 0), C = 18 pF Resolution 8 10 12 LSB Value (mV) 12.891 3.223 0.806 Min. Sample/Hold time for 0.5 LSB (µs) 0.449 0.549 0.649 Sample Phase A conversion is performed in three phases. In the first phase, the analog input voltage is sampled on the input capacitor. This phase is called sample phase. During the sample phase, the output signals BUSY and SAMPLE change from '0' to '1', indicating the ADC is busy and sampling the analog signal. The sample time can be controlled by input signals STC[7:0]. The sample time can be calculated by EQ 20. When controlling the sample time for the ADC along with the use of Prescaler or Current Monitor or Temperature Monitor, the minimum sample time for each must be obeyed. Refer to Table 2-46 on page 2-111 and the "Acquisition Time or Sample Time Control" section on page 2-109 t sample = ( 2 + STC ) × t ADCCLK EQ 20 STC: Sample Time Control value (0–255) tSAMPLE is the sample time 2- 11 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-46 • STC Bits Function Name STC Bits [7:0] Sample time control Function Sample time is computed based on the period of ADCCLK. Distribution Phase The second phase is called the distribution phase. During distribution phase, the ADC computes the equivalent digital value from the value stored in the input capacitor. In this phase, the output signal SAMPLE goes back to '0', indicating the sample is completed; but the BUSY signal remains '1', indicating the ADC is still busy for distribution. The distribution time depends strictly on the number of bits. If the ADC is configured as a 10-bit ADC, then 10 ADCCLK cycles are needed. EQ 8 describes the distribution time. t distrib = N × t ADCCLK EQ 21 N: Number of bits Post-Calibration Phase The last phase is the post-calibration phase. This is an optional phase. The post-calibration phase takes two ADCCLK cycles. The output BUSY signal will remain '1' until the post-calibration phase is completed. If the post-calibration phase is skipped, then the BUSY signal goes to '0' after distribution phase. As soon as BUSY signal goes to '0', the DATAVALID signal goes to '1', indicating the digital result is available on the RESULT output signals. DATAVAILD will remain '1' until the next ADCSTART is asserted. Microsemi recommends enabling post-calibration to compensate for drift and temperature-dependent effects. This ensures that the ADC remains consistent over time and with temperature. The post-calibration phase is enabled by bit 3 of the Mode register. EQ 9 describes the post-calibration time. t post-cal = MODE [ 3 ] × ( 2 × t ADCCLK ) EQ 22 MODE[3]: Bit 3 of the Mode register, described in Table 2-41 on page 2-108. The calculation for the conversion time for the ADC is summarized in EQ 10. tconv = tsync_read + tsample + tdistrib + tpost-cal + tsync_write EQ 23 tconv: conversion time tsync_read: maximum time for a signal to synchronize with SYSCLK. For calculation purposes, the worst case is a period of SYSCLK, tSYSCLK. tsample: Sample time tdistrib: Distribution time tpost-cal: Post-calibration time tsync_write: Maximum time for a signal to synchronize with SYSCLK. For calculation purposes, the worst case is a period of SYSCLK, tSYSCLK. Intra-Conversion Performing a conversion during power-up calibration is possible but should be avoided, since the performance is not guaranteed, as shown in Table 2-49 on page 2-119. This is described as intraconversion. Figure 2-90 on page 2-114 shows intra-conversion (conversion that starts during power-up calibration). Injected Conversion A conversion can be interrupted by another conversion. Before the current conversion is finished, a second conversion can be started by issuing a pulse on signal ADCSTART. When a second conversion is issued before the current conversion is completed, the current conversion would be dropped and the ADC would start the second conversion on the rising edge of the SYSCLK. This is known as injected conversion. Since the ADC is synchronous, the minimum time to issue a second conversion is two clock cycles of SYSCLK after the previous one. Figure 2-91 on page 2-115 shows injected conversion Revision 2 2- 111 Device Architecture (conversion that starts before a previously started conversion is finished). The total time for calibration still remains 3,840 ADCCLK cycles. ADC Example This example shows how to choose the correct settings to achieve the fastest sample time in 10-bit mode for a system that runs at 66 MHz. Assume the acquisition times defined in Table 2-44 on page 2-110 for 10-bit mode, which gives 0.549 µs as a minimum hold time. The period of SYSCLK: tSYSCLK = 1/66 MHz = 0.015 µs Choosing TVC between 1 and 33 will meet the maximum and minimum period for the ADCCLK requirement. A higher TVC leads to a higher ADCCLK period. The minimum TVC is chosen so that tdistrib and tpost-cal can be run faster. The period of ADCCLK with a TVC of 1 can be computed by EQ 24. t ADCCLK = 4 × ( 1 + TVC ) × t SYSCLK = 4 × ( 1 + 1 ) × 0.015 µs = 0.12 µs EQ 24 The STC value can now be computed by using the minimum sample/hold time from Table 2-44 on page 2-110, as shown in EQ 25. t sample 0.549 µs STC = -------------------- – 2 = ---------------------- – 2 = 4.575 – 2 = 2.575 t ADCCLK 0.12 µs EQ 25 You must round up to 3 to accommodate the minimum sample time requirement. The actual sample time, tsample, with an STC of 3, is now equal to 0.6 µs, as shown in EQ 26 t sample = ( 2 + STC ) × t ADCCLK = ( 2 + 3 ) × t ADCCLK = 5 × 0.12 µs = 0.6 µs EQ 26 Microsemi recommends post-calibration for temperature drift over time, so post-calibration is enabled. The post-calibration time, tpost-cal, can be computed by EQ 27. The post-calibration time is 0.24 µs. t post-cal = 2 × t ADCCLK = 0.24 µs EQ 27 The distribution time, tdistrib, is equal to 1.2 µs and can be computed as shown in EQ 28 (N is number of bits, referring back to EQ 8 on page 2-96). t distrib = N × t ADCCLK = 10 × 0.12 = 1.2 µs EQ 28 The total conversion time can now be summated, as shown in EQ 29 (referring to EQ 23 on page 2-111). tsync_read + tsample + tdistrib + tpost-cal + tsync_write = (0.015 + 0.60 + 1.2 + 0.24 + 0.015) µs = 2.07 µs EQ 29 The optimal setting for the system running at 66 MHz with an ADC for 10-bit mode chosen is shown in Table 2-47: Table 2-47 • Optimal Setting at 66 MHz in 10-Bit Mode TVC[7:0] STC[7:0] MODE[3:0] =1 =3 = b'0100 = 0x01 = 0x03 = 0x4* Note: No power-down after every conversion is chosen in this case; however, if the application is power-sensitive, the MODE[2] can be set to '0', as described above, and it will not affect any performance. 2- 11 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Timing Diagrams tCAL = 3,840 tADCCLK* SYSCLK tRECCLR ADCRESET tSUTVC TVC[7:0] tCK2QCAL CALIBRATE Note: *Refer to EQ 15 on page 2-109 for the calculation on the period of ADCCLK, tADCCLK. Figure 2-87 • Power-Up Calibration Status Signal Timing Diagram tREMCLR tHDTVC tCK2QCAL tMINSYSCLK SYSCLK tSUADCSTART ADCSTART tSUMODE MODE[3:0] tSUTVC TVC[7:0] tSUSTC STC[7:0] tSUVAREFSEL VAREF tSUCHNUM CHNUMBER[7:0] Figure 2-88 • Input Setup Time tMPWSYSCLK tHDADCSTART tHDMODE tHDTVC tHDSTC tHDVAREFSEL tHDCHNUM Revision 2 2- 113 Device Architecture Standard Conversion t SAMPLE1 t DATA2START3 SYSCLK t SUADCSTART t HDADCSTART ADCSTART t CK2QBUSY BUSY t CK2QSAMPLE SAMPLE t CONV2 t CK2QVAL t CK2QVAL DATAVALID t CLK2RESULT ADC_RESULT[11:0] 1 st Sample Result 2nd Sample Result Notes: 1. Refer to EQ 20 on page 2-110 for the calculation on the sample time, tSAMPLE. 2. See EQ 29 on page 2-112 for calculation on the conversion time, tCONV. 3. Minimum time to issue an ADCSTART after DATAVALID is 1 SYSCLK period Figure 2-89 • Standard Conversion Status Signal Timing Diagram Intra-Conversion SYSCLK ADCRESET ADCSTART tCK2QBUSY BUSY tCK2QSAMPLE SAMPLE tCLR2QVAL DATAVALID tCK2QCAL CALIBRATE Interrupts Power-Up Calibration Resumes Power-Up Calibration tCK2QCAL tCONV* tCK2QVAL tCK2QSAMPLE Note: *tCONV represents the conversion time of the second conversion. See EQ 6 on page 2-92 for calculation of the conversion time, tCONV. Figure 2-90 • Intra-Conversion Timing Diagram 2- 11 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Injected Conversion SYSCLK 1st Start ADCSTART 1st Conversion BUSY tCK2QSAMPLE SAMPLE tCK2QVAL DATAVALID tCONV* tCK2QVAL 1st Conversion Cancelled, 2nd Conversion tCK2QSAMPLE tCK2QBUSY 2nd Start Note: * See EQ 10 on page 2-96 for calculation on the conversion time, tCONV. Figure 2-91 • Injected Conversion Timing Diagram Revision 2 2- 115 Device Architecture ADC Interface Timing Table 2-48 • ADC Interface Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tSUMODE tHDMODE tSUTVC tHDTVC tSUSTC tHDSTC tSUVAREFSEL tHDVAREFSEL tSUCHNUM tHDCHNUM tSUADCSTART tHDADCSTART tCK2QBUSY tCK2QCAL tCK2QVAL tCK2QSAMPLE tCK2QRESULT tCLR2QBUSY tCLR2QCAL tCLR2QVAL tCLR2QSAMPLE tCLR2QRESULT tRECCLR tREMCLR tMPWSYSCLK tFMAXSYSCLK Description Mode Pin Setup Time Mode Pin Hold Time Clock Divide Control (TVC) Setup Time Clock Divide Control (TVC) Hold Time Sample Time Control (STC) Setup Time Sample Time Control (STC) Hold Time Voltage Reference Select (VAREFSEL) Setup Time Voltage Reference Select (VAREFSEL) Hold Time Channel Select (CHNUMBER) Setup Time Channel Select (CHNUMBER) Hold Time Start of Conversion (ADCSTART) Setup Time Start of Conversion (ADCSTART) Hold Time Busy Clock-to-Q Power-Up Calibration Clock-to-Q Valid Conversion Result Clock-to-Q Sample Clock-to-Q Conversion Result Clock-to-Q Busy Clear-to-Q Power-Up Calibration Clear-to-Q Valid Conversion Result Clear-to-Q Sample Clear-to-Q Conversion result Clear-to-Q Recovery Time of Clear Removal Time of Clear Clock Minimum Pulse Width for the ADC Clock Maximum Frequency for the ADC –2 0.56 0.26 0.68 0.32 1.58 1.27 0.00 0.67 0.90 0.00 0.75 0.43 1.33 0.63 3.12 0.22 2.53 2.06 2.15 2.41 2.17 2.25 0.00 0.63 4.00 100.00 –1 0.64 0.29 0.77 0.36 1.79 1.45 0.00 0.76 1.03 0.00 0.85 0.49 1.51 0.71 3.55 0.25 2.89 2.35 2.45 2.74 2.48 2.56 0.00 0.72 4.00 100.00 Std. 0.75 0.34 0.90 0.43 2.11 1.71 0.00 0.89 1.21 0.00 1.00 0.57 1.78 0.84 4.17 0.30 3.39 2.76 2.88 3.22 2.91 3.01 0.00 0.84 4.00 100.00 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns MHz 2- 11 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Typical Performance Characteristics Temperature Errror vs. Die Temperature 3.5 3 2.5 2 1.5 1 0.5 0 –40 10 60 110 Temperature Error (°C) Temperature (°C) Figure 2-92 • Temperature Error Temperature Error vs. Interconnect Capacitance 1 0 Temperature Error (°C) -1 -2 -3 -4 -5 -6 -7 0 500 1000 Capacitance (pF ) 1500 2000 Figure 2-93 • Effect of External Sensor Capacitance Revision 2 2- 117 Device Architecture Temperature Reading Noise RMS vs. Averaging 12 10 Noise RMS (°C) 8 6 4 2 0 1 10 100 Number of Averages 1000 10000 Figure 2-94 • Temperature Reading Noise When Averaging is Used 2- 11 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Analog System Characteristics Table 2-49 • Analog Channel Specifications Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise), Typical: VCC33A = 3.3 V, VCC = 1.5 V Parameter Description Input Voltage (Prescaler) VINAP Uncalibrated Gain and Offset Errors Calibrated Gain and Offset Errors Bandwidth1 Input Resistance Scaling Factor Sample Time Current Monitor Using Analog Pads AV and AC VRSM1 Maximum Differential Input Voltage Resolution Common Mode Range CMRR Common Mode Rejection Ratio DC – 1 KHz 1 KHz - 10 KHz > 10 KHz tCMSHI Strobe High time ADC conv. time 5 0.02 Input differential voltage > 50 mV –2 –(0.05 x VRSM) to +2 + (0.05 x VRSM) 60 50 30 200 Refer to "Current Monitor" section – 10.5 to +12 V dB dB dB µs VAREF / 10 mV Refer to Table 3-3 on page 3-4 Prescaler modes (Table 2-57 on page 2-132) 10 µs Condition Refer to Table 3-2 on page 3-3 Refer to Table 2-51 on page 2-124 Refer to Table 2-52 on page 2-125 100 KHz Min. Typ. Max. Units Voltage Monitor Using Analog Pads AV, AC and AT (using prescaler) tCMSHI tCMSHI Strobe Low time Settling time Accuracy µs µs mV Notes: 1. VRSM is the maximum voltage drop across the current sense resistor. 2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no reliability concern on digital inputs as long as VIND does not exceed these limits. 3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency. 4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance allowed across the AT pins is 500 pF. 5. The temperature offset is a fixed positive value. 6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on voltage on the pad. 7. When using SmartGen Analog System Builder, CalibIP is required to obtain 0 offset. For further details on CalibIP, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User’s Guide. Revision 2 2- 119 Device Architecture Table 2-49 • Analog Channel Specifications (continued) Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise), Typical: VCC33A = 3.3 V, VCC = 1.5 V Parameter Description 8-bit ADC 10-bit ADC 12-bit ADC AFS090, AFS250, AFS090, AFS250, uncalibrated7 calibrated7 uncalibrated7 calibrated7 ±3 10 100 1.3 8-bit ADC 10-bit ADC 12-bit ADC Systematic Offset5 AFS090, AFS250, uncalibrated7 AFS090, AFS250, calibrated7 AFS600, AFS1500 uncalibrated7 AFS600, AFS1500 Accuracy tTMSHI tTMSLO tTMSSET Notes: 1. VRSM is the maximum voltage drop across the current sense resistor. 2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no reliability concern on digital inputs as long as VIND does not exceed these limits. 3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency. 4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance allowed across the AT pins is 500 pF. 5. The temperature offset is a fixed positive value. 6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on voltage on the pad. 7. When using SmartGen Analog System Builder, CalibIP is required to obtain 0 offset. For further details on CalibIP, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User’s Guide. Condition Min. Typ. 4 1 0.25 5 0 11 0 Max. Units °C °C °C °C °C °C °C Temperature Monitor Using Analog Pad AT External Resolution Temperature Monitor (external diode 2N3904, Systematic Offset5 TJ = 25°C)4 AFS600, AFS1500, AFS600, AFS1500, Accuracy ±5 °C µA µA nF °C °C °C External Sensor Source High level, TMSTBx = 0 Current Low level, TMSTBx = 1 Max Capacitance on AT pad Internal Temperature Monitor Resolution 4 1 0.25 5 0 11 0 ±3 10 5 5 ±5 105 °C °C °C °C µs µs µs calibrated7 Strobe High time Strobe Low time Settling time 2- 12 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-49 • Analog Channel Specifications (continued) Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise), Typical: VCC33A = 3.3 V, VCC = 1.5 V Parameter VIND2,3 VHYSDIN VIHDIN VILDIN VMPWDIN FDIN ISTBDIN IDYNDIN tINDIN VG IG Description Input Voltage Hysteresis Input High Input Low Minimum Pulse With Maximum Frequency Input Leakage Current Dynamic Current Input Delay Voltage Range Output Current Drive Refer to Table 3-2 on page 3-3 High Current Mode6 at 1.0 V Low Current Mode: ±1 µA Low Current Mode: ±3 µA Low Current Mode: ± 10 µA Low Current Mode: ± 30 µA IOFFG FG Maximum Off Current Maximum switching rate High Current kΩ resistive load Mode6 at 1.0 V, 1 1.3 3 7 25 78 0.8 2.0 7.4 21.0 1.0 2.7 9.0 27.0 ±20 1.3 3.3 11.5 32.0 100 mA µA µA µA µA nA MHz KHz KHz KHz KHz 2 20 10 50 10 Condition Refer to Table 3-2 on page 3-3 0.3 1.2 0.9 V V V ns MHz µA µA ns Min. Typ. Max. Units Digital Input using Analog Pads AV, AC and AT Gate Driver Output Using Analog Pad AG Low Current Mode: ±1 µA, 3 MΩ resistive load Low Current Mode: ±3 µA, 1 MΩ resistive load Low Current Mode: ±10 µA, 300 kΩ resistive load Low Current Mode: ±30 µA, 105 kΩ resistive load Notes: 1. VRSM is the maximum voltage drop across the current sense resistor. 2. Analog inputs used as digital inputs can tolerate the same voltage limits as the corresponding analog pad. There is no reliability concern on digital inputs as long as VIND does not exceed these limits. 3. VIND is limited to VCC33A + 0.2 to allow reaching 10 MHz input frequency. 4. An averaging of 1,024 samples (LPF setting in Analog System Builder) is required and the maximum capacitance allowed across the AT pins is 500 pF. 5. The temperature offset is a fixed positive value. 6. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on voltage on the pad. 7. When using SmartGen Analog System Builder, CalibIP is required to obtain 0 offset. For further details on CalibIP, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User’s Guide. Revision 2 2- 121 Device Architecture Table 2-50 • ADC Characteristics in Direct Input Mode Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise), Typical: VCC33A = 3.3 V, VCC = 1.5 V Parameter VINADC CINADC Description Input Voltage (Direct Input) Input Capacitance Condition Refer to Table 3-2 on page 3-3 Channel not selected Channel selected but not sampling Channel selected and sampling ZINADC Input Impedance 8-bit mode 10-bit mode 12-bit mode Analog Reference Voltage VAREF VAREF Accuracy Temperature Drift of Internal Reference External Reference ADC Accuracy (using external reference) DC Accuracy TUE Total Unadjusted Error 8-bit mode 10-bit mode 12-bit mode INL Integral Non-Linearity 8-bit mode 10-bit mode 12-bit mode DNL Differential Non-Linearity (no missing code) 8-bit mode 10-bit mode 12-bit mode Offset Error 8-bit mode 10-bit mode 12-bit mode Gain Error 8-bit mode 10-bit mode 12-bit mode Gain Error reference) Notes: 1. Accuracy of the external reference is 2.56 V ± 4.6 mV. 2. Data is based on characterization. 3. The sample rate is time-shared among active analog inputs. 1,2 Min. Typ. Max. Units Direct Input using Analog Pad AV, AC, AT 7 8 18 2 2 2 2.537 2.56 65 2.527 VCC33A + 0.05 2.583 pF pF pF kΩ kΩ kΩ V ppm / °C V TJ = 25°C 0.29 0.72 1.8 0.20 0.32 1.71 0.20 0.60 2.40 0.01 0.05 0.20 0.0004 0.002 0.007 2 0.25 0.43 1.80 0.24 0.65 2.48 0.17 0.20 0.40 0.003 0.011 0.044 LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB LSB % FSR (with internal All modes 2- 12 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-50 • ADC Characteristics in Direct Input Mode (continued) Commercial Temperature Range Conditions, TJ = 85°C (unless noted otherwise), Typical: VCC33A = 3.3 V, VCC = 1.5 V Parameter SNR Description Signal-to-Noise Ratio Condition 8-bit mode 10-bit mode 12-bit mode SINAD Signal-to-Noise Distortion 8-bit mode 10-bit mode 12-bit mode THD Total Harmonic Distortion 8-bit mode 10-bit mode 12-bit mode ENOB Effective Number of Bits 8-bit mode 10-bit mode 12-bit mode Conversion Rate Conversion Time 8-bit mode 10-bit mode 12-bit mode Sample Rate 8-bit mode 10-bit mode 12-bit mode Notes: 1. Accuracy of the external reference is 2.56 V ± 4.6 mV. 2. Data is based on characterization. 3. The sample rate is time-shared among active analog inputs. Min. 48.0 58.0 62.9 47.6 57.4 62.0 Typ. 49.5 60.0 64.5 49.5 59.8 64.2 –74.4 –78.3 –77.9 Max. Units dB dB dB dB dB dB Dynamic Performance –63.0 –63.0 –64.4 dBc dBc dBc bits bits bits µs µs µs 7.6 9.5 10.0 1.7 1.8 2 7.9 9.6 10.4 600 550 500 Ksps Ksps Ksps Revision 2 2- 123 Device Architecture Table 2-51 • Uncalibrated Analog Channel Accuracy* Worst-Case Industrial Conditions, TJ = 85°C Total Channel Error (LSB) Analog Prescaler Neg. Pos. Pad Range (V) Max. Med. Max. Positive Range AV, AC 16 8 4 2 1 0.5 0.25 0.125 AT 16 4 Negative Range AV, AC 16 8 4 2 1 0.5 0.25 0.125 –35 –65 –86 –136 –98 –121 –149 –188 –10 –19 –28 –53 –35 –46 –49 –67 9 12 21 37 8 7 19 38 –24 –34 –64 –115 –39 –54 –72 –112 –6 –12 –24 –42 –8 –14 –16 –27 –22 –40 –45 –70 –25 –41 –53 –89 –3 –10 –2 –5 –9 –19 –7 –12 –14 –29 9 2 12 17 24 33 5 8 19 24 15 15 –11 –11 –16 –33 –11 –12 –20 –40 –4 –11 –2 –5 –11 –20 –3 –7 –14 –28 0 –2 Channel Input Offset Error (LSB) Neg Max Med. Pos. Max. Channel Input Offset Error (mV) Neg. Max. Med. Pos. Max. Channel Gain Error (%FSR) Min. Typ. Max. ADC in 10-Bit Mode 14 21 36 66 26 38 40 88 4 11 –169 –87 –63 –66 –11 –6 –5 –5 –64 –44 –32 –40 –43 –39 –3 –4 –3 –4 5 –8 224 166 144 131 26 19 10 11 64 44 3 2 2 2 3 3 5 7 1 1 0 0 0 0 –1 –1 0 0 0 0 –3 –4 –4 –4 –3 –3 –4 –5 –1 –1 ADC in 10-Bit Mode 9 9 19 39 15 18 40 56 –383 –268 –254 –230 –39 –27 –18 –14 –96 –99 –96 –83 –8 –7 –4 –3 148 75 76 78 15 9 10 7 5 5 5 6 10 10 14 16 –1 –1 –1 –2 –3 –4 –4 –5 –6 –5 –6 –7 –10 –11 –12 –14 Note: *Channel Accuracy includes prescaler and ADC accuracies. For 12-bit mode, multiply the LSB count by 4. For 8-bit mode, divide the LSB count by 4. Gain remains the same. 2- 12 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-52 • Calibrated Analog Channel Accuracy 1,2,3 Worst-Case Industrial Conditions, TJ = 85°C Condition Analog Pad AV, AC Prescaler Range (V) Positive Range 16 8 4 2 1 AT 16 4 Negative Range AV, AC 16 8 4 2 1 Notes: 1. Channel Accuracy includes prescaler and ADC accuracies. For 12-bit mode, multiply the LSB count by 4. For 8-bit mode, divide the LSB count by 4. Overall accuracy remains the same. 2. Requires enabling Analog Calibration using SmartGen Analog System Builder. For further details, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User’s Guide. 3. Calibrated with two-point calibration methodology, using 20% and 80% full-scale points. 4. The lower limit of the input voltage is determined by the prescaler input offset. Total Channel Error (LSB) Negative Max. –6 –6 –7 –7 –6 –5 –7 –7 –7 –7 –7 –16 Median 1 0 –1 0 –1 0 –1 ADC in 10-Bit Mode 1 –1 –2 –2 –1 Positive Max. 6 6 7 7 6 5 7 9 7 9 7 20 Input Voltage4 (V) 0.300 to 12.0 0.250 to 8.00 0.200 to 4.00 0.150 to 2.00 0.050 to 1.00 0.300 to 16.0 0.100 to 4.00 –0.400 to –10.5 –0.350 to –8.00 –0.300 to –4.00 –0.250 to –2.00 –0.050 to –1.00 ADC in 10-Bit Mode Revision 2 2- 125 Device Architecture Table 2-53 • Analog Channel Accuracy: Monitoring Standard Positive Voltages Typical Conditions, TA = 25°C Calibrated Typical Error per Positive Prescaler Setting 1 (%FSR) Input Voltage (V) 15 14 12 5 3.3 2.5 1.8 1.5 1.2 0.9 Notes: 1. Requires enabling Analog Calibration using SmartGen Analog System Builder. For further details, refer to the "Temperature, Voltage, and Current Calibration in Fusion FPGAs" chapter of the Fusion FPGA Fabric User’s Guide. 2. Direct ADC mode using an external VAREF of 2.56V±4.6mV, without Analog Calibration macro. 3. For input greater than 2.56 V, the ADC output will saturate. A higher VAREF or prescaler usage is recommended. Direct ADC 2,3 (%FSR) VAREF = 2.56 V 16 V (AT) 1 1 1 2 2 3 4 5 7 9 16 V (12 V) (AV/AC) 8V (AV/AC) 4 V (AT) 4V (AV/AC) 2V (AV/AC) 1V (AV/AC) 1 2 2 2 4 5 6 9 1 1 1 1 2 2 4 1 1 1 2 2 3 1 1 1 2 2 3 1 1 1 1 1 1 1 1 1 1 Examples Calculating Accuracy for an Uncalibrated Analog Channel Formula For a given prescaler range, EQ 30 gives the output voltage. Output Voltage = (Channel Output Offset in V) + (Input Voltage x Channel Gain) EQ 30 where Channel Output offset in V = Channel Input offset in LSBs x Equivalent voltage per LSB Channel Gain Factor = 1+ (% Channel Gain / 100) Example Input Voltage = 5 V Chosen Prescaler range = 8 V range Refer to Table 2-51 on page 2-124. Max. Output Voltage = (Max Positive input offset) + (Input Voltage x Max Positive Channel Gain) Max. Positive input offset = (21 LSB) x (8 mV per LSB in 10-bit mode) Max. Positive input offset = 166 mV Max. Positive Gain Error = +3% Max. Positive Channel Gain = 1 + (+3% / 100) Max. Positive Channel Gain = 1.03 Max. Output Voltage = (166 mV) + (5 V x 1.03) Max. Output Voltage = 5.316 V 2- 12 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Similarly, Min. Output Voltage = (Max. Negative input offset) + (Input Voltage x Max. Negative Channel Gain) = (–88 mV) + (5 V x 0.96) = 4.712 V Calculating Accuracy for a Calibrated Analog Channel Formula For a given prescaler range, EQ 31 gives the output voltage. Output Voltage = Channel Error in V + Input Voltage EQ 31 where Channel Error in V = Total Channel Error in LSBs x Equivalent voltage per LSB Example Input Voltage = 5 V Chosen Prescaler range = 8 V range Refer to Table 2-52 on page 2-125. Max. Output Voltage = Max. Positive Channel Error in V + Input Voltage Max. Positive Channel Error in V = (6 LSB) × (8 mV per LSB in 10-bit mode) = 48 mV Max. Output Voltage = 48 mV + 5 V = 5.048 V Similarly, Min. Output Voltage = Max. Negative Channel Error in V + Input Voltage = (–48 mV) + 5 V = 4.952 V Calculating LSBs from a Given Error Budget Formula For a given prescaler range, LSB count = ± (Input Voltage × Required % error) / (Equivalent voltage per LSB) Example Input Voltage = 3.3 V Required error margin= 1% Refer to Table 2-52 on page 2-125. Equivalent voltage per LSB = 16 mV for a 16V prescaler, with ADC in 10-bit mode LSB Count = ± (5.0 V × 1%) / (0.016) LSB Count = ± 3.125 Equivalent voltage per LSB = 8 mV for an 8 V prescaler, with ADC in 10-bit mode LSB Count = ± (5.0 V × 1%) / (0.008) LSB Count = ± 6.25 The 8 V prescaler satisfies the calculated LSB count accuracy requirement (see Table 2-52 on page 2-125). Revision 2 2- 127 Device Architecture Analog Configuration MUX The ACM is the interface between the FPGA, the Analog Block configurations, and the real-time counter. Microsemi Libero IDE will generate IP that will load and configure the Analog Block via the ACM. However, users are not limited to using the Libero IDE IP. This section provides a detailed description of the ACM's register map, truth tables for proper configuration of the Analog Block and RTC, as well as timing waveforms so users can access and control the ACM directly from their designs. The Analog Block contains four 8-bit latches per Analog Quad that are initialized through the ACM. These latches act as configuration bits for Analog Quads. The ACM block runs from the core voltage supply (1.5 V). Access to the ACM is achieved via 8-bit address and data busses with enables. The pin list is provided in Table 2-36 on page 2-80. The ACM clock speed is limited to a maximum of 10 MHz, more than sufficient to handle the low-bandwidth requirements of configuring the Analog Block and the RTC (sub-block of the Analog Block). Table 2-54 decodes the ACM address space and maps it to the corresponding Analog Quad and configuration byte for that quad. Table 2-54 • ACM Address Decode Table for Analog Quad ACMADDR [7:0] in Decimal 0 1 2 3 4 5 . . . 36 37 38 39 40 41 . . . 63 64 65 66 67 68 72 COUNTER0 COUNTER1 COUNTER2 COUNTER3 COUNTER4 MATCHREG0 . . . Name – AQ0 AQ0 AQ0 AQ0 AQ1 . . . AQ8 AQ9 AQ9 AQ9 AQ9 Description – Byte 0 Byte 1 Byte 2 Byte 3 Byte 0 . . . Byte 3 Byte 0 Byte 1 Byte 2 Byte 3 Undefined Undefined Associated Peripheral Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Analog Quad Undefined Counter bits 7:0 Counter bits 15:8 Counter bits 23:16 Counter bits 31:24 Counter bits 39:32 Match register bits 7:0 RTC RTC RTC RTC RTC RTC RTC 2- 12 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-54 • ACM Address Decode Table for Analog Quad (continued) ACMADDR [7:0] in Decimal 73 74 75 76 80 81 82 83 84 88 Name MATCHREG1 MATCHREG2 MATCHREG3 MATCHREG4 MATCHBITS0 MATCHBITS1 MATCHBITS2 MATCHBITS3 MATCHBITS4 CTRL_STAT Description Match register bits 15:8 Match register bits 23:16 Match register bits 31:24 Match register bits 39:32 Individual match bits 7:0 Individual match bits 15:8 Individual match bits 23:16 Individual match bits 31:24 Individual match bits 39:32 Control (write) / Status (read) register bits 7:0 Associated Peripheral RTC RTC RTC RTC RTC RTC RTC RTC RTC RTC Note: ACMADDR bytes 1 to 40 pertain to the Analog Quads; bytes 64 to 89 pertain to the RTC. ACM Characteristics1 ACMCLK tSUEACM ACMWEN tSUDACM ACMWDATA tHDACM tHEACM D0 tSUAACM tHAACM D1 A1 ACMADDRESS A0 Figure 2-95 • ACM Write Waveform tMPWCLKACM ACMCLK ACMADDRESS A0 tCLKQACM A1 ACMRDATA RD0 RD1 Figure 2-96 • ACM Read Waveform 1. When addressing the RTC addresses (i.e., ACMADDR 64 to 89), there is no timing generator, and the rc_osc, byte_en, and aq_wen signals have no impact. Revision 2 2- 129 Device Architecture Timing Characteristics Table 2-55 • Analog Configuration Multiplexer (ACM) Timing Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tCLKQACM tSUDACM tHDACM tSUAACM tHAACM tSUEACM tHEACM tMPWARACM tREMARACM tRECARACM tMPWCLKACM tFMAXCLKACM Description Clock-to-Q of the ACM Data Setup time for the ACM Data Hold time for the ACM Address Setup time for the ACM Address Hold time for the ACM Enable Setup time for the ACM Enable Hold time for the ACM Asynchronous Reset Minimum Pulse Width for the ACM Asynchronous Reset Removal time for the ACM Asynchronous Reset Recovery time for the ACM Clock Minimum Pulse Width for the ACM lock Maximum Frequency for the ACM –2 19.73 4.39 0.00 4.73 0.00 3.93 0.00 10.00 12.98 12.98 45.00 10.00 –1 22.48 5.00 0.00 5.38 0.00 4.48 0.00 10.00 14.79 14.79 45.00 10.00 Std. 26.42 5.88 0.00 6.33 0.00 5.27 0.00 10.00 17.38 17.38 45.00 10.00 Units ns ns ns ns ns ns ns ns ns ns ns MHz 2- 13 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Analog Quad ACM Description Table 2-56 maps out the ACM space associated with configuration of the Analog Quads within the Analog Block. Table 2-56 shows the byte assignment within each quad and the function of each bit within each byte. Subsequent tables will explain each bit setting and how it corresponds to a particular configuration. After 3.3 V and 1.5 V are applied to Fusion, Analog Quad configuration registers are loaded with default settings until the initialization and configuration state machine changes them to userdefined settings. Table 2-56 • Analog Quad ACM Byte Assignment Byte Byte 0 (AV) Bit 0 1 2 3 4 5 6 7 Byte 1 (AC) 0 1 2 3 4 5 6 7 Byte 2 (AG) 0 1 2 3 4 5 6 7 Byte 3 (AT) 0 1 2 3 4 5 6 7 Signal (Bx) B0[0] B0[1] B0[2] B0[3] B0[4] B0[5] B0[6] B0[7] B1[0] B1[1] B1[2] B1[3] B1[4] B1[5] B1[6] B1[7] B2[0] B2[1] B2[2] B2[3] B2[4] B2[5] B2[6] B2[7] B3[0] B3[1] B3[2] B3[3] B3[4] B3[5] B3[6] B3[7] Direct analog input switch – Prescaler op amp mode Off – Power-down Analog MUX select Prescaler Spare Spare Selects G-pad polarity Selects low/high drive Scaling factor control – prescaler – – Positive Low drive Highest voltage range Direct analog input switch Selects C-pad polarity Prescaler op amp mode Spare Current drive control Off Positive Power-down – Lowest current Analog MUX select Prescaler Analog MUX select Current monitor switch Direct analog input switch Selects V-pad polarity Prescaler op amp mode Scaling factor control – prescaler Prescaler Off Off Positive Power-down Highest voltage range Function Scaling factor control – prescaler Default Setting Highest voltage range Internal chip temperature monitor * Off Note: *For the internal temperature monitor to function, Bit 0 of Byte 2 for all 10 Quads must be set. Revision 2 2- 131 Device Architecture Table 2-57 details the settings available to control the prescaler values of the AV, AC, and AT pins. Note that the AT pin has a reduced number of available prescaler values. Table 2-57 • Prescaler Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3) Scaling Factor, Pad to ADC Input 0.15625 0.3125 1 Control Lines Bx[2:0] 000 1 001 010 011 100 101 110 111 Notes: LSB for an 8-Bit Conversion2 (mV) 64 32 16 8 4 2 1 0.5 LSB for a 10-Bit Conversion2 (mV) 16 8 4 2 1 0.5 0.25 0.125 LSB for a 12-Bit Conversion2 (mV) 4 2 1 0.5 0.25 0.125 0.0625 0.03125 Full-Scale Voltage 16.368 V 8.184 V 4.092 V 2.046 V 1.023 V 0.5115 V 0.25575 V 0.127875 V Range Name 16 V 8V 4V 2V 1V 0.5 V 0.25 V 0.125 V 0.625 1.25 2.5 5.0 10.0 20.0 1. These are the only valid ranges for the Temperature Monitor Block Prescaler. 2. LSB voltage equivalences assume VAREF = 2.56 V. Table 2-58 details the settings available to control the MUX within each of the AV, AC, and AT circuits. This MUX determines whether the signal routed to the ADC is the direct analog input, prescaled signal, or output of either the Current Monitor Block or the Temperature Monitor Block. Table 2-58 • Analog Multiplexer Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3) Control Lines Bx[4] 0 0 1 1 Control Lines Bx[3] 0 1 0 1 Prescaler Direct input Current amplifier temperature monitor Not valid ADC Connected To Table 2-59 details the settings available to control the Direct Analog Input switch for the AV, AC, and AT pins. Table 2-59 • Direct Analog Input Switch Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3) Control Lines Bx[5] 0 1 Direct Input Switch Off On Table 2-60 details the settings available to control the polarity of the signals coming to the AV, AC, and AT pins. Note that the only valid setting for the AT pin is logic 0 to support positive voltages. Table 2-60 • Voltage Polarity Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)* Control Lines Bx[6] 0 1 Input Signal Polarity Positive Negative Note: *The B3[6] signal for the AT pad should be kept at logic 0 to accept only positive voltages. 2- 13 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-61 details the settings available to either power down or enable the prescaler associated with the analog inputs AV, AC, and AT. Table 2-61 • Prescaler Op Amp Power-Down Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3) Control Lines Bx[7] 0 1 Prescaler Op Amp Power-down Operational Table 2-62 details the settings available to enable the Current Monitor Block associated with the AC pin. Table 2-62 • Current Monitor Input Switch Control Truth Table—AV (x = 0) Control Lines B0[4] 0 1 Current Monitor Input Switch Off On Table 2-63 details the settings available to configure the drive strength of the gate drive when not in highdrive mode. Table 2-63 • Low-Drive Gate Driver Current Truth Table (AG) Control Lines B2[3] 0 0 1 1 Control Lines B2[2] 0 1 0 1 Current (µA) 1 3 10 30 Table 2-64 details the settings available to set the polarity of the gate driver (either p-channel- or n-channel-type devices). Table 2-64 • Gate Driver Polarity Truth Table (AG) Control Lines B2[6] 0 1 Gate Driver Polarity Positive Negative Table 2-65 details the settings available to turn on the Gate Driver and set whether high-drive mode is on or off. Table 2-65 • Gate Driver Control Truth Table (AG) Control Lines B2[7] 0 0 1 1 GDON 0 1 0 1 Gate Driver Off Low drive on Off High drive on Table 2-66 details the settings available to turn on and off the chip internal temperature monitor. Note: For the internal temperature monitor to function, Bit 0 of Byte 2 for all 10 Quads must be set. Table 2-66 • Internal Temperature Monitor Control Truth Table Control Lines B2[0] 0 1 PDTMB 0 1 Chip Internal Temperature Monitor Off On Revision 2 2- 133 Device Architecture User I/Os Introduction Fusion devices feature a flexible I/O structure, supporting a range of mixed voltages (1.5 V, 1.8 V, 2.5 V, and 3.3 V) through a bank-selectable voltage. Table 2-68, Table 2-69, Table 2-70, and Table 2-71 on page 2-137 show the voltages and the compatible I/O standards. I/Os provide programmable slew rates, drive strengths, weak pull-up, and weak pull-down circuits. 3.3 V PCI and 3.3 V PCI-X are 5 V–tolerant. See the "5 V Input Tolerance" section on page 2-146 for possible implementations of 5 V tolerance. All I/Os are in a known state during power-up, and any power-up sequence is allowed without current impact. Refer to the "I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial)" section on page 3-5 for more information. In low power standby or sleep mode (VCC is OFF, VCC33A is ON, VCCI is ON) or when the resource is not used, digital inputs are tristated, digital outputs are tristated, and digital bibufs (input/output) are tristated. I/O Tile The Fusion I/O tile provides a flexible, programmable structure for implementing a large number of I/O standards. In addition, the registers available in the I/O tile in selected I/O banks can be used to support high-performance register inputs and outputs, with register enable if desired (Figure 2-97 on page 2-135). The registers can also be used to support the JESD-79C DDR standard within the I/O structure (see the "Double Data Rate (DDR) Support" section on page 2-141 for more information). As depicted in Figure 2-98 on page 2-140, all I/O registers share one CLR port. The output register and output enable register share one CLK port. Refer to the "I/O Registers" section on page 2-140 for more information. I/O Banks and I/O Standards Compatibility The digital I/Os are grouped into I/O voltage banks. There are three digital I/O banks on the AFS090 and AFS250 devices and four digital I/O banks on the AFS600 and AFS1500 devices. Figure 2-111 on page 2-160 and Figure 2-112 on page 2-161 show the bank configuration by device. The north side of the I/O in the AFS600 and AFS1500 devices comprises two banks of Pro I/Os. The Pro I/Os support a wide number of voltage-referenced I/O standards in addition to the multitude of single-ended and differential I/O standards common throughout all Microsemi digital I/Os. Each I/O voltage bank has dedicated I/O supply and ground voltages (VCCI/GNDQ for input buffers and VCCI/GND for output buffers). Because of these dedicated supplies, only I/Os with compatible standards can be assigned to the same I/O voltage bank. Table 2-69 and Table 2-70 on page 2-136 show the required voltage compatibility values for each of these voltages. For more information about I/O and global assignments to I/O banks, refer to the specific pin table of the device in the "Package Pin Assignments" on page 4-1 and the "User I/O Naming Convention" section on page 2-160. Each Pro I/O bank is divided into minibanks. Any user I/O in a VREF minibank (a minibank is the region of scope of a VREF pin) can be configured as a VREF pin (Figure 2-97 on page 2-135). Only one VREF pin is needed to control the entire VREF minibank. The location and scope of the VREF minibanks can be determined by the I/O name. For details, see the "User I/O Naming Convention" section on page 2-160. Table 2-70 on page 2-136 shows the I/O standards supported by Fusion devices and the corresponding voltage levels. I/O standards are compatible if the following are true: • • Their VCCI values are identical. If both of the standards need a VREF, their VREF values must be identical (Pro I/O only). 2- 13 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs CCC Bank 0 CCC Bank 1 CCC Up to five VREF minibanks within an I/O bank VREF signal scope is between 8 and 18 I/Os. Common VREF signal for all I/Os in VREF minibanks GND GND VCC VCCI VCC VCCI Figure 2-97 • Fusion Pro I/O Bank Detail Showing VREF Minibanks (north side ofAFS600 and AFS1500) Table 2-67 • I/O Standards Supported by Bank Type I/O Bank Standard I/O Single-Ended I/O Standards LVTTL/LVCMOS 3.3 V, LVCMOS – 2.5 V / 1.8 V / 1.5 V, LVCMOS 2.5/5.0 V Differential I/O Standards – Voltage-Referenced HotSwap Yes Advanced I/O LVTTL/LVCMOS 3.3 V, LVCMOS LVPECL 2.5 V / 1.8 V / 1.5 V, LVCMOS LVDS 2.5/5.0 V, 3.3 V PCI / 3.3 V PCIX Pro I/O LVTTL/LVCMOS 3.3 V, LVCMOS LVPECL 2.5 V / 1.8 V / 1.5 V, LVCMOS LVDS 2.5/5.0 V, 3.3 V PCI / 3.3 V PCIX I/O I/O I/O Pad I/O I/O If needed, the VREF for a given minibank can be provided by any I/O within the minibank. Revision 2 I/O and – and GTL+ 2.5 V / 3.3 V, GTL 2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3 Class I and II I/O I/O I/O – Yes 2- 135 Device Architecture Table 2-68 • I/O Bank Support by Device I/O Bank Standard I/O Advanced I/O Pro I/O Analog Quad AFS090 N E, W – S AFS250 N E, W – S AFS600 – E, W N S AFS1500 – E, W N S Note: E = East side of the device W = West side of the device N = North side of the device S = South side of the device Table 2-69 • Fusion VCCI Voltages and Compatible Standards VCCI (typical) 3.3 V 2.5 V 1.8 V 1.5 V Compatible Standards LVTTL/LVCMOS 3.3, PCI 3.3, SSTL3 (Class I and II),* GTL+ 3.3, GTL 3.3,* LVPECL LVCMOS 2.5, LVCMOS 2.5/5.0, SSTL2 (Class I and II),* GTL+ 2.5,* GTL 2.5,* LVDS, BLVDS, MLVDS LVCMOS 1.8 LVCMOS 1.5, HSTL (Class I),* HSTL (Class II)* Note: *I/O standard supported by Pro I/O banks. Table 2-70 • Fusion VREF Voltages and Compatible Standards* VREF (typical) 1.5 V 1.25 V 1.0 V 0.8 V 0.75 V SSTL3 (Class I and II) SSTL2 (Class I and II) GTL+ 2.5, GTL+ 3.3 GTL 2.5, GTL 3.3 HSTL (Class I), HSTL (Class II) Compatible Standards Note: *I/O standards supported by Pro I/O banks. 2- 13 6 R e visio n 2 1.5 V I/O Bank Voltage (typical) – LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V 3.3 V PCI / PCI-X GTL + (3.3 V) GTL + (2.5 V) GTL (3.3 V) GTL (2.5 V) HSTL Class I and II (1.5 V) SSTL2 Class I and II (2.5 V) SSTL3 Class I and II (3.3 V) LVDS (2.5 V ± 5%) LVPECL (3.3 V) – – – 0.75 V LVTTL/LVCMOS 3.3 V 1.25 V 1.00 V 0.80 V 1.50 V 1.00 V 0.80 V Minibank Voltage (typical) 1.8 V 2.5 V 3.3 V Table 2-71 • Fusion Standard and Advanced I/O Features Note: White box: Allowable I/O standard combinations Gray box: Illegal I/O standard combinations Revision 2 Fusion Family of Mixed Signal FPGAs 2- 137 Device Architecture Features Supported on Pro I/Os Table 2-72 lists all features supported by transmitter/receiver for single-ended and differential I/Os. Table 2-72 • Fusion Pro I/O Features Feature Single-ended and voltage- • referenced transmitter features • • • • Description Hot insertion in every mode except PCI or 5 V input tolerant (these modes use clamp diodes and do not allow hot insertion) Activation of hot insertion (disabling the clamp diode) is selectable by I/Os. Weak pull-up and pull-down Two slew rates Skew between output buffer enable/disable time: 2 ns delay (rising edge) and 0 ns delay (falling edge); see "Selectable Skew between Output Buffer Enable/Disable Time" on page 2-151 for more information Five drive strengths 5 V–tolerant receiver ("5 V Input Tolerance" section on page 2-146) LVTTL/LVCMOS 3.3 V outputs compatible with 5 V TTL inputs ("5 V Output Tolerance" section on page 2-150) High performance (Table 2-76 on page 2-145) Schmitt trigger option ESD protection Programmable delay: 0 ns if bypassed, 0.625 ns with '000' setting, 6.575 ns with '111' setting, 0.85-ns intermediate delay increments (at 25°C, 1.5 V) High performance (Table 2-76 on page 2-145) Separate ground planes, GND/GNDQ, for input buffers only to avoid outputinduced noise in the input circuitry Programmable Delay: 0 ns if bypassed, 0.625 ns with '000' setting, 6.575 ns with '111' setting, 0.85-ns intermediate delay increments (at 25°C, 1.5 V) High performance (Table 2-76 on page 2-145) Separate ground planes, GND/GNDQ, for input buffers only to avoid outputinduced noise in the input circuitry Two I/Os and external resistors are used to provide a CMOS-style LVDS, BLVDS, M-LVDS, or LVPECL transmitter solution. Activation of hot insertion (disabling the clamp diode) is selectable by I/Os. Weak pull-up and pull-down Fast slew rate ESD protection High performance (Table 2-76 on page 2-145) Programmable delay: 0.625 ns with '000' setting, 6.575 ns with '111' setting, 0.85-ns intermediate delay increments (at 25°C, 1.5 V) Separate input buffer ground and power planes to avoid output-induced noise in the input circuitry • • • • Single-ended receiver features • • • • • Voltage-referenced receiver features differential • • • CMOS-style LVDS, M-LVDS, or LVPECL transmitter BLVDS, • • • • LVDS/LVPECL differential receiver features • • • • 2- 13 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-73 • Maximum I/O Frequency for Single-Ended, Voltage-Referenced, and Differential I/Os; All I/O Bank Types (maximum drive strength and high slew selected) Specification LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V PCI PCI-X HSTL-I HSTL-II SSTL2-I SSTL2-II SSTL3-I SSTL3-II GTL+ 3.3 V GTL+ 2.5 V GTL 3.3 V GTL 2.5 V LVDS LVPECL Performance Up To 200 MHz 250 MHz 200 MHz 130 MHz 200 MHz 200 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 350 MHz 300 MHz Revision 2 2- 139 Device Architecture I/O Registers Each I/O module contains several input, output, and enable registers. Refer to Figure 2-98 for a simplified representation of the I/O block. The number of input registers is selected by a set of switches (not shown in Figure 2-98) between registers to implement single or differential data transmission to and from the FPGA core. The Designer software sets these switches for the user. A common CLR/PRE signal is employed by all I/O registers when I/O register combining is used. Input register 2 does not have a CLR/PRE pin, as this register is used for DDR implementation. The I/O register combining must satisfy some rules. I/O / Q0 1 Input Reg 2 Input Reg Y Pull-Up/Down Resistor Control To FPGA Core I/O / Q1 CLR/PRE 3 Input Reg PAD ICE CLR/PRE I/O / ICLK Signal Drive Strength and Slew-Rate Control E = Enable Pin A I/O / D0 4 OCE Output Reg From FPGA Core I/O / D1 / ICE CLR/PRE 5 Output Reg ICE I/O / OCLK I/O / OE CLR/PRE 6 OCE Output Enable Reg CLR/PRE I/O / CLR or I/O / PRE / OCE Note: Fusion I/Os have registers to support DDR functionality (see the "Double Data Rate (DDR) Support" section on page 2-141 for more information). Figure 2-98 • I/O Block Logical Representation 2- 14 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Double Data Rate (DDR) Support Fusion Pro I/Os support 350 MHz DDR inputs and outputs. In DDR mode, new data is present on every transition of the clock signal. Clock and data lines have identical bandwidths and signal integrity requirements, making it very efficient for implementing very high-speed systems. DDR interfaces can be implemented using HSTL, SSTL, LVDS, and LVPECL I/O standards. In addition, high-speed DDR interfaces can be implemented using LVDS I/O. Input Support for DDR The basic structure to support a DDR input is shown in Figure 2-99. Three input registers are used to capture incoming data, which is presented to the core on each rising edge of the I/O register clock. Each I/O tile on Fusion devices supports DDR inputs. Output Support for DDR The basic DDR output structure is shown in Figure 2-100 on page 2-142. New data is presented to the output every half clock cycle. Note: DDR macros and I/O registers do not require additional routing. The combiner automatically recognizes the DDR macro and pushes its registers to the I/O register area at the edge of the chip. The routing delay from the I/O registers to the I/O buffers is already taken into account in the DDR macro. Refer to the application note Using DDR for Fusion Devices for more information. Input DDR A Data INBUF FF1 D Out_QF (to core) CLK CLKBUF B FF2 E Out_QR (to core) CLR INBUF C DDR_IN Figure 2-99 • DDR Input Register Support in Fusion Devices Revision 2 2- 141 Device Architecture Data_F (from core) CLK CLKBUF Data_R (from core) CLR INBUF A FF1 B C D FF2 B C 1 0 E OUTBUF Out DDR_OUT Figure 2-100 • DDR Output Support in Fusion Devices 2- 14 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Hot-Swap Support Hot-swapping (also called hot plugging) is the operation of hot insertion or hot removal of a card in (or from) a powered-up system. The levels of hot-swap support and examples of related applications are described in Table 2-74. The I/Os also need to be configured in hot insertion mode if hot plugging compliance is required. Table 2-74 • Levels of Hot-Swap Support Hot Power Swapping Applied Level Description to Device Bus State 1 Cold-swap No – Device Example of Card Circuitry Application with Ground Connected Cards that Contain Compliance of Connection to Bus Pins Fusion Devices Fusion Devices – – System and card with Microsemi FPGA chip are powered down, then card gets plugged into system, then power supplies are turned on for system but not for FPGA on card. In PCI hot plug specification, reset control circuitry isolates the card busses until the card supplies are at their nominal operating levels and stable. Board bus shared with card bus is "frozen," and there is no toggling activity on bus. It is critical that the logic states set on the bus signal do not get disturbed during card insertion/removal. There is activity on the system bus, and it is critical that the logic states set on the bus signal do not get disturbed during card insertion/removal. Compliant I/Os can but do not have to be set to hot insertion mode. 2 Hot-swap while reset Yes Held in Must be made – reset state and maintained for 1 ms before, during, and after insertion/ removal Held idle Same as (no ongoing Level 2 I/O processes during insertion/re moval) Must remain glitch-free during power-up or power-down Compliant I/Os can but do not have to be set to hot insertion mode. 3 Hot-swap while bus idle Yes Compliant with cards with two levels of staging. I/Os have to be set to hot insertion mode. 4 Hot-swap on an active bus Yes Bus may Same as have active Level 2 I/O processes ongoing, but device being inserted or removed must be idle. Same as Level 3 Compliant with cards with two levels of staging. I/Os have to be set to hot insertion mode. Revision 2 2- 143 Device Architecture For Fusion devices requiring Level 3 and/or Level 4 compliance, the board drivers connected to Fusion I/Os need to have 10 kΩ (or lower) output drive resistance at hot insertion, and 1 kΩ (or lower) output drive resistance at hot removal. This is the resistance of the transmitter sending a signal to the Fusion I/O, and no additional resistance is needed on the board. If that cannot be assured, three levels of staging can be used to meet Level 3 and/or Level 4 compliance. Cards with two levels of staging should have the following sequence: 1. Grounds 2. Powers, I/Os, other pins Cold-Sparing Support Cold-sparing means that a subsystem with no power applied (usually a circuit board) is electrically connected to the system that is in operation. This means that all input buffers of the subsystem must present very high input impedance with no power applied so as not to disturb the operating portion of the system. Pro I/O banks and standard I/O banks fully support cold-sparing. For Pro I/O banks, standards such as PCI that require I/O clamp diodes, can also achieve cold-sparing compliance, since clamp diodes get disconnected internally when the supplies are at 0 V. For Advanced I/O banks, since the I/O clamp diode is always active, cold-sparing can be accomplished either by employing a bus switch to isolate the device I/Os from the rest of the system or by driving each advanced I/O pin to 0 V. If Standard I/O banks are used in applications requiring cold-sparing, a discharge path from the power supply to ground should be provided. This can be done with a discharge resistor or a switched resistor. This is necessary because the standard I/O buffers do not have built-in I/O clamp diodes. If a resistor is chosen, the resistor value must be calculated based on decoupling capacitance on a given power supply on the board (this decoupling capacitor is in parallel with the resistor). The RC time constant should ensure full discharge of supplies before cold-sparing functionality is required. The resistor is necessary to ensure that the power pins are discharged to ground every time there is an interruption of power to the device. I/O cold-sparing may add additional current if the pin is configured with either a pull-up or pull down resistor and driven in the opposite direction. A small static current is induced on each IO pin when the pin is driven to a voltage opposite to the weak pull resistor. The current is equal to the voltage drop across the input pin divided by the pull resistor. Please refer to Table 2-95 on page 2-171, Table 2-96 on page 2-171, and Table 2-97 on page 2-173 for the specific pull resistor value for the corresponding I/O standard. For example, assuming an LVTTL 3.3 V input pin is configured with a weak Pull-up resistor, a current will flow through the pull-up resistor if the input pin is driven low. For an LVTTL 3.3 V, pull-up resistor is ~45 kΩ and the resulting current is equal to 3.3 V / 45 kΩ = 73 µA for the I/O pin. This is true also when a weak pull-down is chosen and the input pin is driven high. Avoiding this current can be done by driving the input low when a weak pull-down resistor is used, and driving it high when a weak pull-up resistor is used. In Active and Static modes, this current draw can occur in the following cases: • • • • • • • • Input buffers with pull-up, driven low Input buffers with pull-down, driven high Bidirectional buffers with pull-up, driven low Bidirectional buffers with pull-down, driven high Output buffers with pull-up, driven low Output buffers with pull-down, driven high Tristate buffers with pull-up, driven low Tristate buffers with pull-down, driven high 2- 14 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Electrostatic Discharge (ESD) Protection Fusion devices are tested per JEDEC Standard JESD22-A114-B. Fusion devices contain clamp diodes at every I/O, global, and power pad. Clamp diodes protect all device pads against damage from ESD as well as from excessive voltage transients. Each I/O has two clamp diodes. One diode has its positive (P) side connected to the pad and its negative (N) side connected to VCCI. The second diode has its P side connected to GND and its N side connected to the pad. During operation, these diodes are normally biased in the Off state, except when transient voltage is significantly above VCCI or below GND levels. By selecting the appropriate I/O configuration, the diode is turned on or off. Refer to Table 2-75 and Table 2-76 on page 2-145 for more information about I/O standards and the clamp diode. The second diode is always connected to the pad, regardless of the I/O configuration selected. Table 2-75 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V Input Tolerance Capabilities Clamp Diode I/O Assignment 3.3 V LVTTL/LVCMOS 3.3 V PCI, 3.3 V PCI-X LVCMOS 2.5 V LVCMOS 2.5 V / 5.0 V LVCMOS 1.8 V LVCMOS 1.5 V Differential, LVDS/BLVDS/MLVDS/ LVPECL 3 Notes: 1. Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor. 2. Can be implemented with an external resistor and an internal clamp diode. 3. Bidirectional LVPECL buffers are not supported. I/Os can be configured as either input buffers or output buffers. Hot Insertion 5 V Input Tolerance 1 Input Buffer Output Buffer Standard Advanced Standard Advanced Standard Advanced I/O I/O I/O I/O I/O I/O No N/A No N/A No No N/A Yes Yes Yes Yes Yes Yes Yes Yes N/A Yes N/A Yes Yes N/A No No No No No No No Yes1 N/A No N/A No No N/A Yes1 Yes 1 Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled No Yes2 No No No Table 2-76 • Fusion Pro I/O – Hot-Swap and 5 V Input Tolerance Capabilities I/O Assignment 3.3 V LVTTL/LVCMOS 3.3 V PCI, 3.3 V PCI-X LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V Voltage-Referenced Input Buffer Differential, LVDS/BLVDS/M-LVDS/LVPECL Notes: 1. Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor. 2. Can be implemented with an external resistor and an internal clamp diode. 3. In the SmartGen, FlashROM, Flash Memory System Builder, and Analog System Builder User's Guide, select the LVCMOS5 macro for the LVCMOS 2.5 V / 5.0 V I/O standard or the LVCMOS25 macro for the LVCMOS 2.5 V I/O standard. 4. Bidirectional LVPECL buffers are not supported. I/Os can be configured as either input buffers or output buffers. 4 3 3 Clamp Diode No Yes No Yes No No No No Hot Insertion Yes No Yes No Yes Yes Yes Yes 5 V Input Tolerance Yes 1 Input Buffer Output Buffer Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Enabled/Disabled Yes1 No Yes 2 LVCMOS 2.5 V / 5.0 V No No No No Revision 2 2- 145 Device Architecture 5 V Input Tolerance I/Os can support 5 V input tolerance when LVTTL 3.3 V, LVCMOS 3.3 V, LVCMOS 2.5 V / 5 V, and LVCMOS 2.5 V configurations are used (see Table 2-77 on page 2-149 for more details). There are four recommended solutions (see Figure 2-101 to Figure 2-104 on page 2-148 for details of board and macro setups) to achieve 5 V receiver tolerance. All the solutions meet a common requirement of limiting the voltage at the input to 3.6 V or less. In fact, the I/O absolute maximum voltage rating is 3.6 V, and any voltage above 3.6 V may cause long-term gate oxide failures. Solution 1 The board-level design needs to ensure that the reflected waveform at the pad does not exceed the limits provided in Table 3-4 on page 3-4. This is a long-term reliability requirement. This scheme will also work for a 3.3 V PCI / PCI-X configuration, but the internal diode should not be used for clamping, and the voltage must be limited by the two external resistors, as explained below. Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V. The following are some examples of possible resistor values (based on a simplified simulation model with no line effects and 10 Ω transmitter output resistance, where Rtx_out_high = (VCCI – VOH) / IOH, Rtx_out_low = VOL / IOL). Example 1 (high speed, high current): Rtx_out_high = Rtx_out_low = 10 Ω R1 = 36 Ω (±5%), P(r1)min = 0.069 Ω R2 = 82 Ω (±5%), P(r2)min = 0.158 Ω Imax_tx = 5.5 V / (82 * 0.95 + 36 * 0.95 + 10) = 45.04 mA tRISE = tFALL = 0.85 ns at C_pad_load = 10 pF (includes up to 25% safety margin) tRISE = tFALL = 4 ns at C_pad_load = 50 pF (includes up to 25% safety margin) Example 2 (low–medium speed, medium current): Rtx_out_high = Rtx_out_low = 10 Ω R1 = 220 Ω (±5%), P(r1)min = 0.018 Ω R2 = 390 Ω (±5%), P(r2)min = 0.032 Ω Imax_tx = 5.5 V / (220 * 0.95 + 390 * 0.95 + 10) = 9.17 mA tRISE = tFALL = 4 ns at C_pad_load = 10 pF (includes up to 25% safety margin) tRISE = tFALL = 20 ns at C_pad_load = 50 pF (includes up to 25% safety margin) Other values of resistors are also allowed as long as the resistors are sized appropriately to limit the voltage at the receiving end to 2.5 V < Vin(rx) < 3.6 V when the transmitter sends a logic 1. This range of Vin_dc(rx) must be assured for any combination of transmitter supply (5 V ± 0.5 V), transmitter output resistance, and board resistor tolerances. 2- 14 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Temporary overshoots are allowed according to Table 3-4 on page 3-4. Solution 1 Fusion I/O Input Off-Chip 5.5 V On-Chip 3.3 V Rext1 Rext2 Requires two board resistors, LVCMOS 3.3 V I/Os Figure 2-101 • Solution 1 Solution 2 The board-level design must ensure that the reflected waveform at the pad does not exceed limits provided in Table 3-4 on page 3-4. This is a long-term reliability requirement. This scheme will also work for a 3.3 V PCI/PCI-X configuration, but the internal diode should not be used for clamping, and the voltage must be limited by the external resistors and Zener, as shown in Figure 2102. Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V. Solution 2 Fusion I/O Input Off-Chip 5.5 V On-Chip 3.3 V Rext1 Zener 3.3 V Requires one board resistor, one Zener 3.3 V diode, LVCMOS 3.3 V I/Os Figure 2-102 • Solution 2 Revision 2 2- 147 Device Architecture Solution 3 The board-level design must ensure that the reflected waveform at the pad does not exceed limits provided in Table 3-4 on page 3-4. This is a long-term reliability requirement. This scheme will also work for a 3.3 V PCI/PCIX configuration, but the internal diode should not be used for clamping, and the voltage must be limited by the bus switch, as shown in Figure 2-103. Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V. Solution 3 Fusion I/O Input Off-Chip Bus Switch IDTQS32X23 5.5 V On-Chip 3.3 V 5.5 V Requires a bus switch on the board, LVTTL/LVCMOS 3.3 V I/Os. Figure 2-103 • Solution 3 Solution 4 Solution 4 Fusion I/O Input Off-Chip 5.5 V On-Chip 2.5 V On-Chip Clamp Diode 2.5 V Rext1 Requires one board resistor. Available for LVCMOS 2.5 V / 5.0 V. Figure 2-104 • Solution 4 2- 14 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-77 • Comparison Table for 5 V–Compliant Receiver Scheme Schem e 1 2 3 4 Board Components Two resistors Resistor and Zener 3.3 V Bus switch Minimum resistor value2 R = 47 Ω at TJ = 70°C R = 150 Ω at TJ = 85°C R = 420 Ω at TJ = 100°C Speed Low to high1 Current Limitations Limited by transmitter's drive strength Limited by transmitter's drive strength N/A Maximum diode current at 100% duty cycle, signal constantly at '1' 52.7 mA at TJ =70°C / 10-year lifetime 16.5 mA at TJ = 85°C / 10-year lifetime 5.9 mA at TJ = 100°C / 10-year lifetime For duty cycles other than 100%, the currents can be increased by a factor = 1 / (duty cycle). Example: 20% duty cycle at 70°C Maximum current = (1 / 0.2) * 52.7 mA = 5 * 52.7 mA = 263.5 mA Notes: 1. Speed and current consumption increase as the board resistance values decrease. 2. Resistor values ensure I/O diode long-term reliability. Medium High Medium Revision 2 2- 149 Device Architecture 5 V Output Tolerance Fusion I/Os must be set to 3.3 V LVTTL or 3.3 V LVCMOS mode to reliably drive 5 V TTL receivers. It is also critical that there be NO external I/O pull-up resistor to 5 V, since this resistor would pull the I/O pad voltage beyond the 3.6 V absolute maximum value and consequently cause damage to the I/O. When set to 3.3 V LVTTL or 3.3 V LVCMOS mode, Fusion I/Os can directly drive signals into 5 V TTL receivers. In fact, VOL = 0.4 V and VOH = 2.4 V in both 3.3 V LVTTL and 3.3 V LVCMOS modes exceed the VIL = 0.8 V and VIH = 2 V level requirements of 5 V TTL receivers. Therefore, level '1' and level '0' will be recognized correctly by 5 V TTL receivers. Simultaneously Switching Outputs and PCB Layout • Simultaneously switching outputs (SSOs) can produce signal integrity problems on adjacent signals that are not part of the SSO bus. Both inductive and capacitive coupling parasitics of bond wires inside packages and of traces on PCBs will transfer noise from SSO busses onto signals adjacent to those busses. Additionally, SSOs can produce ground bounce noise and VCCI dip noise. These two noise types are caused by rapidly changing currents through GND and VCCI package pin inductances during switching activities: Ground bounce noise voltage = L(GND) * di/dt VCCI dip noise voltage = L(VCCI) * di/dt • • Any group of four or more input pins switching on the same clock edge is considered an SSO bus. The shielding should be done both on the board and inside the package unless otherwise described. In-package shielding can be achieved in several ways; the required shielding will vary depending on whether pins next to SSO bus are LVTTL/LVCMOS inputs, LVTTL/LVCMOS outputs, or GTL/SSTL/HSTL/LVDS/LVPECL inputs and outputs. Board traces in the vicinity of the SSO bus have to be adequately shielded from mutual coupling and inductive noise that can be generated by the SSO bus. Also, noise generated by the SSO bus needs to be reduced inside the package. PCBs perform an important function in feeding stable supply voltages to the IC and, at the same time, maintaining signal integrity between devices. Key issues that need to considered are as follows: • • Power and ground plane design and decoupling network design Transmission line reflections and terminations 2- 15 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Selectable Skew between Output Buffer Enable/Disable Time The configurable skew block is used to delay the output buffer assertion (enable) without affecting deassertion (disable) time. Output Enable (from FPGA core) ENABLE (IN) ENABLE (OUT) MUX Skew Circuit I/O Output Buffers Skew Select Figure 2-105 • Block Diagram of Output Enable Path ENABLE (IN) ENABLE (OUT) Less than 0.1 ns Less than 0.1 ns Figure 2-106 • Timing Diagram (option1: bypasses skew circuit) ENABLE (IN) ENABLE (OUT) 1.2 ns (typical) Less than 0.1 ns Figure 2-107 • Timing Diagram (option 2: enables skew circuit) Revision 2 2- 151 Device Architecture At the system level, the skew circuit can be used in applications where transmission activities on bidirectional data lines need to be coordinated. This circuit, when selected, provides a timing margin that can prevent bus contention and subsequent data loss or transmitter overstress due to transmitter-totransmitter current shorts. Figure 2-108 presents an example of the skew circuit implementation in a bidirectional communication system. Figure 2-109 shows how bus contention is created, and Figure 2110 on page 2-153 shows how it can be avoided with the skew circuit. Transmitter 1: Fusion I/O Skew or Bypass Skew Routing Delay (t1) EN(b1) Transmitter ENABLE/ DISABLE Transmitter 2: Generic I/O EN(b2) Routing Delay (t2) EN(r1) ENABLE(t2) ENABLE(t1) Bidirectional Data Bus Figure 2-108 • Example of Implementation of Skew Circuits in Bidirectional Transmission Systems Using Fusion Devices EN (b1) EN (b2) ENABLE (r1) ENABLE (t1) Transmitter 1: OFF ENABLE (t2) Transmitter 2: ON Transmitter 1: ON Transmitter 1: OFF Transmitter 2: OFF Bus Contention Figure 2-109 • Timing Diagram (bypasses skew circuit) 2- 15 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs EN (b1) EN (b2) ENABLE (t1) Transmitter 1: OFF ENABLE (t2) Transmitter 1: ON Transmitter 1: OFF Transmitter 2: ON Transmitter 2: OFF Result: No Bus Contention Figure 2-110 • Timing Diagram (with skew circuit selected) Weak Pull-Up and Weak Pull-Down Resistors Fusion devices support optional weak pull-up and pull-down resistors for each I/O pin. When the I/O is pulled up, it is connected to the VCCI of its corresponding I/O bank. When it is pulled down, it is connected to GND. Refer to Table 2-97 on page 2-173 for more information. Slew Rate Control and Drive Strength Fusion devices support output slew rate control: high and low. The high slew rate option is recommended to minimize the propagation delay. This high-speed option may introduce noise into the system if appropriate signal integrity measures are not adopted. Selecting a low slew rate reduces this kind of noise but adds some delays in the system. Low slew rate is recommended when bus transients are expected. Drive strength should also be selected according to the design requirements and noise immunity of the system. The output slew rate and multiple drive strength controls are available in LVTTL/LVCMOS 3.3 V, LVCMOS 2.5 V, LVCMOS 2.5 V / 5.0 V input, LVCMOS 1.8 V, and LVCMOS 1.5 V. All other I/O standards have a high output slew rate by default. For Fusion slew rate and drive strength specifications, refer to the appropriate I/O bank table: • • • Fusion Standard I/O (Table 2-78 on page 2-154) Fusion Advanced I/O (Table 2-79 on page 2-154) Fusion Pro I/O (Table 2-80 on page 2-154) Table 2-83 on page 2-157 lists the default values for the above selectable I/O attributes as well as those that are preset for each I/O standard. Revision 2 2- 153 Device Architecture Refer to Table 2-78, Table 2-79, and Table 2-80 on page 2-154 for SLEW and OUT_DRIVE settings. Table 2-81 on page 2-155 and Table 2-82 on page 2-156 list the I/O default attributes. Table 2-83 on page 2-157 lists the voltages for the supported I/O standards. Table 2-78 • Fusion Standard I/O Standards—OUT_DRIVE Settings OUT_DRIVE (mA) I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V 2 4 6 8 Slew High High High High Low Low Low Low ✓ ✓ ✓ ✓ ✓ ✓ ✓ – ✓ ✓ – – ✓ ✓ – – Table 2-79 • Fusion Advanced I/O Standards—SLEW and OUT_DRIVE Settings OUT_DRIVE (mA) I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V 2 4 6 8 12 16 Slew High High High High Low Low Low Low ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ – ✓ ✓ ✓ – ✓ ✓ – – ✓ – – – Table 2-80 • Fusion Pro I/O Standards—SLEW and OUT_DRIVE Settings OUT_DRIVE (mA) I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 2.5 V/5.0 V LVCMOS 1.8 V LVCMOS 1.5 V 2 4 6 8 12 16 24 Slew High High High High High Low Low Low Low Low ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ – ✓ ✓ ✓ – – 2- 15 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-81 • Fusion Pro I/O Default Attributes SCHMITT_TRIGGER (input only) Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off 2- 155 SKEW (tribuf and bibuf only) I/O Standards LVTTL/LVCMO S 3.3 V LVCMOS 2.5 V LVCMOS 2.5/5.0 V LVCMOS 1.8 V LVCMOS 1.5 V PCI (3.3 V) PCI-X (3.3 V) GTL+ (3.3 V) GTL+ (2.5 V) GTL (3.3 V) GTL (2.5 V) HSTL Class I HSTL Class II SSTL2 Class I and II SSTL3 Class I and II LVDS, BLVDS, M-LVDS LVPECL SLEW (output only) Refer to the following tables for more information: Table 2-78 on page 2-154 Table 2-79 on page 2-154 Table 2-80 on page 2-154 OUT_DRIVE (output only) Refer to the following tables for more information: Table 2-78 on page 2-154 Table 2-79 on page 2-154 Table 2-80 on page 2-154 Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off None None None None None None None None None None None None None None None None None 35 pF 35 pF 35 pF 35 pF 35 pF 10 pF 10 pF 10 pF 10 pF 10 pF 10 pF 20 pF 20 pF 30 pF 30 pF 0 pF 0 pF – – – – – – – – – – – – – – – – – Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off Revision 2 IN_DELAY_VAL (input only) 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 OUT_LOAD (output only) IN_DELAY (input only) COMBINE_REGISTER RES_PULL Device Architecture Table 2-82 • Advanced I/O Default Attributes SKEW (tribuf and bibuf only) OUT_LOAD (output only) 35 pF 35 pF 35 pF 35 pF 35 pF 10 pF 10 pF – – I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 2.5/5.0 V LVCMOS 1.8 V LVCMOS 1.5 V PCI (3.3 V) PCI-X (3.3 V) LVDS, BLVDS, M-LVDS LVPECL SLEW (output only) Refer to the following tables for more information: Table 2-78 on page 2-154 Table 2-79 on page 2-154 Table 2-80 on page 2-154 OUT_DRIVE (output only) Refer to the following tables for more information: Table 2-78 on page 2-154 Table 2-79 on page 2-154 Table 2-80 on page 2-154 Off Off Off Off Off Off Off Off Off None None None None None None None None None – – – – – – – – – 2- 15 6 R e visio n 2 COMBINE_REGISTER RES_PULL Fusion Family of Mixed Signal FPGAs Table 2-83 • Fusion Pro I/O Supported Standards and Corresponding VREF and VTT Voltages I/O Standard LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 2.5 V / 5.0 V Input LVCMOS 1.8 V LVCMOS 1.5 V PCI 3.3 V PCI-X 3.3 V GTL+ 3.3 V GTL+ 2.5 V GTL 3.3 V GTL 2.5 V HSTL Class I HSTL Class II SSTL3 Class I SSTL3 Class II SSTL2 Class I SSTL2 Class II LVDS, BLVDS, M-LVDS LVPECL Input/Output Supply Voltage (VCCI_TYP) 3.30 V 2.50 V 2.50 V 1.80 V 1.50 V 3.30 V 3.30 V 3.30 V 2.50 V 3.30 V 2.50 V 1.50 V 1.50 V 3.30 V 3.30 V 2.50 V 2.50 V 2.50 V 3.30 V Input Reference Voltage (VREF_TYP) – – – – – – – 1.00 V 1.00 V 0.80 V 0.80 V 0.75 V 0.75 V 1.50 V 1.50 V 1.25 V 1.25 V – – Board Termination Voltage (VTT_TYP) – – – – – – – 1.50 V 1.50 V 1.20 V 1.20 V 0.75 V 0.75 V 1.50 V 1.50 V 1.25 V 1.25 V – – Revision 2 2- 157 Device Architecture I/O Software Support In the Fusion development software, default settings have been defined for the various I/O standards supported. Changes can be made to the default settings via the use of attributes; however, not all I/O attributes are applicable for all I/O standards. Table 2-84 and Table 2-85 list the valid I/O attributes that can be manipulated by the user for each I/O standard. Single-ended I/O standards in Fusion support up to five different drive strengths. Table 2-84 • Fusion Standard and Advanced I/O Attributes vs. I/O Standard Applications SLEW SKEW (output OUT_DRIVE (all macros OUT_LOAD only) (output only) with OE)* RES_PULL (output only) COMBINE_REGISTER I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 2.5/5.0 V LVCMOS 1.8 V LVCMOS 1.5 V PCI (3.3 V) PCI-X (3.3 V) LVDS, BLVDS, M-LVDS LVPECL ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ Note: *This feature does not apply to the standard I/O banks, which are the north I/O banks of AFS090 and AFS250 devices 2- 15 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-85 • Fusion Pro I/O Attributes vs. I/O Standard Applications SCHMITT_TRIGGER (input only) IN_DELAY_VAL (input only) SKEW (all macros with OE) OUT_DRIVE (output only) OUT_LOAD (output only) IN_DELAY (input only) COMBINE_REGISTER SLEW (output only) I/O Standards LVTTL/LVCMOS 3.3 V LVCMOS 2.5 V LVCMOS 2.5/5.0 V LVCMOS 1.8 V LVCMOS 1.5 V PCI (3.3 V) PCI-X (3.3 V) GTL+ (3.3 V) GTL+ (2.5 V) GTL (3.3 V) GTL (2.5 V) HSTL Class I HSTL Class II SSTL2 Class I and II SSTL3 Class I and II LVDS, BLVDS, M-LVDS LVPECL ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ Revision 2 2- 159 HOT_SWAPPABLE RES_PULL Device Architecture User I/O Naming Convention Due to the comprehensive and flexible nature of Fusion device user I/Os, a naming scheme is used to show the details of the I/O (Figure 2-111 on page 2-160 and Figure 2-112 on page 2-161). The name identifies to which I/O bank it belongs, as well as the pairing and pin polarity for differential I/Os. I/O Nomenclature = Gmn/IOuxwByVz Gmn is only used for I/Os that also have CCC access—i.e., global pins. G m n u x = Global = Global pin location associated with each CCC on the device: A (northwest corner), B (northeast corner), C (east middle), D (southeast corner), E (southwest corner), and F (west middle). = Global input MUX and pin number of the associated Global location m, either A0, A1, A2, B0, B1, B2, C0, C1, or C2. Figure 2-22 on page 2-27 shows the three input pins per clock source MUX at CCC location m. = I/O pair number in the bank, starting at 00 from the northwest I/O bank and proceeding in a clockwise direction. = P (Positive) or N (Negative) for differential pairs, or R (Regular – single-ended) for the I/Os that support singleended and voltage-referenced I/O standards only. U (Positive-LVDS only) or V (Negative-LVDS only) restrict the I/O differential pair from being selected as an LVPECL pair. = D (Differential Pair), P (Pair), or S (Single-Ended). D (Differential Pair) if both members of the pair are bonded out to adjacent pins or are separated only by one GND or NC pin; P (Pair) if both members of the pair are bonded out but do not meet the adjacency requirement; or S (Single-Ended) if the I/O pair is not bonded out. For Differential (D) pairs, adjacency for ball grid packages means only vertical or horizontal. Diagonal adjacency does not meet the requirements for a true differential pair. = Bank = Bank number (0–3). The Bank number starts at 0 from the northwest I/O bank and proceeds in a clockwise direction. = Reference voltage = Minibank number w B y V z Standard I/O Bank CCC "A" Bank 0 CCC "B" Advanced I/O Bank Bank 3 Bank 1 Advanced I/O Bank CCC/PLL "F" AFS090 AFS250 CCC "C" Bank 3 Bank 1 CCC "E" Bank 2 (analog) CCC "D" Analog Quads Figure 2-111 • Naming Conventions of Fusion Devices with Three Digital I/O Banks 2- 16 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Pro I/O Bank CCC "A" Bank 0 Bank 1 CCC "B" Advanced I/O Bank Bank 4 Bank 2 Advnaced I/O Bank CCC/PLL "F" AFS600 AFS1500 CCC/PLL "C" Bank 4 Bank 2 CCC "E" Bank 3 (analog) CCC "D" Analog Quads Figure 2-112 • Naming Conventions of Fusion Devices with Four I/O Banks Revision 2 2- 161 Device Architecture User I/O Characteristics Timing Model I/O Module (Non-Registered) Combinational Cell Y tPD = 0.56 ns Combinational Cell Y tPD = 0.49 ns tDp = 1.60 ns I/O Module (Non-Registered) LVPECL (Pro IO banks) Combinational Cell Y LVTTL/LVCMOS 3.3 V (Pro I/O banks) tDP = 2.74 ns Output drive strength = 12 mA High slew rate tPD = 0.87 ns I/O Module Combinational Cell (Non-Registered) I/O Module (Registered) tPY = 1.22 ns LVPECL (Pro IO Banks) D Q Combinational Cell Y Input LVTTL/LVCMOS 3.3 V (Pro IO banks) tICLKQ = 0.24 ns tISUD = 0.26 ns tPD = 0.47 ns Y LVTTL/LVCMOS 3.3 V (Pro I/O banks) Output drive strength = 24 mA tDP = 2.39 ns High slew rate tPD = 0.51 ns I/O Module (Non-Registered) LVCMOS 1.5 V (Pro IO banks) Output drive strength = 12 mA tDP = 3.30 ns High slew I/O Module (Registered) D Q GTL+ 3.3 V tDP = 1.53 ns tCLKQ = 0.55 ns tSUD = 0.43 ns IInput LVTTL/LVCMOS 3.3 V (Pro IO banks) tPY = 0.90 ns tOCLKQ = 0.59 ns tOSUD = 0.31 ns tPY = 0.90 ns I/O Module (Non-Registered) LVDS, BLVDS, M-LVDS (Pro IO Banks) tPY = 1.36 ns Register Cell Combinational Cell D Q Y tPD = 0.47 ns tCLKQ = 0.55 ns tSUD = 0.43 ns Input LVTTL/LVCMOS 3.3 V (Pro IO banks) tPY = 0.90 ns Register Cell D Q Figure 2-113 • Timing Model Operating Conditions: –2 Speed, Commercial Temperature Range (TJ = 70°C), Worst-Case VCC = 1.425 V 2- 16 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs tPY tPYS PAD D Y tDIN Q DIN To Array CLK tPY = MAX(tPY (R), tPY (F)) tPYs = MAX(tPYS (R), tPYS (F)) tDIN = MAX(tDIN (R), tDIN (F)) I/O interface VIH Vtrip Vtrip VCC 50% Y GND tPY (R) tPYS (R) tPY (F) tPYS (F) VCC 50% DIN GND tDIN (R) tDIN (F) 50% 50% PAD VIL Figure 2-114 • Input Buffer Timing Model and Delays (example) Revision 2 2- 163 Device Architecture tDOUT DQ D From Array I/O Interface tDOUT (R) D 50% VCC 50% VCC 50% 50% VOH Vtrip PAD tDP (R) Figure 2-115 • Output Buffer Model and Delays (example) tDP DOUT PAD Std Load tDP = MAX(tDP(R), tDP(F)) tDOUT = MAX(tDOUT(R), tDOUT(F)) tDOUT (F) 0V CLK DOUT 0V Vtrip tDP (F) VOL 2- 16 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs tEOUT DQ E CLK tZL, tZH, tHZ, tLZ, tZLS, tZHS EOUT DQ D CLK tEOUT = MAX(tEOUT (R). tEOUT (F)) VCC D VCC E 50% tEOUT (R) 50% tZL DOUT PAD I/O Interface 50% tEOUT (F) VCC 50% tHZ tZH EOUT PAD 50% VCCI Vtrip 50% tLZ Vtrip 90% VCCI VOL 10% VCCI VCC D VCC E 50% tEOUT (R) 50% tZLS Vtrip VOL 50% VCC tEOUT (F) 50% VOH 50% tZHS Vtrip EOUT PAD Figure 2-116 • Tristate Output Buffer Timing Model and Delays (example) Revision 2 2- 165 Device Architecture Overview of I/O Performance Summary of I/O DC Input and Output Levels – Default I/O Software Settings Table 2-86 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions Applicable to Pro I/Os VIL I/O Standard 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI 3.3 V PCI-X 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) Notes: 1. Currents are measured at 85°C junction temperature. 2. Output drive strength is below JEDEC specification. 3. Output slew rate can be extracted by the IBIS models. VIH Min. V 2 1.7 0.65 * VCCI 0.65 * VCCI Max. V 3.6 3.6 3.6 3.6 VOL Max. V 0.4 0.7 0.45 VOH Min. V 2.4 1.7 VCCI – 0.45 IOL IOH mA mA 12 12 12 12 12 12 12 Drive Slew Min. Strength Rate V 12 mA 12 mA 12 mA 12 mA High –0.3 High –0.3 High –0.3 High –0.3 Max. V 0.8 0.7 0.35 * VCCI 0.35 * VCCI 0.25 * VCCI 0.75 * VCCI 12 Per PCI Specification Per PCI-X Specification 25 25 mA2 mA2 High –0.3 VREF – 0.05 VREF + 0.05 High –0.3 VREF – 0.05 VREF + 0.05 High –0.3 High –0.3 High –0.3 High –0.3 High –0.3 High –0.3 High –0.3 High –0.3 VREF – 0.1 VREF – 0.1 VREF – 0.1 VREF – 0.1 VREF – 0.2 VREF – 0.2 VREF – 0.2 VREF – 0.2 VREF + 0.1 VREF + 0.1 VREF + 0.1 VREF + 0.1 VREF + 0.2 VREF + 0.2 VREF + 0.2 VREF + 0.2 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 0.4 0.4 0.6 0.6 0.4 0.4 0.54 0.35 0.7 0.5 – – – – VCCI – 0.4 VCCI – 0.4 VCCI – 0.62 VCCI – 0.43 VCCI – 1.1 VCCI – 0.9 25 25 51 40 8 15 15 18 14 21 25 25 51 40 8 15 15 18 14 21 35 mA 33 mA 8 mA 15 mA2 15 mA 18 mA 14 mA 21 mA Table 2-87 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions Applicable to Advanced I/Os VIL I/O Standard 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI 3.3 V PCI-X Drive Slew Strength Rate 12 mA 12 mA 12 mA 12 mA High High High High Min. V –0.3 –0.3 –0.3 –0.3 Max. V 0.8 0.7 VIH Min. V 2 1.7 Max. V 3.6 2.7 1.9 VOL Max. V 0.4 0.7 0.45 VOH Min. V 2.4 1.7 VCCI – 0.45 IOL IOH mA 12 12 12 12 mA 12 12 12 12 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI Per PCI specifications Per PCI-X specifications Note: Currents are measured at 85°C junction temperature. 2- 16 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-88 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions Applicable to Standard I/Os VIL I/O Standard 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS Drive Strength 8 mA 8 mA 4 mA 2 mA Slew Rate High High High High Min. V –0.3 –0.3 –0.3 –0.3 Max. V 0.8 0.7 VIH Min. V 2 1.7 Max. V 3.6 3.6 3.6 3.6 VOL Max. V 0.4 0.7 0.45 VOH Min. V 2.4 1.7 VCCI – 0.45 IOL IOH mA mA 8 8 4 2 8 8 4 2 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.25 * VCCI 0.75 * VCCI Note: Currents are measured at 85°C junction temperature. Table 2-89 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial Conditions Applicable to All I/O Bank Types Commercial1 IIL3 DC I/O Standards 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI 3.3 V PCI-X 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) Notes: 1. 2. 3. 4. Commercial range (0°C < TJ < 85°C) Industrial range (–40°C < TJ < 100°C) IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. Industrial2 IIH4 µA 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 IIL3 µA 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 IIH4 µA 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 µA 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Revision 2 2- 167 Device Architecture Summary of I/O Timing Characteristics – Default I/O Software Settings Table 2-90 • Summary of AC Measuring Points Applicable to All I/O Bank Types Standard 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI 3.3 V PCI-X 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) LVDS LVPECL Table 2-91 • I/O AC Parameter Definitions Parameter tDP tPY tDOUT tEOUT tDIN tPYS tHZ tZH tLZ tZL tZHS tZLS Data to Pad delay through the Output Buffer Pad to Data delay through the Input Buffer with Schmitt trigger disabled Data to Output Buffer delay through the I/O interface Enable to Output Buffer Tristate Control delay through the I/O interface Input Buffer to Data delay through the I/O interface Pad to Data delay through the Input Buffer with Schmitt trigger enabled Enable to Pad delay through the Output Buffer—High to Z Enable to Pad delay through the Output Buffer—Z to High Enable to Pad delay through the Output Buffer—Low to Z Enable to Pad delay through the Output Buffer—Z to Low Enable to Pad delay through the Output Buffer with delayed enable—Z to High Enable to Pad delay through the Output Buffer with delayed enable—Z to Low Definition Input Reference Voltage (VREF_TYP) – – – – – – 0.8 V 0.8 V 1.0 V 1.0 V 0.75 V 0.75 V 1.25 V 1.25 V 1.5 V 1.5 V – – Board Termination Voltage (VTT_REF) – – – – – – 1.2 V 1.2 V 1.5 V 1.5 V 0.75 V 0.75 V 1.25 V 1.25 V 1.485 V 1.485 V – – Measuring Trip Point (Vtrip) 1.4 V 1.2 V 0.90 V 0.75 V 0.285 * VCCI (RR) 0.615 * VCCI (FF)) 0.285 * VCCI (RR) 0.615 * VCCI (FF) VREF VREF VREF VREF VREF VREF VREF VREF VREF VREF Cross point Cross point 2- 16 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-92 • Summary of I/O Timing Characteristics – Software Default Settings Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = I/O Standard Dependent Applicable to Pro I/Os External Resistor (Ohm) Capacitive Load (pF) Drive Strength (mA) Slew Rate t DOUT tEOUT I/O Standard 3.3 V LVTTL/ 12 mA High 35 3.3 V LVCMOS 2.5 V LVCMOS 12 mA High 35 1.8 V LVCMOS 12 mA High 35 1.5 V LVCMOS 12 mA High 35 3.3 V PCI Per PCI spec – – – – 0.49 2.74 0.03 0.90 1.17 0.32 2.79 2.14 2.45 2.70 4.46 3.81 ns 0.49 2.80 0.03 1.13 1.24 0.32 2.85 2.61 2.51 2.61 4.52 4.28 ns 0.49 2.83 0.03 1.08 1.42 0.32 2.89 2.31 2.79 3.16 4.56 3.98 ns 0.49 3.30 0.03 1.27 1.60 0.32 3.36 2.70 2.96 3.27 5.03 4.37 ns High 10 25 2 0.49 2.09 0.03 0.78 1.25 0.32 2.13 1.49 2.45 2.70 3.80 3.16 ns 3.3 V PCI-X Per High 10 25 2 0.49 2.09 0.03 0.77 1.17 0.32 2.13 1.49 2.45 2.70 3.80 3.16 ns PCI-X spec 25 mA High 10 25 mA High 10 35 mA High 10 33 mA High 10 8 mA High 20 25 0.49 1.55 0.03 2.19 25 0.49 1.59 0.03 1.83 25 0.49 1.53 0.03 1.19 25 0.49 1.65 0.03 1.13 50 0.49 2.37 0.03 1.59 25 0.49 2.26 0.03 1.59 50 0.49 1.59 0.03 1.00 25 0.49 1.62 0.03 1.00 50 0.49 1.72 0.03 0.93 25 0.49 1.54 0.03 0.93 – – 0.49 1.57 0.03 1.36 0.49 1.60 0.03 1.22 – – – – – – – – – – – – 0.32 1.52 1.55 0.00 0.00 3.19 3.22 ns 0.32 1.61 1.59 0.00 0.00 3.28 3.26 ns 0.32 1.56 1.53 0.00 0.00 3.23 3.20 ns 0.32 1.68 1.57 0.00 0.00 3.35 3.24 ns 0.32 2.42 2.35 0.00 0.00 4.09 4.02 ns 0.32 2.30 2.03 0.00 0.00 3.97 3.70 ns 0.32 1.62 1.38 0.00 0.00 3.29 3.05 ns 0.32 1.65 1.32 0.00 0.00 3.32 2.99 ns 0.32 1.75 1.37 0.00 0.00 3.42 3.04 ns 0.32 1.57 1.25 0.00 0.00 3.24 2.92 ns – – – – – – – – – – – – – – ns ns 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) LVDS LVPECL Notes: 15 mA High 20 17 mA High 30 21 mA High 30 16 mA High 30 24 mA High 30 24 mA High 24 mA High – – 1. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values. 2. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-121 on page 2-199 for connectivity. This resistor is not required during normal operation. Revision 2 2- 169 Units tPYS tZHS tZLS tDIN tDP tPY tZH tHZ tZL tLZ Device Architecture Table 2-93 • Summary of I/O Timing Characteristics – Software Default Settings Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = I/O Standard Dependent Applicable to Advanced I/Os External Resistor (Ohm) Capacitive Load (pF) Drive Strength (mA) Slew Rate t DOUT tEOUT I/O Standard 3.3 V LVTTL/ 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI 3.3 V PCI-X LVDS LVPECL Notes: 12 mA 12 mA 12 mA 12 mA Per PCI spec High 35 pF High 35 pF High 35 pF High 35 pF – – – – 0.49 2.64 0.03 0.90 0.32 2.69 2.11 2.40 2.68 4.36 3.78 ns 0.49 2.66 0.03 0.98 0.32 2.71 2.56 2.47 2.57 4.38 4.23 ns 0.49 2.64 0.03 0.91 0.32 2.69 2.27 2.76 3.05 4.36 3.94 ns 0.49 3.05 0.03 1.07 0.32 3.10 2.67 2.95 3.14 4.77 4.34 ns High 10 pF 25 2 0.49 2.00 0.03 0.65 0.32 2.04 1.46 2.40 2.68 3.71 3.13 ns Per PCI-X High 10 pF 25 2 0.49 2.00 0.03 0.62 0.32 2.04 1.46 2.40 2.68 3.71 3.13 ns spec 24 mA 24 mA High High – – – – 0.49 1.37 0.03 1.20 N/A 0.49 1.34 0.03 1.05 N/A N/A N/A N/A N/A N/A N/A N/A N/A ns N/A N/A N/A N/A ns 1. For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values. 2. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-121 on page 2-199 for connectivity. This resistor is not required during normal operation. Table 2-94 • Summary of I/O Timing Characteristics – Software Default Settings Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = I/O Standard Dependent Applicable to Standard I/Os External Resistor (Ohm) Capacitive Load (pF) Drive Strength (mA) Slew Rate t DOUT tEOUT I/O Standard 3.3 V LVTTL/ 8 mA 3.3 V LVCMOS 2.5 V LVCMOS 8 mA 1.8 V LVCMOS 4 mA 1.5 V LVCMOS 2 mA High High High High 35 pF 35pF 35pF 35pF – – – – 0.49 3.29 0.03 0.49 3.56 0.03 0.49 4.74 0.03 0.49 5.71 0.03 0.75 0.96 0.90 1.06 0.32 0.32 0.32 0.32 3.36 3.40 4.02 4.71 2.80 3.56 4.74 5.71 1.79 1.78 1.80 1.83 2.01 1.91 1.85 1.83 ns ns ns ns Note: For specific junction temperature and voltage-supply levels, refer to Table 3-6 on page 3-7 for derating values. 2- 17 0 R e visio n 2 Units tDIN tDP tPY tZH tHZ tZL tLZ Units tZHS tZLS tDIN tDP tPY tZH tHZ tZL tLZ Fusion Family of Mixed Signal FPGAs Detailed I/O DC Characteristics Table 2-95 • Input Capacitance Symbol CIN CINCLK Definition Input capacitance Input capacitance on the clock pin Conditions VIN = 0, f = 1.0 MHz VIN = 0, f = 1.0 MHz Min. Max. 8 8 Units pF pF Table 2-96 • I/O Output Buffer Maximum Resistances 1 Standard Applicable to Pro I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 4 mA 8 mA 12 mA 16 mA 24 mA 2.5 V LVCMOS 4 mA 8 mA 12 mA 16 mA 24 mA 1.8 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 1.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 3.3 V PCI/PCI-X 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/techdocs/models/ibis.html. 2. R(PULL-DOWN-MAX) = VOLspec / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec Drive Strength RPULL-DOWN (ohms) 2 100 50 25 17 11 100 50 25 20 11 200 100 50 50 20 20 200 100 67 33 33 25 11 14 12 15 RPULL-UP (ohms) 3 300 150 75 50 33 200 100 50 40 22 225 112 56 56 22 22 224 112 75 37 37 75 – – – – Per PCI/PCI-X specification 25 mA 25 mA 35 mA 33 mA Revision 2 2- 171 Device Architecture Table 2-96 • I/O Output Buffer Maximum Resistances 1 (continued) Standard HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) Applicable to Advanced I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 2.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 1.8 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 1.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 3.3 V PCI/PCI-X Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/techdocs/models/ibis.html. 2. R(PULL-DOWN-MAX) = VOLspec / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec Drive Strength 8 mA 15 mA 17 mA 21 mA 16 mA 24 mA RPULL-DOWN (ohms) 2 50 25 27 13 44 18 100 100 50 50 25 17 11 100 100 50 50 25 20 11 200 100 50 50 20 20 200 100 67 33 33 25 RPULL-UP (ohms) 3 50 25 31 15 69 32 300 300 150 150 75 50 33 200 200 100 100 50 40 22 225 112 56 56 22 22 224 112 75 37 37 75 Per PCI/PCI-X specification 2- 17 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-96 • I/O Output Buffer Maximum Resistances 1 (continued) Standard Applicable to Standard I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 4 mA 6 mA 8 mA 2.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 1.8 V LVCMOS 1.5 V LVCMOS Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCC, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/techdocs/models/ibis.html. 2. R(PULL-DOWN-MAX) = VOLspec / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec Drive Strength RPULL-DOWN (ohms) 2 100 100 50 50 100 100 50 50 200 100 200 RPULL-UP (ohms) 3 300 300 150 150 200 200 100 100 225 112 224 2 mA 4 mA 2 mA Table 2-97 • I/O Weak Pull-Up/Pull-Down Resistances Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values R(WEAK PULL-UP)1 (ohms) VCCI 3.3 V 2.5 V 1.8 V 1.5 V Notes: 1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / IWEAK PULL-UP-MIN 2. R(WEAK PULL-DOWN-MAX) = VOLspec / IWEAK PULL-DOWN-MIN R(WEAK PULL-DOWN)2 (ohms) Max. 45 k 55 k 70 k 90 k Min. 10 k 12 k 17 k 19 k Max. 45 k 74 k 110 k 140 k Min. 10 k 11 k 18 k 19 k Revision 2 2- 173 Device Architecture Table 2-98 • I/O Short Currents IOSH/IOSL Drive Strength Applicable to Pro I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 4 mA 8 mA 12 mA 16 mA 24 mA 2.5 V LVCMOS 4 mA 8 mA 12 mA 16 mA 24 mA 1.8 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 1.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA Applicable to Advanced I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 3.3 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA Note: *TJ = 100°C 25 25 51 51 103 132 268 25 25 51 51 103 132 268 27 27 54 54 109 127 181 27 27 54 54 109 127 181 25 51 103 132 268 16 32 65 83 169 9 17 35 45 91 91 13 25 32 66 66 27 54 109 127 181 18 37 74 87 124 11 22 44 51 74 74 16 33 39 55 55 IOSH (mA)* IOSL (mA)* 2- 17 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-98 • I/O Short Currents IOSH/IOSL (continued) Drive Strength 2.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 1.8 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 1.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 12 mA 3.3 V PCI/PCI-X Applicable to Standard I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 4 mA 6 mA 8 mA 2.5 V LVCMOS 2 mA 4 mA 6 mA 8 mA 1.8 V LVCMOS 1.5 V LVCMOS Note: *TJ = 100°C The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The reliability data below is based on a 3.3 V, 36 mA I/O setting, which is the worst case for this type of analysis. For example, at 100°C, the short current condition would have to be sustained for more than six months to cause a reliability concern. The I/O design does not contain any short circuit protection, but such protection would only be needed in extremely prolonged stress conditions. 2 mA 4 mA 2 mA 25 25 51 51 16 16 32 32 9 17 13 27 27 54 54 18 18 37 37 11 22 16 Per PCI/PCI-X specification IOSH (mA)* 16 16 32 32 65 83 169 9 17 35 45 91 91 13 25 32 66 66 103 IOSL (mA)* 18 18 37 37 74 87 124 11 22 44 51 74 74 16 33 39 55 55 109 Revision 2 2- 175 Device Architecture Table 2-99 • Short Current Event Duration before Failure Temperature –40°C 0°C 25°C 70°C 85°C 100°C Time before Failure >20 years >20 years >20 years 5 years 2 years 6 months Table 2-100 • Schmitt Trigger Input Hysteresis Hysteresis Voltage Value (typ.) for Schmitt Mode Input Buffers Input Buffer Configuration 3.3 V LVTTL/LVCMOS/PCI/PCI-X (Schmitt trigger mode) 2.5 V LVCMOS (Schmitt trigger mode) 1.8 V LVCMOS (Schmitt trigger mode) 1.5 V LVCMOS (Schmitt trigger mode) Table 2-101 • I/O Input Rise Time, Fall Time, and Related I/O Reliability Input Buffer LVTTL/LVCMOS (Schmitt trigger disabled) LVTTL/LVCMOS (Schmitt trigger enabled) HSTL/SSTL/GTL LVDS/BLVDS/M-LVDS/LVPECL Input Rise/Fall Time (min.) No requirement No requirement Input Rise/Fall Time (max.) 10 ns* Reliability 20 years (100°C) Hysteresis Value (typ.) 240 mV 140 mV 80 mV 60 mV No requirement, but input 20 years (100°C) noise voltage cannot exceed Schmitt hysteresis 10 ns* 10 ns* 10 years (100°C) 10 years (100°C) No requirement No requirement Note: *The maximum input rise/fall time is related only to the noise induced into the input buffer trace. If the noise is low, the rise time and fall time of input buffers, when Schmitt trigger is disabled, can be increased beyond the maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise. Microsemi recommends signal integrity evaluation/characterization of the system to ensure there is no excessive noise coupling into input signals. 2- 17 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Single-Ended I/O Characteristics 3.3 V LVTTL / 3.3 V LVCMOS Low-Voltage Transistor–Transistor Logic is a general-purpose standard (EIA/JESD) for 3.3 V applications. It uses an LVTTL input buffer and push-pull output buffer. The 3.3 V LVCMOS standard is supported as part of the 3.3 V LVTTL support. Table 2-102 • Minimum and Maximum DC Input and Output Levels 3.3 V LVTTL / 3.3 V LVCMOS Drive Strength 4 mA 8 mA 12 mA 16 mA 24 mA 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 2 mA 4 mA 6 mA 8 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. VIL Min. V –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 Max. V 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 Min. V 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 VIH Max. V 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 VOL Max. V 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 VOH Min. V 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 IOL IOH mA mA 4 8 12 16 24 2 4 6 8 12 16 24 2 4 6 8 4 8 12 16 24 2 4 6 8 12 16 24 2 4 6 8 IOSL Max. mA3 27 54 109 127 181 27 27 54 54 109 127 181 27 27 54 54 IOSH Max. mA3 25 51 103 132 268 25 25 51 51 103 132 268 25 25 51 51 IIL1 IIH2 µA4 µA4 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Applicable to Pro I/O Banks Applicable to Advanced I/O Banks Applicable to Standard I/O Banks Test Point Data Path 35 pF R=1k Test Point Enable Path R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-117 • AC Loading Revision 2 2- 177 Device Architecture Table 2-103 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) 3.3 Measuring Point* (V) 1.4 VREF (typ.) (V) – CLOAD (pF) 35 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-104 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Pro I/Os Spee Drive d Strength Grade tDOUT 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 11.01 9.36 8.22 7.86 6.69 5.87 6.03 5.13 4.50 5.62 4.78 4.20 5.24 4.46 3.92 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 tPYS 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 11.21 9.54 8.37 8.01 6.81 5.98 6.14 5.22 4.58 5.72 4.87 4.27 5.34 4.54 3.99 tZH 9.05 7.70 6.76 6.44 5.48 4.81 5.02 4.27 3.75 4.72 4.02 3.53 4.69 3.99 3.50 tLZ 2.69 2.29 2.01 3.04 2.58 2.27 3.28 2.79 2.45 3.32 2.83 2.48 3.39 2.88 2.53 tHZ 2.44 2.08 1.82 3.06 2.61 2.29 3.47 2.95 2.59 3.58 3.04 2.67 3.96 3.37 2.96 tZLS 11.44 10.04 10.24 8.71 7.65 8.37 7.12 6.25 7.96 6.77 5.94 7.58 6.44 5.66 tZHS 9.60 8.43 8.68 7.38 6.48 7.26 6.17 5.42 6.96 5.92 5.20 6.93 5.89 5.17 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 13.45 11.29 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 17 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-105 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Pro I/Os Drive Speed Strength Grade tDOUT 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tEOU tDP 7.88 6.71 5.89 5.08 4.32 3.79 3.67 3.12 2.74 3.46 2.95 2.59 3.21 2.73 2.39 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 tPYS 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 1.57 1.33 1.17 T tZL 8.03 6.83 6.00 5.17 4.40 3.86 3.74 3.18 2.79 3.53 3.00 2.63 3.27 2.78 2.44 tZH 6.70 5.70 5.01 4.14 3.52 3.09 2.87 2.44 2.14 2.61 2.22 1.95 2.16 1.83 1.61 tLZ 2.69 2.29 2.01 3.05 2.59 2.28 3.28 2.79 2.45 3.33 2.83 2.49 3.39 2.88 2.53 tHZ 2.59 2.20 1.93 3.21 2.73 2.40 3.61 3.07 2.70 3.72 3.17 2.78 4.13 3.51 3.08 tZLS 10.26 8.73 7.67 7.41 6.30 5.53 5.97 5.08 4.46 5.76 4.90 4.30 5.50 4.68 4.11 tZHS 8.94 7.60 6.67 6.38 5.43 4.76 5.11 4.34 3.81 4.84 4.12 3.62 4.39 3.74 3.28 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 179 Device Architecture Table 2-106 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Advanced I/Os Drive Strength 4 mA Speed Grade Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 10.26 8.72 7.66 7.27 6.19 5.43 5.58 4.75 4.17 5.21 4.43 3.89 4.85 4.13 3.62 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 10.45 8.89 7.80 7.41 6.30 5.53 5.68 4.84 4.24 5.30 4.51 3.96 4.94 4.20 3.69 tZH 8.90 7.57 6.64 6.28 5.35 4.69 4.87 4.14 3.64 4.56 3.88 3.41 4.54 3.87 3.39 tLZ 2.64 2.25 1.98 2.98 2.54 2.23 3.21 2.73 2.39 3.26 2.77 2.43 3.32 2.82 2.48 tHZ 2.46 2.09 1.83 3.04 2.59 2.27 3.42 2.91 2.55 3.51 2.99 2.62 3.88 3.30 2.90 tZLS 12.68 10.79 9.47 9.65 8.20 7.20 7.92 6.74 5.91 7.54 6.41 5.63 7.18 6.10 5.36 tZHS 11.13 9.47 8.31 8.52 7.25 6.36 7.11 6.05 5.31 6.80 5.79 5.08 6.78 5.77 5.06 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 18 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-107 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Advanced I/Os Drive Strength 4 mA Speed Grade Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 7.66 6.51 5.72 4.91 4.17 3.66 3.53 3.00 2.64 3.33 2.83 2.49 3.08 2.62 2.30 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 1.20 1.02 0.90 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 7.80 6.63 5.82 5.00 4.25 3.73 3.60 3.06 2.69 3.39 2.89 2.53 3.13 2.66 2.34 tZH 6.59 5.60 4.92 4.07 3.46 3.04 2.82 2.40 2.11 2.56 2.18 1.91 2.12 1.80 1.58 tLZ 2.65 2.25 1.98 2.99 2.54 2.23 3.21 2.73 2.40 3.26 2.77 2.44 3.32 2.83 2.48 tHZ 2.61 2.22 1.95 3.20 2.73 2.39 3.58 3.05 2.68 3.68 3.13 2.75 4.06 3.45 3.03 tZLS 10.03 8.54 7.49 7.23 6.15 5.40 5.83 4.96 4.36 5.63 4.79 4.20 5.37 4.57 4.01 tZHS 8.82 7.51 6.59 6.31 5.36 4.71 5.06 4.30 3.78 4.80 4.08 3.58 4.35 3.70 3.25 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-108 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 6 mA Std. –1 –2 8 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 9.46 8.05 7.07 9.46 8.05 7.07 6.57 5.59 4.91 6.57 5.59 4.91 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.00 0.85 0.75 1.00 0.85 0.75 1.00 0.85 0.75 1.00 0.85 0.75 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 9.64 8.20 7.20 9.64 8.20 7.20 6.69 5.69 5.00 6.69 5.69 5.00 tZH 8.54 7.27 6.38 8.54 7.27 6.38 5.98 5.09 4.47 5.98 5.09 4.47 tLZ 2.07 1.76 1.55 2.07 1.76 1.55 2.40 2.04 1.79 2.40 2.04 1.79 tHZ 2.04 1.73 1.52 2.04 1.73 1.52 2.57 2.19 1.92 2.57 2.19 1.92 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 181 Device Architecture Table 2-109 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 2 4 mA Std. –1 –2 6 mA Std. –1 –2 8 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 7.07 6.01 5.28 7.07 6.01 5.28 4.41 3.75 3.29 4.41 3.75 3.29 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.00 0.85 0.75 1.00 0.85 0.75 1.00 0.85 0.75 1.00 0.85 0.75 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 7.20 6.12 5.37 7.20 6.12 5.37 4.49 3.82 3.36 4.49 3.82 3.36 tZH 6.23 5.30 4.65 6.23 5.30 4.65 3.75 3.19 2.80 3.75 3.19 2.80 tLZ 2.07 1.76 1.55 2.07 1.76 1.55 2.39 2.04 1.79 2.39 2.04 1.79 tHZ 2.15 1.83 1.60 2.15 1.83 1.60 2.69 2.29 2.01 2.69 2.29 2.01 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 18 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs 2.5 V LVCMOS Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 2.5 V applications. It uses a 5 V–tolerant input buffer and push-pull output buffer. Table 2-110 • Minimum and Maximum DC Input and Output Levels 2.5 V LVCMOS Drive Strength 4 mA 8 mA 12 mA 16 mA 24 mA 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 24 mA 2 mA 4 mA 6 mA 8 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. VIL Min. V –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 Max. V 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 Min. V 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 VIH Max. V 3.6 3.6 3.6 3.6 3.6 2.7 2.7 2.7 2.7 2.7 2.7 2.7 3.6 3.6 3.6 3.6 VOL Max. V 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 VOH Min. V 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 IOL IOH mA mA 4 8 12 16 24 2 4 6 8 12 16 24 2 4 6 8 4 8 12 16 24 2 4 6 8 12 16 24 2 4 6 8 IOSL Max. mA3 18 37 74 87 124 18 18 37 37 74 87 124 18 18 37 37 IOSH Max. mA3 16 32 65 83 169 16 16 32 32 65 83 169 16 16 32 32 IIL1 IIH2 µA4 µA4 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Applicable to Pro I/O Banks Applicable to Advanced I/O Banks Applicable to Standard I/O Banks Test Point Data Path 35 pF R=1k Test Point Enable Path R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-118 • AC Loading Table 2-111 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) 2.5 Measuring Point* (V) 1.2 VREF (typ.) (V) – CLOAD (pF) 35 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Revision 2 2- 183 Device Architecture Timing Characteristics Table 2-112 • 2.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Pro I/Os Drive Speed Strength Grade tDOUT 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 0.60 0.51 0.45 0.60 0.51 0.45 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 12.00 10.21 8.96 8.73 7.43 6.52 6.77 5.76 5.06 6.31 5.37 4.71 5.93 5.05 4.43 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 tPYS 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 10.40 9.13 8.89 7.57 6.64 6.90 5.87 5.15 6.42 5.46 4.80 6.04 5.14 4.51 tZH 9.88 8.67 8.01 6.82 5.98 6.11 5.20 4.56 5.73 4.87 4.28 5.70 4.85 4.26 tLZ 2.72 2.31 2.03 3.10 2.64 2.32 3.37 2.86 2.51 3.42 2.91 2.56 3.49 2.97 2.61 tHZ 2.20 1.87 1.64 2.93 2.49 2.19 3.39 2.89 2.53 3.52 3.00 2.63 4.00 3.40 2.99 tZLS tZHS Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 12.23 11.61 14.46 13.85 12.30 11.78 10.80 10.34 11.13 10.25 9.47 8.31 9.14 7.77 6.82 8.66 7.37 6.47 8.28 7.04 6.18 8.72 7.65 8.34 7.10 6.23 7.96 6.77 5.95 7.94 6.75 5.93 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 18 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-113 • 2.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Pro I/Os Drive Strength 4 mA Speed Grade tDOUT Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 0.60 0.51 0.45 0.60 0.51 0.45 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 8.82 7.50 6.58 5.27 4.48 3.94 3.74 3.18 2.80 3.53 3.00 2.63 3.26 2.77 2.44 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 1.51 1.29 1.13 tPYS tEOUT 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 1.66 1.41 1.24 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 8.13 6.92 6.07 5.27 4.48 3.93 3.81 3.24 2.85 3.59 3.06 2.68 3.32 2.83 2.48 tZH 8.82 7.50 6.58 5.27 4.48 3.94 3.49 2.97 2.61 3.12 2.65 2.33 2.48 2.11 1.85 tLZ 2.72 2.31 2.03 3.10 2.64 2.32 3.37 2.86 2.51 3.42 2.91 2.56 3.49 2.97 2.61 tHZ 2.29 1.95 1.71 3.03 2.58 2.26 3.49 2.97 2.61 3.62 3.08 2.71 4.11 3.49 3.07 tZLS 8.82 7.74 7.50 6.38 5.60 6.05 5.15 4.52 5.83 4.96 4.35 5.56 4.73 4.15 tZHS 9.40 8.25 7.51 6.38 5.61 5.73 4.87 4.28 5.35 4.55 4.00 4.72 4.01 3.52 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10.37 11.05 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 185 Device Architecture Table 2-114 • 2.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Advanced I/Os Drive Strength 4 mA Speed Grade Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 11.40 9.69 8.51 7.96 6.77 5.94 6.18 5.26 4.61 6.18 5.26 4.61 6.18 5.26 4.61 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 11.22 9.54 8.38 8.11 6.90 6.05 6.29 5.35 4.70 6.29 5.35 4.70 6.29 5.35 4.70 tZH 11.40 9.69 8.51 7.81 6.65 5.84 5.92 5.03 4.42 5.92 5.03 4.42 5.92 5.03 4.42 tLZ 2.68 2.28 2.00 3.05 2.59 2.28 3.30 2.81 2.47 3.30 2.81 2.47 3.30 2.81 2.47 tHZ 2.20 1.88 1.65 2.89 2.46 2.16 3.32 2.83 2.48 3.32 2.83 2.48 3.32 2.83 2.48 tZLS 13.45 11.44 10.05 10.34 8.80 7.72 8.53 7.26 6.37 8.53 7.26 6.37 8.53 7.26 6.37 tZHS 13.63 11.60 10.18 10.05 8.55 7.50 8.15 6.94 6.09 8.15 6.94 6.09 8.15 6.94 6.09 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 18 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-115 • 2.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Advanced I/Os Drive Strength 4 mA Speed Grade Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 24 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 8.66 7.37 6.47 5.17 4.39 3.86 3.56 3.03 2.66 3.35 2.85 2.50 3.56 3.03 2.66 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 7.83 6.66 5.85 5.04 4.28 3.76 3.63 3.08 2.71 3.41 2.90 2.55 3.63 3.08 2.71 tZH 8.66 7.37 6.47 5.17 4.39 3.86 3.43 2.92 2.56 3.06 2.60 2.29 3.43 2.92 2.56 tLZ 2.68 2.28 2.00 3.05 2.59 2.28 3.30 2.81 2.47 3.36 2.86 2.51 3.30 2.81 2.47 tHZ 2.30 1.96 1.72 3.00 2.55 2.24 3.44 2.92 2.57 3.55 3.02 2.65 3.44 2.92 2.57 tZLS 10.07 8.56 7.52 7.27 6.19 5.43 5.86 4.99 4.38 5.65 4.81 4.22 5.86 4.99 4.38 tZHS 10.90 9.27 8.14 7.40 6.30 5.53 5.67 4.82 4.23 5.30 4.51 3.96 5.67 4.82 4.23 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-116 • 2.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 6 mA Std. –1 –2 8 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 11.00 9.35 8.21 11.00 9.35 8.21 7.50 6.38 5.60 7.50 6.38 5.60 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.29 1.10 0.96 1.29 1.10 0.96 1.29 1.10 0.96 1.29 1.10 0.96 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 10.37 8.83 7.75 10.37 8.83 7.75 7.36 6.26 5.49 7.36 6.26 5.49 tZH 11.00 9.35 8.21 11.00 9.35 8.21 7.50 6.38 5.60 7.50 6.38 5.60 tLZ 2.03 1.73 1.52 2.03 1.73 1.52 2.39 2.03 1.78 2.39 2.03 1.78 tHZ 1.83 1.56 1.37 1.83 1.56 1.37 2.46 2.10 1.84 2.46 2.10 1.84 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 187 Device Architecture Table 2-117 • 2.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 6 mA Std. –1 –2 8 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 8.20 6.98 6.13 8.20 6.98 6.13 4.77 4.05 3.56 4.77 4.05 3.56 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.29 1.10 0.96 1.29 1.10 0.96 1.29 1.10 0.96 1.29 1.10 0.96 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 7.24 6.16 5.41 7.24 6.16 5.41 4.55 3.87 3.40 4.55 3.87 3.40 tZH 8.20 6.98 6.13 8.20 6.98 6.13 4.77 4.05 3.56 4.77 4.05 3.56 tLZ 2.03 1.73 1.52 2.03 1.73 1.52 2.38 2.03 1.78 2.38 2.03 1.78 tHZ 1.91 1.62 1.43 1.91 1.62 1.43 2.55 2.17 1.91 2.55 2.17 1.91 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 18 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs 1.8 V LVCMOS Low-Voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.8 V applications. It uses a 1.8 V input buffer and push-pull output buffer. Table 2-118 • Minimum and Maximum DC Input and Output Levels 1.8 V LVCMOS Drive Strength 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA 2 mA 4 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. VIL Min. V –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 Max. V Min. V VIH Max. V 3.6 3.6 3.6 3.6 3.6 3.6 1.9 1.9 1.9 1.9 1.9 1.9 3.6 3.6 VOL Max. V VOH Min. V IOL IOH mA mA 2 4 6 8 2 4 6 8 12 16 2 4 6 8 12 16 2 4 IOSL Max. mA3 11 22 44 51 74 74 11 22 44 51 74 74 11 22 IOSH Max. mA3 9 17 35 45 91 91 9 17 35 45 91 91 9 17 IIL1 IIH2 µA4 µA4 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Applicable to Pro I/O Banks 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.45 VCCI – 0.45 0.45 VCCI – 0.45 0.45 VCCI – 0.45 0.45 VCCI – 0.45 0.45 VCCI – 0.45 12 0.45 VCCI – 0.45 16 0.45 VCCI – 0.45 0.45 VCCI – 0.45 0.45 VCCI – 0.45 0.45 VCCI – 0.45 2 4 6 8 Applicable to Advanced I/O Banks 0.45 VCCI – 0.45 12 0.45 VCCI – 0.45 16 0.45 VCCI – 0.45 0.45 VCCI – 0.45 2 4 Applicable to Standard I/O Banks Test Point Data Path 35 pF R=1k Test Point Enable Path R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-119 • AC Loading Table 2-119 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input Low (V) 1.8 Measuring Point* (V) 0.9 VREF (typ.) (V) – CLOAD (pF) 35 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Revision 2 2- 189 Device Architecture Timing Characteristics Table 2-120 • 1.8 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Pro I/Os Drive Strength 2 mA Speed Grade tDOUT Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 15.84 13.47 11.83 11.39 9.69 8.51 8.97 7.63 6.70 8.35 7.10 6.24 7.94 6.75 5.93 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 tPYS 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL tZH tLZ 2.78 2.37 2.08 3.26 2.77 2.43 3.57 3.04 2.66 3.64 3.10 2.72 3.74 3.18 2.79 tHZ 1.58 1.35 1.18 2.77 2.36 2.07 3.36 2.86 2.51 3.52 3.00 2.63 4.11 3.49 3.07 tZLS tZHS Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 15.65 15.84 13.31 13.47 11.69 11.83 11.60 10.76 9.87 8.66 9.14 7.77 6.82 8.50 7.23 6.35 8.09 6.88 6.04 9.15 8.03 8.10 6.89 6.05 7.59 6.45 5.66 7.56 6.43 5.65 17.89 18.07 15.22 15.37 13.36 13.50 13.84 12.99 11.77 11.05 10.33 9.67 8.49 10.74 9.14 8.02 10.32 8.78 7.71 9.70 8.79 7.72 9.82 8.35 7.33 9.80 8.33 7.32 11.37 10.33 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 19 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-121 • 1.8 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Pro I/Os Drive Speed Strength Grade tDOUT 2 mA Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 12.10 10.30 9.04 7.05 6.00 5.27 4.52 3.85 3.38 4.12 3.51 3.08 3.80 3.23 2.83 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 1.45 1.23 1.08 tPYS 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 1.91 1.62 1.42 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 9.59 8.16 7.16 6.20 5.28 4.63 4.47 3.80 3.33 4.20 3.57 3.14 3.87 3.29 2.89 tZH 12.10 10.30 9.04 7.05 6.00 5.27 4.52 3.85 3.38 3.99 3.40 2.98 3.09 2.63 2.31 tLZ 2.78 2.37 2.08 3.25 2.76 2.43 3.57 3.04 2.66 3.63 3.09 2.71 3.73 3.18 2.79 tHZ 1.64 1.39 1.22 2.86 2.44 2.14 3.47 2.95 2.59 3.62 3.08 2.71 4.24 3.60 3.16 tZLS tZHS Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 11.83 14.34 10.06 12.20 8.83 8.44 7.18 6.30 6.70 5.70 5.00 6.43 5.47 4.81 6.10 5.19 4.56 10.71 9.29 7.90 6.94 6.76 5.75 5.05 6.23 5.30 4.65 5.32 4.53 3.98 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 191 Device Architecture Table 2-122 • 1.8 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Advanced I/Os Drive Strength 2 mA Speed Grade Std. –1 –22 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 15.53 13.21 11.60 10.48 8.91 7.82 8.05 6.85 6.01 7.50 6.38 5.60 7.29 6.20 5.45 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 14.11 12.01 10.54 10.41 8.86 7.77 8.20 6.97 6.12 7.64 6.50 5.71 7.23 6.15 5.40 tZH 15.53 13.21 11.60 10.48 8.91 7.82 7.84 6.67 5.86 7.30 6.21 5.45 7.29 6.20 5.45 tLZ 2.78 2.36 2.07 3.23 2.75 2.41 3.54 3.01 2.64 3.61 3.07 2.69 3.71 3.15 2.77 tHZ 1.60 1.36 1.19 2.73 2.33 2.04 3.27 2.78 2.44 3.41 2.90 2.55 3.95 3.36 2.95 tZLS 16.35 13.91 12.21 12.65 10.76 9.44 10.43 8.88 7.79 9.88 8.40 7.38 9.47 8.06 7.07 tZHS 17.77 15.11 13.27 12.71 10.81 9.49 10.08 8.57 7.53 9.53 8.11 7.12 9.53 8.11 7.12 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 19 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-123 • 1.8 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Advanced I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 16 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 11.86 10.09 8.86 6.91 5.88 5.16 4.45 3.78 3.32 3.92 3.34 2.93 3.53 3.01 2.64 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.22 1.04 0.91 1.22 1.04 0.91 1.22 1.04 0.91 1.22 1.04 0.91 1.22 1.04 0.91 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 9.14 7.77 6.82 5.86 4.99 4.38 4.18 3.56 3.12 3.93 3.34 2.93 3.60 3.06 2.69 tZH 11.86 10.09 8.86 6.91 5.88 5.16 4.45 3.78 3.32 3.92 3.34 2.93 3.04 2.59 2.27 tLZ 2.77 2.36 2.07 3.22 2.74 2.41 3.53 3.00 2.64 3.60 3.06 2.69 3.70 3.15 2.76 tHZ 1.66 1.41 1.24 2.84 2.41 2.12 3.38 2.88 2.53 3.52 3.00 2.63 4.08 3.47 3.05 tZLS 11.37 9.67 8.49 8.10 6.89 6.05 6.42 5.46 4.79 6.16 5.24 4.60 5.84 4.96 4.36 tZHS 14.10 11.99 10.53 9.15 7.78 6.83 6.68 5.69 4.99 6.16 5.24 4.60 5.28 4.49 3.94 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-124 • 1.8 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 tDP 15.01 12.77 11.21 10.10 8.59 7.54 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 tZL 13.15 11.19 9.82 9.55 8.13 7.13 tZH 15.01 12.77 11.21 10.10 8.59 7.54 tLZ 1.99 1.70 1.49 2.41 2.05 1.80 tHZ 1.99 1.70 1.49 2.37 2.02 1.77 Units ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 193 Device Architecture Table 2-125 • 1.8 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 tDP 11.21 9.54 8.37 6.34 5.40 4.74 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.20 1.02 0.90 1.20 1.02 0.90 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 tZL 8.53 7.26 6.37 5.38 4.58 4.02 tZH 11.21 9.54 8.37 6.34 5.40 4.74 tLZ 1.99 1.69 1.49 2.41 2.05 1.80 tHZ 1.21 1.03 0.90 2.48 2.11 1.85 Units ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 19 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs 1.5 V LVCMOS (JESD8-11) Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.5 V applications. It uses a 1.5 V input buffer and push-pull output buffer. Table 2-126 • Minimum and Maximum DC Input and Output Levels 1.5 V LVCMOS Drive Strength 2 mA 4 mA 6 mA 8 mA 12 mA 2 mA 4 mA 6 mA 8 mA 12 mA 2 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. VIL Min. V –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 –0.3 Max. V VIH Min. V Max. V 3.6 3.6 3.6 3.6 3.6 VOL Max. V VOH Min. V IOL IOH IOSL IOSH IIL1 IIH2 Max. Max. mA mA mA3 mA3 µA4 µA4 2 4 6 8 2 4 6 8 12 2 4 6 8 12 2 16 33 39 55 55 16 33 39 55 55 16 13 25 32 66 66 13 25 32 66 66 13 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Applicable to Pro I/O Banks 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.35 * VCCI 0.65 * VCCI 0.25 * VCCI 0.75 * VCCI 0.25 * VCCI 0.75 * VCCI 0.25 * VCCI 0.75 * VCCI 0.25 * VCCI 0.75 * VCCI 0.25 * VCCI 0.75 * VCCI 12 2 4 6 8 Applicable to Advanced I/O Banks 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 12 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 Applicable to Pro I/O Banks Test Point Data Path 35 pF R=1k Test Point Enable Path R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-120 • AC Loading Table 2-127 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) 1.5 Measuring Point* (V) 0.75 VREF (typ.) (V) – CLOAD (pF) 35 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Revision 2 2- 195 Device Architecture Timing Characteristics Table 2-128 • 1.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Pro I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 14.11 12.00 10.54 11.23 9.55 8.39 10.45 8.89 7.81 10.02 8.52 7.48 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.70 1.44 1.27 1.70 1.44 1.27 1.70 1.44 1.27 1.70 1.44 1.27 tPYS 2.14 1.82 1.60 2.14 1.82 1.60 2.14 1.82 1.60 2.14 1.82 1.60 tEOUT tZL tZH tLZ 3.40 2.90 2.54 3.77 3.21 2.81 3.84 3.27 2.87 3.97 3.38 2.97 tHZ 2.68 2.28 2.00 3.36 2.86 2.51 3.55 3.02 2.65 4.22 3.59 3.15 tZLS tZHS Units ns ns ns ns ns ns ns ns ns ns ns ns 0.43 14.37 13.14 0.36 12.22 11.17 0.32 10.73 0.43 11.44 0.36 0.32 9.73 8.54 9.81 9.87 8.39 7.37 9.24 7.86 6.90 9.23 7.85 6.89 16.61 15.37 14.13 13.08 12.40 11.48 13.68 12.10 11.63 10.29 10.21 9.04 0.43 10.65 0.36 0.32 9.06 7.95 12.88 11.48 10.96 9.62 9.76 8.57 0.43 10.20 0.36 0.32 8.68 7.62 12.44 11.47 10.58 9.29 9.75 8.56 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-129 • 1.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Pro I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 tEOU tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 8.53 7.26 6.37 5.41 4.60 4.04 4.80 4.09 3.59 4.42 3.76 3.30 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.70 1.44 1.27 1.70 1.44 1.27 1.70 1.44 1.27 1.70 1.44 1.27 tPYS 2.14 1.82 1.60 2.14 1.82 1.60 2.14 1.82 1.60 2.14 1.82 1.60 T tZL 7.26 6.18 5.42 5.22 4.44 3.89 4.89 4.16 3.65 4.50 3.83 3.36 tZH 8.53 7.26 6.37 5.41 4.60 4.04 4.75 4.04 3.54 3.62 3.08 2.70 tLZ 3.39 2.89 2.53 3.75 3.19 2.80 3.83 3.26 2.86 3.96 3.37 2.96 tHZ 2.79 2.37 2.08 3.48 2.96 2.60 3.67 3.12 2.74 4.37 3.72 3.27 tZLS 8.08 7.09 7.45 6.34 5.56 7.13 6.06 5.32 6.74 5.73 5.03 tZHS 9.16 8.04 7.65 6.50 5.71 6.98 5.94 5.21 5.86 4.98 4.37 Units ns ns ns ns ns ns ns ns ns ns ns ns 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 9.50 10.77 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 19 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 2-130 • 1.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Advanced I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 12.78 10.87 9.55 10.01 8.51 7.47 9.33 7.94 6.97 8.91 7.58 6.65 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 1.31 1.11 0.98 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 12.81 10.90 9.57 10.19 8.67 7.61 9.51 8.09 7.10 9.07 7.72 6.78 tZH 12.78 10.87 9.55 9.55 8.12 7.13 8.89 7.56 6.64 8.89 7.57 6.64 tLZ 3.40 2.89 2.54 3.75 3.19 2.80 3.83 3.26 2.86 3.95 3.36 2.95 tHZ 2.64 2.25 1.97 3.27 2.78 2.44 3.43 2.92 2.56 4.05 3.44 3.02 tZLS 15.05 12.80 11.24 12.43 10.57 9.28 11.74 9.99 8.77 11.31 9.62 8.45 tZHS 15.02 12.78 11.22 11.78 10.02 8.80 11.13 9.47 8.31 11.13 9.47 8.31 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-131 • 1.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Advanced I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 4 mA Std. –1 –2 8 mA Std. –1 –2 12 mA Std. –1 –2 tDOUT 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 0.66 0.56 0.49 tDP 8.36 7.11 6.24 5.31 4.52 3.97 4.67 3.97 3.49 4.08 3.47 3.05 tDIN 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 0.04 0.04 0.03 tPY 1.44 1.22 1.07 1.44 1.22 1.07 1.44 1.22 1.07 1.44 1.22 1.07 tEOUT 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 0.43 0.36 0.32 tZL 6.82 5.80 5.10 4.85 4.13 3.62 4.55 3.87 3.40 4.15 3.53 3.10 tZH 8.36 7.11 6.24 5.31 4.52 3.97 4.67 3.97 3.49 3.58 3.04 2.67 tLZ 3.39 2.88 2.53 3.74 3.18 2.79 3.82 3.25 2.85 3.94 3.36 2.95 tHZ 2.77 2.35 2.06 3.40 2.89 2.54 3.56 3.03 2.66 4.20 3.58 3.14 tZLS 9.06 7.71 6.76 7.09 6.03 5.29 6.78 5.77 5.07 6.39 5.44 4.77 tZHS 10.60 9.02 7.91 7.55 6.42 5.64 6.90 5.87 5.16 5.81 4.95 4.34 Units ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 197 Device Architecture Table 2-132 • 1.5 V LVCMOS Low Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 12.33 10.49 9.21 tDIN 0.04 0.04 0.03 tPY 1.42 1.21 1.06 tEOUT 0.43 0.36 0.32 tZL 11.79 10.03 8.81 tZH 12.33 10.49 9.21 tLZ 2.45 2.08 1.83 tHZ 2.32 1.98 1.73 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-133 • 1.5 V LVCMOS High Slew Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V Applicable to Standard I/Os Drive Strength 2 mA Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 7.65 6.50 5.71 tDIN 0.04 0.04 0.03 tPY 1.42 1.21 1.06 tEOUT 0.43 0.36 0.32 tZL 6.31 5.37 4.71 tZH 7.65 6.50 5.71 tLZ 2.45 2.08 1.83 tHZ 2.45 2.08 1.83 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 19 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs 3.3 V PCI, 3.3 V PCI-X The Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus applications. Table 2-134 • Minimum and Maximum DC Input and Output Levels 3.3 V PCI/PCI-X Drive Strength Per PCI specification Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V Max. V Min. V VIH Max. V VOL Max. V VOH Min. V IOL mA IOH mA IOSL Max. mA3 IOSH Max. mA3 IIL1 µA4 10 IIH2 µA4 10 Per PCI curves AC loadings are defined per the PCI/PCI-X specifications for the datapath; Microsemi loadings for enable path characterization are described in Figure 2-121. R = 25 Test Point Data Path R to VCCI for tDP (F) R to GND for tDP (R) R=1k Test Point Enable Path R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 10 pF for tZH / tZHS / tZL / tZLS 10 pF for tHZ / tLZ Figure 2-121 • AC Loading AC loadings are defined per PCI/PCI-X specifications for the data path; Microsemi loading for tristate is described in Table 2-135. Table 2-135 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) 3.3 Measuring Point* (V) 0.285 * VCCI for tDP(R) 0.615 * VCCI for tDP(F) VREF (typ.) (V) – CLOAD (pF) 10 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Revision 2 2- 199 Device Architecture Timing Characteristics Table 2-136 • 3.3 V PCI/PCI-X Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Pro I/Os Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.81 2.39 2.09 tDIN 0.04 0.04 0.03 tPY 1.05 0.89 0.78 tPYS 1.67 1.42 1.25 tEOUT 0.43 0.36 0.32 tZL 2.86 2.43 2.13 tZH 2.00 1.70 1.49 tLZ 3.28 2.79 2.45 tHZ 3.61 3.07 2.70 tZLS 5.09 4.33 3.80 tZHS 4.23 3.60 3.16 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Table 2-137 • 3.3 V PCI/PCI-X Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Advanced I/Os Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.68 2.28 2.00 tDIN 0.04 0.04 0.03 tPY 0.86 0.73 0.65 tPYS 0.43 0.36 0.32 tEOUT 2.73 2.32 2.04 tZL 1.95 1.66 1.46 tZH 3.21 2.73 2.40 tLZ 3.58 3.05 2.68 tHZ 4.97 4.22 3.71 tZLS 4.19 3.56 3.13 tZHS 0.66 0.56 0.49 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 20 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Voltage Referenced I/O Characteristics 3.3 V GTL Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V. Table 2-138 • Minimum and Maximum DC Input and Output Levels 3.3 V GTL Drive Strength 25 mA3 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.4 VOH Min. V – IOL IOH IOSL mA mA 25 25 Max. mA3 181 IOSH Max. mA3 268 IIL1 IIH2 µA4 µA4 10 10 VREF – 0.05 VREF + 0.05 VTT GTL Test Point 10 pF 25 Figure 2-122 • AC Loading Table 2-139 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.05 Input High (V) VREF + 0.05 Measuring Point* (V) 0.8 VREF (typ.) (V) 0.8 VTT (typ.) (V) 1.2 CLOAD (pF) 10 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-140 • 3.3 V GTL Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V, VREF = 0.8 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.08 1.77 1.55 tDIN 0.04 0.04 0.03 tPY 2.93 2.50 2.19 tEOUT 0.43 0.36 0.32 tZL 2.04 1.73 1.52 tZH 2.08 1.77 1.55 tLZ tHZ tZLS 4.27 3.63 3.19 tZHS 4.31 3.67 3.22 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 201 Device Architecture 2.5 V GTL Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V. Table 2-141 • Minimum and Maximum DC Input and Output Levels 2.5 GTL Drive Strength 25 mA3 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.4 VOH Min. V – IOL IOH mA 25 mA 25 IOSL Max. mA3 124 IOSH Max. mA3 169 IIL1 µA4 10 IIH2 µA4 10 VREF – 0.05 VREF + 0.05 VTT GTL Test Point 10 pF 25 Figure 2-123 • AC Loading Table 2-142 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.05 Input High (V) VREF + 0.05 Measuring Point* (V) 0.8 VREF (typ.) (V) 0.8 VTT (typ.) (V) 1.2 CLOAD (pF) 10 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-143 • 2.5 V GTL Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V, VREF = 0.8 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.13 1.81 1.59 tDIN 0.04 0.04 0.03 tPY 2.46 2.09 1.83 tEOUT 0.43 0.36 0.32 tZL 2.16 1.84 1.61 tZH 2.13 1.81 1.59 tLZ tHZ tZLS 4.40 3.74 3.28 tZHS 4.36 3.71 3.26 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 20 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs 3.3 V GTL+ Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V. Table 2-144 • Minimum and Maximum DC Input and Output Levels 3.3 V GTL+ Drive Strength 35 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.6 VOH Min. V – IOL IOH mA mA 35 35 IOSL Max. mA3 181 IOSH IIL1 IIH2 Max. mA3 268 µA4 µA4 10 10 VREF – 0.1 VREF + 0.1 VTT GTL+ Test Point 10 pF 25 Figure 2-124 • AC Loading Table 2-145 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.1 Input High (V) VREF + 0.1 Measuring Point* (V) 1.0 VREF (typ.) (V) 1.0 VTT (typ.) (V) 1.5 CLOAD (pF) 10 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-146 • 3.3 V GTL+ Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V, VREF = 1.0 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.06 1.75 1.53 tDIN 0.04 0.04 0.03 tPY 1.59 1.35 1.19 tEOUT 0.43 0.36 0.32 tZL 2.09 1.78 1.56 tZH 2.06 1.75 1.53 tLZ tHZ tZLS 4.33 3.68 3.23 tZHS 4.29 3.65 3.20 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 203 Device Architecture 2.5 V GTL+ Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V. Table 2-147 • Minimum and Maximum DC Input and Output Levels 2.5 V GTL+ Drive Strength 33 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V VIH Min. V Max. V 3.6 VOL Max. V 0.6 VOH Min. V – IOL mA 33 IOH mA 33 IOSL Max. mA3 124 IOSH Max. mA3 169 IIL1 IIH2 µA4 µA4 10 10 VREF – 0.1 VREF + 0.1 VTT GTL+ Test Point 10 pF 25 Figure 2-125 • AC Loading Table 2-148 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.1 Input High (V) VREF + 0.1 Measuring Point* (V) 1.0 VREF (typ.) (V) 1.0 VTT (typ.) (V) 1.5 CLOAD (pF) 10 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-149 • 2.5 V GTL+ Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V, VREF = 1.0 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.21 1.88 1.65 tDIN 0.04 0.04 0.03 tPY 1.51 1.29 1.13 tEOUT 0.43 0.36 0.32 tZL 2.25 1.91 1.68 tZH 2.10 1.79 1.57 tLZ tHZ tZLS 4.48 3.81 3.35 tZHS 4.34 3.69 4.34 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 20 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs HSTL Class I High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6). Fusion devices support Class I. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-150 • Minimum and Maximum DC Input and Output Levels HSTL Class I Drive Strength 8 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.4 VOH Min. V VCCI – 0.4 IOL IOH IOSL IOSH IIL1 IIH2 mA mA 8 8 Max. mA3 39 Max. mA3 µA4 µA4 32 10 10 VREF – 0.1 VREF + 0.1 HSTL Class I Test Point VTT 50 20 pF Figure 2-126 • AC Loading Table 2-151 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.1 Input High (V) VREF + 0.1 Measuring Point* (V) 0.75 VREF (typ.) (V) 0.75 VTT (typ.) (V) 0.75 CLOAD (pF) 20 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-152 • HSTL Class I Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V, VREF = 0.75 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 3.18 2.70 2.37 tDIN 0.04 0.04 0.03 tPY 2.12 1.81 1.59 tEOUT 0.43 0.36 0.32 tZL 3.24 2.75 2.42 tZH 3.14 2.67 2.35 tLZ tHZ tZLS 5.47 4.66 4.09 tZHS 5.38 4.58 4.02 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 205 Device Architecture HSTL Class II High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6). Fusion devices support Class II. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-153 • Minimum and Maximum DC Input and Output Levels HSTL Class II Drive Strength 15 mA3 Note: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Output drive strength is below JEDEC specification. VIL Min. V –0.3 Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.4 VOH Min. V IOL IOH mA mA 15 IOSL Max. mA3 55 IOSH IIL1 IIH2 Max. mA3 µA4 µA4 66 10 10 VREF – 0.1 VREF + 0.1 VCCI – 0.4 15 HSTL Class II Test Point VTT 25 20 pF Figure 2-127 • AC Loading Table 2-154 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.1 Input High (V) VREF + 0.1 Measuring Point* (V) 0.75 VREF (typ.) (V) 0.75 VTT (typ.) (V) 0.75 CLOAD (pF) 20 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-155 • HSTL Class II Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V, VREF = 0.75 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 3.02 2.57 2.26 tDIN 0.04 0.04 0.03 tPY 2.12 1.81 1.59 tEOUT 0.43 0.36 0.32 tZL 3.08 2.62 2.30 tZH 2.71 2.31 2.03 tLZ tHZ tZLS 5.32 4.52 3.97 tZHS 4.95 4.21 3.70 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 20 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs SSTL2 Class I Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). Fusion devices support Class I. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-156 • Minimum and Maximum DC Input and Output Levels SSTL2 Class I Drive Strength 15 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V Max. V Min. V VIH Max. V 3.6 VOL Max. V 0.54 VOH Min. V IOL IOH IOSL IOSH IIL1 Max. mA mA mA3 15 87 IIH2 Max. mA3 µA4 µA4 83 10 10 –0.3 VREF – 0.2 VREF + 0.2 VCCI – 0.62 15 SSTL2 Class I Test Point 25 VTT 50 30 pF Figure 2-128 • AC Loading Table 2-157 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.2 Input High (V) VREF + 0.2 Measuring Point* (V) 1.25 VREF (typ.) (V) 1.25 VTT (typ.) (V) 1.25 CLOAD (pF) 30 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-158 • SSTL 2 Class I Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V, VREF = 1.25 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.13 1.81 1.59 tDIN 0.04 0.04 0.03 tPY 1.33 1.14 1.00 tEOUT 0.43 0.36 0.32 tZL 2.17 1.84 1.62 tZH 1.85 1.57 1.38 tLZ tHZ tZLS 4.40 3.74 3.29 tZHS 4.08 3.47 3.05 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 207 Device Architecture SSTL2 Class II Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). Fusion devices support Class II. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-159 • Minimum and Maximum DC Input and Output Levels SSTL2 Class II Drive Strength 18 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V VIH Min. V Max. V 3.6 VOL Max. V 0.35 VOH Min. V IOL IOH IOSL IOSH IIL1 IIH2 mA mA 18 Max. mA3 124 Max. mA3 169 µA4 µA4 10 10 VREF – 0.2 VREF + 0.2 VCCI – 0.43 18 SSTL2 Class II Test Point 25 VTT 25 30 pF Figure 2-129 • AC Loading Table 2-160 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.2 Input High (V) VREF + 0.2 Measuring Point* (V) 1.25 VREF (typ.) (V) 1.25 VTT (typ.) (V) 1.25 CLOAD (pF) 30 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-161 • SSTL 2 Class II Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V, VREF = 1.25 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.17 1.84 1.62 tDIN 0.04 0.04 0.03 tPY 1.33 1.14 1.00 tEOUT 0.43 0.36 0.32 tZL 2.21 1.88 1.65 tZH 1.77 1.51 1.32 tLZ tHZ tZLS 4.44 3.78 3.32 tZHS 4.01 3.41 2.99 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 20 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs SSTL3 Class I Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). Fusion devices support Class I. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-162 • Minimum and Maximum DC Input and Output Levels SSTL3 Class I Drive Strength 14 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V Max. V VIH Min. V Max. V 3.6 VOL Max. V 0.7 VOH Min. V VCCI – 1.1 IOL mA 14 IOH IOSL mA 14 Max. mA3 54 IOSH Max. mA3 51 IIL1 IIH2 µA4 µA4 10 10 –0.3 VREF – 0.2 VREF + 0.2 SSTL3 Class I Test Point 25 VTT 50 30 pF Figure 2-130 • AC Loading Table 2-163 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.2 Input High (V) VREF + 0.2 Measuring Point* (V) 1.5 VREF (typ.) (V) 1.5 VTT (typ.) (V) 1.485 CLOAD (pF) 30 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-164 • SSTL3 Class I Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V, VREF = 1.5 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.31 1.96 1.72 tDIN 0.04 0.04 0.03 tPY 1.25 1.06 0.93 tEOUT 0.43 0.36 0.32 tZL 2.35 2.00 1.75 tZH 1.84 1.56 1.37 tLZ tHZ tZLS 4.59 3.90 3.42 tZHS 4.07 3.46 3.04 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 209 Device Architecture SSTL3 Class II Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). Fusion devices support Class II. This provides a differential amplifier input buffer and a push-pull output buffer. Table 2-165 • Minimum and Maximum DC Input and Output Levels SSTL3 Class II Drive Strength 21 mA Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. VIL Min. V –0.3 Max. V VIH Min. V Max. V 3.6 VOL Max. V 0.5 VOH Min. V VCCI – 0.9 IOL IOH mA mA 21 21 IOSL Max. mA3 109 IOSH Max. mA3 103 IIL1 IIH2 µA4 µA4 10 10 VREF – 0.2 VREF + 0.2 SSTL3 Class II Test Point 25 VTT 25 30 pF Figure 2-131 • AC Loading Table 2-166 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) VREF – 0.2 Input High (V) VREF + 0.2 Measuring Point* (V) 1.5 VREF (typ.) (V) 1.5 VTT (typ.) (V) 1.485 CLOAD (pF) 30 Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-167 • SSTL3- Class II Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V, VREF = 1.5 V Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.07 1.76 1.54 tDIN 0.04 0.04 0.03 tPY 1.25 1.06 0.93 tEOUT 0.43 0.36 0.32 tZL 2.10 1.79 1.57 tZH 1.67 1.42 1.25 tLZ tHZ tZLS 4.34 3.69 3.24 tZHS 3.91 3.32 2.92 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 21 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Differential I/O Characteristics Configuration of the I/O modules as a differential pair is handled by the Microsemi Designer software when the user instantiates a differential I/O macro in the design. Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output Register (OutReg), Enable Register (EnReg), and Double Data Rate (DDR). However, there is no support for bidirectional I/Os or tristates with these standards. LVDS Low-Voltage Differential Signal (ANSI/TIA/EIA-644) is a high-speed differential I/O standard. It requires that one data bit be carried through two signal lines, so two pins are needed. It also requires external resistor termination. The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-132. The building blocks of the LVDS transmitter–receiver are one transmitter macro, one receiver macro, three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver resistors are different from those used in the LVPECL implementation because the output standard specifications are different. Bourns Part Number: CAT16-LV4F12 OUTBUF_LVDS FPGA P 165 Ω ZO = 50 Ω 140 Ω N 165 Ω ZO = 50 Ω 100 Ω N P FPGA + – INBUF_LVDS Figure 2-132 • LVDS Circuit Diagram and Board-Level Implementation Table 2-168 • Minimum and Maximum DC Input and Output Levels DC Parameter VCCI VOL VOH IOL IOH VI IIL IIH 2,3 2,4 1 1 Description Supply Voltage Output Low Voltage Input High Voltage Output Low Voltage Output High Voltage Input Voltage Input Low Voltage Input High Voltage Differential Output Voltage Output Common Mode Voltage Input Common Mode Voltage Input Differential Voltage Min. 2.375 0.9 1.25 0.65 0.65 0 Typ. 2.5 1.075 1.425 0.91 0.91 Max. 2.625 1.25 1.6 1.16 1.16 2.925 10 10 Units V V V mA mA V μA μA mV V V mV VODIFF VOCM VICM VIDIFF Notes: 1. 2. 3. 4. 250 1.125 0.05 100 350 1.25 1.25 350 450 1.375 2.35 IOL/IOH defined by VODIFF/(Resistor Network) Currents are measured at 85°C junction temperature. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. Revision 2 2- 211 Device Architecture Table 2-169 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 1.075 Input High (V) 1.325 Measuring Point* (V) Cross point VREF (typ.) (V) – Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-170 • LVDS Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V Applicable to Pro I/Os Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.10 1.79 1.57 tDIN 0.04 0.04 0.03 tPY 1.82 1.55 1.36 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. BLVDS/M-LVDS Bus LVDS (BLVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to high-performance multipoint bus applications. Multidrop and multipoint bus configurations can contain any combination of drivers, receivers, and transceivers. Microsemi LVDS drivers provide the higher drive current required by BLVDS and M-LVDS to accommodate the loading. The driver requires series terminations for better signal quality and to control voltage swing. Termination is also required at both ends of the bus, since the driver can be located anywhere on the bus. These configurations can be implemented using TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations. Multipoint designs using Microsemi LVDS macros can achieve up to 200 MHz with a maximum of 20 loads. A sample application is given in Figure 2-133. The input and output buffer delays are available in the LVDS section in Table 2-171. Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required differential voltage, in worst-case industrial operating conditions at the farthest receiver: RS = 60 Ω and RT = 70 Ω, given Z0 = 50 Ω (2") and Zstub = 50 Ω (~1.5"). Receiver EN Transceiver EN Driver Receiver EN EN Transceiver EN R + - T + D + - - R + - T + BIBUF_LVDS - RS Zstub Z0 RT Z 0 RS Zstub Zstub Z0 Z0 RS RS Zstub Zstub Z0 Z0 RS RS Zstub Zstub Z0 Z0 RS RS Zstub ... Z0 Z0 RS RS Z0 Z0 R T Figure 2-133 • BLVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers 2- 21 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs LVPECL Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires external resistor termination. The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-134. The building blocks of the LVPECL transmitter–receiver are one transmitter macro, one receiver macro, three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver resistors are different from those used in the LVDS implementation because the output standard specifications are different. Bourns Part Number: CAT16-PC4F12 OUTBUF_LVPECL FPGA P 100 Ω ZO = 50 Ω 187 W 100 Ω P FPGA + – N INBUF_LVPECL N 100 Ω ZO = 50 Ω Figure 2-134 • LVPECL Circuit Diagram and Board-Level Implementation Table 2-171 • Minimum and Maximum DC Input and Output Levels DC Parameter VCCI VOL VOH VIL, VIH VODIFF VOCM VICM VIDIFF Description Supply Voltage Output Low Voltage Output High Voltage Input Low, Input High Voltages Differential Output Voltage Output Common Mode Voltage Input Common Mode Voltage Input Differential Voltage 0.96 1.8 0 0.625 1.762 1.01 300 Min. 3.0 1.27 2.11 3.3 0.97 1.98 2.57 1.06 1.92 0 0.625 1.762 1.01 300 Max. Min. 3.3 1.43 2.28 3.6 0.97 1.98 2.57 1.30 2.13 0 0.625 1.762 1.01 300 Max. Min. 3.6 1.57 2.41 3.9 0.97 1.98 2.57 Max. Units V V V V V V V mV Table 2-172 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 1.64 Input High (V) 1.94 Measuring Point* (V) Cross point VREF (typ.) (V) – Note: *Measuring point = Vtrip. See Table 2-90 on page 2-168 for a complete table of trip points. Timing Characteristics Table 2-173 • LVPECL Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V Applicable to Pro I/Os Speed Grade Std. –1 –2 tDOUT 0.66 0.56 0.49 tDP 2.14 1.82 1.60 tDIN 0.04 0.04 0.03 tPY 1.63 1.39 1.22 Units ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 213 Device Architecture I/O Register Specifications Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Preset INBUF Preset X D Data_out Y F X G X X L Pad Out DOUT PRE XD Q C DFN1E1P1 E E X Core Array PRE D Q DFN1E1P1 E EOUT H X A X X X Data Input I/O Register with: Active High Enable Active High Preset Positive Edge Triggered X K I J PRE D Q DFN1E1P1 E TRIBUF INBUF Data X Enable X B X INBUF CLKBUF CLK CLKBUF INBUF INBUF Data Output Register and Enable Output Register with: Active High Enable Active High Preset Postive Edge Triggered CLK Figure 2-135 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset 2- 21 4 R e visio n 2 D_Enable Enable Fusion Family of Mixed Signal FPGAs Table 2-174 • Parameter Definitions and Measuring Nodes Parameter Name tOCLKQ tOSUD tOHD tOSUE tOHE tOPRE2Q tOREMPRE tORECPRE tOECLKQ tOESUD tOEHD tOESUE tOEHE tOEPRE2Q tOEREMPRE tOERECPRE tICLKQ tISUD tIHD tISUE tIHE tIPRE2Q tIREMPRE tIRECPRE Parameter Definition Clock-to-Q of the Output Data Register Data Setup Time for the Output Data Register Data Hold Time for the Output Data Register Enable Setup Time for the Output Data Register Enable Hold Time for the Output Data Register Asynchronous Preset-to-Q of the Output Data Register Asynchronous Preset Removal Time for the Output Data Register Asynchronous Preset Recovery Time for the Output Data Register Clock-to-Q of the Output Enable Register Data Setup Time for the Output Enable Register Data Hold Time for the Output Enable Register Enable Setup Time for the Output Enable Register Enable Hold Time for the Output Enable Register Asynchronous Preset-to-Q of the Output Enable Register Asynchronous Preset Removal Time for the Output Enable Register Asynchronous Preset Recovery Time for the Output Enable Register Clock-to-Q of the Input Data Register Data Setup Time for the Input Data Register Data Hold Time for the Input Data Register Enable Setup Time for the Input Data Register Enable Hold Time for the Input Data Register Asynchronous Preset-to-Q of the Input Data Register Asynchronous Preset Removal Time for the Input Data Register Asynchronous Preset Recovery Time for the Input Data Register Measuring Nodes (from, to)* H, DOUT F, H F, H G, H G, H L,DOUT L, H L, H H, EOUT J, H J, H K, H K, H I, EOUT I, H I, H A, E C, A C, A B, A B, A D, E D, A D, A Note: *See Figure 2-135 on page 2-214 for more information. Revision 2 2- 215 Device Architecture Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Clear Pad Out DOUT Data D CC Q EE Y Core Array Data_out FF TRIBUF INBUF INBUF D Q DFN1E1C1 E DFN1E1C1 GG E EOUT CLR Enable BB CLR LL HH CLKBUF CLK AA JJ DD KK Data Input I/O Register with Active High Enable Active High Clear Positive Edge Triggered INBUF CLR D Q DFN1E1C1 E CLR Data Output Register and Enable Output Register with Active High Enable Active High Clear Positive Edge Triggered INBUF INBUF CLKBUF Figure 2-136 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear 2- 21 6 R e visio n 2 D_Enable Enable CLK Fusion Family of Mixed Signal FPGAs Table 2-175 • Parameter Definitions and Measuring Nodes Parameter Name tO CL KQ tOSUD tOHD tOSUE tOHE tOCLR2Q tOREMCLR tORECCLR tOECLKQ tOESUD tOEHD tOESUE tOEHE tOECLR2Q tOEREMCLR tOERECCLR tICLKQ tISUD tIHD tISUE tIHE tICLR2Q tIREMCLR tIRECCLR Parameter Definition Clock-to-Q of the Output Data Register Data Setup Time for the Output Data Register Data Hold Time for the Output Data Register Enable Setup Time for the Output Data Register Enable Hold Time for the Output Data Register Asynchronous Clear-to-Q of the Output Data Register Asynchronous Clear Removal Time for the Output Data Register Asynchronous Clear Recovery Time for the Output Data Register Clock-to-Q of the Output Enable Register Data Setup Time for the Output Enable Register Data Hold Time for the Output Enable Register Enable Setup Time for the Output Enable Register Enable Hold Time for the Output Enable Register Asynchronous Clear-to-Q of the Output Enable Register Asynchronous Clear Removal Time for the Output Enable Register Asynchronous Clear Recovery Time for the Output Enable Register Clock-to-Q of the Input Data Register Data Setup Time for the Input Data Register Data Hold Time for the Input Data Register Enable Setup Time for the Input Data Register Enable Hold Time for the Input Data Register Asynchronous Clear-to-Q of the Input Data Register Asynchronous Clear Removal Time for the Input Data Register Asynchronous Clear Recovery Time for the Input Data Register Measuring Nodes (from, to)* HH, DOUT FF, HH FF, HH GG, HH GG, HH LL, DOUT LL, HH LL, HH HH, EOUT JJ, HH JJ, HH KK, HH KK, HH II, EOUT II, HH II, HH AA, EE CC, AA CC, AA BB, AA BB, AA DD, EE DD, AA DD, AA Note: *See Figure 2-136 on page 2-216 for more information. Revision 2 2- 217 Device Architecture Input Register tICKMPWH tICKMPWL CLK 50% 50% tIHD 0 50% 50% 50% 50% 50% 50% tISUD Data 1 50% Enable 50% tIHE 50% tIWPRE tISUE tIRECPRE 50% tIWCLR 50% tIRECCLR 50% tIREMPRE 50% tIREMCLR 50% Preset Clear tIPRE2Q Out_1 50% tICLKQ 50% tICLR2Q 50% Figure 2-137 • Input Register Timing Diagram Timing Characteristics Table 2-176 • Input Data Register Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tICLKQ tISUD tIHD tISUE tIHE tICLR2Q tIPRE2Q tIREMCLR tIRECCLR tIREMPRE tIRECPRE tIWCLR tIWPRE tICKMPWH tICKMPWL Description Clock-to-Q of the Input Data Register Data Setup Time for the Input Data Register Data Hold Time for the Input Data Register Enable Setup Time for the Input Data Register Enable Hold Time for the Input Data Register Asynchronous Clear-to-Q of the Input Data Register Asynchronous Preset-to-Q of the Input Data Register Asynchronous Clear Removal Time for the Input Data Register Asynchronous Clear Recovery Time for the Input Data Register Asynchronous Preset Removal Time for the Input Data Register Asynchronous Preset Recovery Time for the Input Data Register Asynchronous Clear Minimum Pulse Width for the Input Data Register Asynchronous Preset Minimum Pulse Width for the Input Data Register Clock Minimum Pulse Width High for the Input Data Register Clock Minimum Pulse Width Low for the Input Data Register –2 0.24 0.26 0.00 0.37 0.00 0.45 0.45 0.00 0.22 0.00 0.22 0.22 0.22 0.36 0.32 –1 0.27 0.30 0.00 0.42 0.00 0.52 0.52 0.00 0.25 0.00 0.25 0.25 0.25 0.41 0.37 Std. 0.32 0.35 0.00 0.50 0.00 0.61 0.61 0.00 0.30 0.00 0.30 0.30 0.30 0.48 0.43 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 21 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Output Register tOCKMPWH tOCKMPWL 50% 50% tOSUD tOHD Data_out 1 50% 0 50% 50% 50% 50% 50% 50% CLK Enable 50% tOHE 50% tOWPRE tORECPRE 50% tOREMPRE 50% tOREMCLR 50% Preset tOSUE tOWCLR Clear tOPRE2Q DOUT 50% tOCLKQ 50% tOCLR2Q 50% 50% tORECCLR 50% Figure 2-138 • Output Register Timing Diagram Timing Characteristics Table 2-177 • Output Data Register Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tOCLKQ tOSUD tOHD tOSUE tOHE tOCLR2Q tOPRE2Q tOREMCLR tORECCLR tOREMPRE tORECPRE tOWCLR tOWPRE tOCKMPWH tOCKMPWL Description Clock-to-Q of the Output Data Register Data Setup Time for the Output Data Register Data Hold Time for the Output Data Register Enable Setup Time for the Output Data Register Enable Hold Time for the Output Data Register Asynchronous Clear-to-Q of the Output Data Register Asynchronous Preset-to-Q of the Output Data Register Asynchronous Clear Removal Time for the Output Data Register Asynchronous Clear Recovery Time for the Output Data Register Asynchronous Preset Removal Time for the Output Data Register Asynchronous Preset Recovery Time for the Output Data Register Asynchronous Clear Minimum Pulse Width for the Output Data Register Asynchronous Preset Minimum Pulse Width for the Output Data Register Clock Minimum Pulse Width High for the Output Data Register Clock Minimum Pulse Width Low for the Output Data Register –2 0.59 0.31 0.00 0.44 0.00 0.80 0.80 0.00 0.22 0.00 0.22 0.22 0.22 0.36 0.32 –1 0.67 0.36 0.00 0.50 0.00 0.91 0.91 0.00 0.25 0.00 0.25 0.25 0.25 0.41 0.37 Std. 0.79 0.42 0.00 0.59 0.00 1.07 1.07 0.00 0.30 0.00 0.30 0.30 0.30 0.48 0.43 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 219 Device Architecture Output Enable Register tOECKMPWH tOECKMPWL CLK 50% 50% tOESUD tOEHD 50% 50% 50% 50% 50% D_Enable 1 50% 0 50% Enable 50% tOEWPRE tOEHE tOESUE 50% tOERECPRE 50% tOEREMPRE 50% tOEREMCLR 50% Preset tOEWCLR Clear tOEPRE2Q EOUT 50% tOECLKQ 50% 50% tOERECCLR 50% tOECLR2Q 50% Figure 2-139 • Output Enable Register Timing Diagram Timing Characteristics Table 2-178 • Output Enable Register Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tOECLKQ tOESUD tOEHD tOESUE tOEHE tOECLR2Q tOEPRE2Q tOEREMCLR tOERECCLR tOEREMPRE tOERECPRE tOEWCLR tOEWPRE tOECKMPWH tOECKMPWL Description Clock-to-Q of the Output Enable Register Data Setup Time for the Output Enable Register Data Hold Time for the Output Enable Register Enable Setup Time for the Output Enable Register Enable Hold Time for the Output Enable Register Asynchronous Clear-to-Q of the Output Enable Register Asynchronous Preset-to-Q of the Output Enable Register Asynchronous Clear Removal Time for the Output Enable Register Asynchronous Clear Recovery Time for the Output Enable Register Asynchronous Preset Removal Time for the Output Enable Register Asynchronous Preset Recovery Time for the Output Enable Register –2 –1 Std. 0.59 0.42 0.00 0.58 0.00 0.89 0.89 0.00 0.30 0.00 0.30 0.30 0.30 0.48 0.43 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 0.44 0.51 0.31 0.36 0.00 0.00 0.44 0.50 0.00 0.00 0.67 0.76 0.67 0.76 0.00 0.00 0.22 0.25 0.00 0.00 0.22 0.25 Asynchronous Clear Minimum Pulse Width for the Output Enable 0.22 0.25 Register Asynchronous Preset Minimum Pulse Width for the Output Enable 0.22 0.25 Register Clock Minimum Pulse Width High for the Output Enable Register Clock Minimum Pulse Width Low for the Output Enable Register 0.36 0.41 0.32 0.37 Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 22 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs DDR Module Specifications Input DDR Module Input DDR A Data INBUF FF1 D Out_QF (to core) CLK CLKBUF B FF2 E Out_QR (to core) CLR INBUF C DDR_IN Figure 2-140 • Input DDR Timing Model Table 2-179 • Parameter Definitions Parameter Name tDDRICLKQ1 tDDRICLKQ2 tDDRISUD tDDRIHD tDDRICLR2Q1 tDDRICLR2Q2 tDDRIREMCLR tDDRIRECCLR Parameter Definition Clock-to-Out Out_QR Clock-to-Out Out_QF Data Setup Time of DDR Input Data Hold Time of DDR Input Clear-to-Out Out_QR Clear-to-Out Out_QF Clear Removal Clear Recovery Measuring Nodes (from, to) B, D B, E A, B A, B C, D C, E C, B C, B Revision 2 2- 221 Device Architecture CLK tDDRISUD Data 1 2 3 4 5 6 7 tDDRIHD 8 tDDRIRECCLR CLR tDDRIREMCLR tDDRICLKQ1 tDDRICLR2Q1 Out_QF tDDRICLR2Q2 Out_QR 3 2 4 tDDRICLKQ2 5 7 6 9 Figure 2-141 • Input DDR Timing Diagram Timing Characteristics Table 2-180 • Input DDR Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tDDRICLKQ1 tDDRICLKQ2 tDDRISUD tDDRIHD tDDRICLR2Q1 tDDRICLR2Q2 tDDRIREMCLR tDDRIRECCLR tDDRIWCLR tDDRICKMPWH tDDRICKMPWL FDDRIMAX Description Clock-to-Out Out_QR for Input DDR Clock-to-Out Out_QF for Input DDR Data Setup for Input DDR Data Hold for Input DDR Asynchronous Clear-to-Out Out_QR for Input DDR Asynchronous Clear-to-Out Out_QF for Input DDR Asynchronous Clear Removal Time for Input DDR Asynchronous Clear Recovery Time for Input DDR Asynchronous Clear Minimum Pulse Width for Input DDR Clock Minimum Pulse Width High for Input DDR Clock Minimum Pulse Width Low for Input DDR Maximum Frequency for Input DDR –2 0.39 0.27 0.28 0.00 0.57 0.46 0.00 0.22 0.22 0.36 0.32 1,404 –1 0.44 0.31 0.32 0.00 0.65 0.53 0.00 0.25 0.25 0.41 0.37 1,048 Std. 0.52 0.37 0.38 0.00 0.76 0.62 0.00 0.30 0.30 0.48 0.43 1,232 Units ns ns ns ns ns ns ns ns ns ns ns MHz Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 22 2 R e visio n 2 Fusion Family of Mixed Signal FPGAs Output DDR Data_F (from core) CLK CLKBUF Data_R (from core) CLR INBUF A FF1 B C D FF2 B C 1 0 E OUTBUF Out DDR_OUT Figure 2-142 • Output DDR Timing Model Table 2-181 • Parameter Definitions Parameter Name tDDROCLKQ tDDROCLR2Q tDDROREMCLR tDDRORECCLR tDDROSUD1 tDDROSUD2 tDDROHD1 tDDROHD2 Parameter Definition Clock-to-Out Asynchronous Clear-to-Out Clear Removal Clear Recovery Data Setup Data_F Data Setup Data_R Data Hold Data_F Data Hold Data_R Measuring Nodes (From, To) B, E C, E C, B C, B A, B D, B A, B D, B Revision 2 2- 223 Device Architecture CLK tDDROSUD2 tDDROHD2 Data_F 1 2 tDDROSUD1 Data_R 6 7 tDDROHD1 8 9 10 tDDRORECCLR CLR tDDROREMCLR tDDROCLR2Q Out tDDROCLKQ 7 2 8 3 9 4 10 11 3 4 5 Figure 2-143 • Output DDR Timing Diagram Timing Characteristics Table 2-182 • Output DDR Propagation Delays Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tDDROCLKQ tDDROSUD1 tDDROSUD2 tDDROHD1 tDDROHD2 tDDROCLR2Q tDDROREMCLR tDDRORECCLR tDDROWCLR1 tDDROCKMPWH tDDROCKMPWL FDDOMAX Description Clock-to-Out of DDR for Output DDR Data_F Data Setup for Output DDR Data_R Data Setup for Output DDR Data_F Data Hold for Output DDR Data_R Data Hold for Output DDR Asynchronous Clear-to-Out for Output DDR Asynchronous Clear Removal Time for Output DDR Asynchronous Clear Recovery Time for Output DDR Asynchronous Clear Minimum Pulse Width for Output DDR Clock Minimum Pulse Width High for the Output DDR Clock Minimum Pulse Width Low for the Output DDR Maximum Frequency for the Output DDR –2 0.70 0.38 0.38 0.00 0.00 0.80 0.00 0.22 0.22 0.36 0.32 1,048 –1 0.80 0.43 0.43 0.00 0.00 0.91 0.00 0.25 0.25 0.41 0.37 1,232 Std. 0.94 0.51 0.51 0.00 0.00 1.07 0.00 0.30 0.30 0.48 0.43 1,404 Units ns ns ns ns ns ns ns ns ns ns ns MHz Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. 2- 22 4 R e visio n 2 Fusion Family of Mixed Signal FPGAs Pin Descriptions Supply Pins GND Ground Ground supply voltage to the core, I/O outputs, and I/O logic. GNDQ Ground (quiet) Quiet ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is decoupled from the simultaneous switching noise originated from the output buffer ground domain. This minimizes the noise transfer within the package and improves input signal integrity. GNDQ needs to always be connected on the board to GND. Note: In FG256, FG484, and FG676 packages, GNDQ and GND pins are connected within the package and are labeled as GND pins in the respective package pin assignment tables. ADCGNDREF Analog Reference Ground Analog ground reference used by the ADC. This pad should be connected to a quiet analog ground. GNDA Ground (analog) Quiet ground supply voltage to the Analog Block of Fusion devices. The use of a separate analog ground helps isolate the analog functionality of the Fusion device from any digital switching noise. A 0.2 V maximum differential voltage between GND and GNDA/GNDQ should apply to system implementation. GNDAQ Ground (analog quiet) Quiet ground supply voltage to the analog I/O of Fusion devices. The use of a separate analog ground helps isolate the analog functionality of the Fusion device from any digital switching noise. A 0.2 V maximum differential voltage between GND and GNDA/GNDQ should apply to system implementation. Note: In FG256, FG484, and FG676 packages, GNDAQ and GNDA pins are connected within the package and are labeled as GNDA pins in the respective package pin assignment tables. GNDNVM Flash Memory Ground Ground supply used by the Fusion device's flash memory block module(s). GNDOSC Oscillator Ground Ground supply for both integrated RC oscillator and crystal oscillator circuit. VCC15A Analog Power Supply (1.5 V) 1.5 V clean analog power supply input for use by the 1.5 V portion of the analog circuitry. VCC33A Analog Power Supply (3.3 V) 3.3 V clean analog power supply input for use by the 3.3 V portion of the analog circuitry. VCC33N Negative 3.3 V Output This is the –3.3 V output from the voltage converter. A 2.2 µF capacitor must be connected from this pin to ground. VCC33PMP Analog Power Supply (3.3 V) 3.3 V clean analog power supply input for use by the analog charge pump. To avoid high current draw, VCC33PMP should be powered up simultaneously with or after VCC33A. VCCNVM Flash Memory Block Power Supply (1.5 V) 1.5 V power supply input used by the Fusion device's flash memory block module(s). To avoid high current draw, VCC should be powered up before or simultaneously with VCCNVM. VCCOSC Oscillator Power Supply (3.3 V) Power supply for both integrated RC oscillator and crystal oscillator circuit. The internal 100 MHz oscillator, powered by the VCCOSC pin, is needed for device programming, operation of the VDDN33 Revision 2 2- 225 Device Architecture pump, and eNVM operation. VCCOSC is off only when VCCA is off. VCCOSC must be powered whenever the Fusion device needs to function. VCC Core Supply Voltage Supply voltage to the FPGA core, nominally 1.5 V. VCC is also required for powering the JTAG state machine, in addition to VJTAG. Even when a Fusion device is in bypass mode in a JTAG chain of interconnected devices, both VCC and VJTAG must remain powered to allow JTAG signals to pass through the Fusion device. VCCIBx I/O Supply Voltage Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number. There are either four (AFS090 and AFS250) or five (AFS600 and AFS1500) I/O banks on the Fusion devices plus a dedicated VJTAG bank. Each bank can have a separate VCCI connection. All I/Os in a bank will run off the same VCCIBx supply. VCCI can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCI pins tied to GND. VCCPLA/B PLL Supply Voltage Supply voltage to analog PLL, nominally 1.5 V, where A and B refer to the PLL. AFS090 and AFS250 each have a single PLL. The AFS600 and AFS1500 devices each have two PLLs. Microsemi recommends tying VCCPLX to VCC and using proper filtering circuits to decouple VCC noise from PLL. If unused, VCCPLA/B should be tied to GND. VCOMPLA/B Ground for West and East PLL VCOMPLA is the ground of the west PLL (CCC location F) and VCOMPLB is the ground of the east PLL (CCC location C). VJTAG JTAG Supply Voltage Fusion devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power supply in a separate I/O bank gives greater flexibility in supply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used, the VJTAG pin together with the TRST pin could be tied to GND. It should be noted that VCC is required to be powered for JTAG operation; VJTAG alone is insufficient. If a Fusion device is in a JTAG chain of interconnected boards and it is desired to power down the board containing the Fusion device, this may be done provided both VJTAG and VCC to the Fusion part remain powered; otherwise, JTAG signals will not be able to transition the Fusion device, even in bypass mode. VPUMP Programming Supply Voltage Fusion devices support single-voltage ISP programming of the configuration flash and FlashROM. For programming, VPUMP should be in the 3.3 V +/-5% range. During normal device operation, VPUMP can be left floating or can be tied to any voltage between 0 V and 3.6 V. When the VPUMP pin is tied to ground, it shuts off the charge pump circuitry, resulting in no sources of oscillation from the charge pump circuitry. For proper programming, 0.01 µF and 0.33 µF capacitors (both rated at 16 V) are to be connected in parallel across VPUMP and GND, and positioned as close to the FPGA pins as possible. User-Defined Supply Pins VREF I/O Voltage Reference Reference voltage for I/O minibanks. Both AFS600 and AFS1500 (north bank only) support Microsemi Pro I/O. These I/O banks support voltage reference standard I/O. The VREF pins are configured by the user from regular I/Os, and any I/O in a bank, except JTAG I/Os, can be designated as the voltage reference I/O. Only certain I/O standards require a voltage reference—HSTL (I) and (II), SSTL2 (I) and (II), SSTL3 (I) and (II), and GTL/GTL+. One VREF pin can support the number of I/Os available in its minibank. 2- 22 6 R e visio n 2 Fusion Family of Mixed Signal FPGAs VAREF Analog Reference Voltage The Fusion device can be configured to generate a 2.56 V internal reference voltage that can be used by the ADC. While using the internal reference, the reference voltage is output on the VAREF pin for use as a system reference. If a different reference voltage is required, it can be supplied by an external source and applied to this pin. The valid range of values that can be supplied to the ADC is 1.0 V to 3.3 V. When VAREF is internally generated by the Fusion device, a bypass capacitor must be connected from this pin to ground. The value of the bypass capacitor should be between 3.3 µF and 22 µF, which is based on the needs of the individual designs. The choice of the capacitor value has an impact on the settling time it takes the VAREF signal to reach the required specification of 2.56 V to initiate valid conversions by the ADC. If the lower capacitor value is chosen, the settling time required for VAREF to achieve 2.56 V will be shorter than when selecting the larger capacitor value. The above range of capacitor values supports the accuracy specification of the ADC, which is detailed in the datasheet. Designers choosing the smaller capacitor value will not obtain as much margin in the accuracy as that achieved with a larger capacitor value. Depending on the capacitor value selected in the Analog System Builder, a tool in Libero IDE, an automatic delay circuit will be generated using logic tiles available within the FPGA to ensure that VAREF has achieved the 2.56 V value. Microsemi recommends customers use 10 µF as the value of the bypass capacitor. Designers choosing to use an external VAREF need to ensure that a stable and clean VAREF source is supplied to the VAREF pin before initiating conversions by the ADC. Designers should also make sure that the ADCRESET signal is deasserted before initiating valid conversions.2 User Pins I/O User Input/Output The I/O pin functions as an input, output, tristate, or bidirectional buffer. Input and output signal levels are compatible with the I/O standard selected. Unused I/O pins are configured as inputs with pull-up resistors. During programming, I/Os become tristated and weakly pulled up to VCCI. With the VCCI and VCC supplies continuously powered up, when the device transitions from programming to operating mode, the I/Os get instantly configured to the desired user configuration. Unused I/Os are configured as follows: • • • Axy Output buffer is disabled (with tristate value of high impedance) Input buffer is disabled (with tristate value of high impedance) Weak pull-up is programmed Analog Input/Output Analog I/O pin, where x is the analog pad type (C = current pad, G = Gate driver pad, T = Temperature pad, V = Voltage pad) and y is the Analog Quad number (0 to 9). There is a minimum 1 MΩ to ground on AV, AC, and AT. This pin can be left floating when it is unused. ATRTNx Temperature Monitor Return AT returns are the returns for the temperature sensors. The cathode terminal of the external diodes should be connected to these pins. There is one analog return pin for every two Analog Quads. The x in the ATRTNx designator indicates the quad pairing (x = 0 for AQ1 and AQ2, x = 1 for AQ2 and AQ3, ..., x = 4 for AQ8 and AQ9). The signals that drive these pins are called out as ATRETURNxy in the software (where x and y refer to the quads that share the return signal). ATRTN is internally connected to ground. It can be left floating when it is unused. The maximum capacitance allowed across the AT pins is 500 pF. GL Globals GL I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the global network (spines). Additionally, the global I/Os can be used as Pro I/Os since they have identical capabilities. Unused GL pins are configured as inputs with pull-up resistors. See more detailed descriptions of global I/O connectivity in the "Clock Conditioning Circuits" section on page 2-23. 2. The ADC is functional with an external reference down to 1V, however to meet the performance parameters highlighted in the datasheet refer to the VAREF specification in Table 3-2 on page 3-3. Revision 2 2- 227 Device Architecture Refer to the "User I/O Naming Convention" section on page 2-160 for a description of naming of global pins. JTAG Pins Fusion devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to operate, even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the Fusion part must be supplied to allow JTAG signals to transition the Fusion device. Isolating the JTAG power supply in a separate I/O bank gives greater flexibility with supply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used, the VJTAG pin together with the TRST pin could be tied to GND. TCK Test Clock Test clock input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pullup/-down resistor. If JTAG is not used, Microsemi recommends tying off TCK to GND or VJTAG through a resistor placed close to the FPGA pin. This prevents JTAG operation in case TMS enters an undesired state. Note that to operate at all VJTAG voltages, 500 Ω to 1 kΩ will satisfy the requirements. Refer to Table 2-183 for more information. Table 2-183 • Recommended Tie-Off Values for the TCK and TRST Pins VJTAG VJTAG at 3.3 V VJTAG at 2.5 V VJTAG at 1.8 V VJTAG at 1.5 V Notes: 1. Equivalent parallel resistance if more than one device is on JTAG chain. 2. The TCK pin can be pulled up/down. 3. The TRST pin can only be pulled down. TDI Test Data Input Tie-Off Resistance2, 3 200 Ω to 1 kΩ 200 Ω to 1 kΩ 500 Ω to 1 kΩ 500 Ω to 1 kΩ Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor on the TDI pin. TDO Test Data Output Serial output for JTAG boundary scan, ISP, and UJTAG usage. TMS Test Mode Select The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an internal weak pull-up resistor on the TMS pin. TRST Boundary Scan Reset Pin The TRST pin functions as an active low input to asynchronously initialize (or reset) the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pulldown resistor could be included to ensure the TAP is held in reset mode. The resistor values must be chosen from Table 2-183 and must satisfy the parallel resistance value requirement. The values in Table 2-183 correspond to the resistor recommended when a single device is used and to the equivalent parallel resistor when multiple devices are connected via a JTAG chain. In critical applications, an upset in the JTAG circuit could allow entering an undesired JTAG state. In such cases, Microsemi recommends tying off TRST to GND through a resistor placed close to the FPGA pin. Note that to operate at all VJTAG voltages, 500 Ω to 1 kΩ will satisfy the requirements. 2- 22 8 R e visio n 2 Fusion Family of Mixed Signal FPGAs Special Function Pins NC No Connect This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be left floating with no effect on the operation of the device. DC Don't Connect This pin should not be connected to any signals on the PCB. These pins should be left unconnected. NCAP Negative Capacitor Negative Capacitor is where the negative terminal of the charge pump capacitor is connected. A capacitor, with a 2.2 µF recommended value, is required to connect between PCAP and NCAP. PCAP Positive Capacitor Positive Capacitor is where the positive terminal of the charge pump capacitor is connected. A capacitor, with a 2.2 µF recommended value, is required to connect between PCAP and NCAP. PUB Push Button Push button is the connection for the external momentary switch used to turn on the 1.5 V voltage regulator and can be floating if not used. PTBASE Pass Transistor Base Pass Transistor Base is the control signal of the voltage regulator. This pin should be connected to the base of the external pass transistor used with the 1.5 V internal voltage regulator and can be floating if not used. PTEM Pass Transistor Emitter Pass Transistor Emitter is the feedback input of the voltage regulator. This pin should be connected to the emitter of the external pass transistor used with the 1.5 V internal voltage regulator and can be floating if not used. XTAL1 Crystal Oscillator Circuit Input Input to crystal oscillator circuit. Pin for connecting external crystal, ceramic resonator, RC network, or external clock input. When using an external crystal or ceramic oscillator, external capacitors are also recommended (Please refer to the crystal oscillator manufacturer for proper capacitor value). If using external RC network or clock input, XTAL1 should be used and XTAL2 left unconnected. In the case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the XTAL2 pin should be left floating. XTAL2 Crystal Oscillator Circuit Input Input to crystal oscillator circuit. Pin for connecting external crystal, ceramic resonator, RC network, or external clock input. When using an external crystal or ceramic oscillator, external capacitors are also recommended (Please refer to the crystal oscillator manufacturer for proper capacitor value). If using external RC network or clock input, XTAL1 should be used and XTAL2 left unconnected. In the case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the XTAL2 pin should be left floating. Security Fusion devices have a built-in 128-bit AES decryption core. The decryption core facilitates highly secure, in-system programming of the FPGA core array fabric and the FlashROM. The FlashROM and the FPGA core fabric can be programmed independently from each other, allowing the FlashROM to be updated without the need for change to the FPGA core fabric. The AES master key is stored in on-chip nonvolatile memory (flash). The AES master key can be preloaded into parts in a security-protected programming environment (such as the Microsemi in-house programming center), and then "blank" parts can be shipped to an untrusted programming or manufacturing center for final personalization with an AESencrypted bitstream. Late stage product changes or personalization can be implemented easily and with Revision 2 2- 229 Device Architecture high level security by simply sending a STAPL file with AES-encrypted data. Highly secure remote field updates over public networks (such as the Internet) are possible by sending and programming a STAPL file with AES-encrypted data. For more information, refer to the Fusion Security application note. 128-Bit AES Decryption The 128-bit AES standard (FIPS-197) block cipher is the National Institute of Standards and Technology (NIST) replacement for DES (Data Encryption Standard FIPS46-2). AES has been designed to protect sensitive government information well into the 21st century. It replaces the aging DES, which NIST adopted in 1977 as a Federal Information Processing Standard used by federal agencies to protect sensitive, unclassified information. The 128-bit AES standard has 3.4 × 1038 possible 128-bit key variants, and it has been estimated that it would take 1,000 trillion years to crack 128-bit AES cipher text using exhaustive techniques. Keys are stored (protected with security) in Fusion devices in nonvolatile flash memory. All programming files sent to the device can be authenticated by the part prior to programming to ensure that bad programming data is not loaded into the part that may possibly damage it. All programming verification is performed on-chip, ensuring that the contents of Fusion devices remain as secure as possible. AES decryption can also be used on the 1,024-bit FlashROM to allow for remote updates of the FlashROM contents. This allows for easy support of subscription model products and protects them with measures designed to provide the highest level of security available. See the application note Fusion Security for more details. AES for Flash Memory AES decryption can also be used on the flash memory blocks. This provides the best available security during update of the flash memory blocks. During runtime, the encrypted data can be clocked in via the JTAG interface. The data can be passed through the internal AES decryption engine, and the decrypted data can then be stored in the flash memory block. Programming Programming can be performed using various programming tools, such as Silicon Sculptor II (BP Micro Systems) or FlashPro3 (Microsemi). The user can generate STP programming files from the Designer software and can use these files to program a device. Fusion devices can be programmed in-system. During programming, VCCOSC is needed in order to power the internal 100 MHz oscillator. This oscillator is used as a source for the 20 MHz oscillator that is used to drive the charge pump for programming. ISP Fusion devices support IEEE 1532 ISP via JTAG and require a single VPUMP voltage of 3.3 V during programming. In addition, programming via a microcontroller in a target system can be achieved. Refer to the standard or the "In-System Programming (ISP) of Microsemi's Low Power Flash Devices Using FlashPro4/3/3X" chapter of the Fusion FPGA Fabric User’s Guide for more details. JTAG IEEE 1532 Programming with IEEE 1532 Fusion devices support the JTAG-based IEEE1532 standard for ISP. As part of this support, when a Fusion device is in an unprogrammed state, all user I/O pins are disabled. This is achieved by keeping the global IO_EN signal deactivated, which also has the effect of disabling the input buffers. Consequently, the SAMPLE instruction will have no effect while the Fusion device is in this unprogrammed state—different behavior from that of the ProASICPLUS® device family. This is done because SAMPLE is defined in the IEEE1532 specification as a noninvasive instruction. If the input buffers were to be enabled by SAMPLE temporarily turning on the I/Os, then it would not truly be a noninvasive instruction. Refer to the standard or the "In-System Programming (ISP) of Microsemi's Low Power Flash Devices Using FlashPro4/3/3X" chapter of the Fusion FPGA Fabric User’s Guide for more details. 2- 23 0 R e visio n 2 Fusion Family of Mixed Signal FPGAs Boundary Scan Fusion devices are compatible with IEEE Standard 1149.1, which defines a hardware architecture and the set of mechanisms for boundary scan testing. The basic Fusion boundary scan logic circuit is composed of the test access port (TAP) controller, test data registers, and instruction register (Figure 2144 on page 2-232). This circuit supports all mandatory IEEE 1149.1 instructions (EXTEST, SAMPLE/PRELOAD, and BYPASS) and the optional IDCODE instruction (Table 2-185 on page 2-232). Each test section is accessed through the TAP, which has five associated pins: TCK (test clock input), TDI, TDO (test data input and output), TMS (test mode selector), and TRST (test reset input). TMS, TDI, and TRST are equipped with pull-up resistors to ensure proper operation when no input data is supplied to them. These pins are dedicated for boundary scan test usage. Refer to the "JTAG Pins" section on page 2-228 for pull-up/-down recommendations for TDO and TCK pins. The TAP controller is a 4-bit state machine (16 states) that operates as shown in Figure 2-144 on page 2-232. The 1s and 0s represent the values that must be present on TMS at a rising edge of TCK for the given state transition to occur. IR and DR indicate that the instruction register or the data register is operating in that state. Table 2-184 • TRST and TCK Pull-Down Recommendations VJTAG VJTAG at 3.3 V VJTAG at 2.5 V VJTAG at 1.8 V VJTAG at 1.5 V Tie-Off Resistance* 200 Ω to 1 kΩ 200 Ω to 1 kΩ 500 Ω to 1 kΩ 500 Ω to 1 kΩ Note: *Equivalent parallel resistance if more than one device is on JTAG chain. The TAP controller receives two control inputs (TMS and TCK) and generates control and clock signals for the rest of the test logic architecture. On power-up, the TAP controller enters the Test-Logic-Reset state. To guarantee a reset of the controller from any of the possible states, TMS must remain High for five TCK cycles. The TRST pin can also be used to asynchronously place the TAP controller in the TestLogic-Reset state. Fusion devices support three types of test data registers: bypass, device identification, and boundary scan. The bypass register is selected when no other register needs to be accessed in a device. This speeds up test data transfer to other devices in a test data path. The 32-bit device identification register is a shift register with four fields (LSB, ID number, part number, and version). The boundary scan register observes and controls the state of each I/O pin. Each I/O cell has three boundary scan register cells, each with a serial-in, serial-out, parallel-in, and parallel-out pin. The serial pins are used to serially connect all the boundary scan register cells in a device into a boundary scan register chain, which starts at the TDI pin and ends at the TDO pin. The parallel ports are connected to the internal core logic I/O tile and the input, output, and control ports of an I/O buffer to capture and load data into the register to control or observe the logic state of each I/O. Revision 2 2- 231 Device Architecture I/O I/O I/O I/O I/O Test Data Registers TDI TCK TMS TAP Controller Instruction Register Device Logic TRST TDO I/O I/O I/O I/O I/O Figure 2-144 • Boundary Scan Chain in Fusion Table 2-185 • Boundary Scan Opcodes Hex Opcode EXTEST HIGHZ USERCODE SAMPLE/PRELOAD IDCODE CLAMP BYPASS 00 07 0E 01 0F 05 FF 2- 23 2 R e visio n 2 I/O I/O I/O I/O Bypass Register Fusion Family of Mixed Signal FPGAs IEEE 1532 Characteristics JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to the corresponding standard selected; refer to the I/O timing characteristics in the "User I/Os" section on page 2-134 for more details. Timing Characteristics Table 2-186 • JTAG 1532 Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter tDISU tDIHD tTMSSU tTMDHD tTCK2Q tRSTB2Q FTCKMAX tTRSTREM tTRSTREC tTRSTMPW Description Test Data Input Setup Time Test Data Input Hold Time Test Mode Select Setup Time Test Mode Select Hold Time Clock to Q (data out) Reset to Q (data out) TCK Maximum Frequency ResetB Removal Time ResetB Recovery Time ResetB Minimum Pulse –2 0.50 1.00 0.50 1.00 6.00 20.00 25.00 0.00 0.20 TBD –1 0.57 1.13 0.57 1.13 6.80 22.67 22.00 0.00 0.23 TBD Std. 0.67 1.33 0.67 1.33 8.00 26.67 19.00 0.00 0.27 TBD Units ns ns ns ns ns ns MHz ns ns ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on page 3-9. Revision 2 2- 233 3 – DC and Power Characteristics General Specifications Operating Conditions Stresses beyond those listed in Table 3-1 may cause permanent damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Devices should not be operated outside the recommended operating ranges specified in Table 3-2 on page 3-3. Table 3-1 • Absolute Maximum Ratings Symbol VCC VJTAG VPUMP VCCPLL VCCI VI Parameter DC core supply voltage JTAG DC voltage Programming voltage Analog power supply (PLL) DC I/O output buffer supply voltage I/O input voltage 1 Commercial –0.3 to 1.65 –0.3 to 3.75 –0.3 to 3.75 –0.3 to 1.65 –0.3 to 3.75 Industrial –0.3 to 1.65 –0.3 to 3.75 –0.3 to 3.75 –0.3 to 1.65 –0.3 to 3.75 Units V V V V V V –0.3 V to 3.6 V (when I/O hot insertion mode is enabled) –0.3 V to (VCCI + 1 V) or 3.6 V, whichever voltage is lower (when I/O hot-insertion mode is disabled) –0.3 to 3.75 2 –0.3 to 3.75 2 –0.3 to 3.75 –0.3 to 1.65 –0.3 to 1.65 –0.3 to 3.75 –0.3 to 3.75 2 –0.3 to 3.75 2 –0.3 to 3.75 –0.3 to 1.65 –0.3 to 1.65 –0.3 to 3.75 VCC33A +3.3 V power supply V V V V V V VCC33PMP +3.3 V power supply VAREF VCC15A VCCNVM VCCOSC Notes: Voltage reference for ADC Digital power supply for the analog system Embedded flash power supply Oscillator power supply 1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 3-4 on page 3-4. 2. Analog data not valid beyond 3.65 V. 3. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on voltage on the pad. 4. For flash programming and retention maximum limits, refer to Table 3-5 on page 3-5. For recommended operating limits refer to Table 3-2 on page 3-3. Revision 2 3 -1 DC and Power Characteristics Table 3-1 • Absolute Maximum Ratings (continued) Symbol AV, AC Unpowered, unconfigured Parameter ADC reset asserted or Commercial –11.0 to 12.6 –0.4 to 12.6 –0.4 to 3.75 –11.0 to 0.4 –3.75 to 0.4 –0.4 to 3.75 –0.4 to 12.6 ADC reset asserted or –11.0 to 12.6 –0.4 to 12.6 –11.0 to 0.4 –11.0 to 12.6 reset asserted or –0.4 to 16.0 –0.4 to 16.0 –0.4 to 3.75 –0.4 to 16.0 Industrial –11.0 to 12.0 –0.4 to 12.0 –0.4 to 3.75 –11.0 to 0.4 –3.75 to 0.4 –0.4 to 3.75 –0.4 to 12.0 –11.0 to 12.0 –0.4 to 12.0 –11.0 to 0.4 –11.0 to 12.0 –0.4 to 15.0 –0.4 to 15.0 –0.4 to 3.75 –0.4 to 15.0 –65 to +150 +125 Units V V V V V V V V V V V V V V V °C °C Analog input (+16 V to +2 V prescaler range) Analog input (+1 V to +0.125 V prescaler range) Analog input (–16 V to –2 V prescaler range) Analog input (–1 V to –0.125 V prescaler range) Analog input (direct input to ADC) Digital input AG Unpowered, unconfigured Low Current Mode (1 µA, 3 µA, 10 µA, 30 µA) Low Current Mode (–1 µA, –3 µA, –10 µA, –30 µA) High Current Mode 3 AT Unpowered, unconfigured ADC Analog input (+16 V, 4 V prescaler range) Analog input (direct input to ADC) Digital input TSTG 4 TJ 4 Storage temperature Junction temperature Notes: 1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 3-4 on page 3-4. 2. Analog data not valid beyond 3.65 V. 3. The high current mode has a maximum power limit of 20 mW. Appropriate current limit resistors must be used, based on voltage on the pad. 4. For flash programming and retention maximum limits, refer to Table 3-5 on page 3-5. For recommended operating limits refer to Table 3-2 on page 3-3. 3-2 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Table 3-2 • Recommended Operating Conditions Symbol TJ VCC VJTAG VPUMP VCCPLL VCCI Junction temperature 1.5 V DC core supply voltage JTAG DC voltage Programming voltage Analog power supply (PLL) 1.5 V DC supply voltage 1.8 V DC supply voltage 2.5 V DC supply voltage 3.3 V DC supply voltage LVDS differential I/O LVPECL differential I/O VCC33A VAREF VCC15A 6 VCCNVM VCCOSC AV, AC 4 +3.3 V power supply Voltage reference for ADC Digital power supply for the analog system Embedded flash power supply Oscillator power supply Unpowered, ADC reset asserted or unconfigured Analog input (+16 V to +2 V prescaler range) Analog input (+1 V to + 0.125 V prescaler range) Analog input (–16 V to –2 V prescaler range) Analog input (–1 V to –0.125 V prescaler range) Analog input (direct input to ADC) Digital input AG 4 Unpowered, ADC reset asserted or unconfigured Low Current Mode (1 µA, 3 µA, 10 µA, 30 µA) Low Current Mode (–1 µA, –3 µA, –10 µA, –30 µA) High Current Mode 5 AT 4 Unpowered, ADC reset asserted or unconfigured Analog input (+16 V, +4 V prescaler range) Analog input (direct input to ADC) Digital input Notes: 1. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O standard are given in Table 2-85 on page 2-159. 2. All parameters representing voltages are measured with respect to GND unless otherwise specified. 3. VPUMP can be left floating during normal operation (not programming mode). 4. The input voltage may overshoot by up to 500 mV above the Recommended Maximum (150 mV in Direct mode), provided the duration of the overshoot is less than 50% of the operating lifetime of the device. 5. The AG pad should also conform to the limits as specified in Table 2-48 on page 2-116. 6. Violating the VCC15A recommended voltage supply during an embedded flash program cycle can corrupt the page being programmed. Parameter Commercial 0 to +85 1.425 to 1.575 1.4 to 3.6 Programming mode Operation3 3.15 to 3.45 0 to 3.6 1.425 to 1.575 1.425 to 1.575 1.7 to 1.9 2.3 to 2.7 3.0 to 3.6 2.375 to 2.625 3.0 to 3.6 2.97 to 3.63 2.97 to 3.63 2.527 to 2.593 1.425 to 1.575 1.425 to 1.575 2.97 to 3.63 –10.5 to 12.0 –0.3 to 12.0 –0.3 to 3.6 –10.5 to 0.3 –3.6 to 0.3 –0.3 to 3.6 –0.3 to 12.0 –10.5 to 12.0 –0.3 to 12.0 –10.5 to 0.3 –10.5 to 12.0 –0.3 to 15.5 –0.3 to 15.5 –0.3 to 3.6 –0.3 to 15.5 Industrial –40 to +100 1.425 to 1.575 1.4 to 3.6 3.15 to 3.45 0 to 3.6 1.425 to 1.575 1.425 to 1.575 1.7 to 1.9 2.3 to 2.7 3.0 to 3.6 2.375 to 2.625 3.0 to 3.6 2.97 to 3.63 2.97 to 3.63 2.527 to 2.593 1.425 to 1.575 1.425 to 1.575 2.97 to 3.63 –10.5 to 11.6 –0.3 to 11.6 –0.3 to 3.6 –10.5 to 0.3 –3.6 to 0.3 –0.3 to 3.6 –0.3 to 11.6 –10.5 to 11.6 –0.3 to 11.6 –10.5 to 0.3 –10.5 to 11.6 –0.3 to 14.5 –0.3 to 14.5 –0.3 to 3.6 –0.3 to 14.5 Units °C V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V VCC33PMP +3.3 V power supply Revision 2 3 -3 DC and Power Characteristics Table 3-3 • Input Resistance of Analog Pads Pads AV, AC Pad Configuration Analog Input (direct input to ADC) Prescaler Range – – Analog Input (positive prescaler) +16 V to +2 V +1 V to +0.125 V Analog Input (negative prescaler) –16 V to –2 V –1 V to –0.125 V Digital input Current monitor +16 V to +2 V +16 V to +2 V –16 V to –2 V AT Analog Input (direct input to ADC) Analog Input (positive prescaler) Digital input Temperature monitor Table 3-4 • Overshoot and Undershoot Limits 1 VCCI 2.7 V or less Average VCCI–GND Overshoot or Undershoot Duration as a Percentage of Clock Cycle2 10% 5% 3.0 V 10% 5% 3.3 V 10% 5% 3.6 V 10% 5% Notes: 1. Based on reliability requirements at a junction temperature of 85°C. 2. The duration is allowed at one cycle out of six clock cycle. If the overshoot/undershoot occurs at one out of two cycles, the maximum overshoot/undershoot has to be reduced by 0.15 V. Input Resistance to Ground 2 kΩ (typical) > 10 MΩ 1 MΩ (typical) > 10 MΩ 1 MΩ (typical) > 10 MΩ 1 MΩ (typical) 1 MΩ (typical) 1 MΩ (typical) 1 MΩ (typical) 1 MΩ (typical) 1 MΩ (typical) > 10 MΩ – +16 V, +4 V +16 V, +4 V +16 V, +4 V Maximum Overshoot/ Undershoot2 1.4 V 1.49 V 1.1 V 1.19 V 0.79 V 0.88 V 0.45 V 0.54 V 3-4 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Table 3-5 • FPGA Programming, Storage, and Operating Limits Product Grade Commercial Storage Temperature Min. TJ = 0°C Max. TJ = 85°C Element FPGA/FlashROM Embedded Flash Grade Programming Cycles 500 < 1,000 < 10,000 < 15,000 Industrial Min. TJ = –40°C Max. TJ = 100°C FPGA/FlashROM Embedded Flash 500 < 1,000 < 10,000 < 15,000 Retention 20 years 20 years 10 years 5 years 20 years 20 years 10 years 5 years I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial) Sophisticated power-up management circuitry is designed into every Fusion device. These circuits ensure easy transition from the powered off state to the powered up state of the device. The many different supplies can power up in any sequence with minimized current spikes or surges. In addition, the I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 3-1 on page 3-6. There are five regions to consider during power-up. Fusion I/Os are activated only if ALL of the following three conditions are met: 1. VCC and VCCI are above the minimum specified trip points (Figure 3-1). 2. VCCI > VCC – 0.75 V (typical). 3. Chip is in the operating mode. VCCI Trip Point: Ramping up: 0.6 V < trip_point_up < 1.2 V Ramping down: 0.5 V < trip_point_down < 1.1 V VCC Trip Point: Ramping up: 0.6 V < trip_point_up < 1.1 V Ramping down: 0.5 V < trip_point_down < 1 V VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following: • • During programming, I/Os become tristated and weakly pulled up to VCCI. JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O behavior. Internal Power-Up Activation Sequence 1. Core 2. Input buffers 3. Output buffers, after 200 ns delay from input buffer activation PLL Behavior at Brownout Condition Microsemi recommends using monotonic power supplies or voltage regulators to ensure proper powerup behavior. Power ramp-up should be monotonic at least until VCC and VCCPLX exceed brownout activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 3-1 on page 3-6 for more details). When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25 V), the PLL output lock signal goes low and/or the output clock is lost. Revision 2 3 -5 DC and Power Characteristics VCC = VCCI + VT VCC VCC = 1.575 V Region 4: I/O buffers are ON. I/Os are functional (except differential inputs) but slower because VCCI is below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. Region 5: I/O buffers are ON and power supplies are within specification. I/Os meet the entire datasheet and timer specifications for speed, VIH / VIL, VOH VOL, etc. Where VT can be from 0.58 V to 0.9 V (typically 0.75 V) Region 1: I/O Buffers are OFF VCC = 1.425 V Region 2: I/O buffers are ON. I/Os are functional (except differential inputs) but slower because VCCI / VCC are below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. Activation trip point: Va = 0.85 V ± 0.25 V Deactivation trip point: Vd = 0.75 V ± 0.25 V Region 3: I/O buffers are ON. I/Os are functional; I/O DC specifications are met, but I/Os are slower because the VCC is below specification Region 1: I/O buffers are OFF Activation trip point: Va = 0.9 V ±0.3 V Deactivation trip point: Vd = 0.8 V ± 0.3 V Min VCCI datasheet specification voltage at a selected I/O standard; i.e., 1.425 V or 1.7 V or 2.3 V or 3.0 V VCCI Figure 3-1 • I/O State as a Function of VCCI and VCC Voltage Levels 3-6 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Thermal Characteristics Introduction The temperature variable in the Microsemi Designer software refers to the junction temperature, not the ambient, case, or board temperatures. This is an important distinction because dynamic and static power consumption will cause the chip's junction temperature to be higher than the ambient, case, or board temperatures. EQ 1 through EQ 3 give the relationship between thermal resistance, temperature gradient, and power. T J – θA θ JA = ----------------P EQ 1 TJ – TB θ JB = -----------------P EQ 2 θ JC TJ – TC = -----------------P EQ 3 where θJA = Junction-to-air thermal resistance θJB = Junction-to-board thermal resistance θJC = Junction-to-case thermal resistance TJ TA TB TC P = Junction temperature = Ambient temperature = Board temperature (measured 1.0 mm away from the package edge) = Case temperature = Total power dissipated by the device Table 3-6 • Package Thermal Resistance Die Size Product AFS090-QN108 AFS090-QN180 AFS250-QN180 AFS250-PQ208 AFS600-PQ208 AFS090-FG256 AFS250-FG256 AFS600-FG256 AFS1500-FG256 AFS600-FG484 AFS1500-FG484 AFS1500-FG676 (mm) X = 3.4; Y = 4.8 X = 3.4; Y = 4.8 X = 4.0; Y = 5.6 TBD TBD X = 3.4; Y = 4.8 X = 4.0; Y = 5.6 X = 5.10; Y = 7.3 X = 7.62; Y = 9.98 X = 5.10; Y = 7.3 X = 7.62; Y = 9.98 TBD Still Air 34.5 33.3 32.2 TBD TBD 37.7 33.7 28.9 23.3 21.8 21.6 TBD θJA 1.0 m/s 30.0 27.6 26.5 TBD TBD 33.9 30.0 25.2 19.6 18.2 16.8 TBD 2.5 m/s 27.7 25.7 24.7 TBD TBD 32.2 28.3 23.5 18.0 16.7 15.2 TBD θJC 8.1 9.2 5.7 TBD TBD 11.5 9.3 6.8 4.3 7.7 5.6 TBD θJB 16.7 21.2 15.0 TBD TBD 29.7 24.8 19.9 14.2 16.8 14.9 TBD Units °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W Revision 2 3 -7 DC and Power Characteristics Theta-JA Junction-to-ambient thermal resistance (θJA) is determined under standard conditions specified by JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with caution but is useful for comparing the thermal performance of one package to another. A sample calculation showing the maximum power dissipation allowed for the AFS600-FG484 package under forced convection of 1.0 m/s and 75°C ambient temperature is as follows: T J(MAX) – T A(MAX) Maximum Power Allowed = -------------------------------------------θ JA EQ 4 where θJA TA = 19.00°C/W (taken from Table 3-6 on page 3-7). = 75.00°C 100.00°C – 75.00°C Maximum Power Allowed = ---------------------------------------------------- = 1.3 W 19.00°C/W EQ 5 The power consumption of a device can be calculated using the Microsemi power calculator. The device's power consumption must be lower than the calculated maximum power dissipation by the package. If the power consumption is higher than the device's maximum allowable power dissipation, a heat sink can be attached on top of the case, or the airflow inside the system must be increased. Theta-JB Junction-to-board thermal resistance (θJB) measures the ability of the package to dissipate heat from the surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a JEDEC standard board with a minimum distance of 5.0 mm away from the package edge. Theta-JC Junction-to-case thermal resistance (θJC) measures the ability of a device to dissipate heat from the surface of the chip to the top or bottom surface of the package. It is applicable for packages used with external heat sinks. Constant temperature is applied to the surface in consideration and acts as a boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through the surface in consideration. Calculation for Heat Sink For example, in a design implemented in an AFS600-FG484 package with 2.5 m/s airflow, the power consumption value using the power calculator is 3.00 W. The user-dependent Ta and Tj are given as follows: TJ = 100.00°C 70.00°C TA = From the datasheet: θJA θJC = = 17.00°C/W 8.28°C/W TJ – TA 100°C – 70°C P = ------------------ = ----------------------------------- = 1.76 W θ JA 17.00 W EQ 6 3-8 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs The 1.76 W power is less than the required 3.00 W. The design therefore requires a heat sink, or the airflow where the device is mounted should be increased. The design's total junction-to-air thermal resistance requirement can be estimated by EQ 7: TJ – TA 100°C – 70°C θ ja(total) = ------------------ = ----------------------------------- = 10.00°C/W P 3.00 W EQ 7 Determining the heat sink's thermal performance proceeds as follows: θ JA(TOTAL) = θ JC + θ CS + θ SA EQ 8 where θJA = = 0.37°C/W Thermal resistance of the interface material between the case and the heat sink, usually provided by the thermal interface manufacturer Thermal resistance of the heat sink in °C/W θ SA = θ JA(TOTAL) – θ JC – θ CS EQ 9 θ SA = 13.33°C/W – 8.28°C/W – 0.37°C/W = 5.01°C/W A heat sink with a thermal resistance of 5.01°C/W or better should be used. Thermal resistance of heat sinks is a function of airflow. The heat sink performance can be significantly improved with increased airflow. Carefully estimating thermal resistance is important in the long-term reliability of an Microsemi FPGA. Design engineers should always correlate the power consumption of the device with the maximum allowable power dissipation of the package selected for that device. Note: The junction-to-air and junction-to-board thermal resistances are based on JEDEC standard (JESD-51) and assumptions made in building the model. It may not be realized in actual application and therefore should be used with a degree of caution. Junction-to-case thermal resistance assumes that all power is dissipated through the case. θSA = Temperature and Voltage Derating Factors Table 3-7 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 70°C, Worst-Case VCC = 1.425 V) Array Voltage VCC (V) 1.425 1.500 1.575 Junction Temperature (°C) –40°C 0.88 0.83 0.80 0°C 0.93 0.88 0.85 25°C 0.95 0.90 0.87 70°C 1.00 0.95 0.91 85°C 1.02 0.96 0.93 100°C 1.05 0.99 0.96 Revision 2 3 -9 DC and Power Characteristics Calculating Power Dissipation Quiescent Supply Current Table 3-8 • AFS1500 Quiescent Supply Current Characteristics Parameter ICC1 Description 1.5 V quiescent current Conditions Operational standby4, VCC = 1.575 V Temp. TJ = 25°C TJ = 85°C TJ = 100°C Standby mode or Sleep mode , VCC = 0 V ICC332 3.3 V analog supplies current Operational standby4, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Operational standby, only Analog Quad and –3.3 V output ON, VCC33 = 3.63 V Standby mode VCC33 = 3.63 V 5, 5 6 Min. Typ. 20 32 59 0 9.8 10.7 10.8 0.31 0.35 0.45 2.9 2.9 3.3 17 18 24 417 417 417 Max. 40 65 120 0 13 14 15 2 2 2 3.6 4 6 19 20 25 649 649 649 Unit mA mA mA µA mA mA mA mA mA mA mA mA mA µA µA µA µA µA µA TJ = 25°C TJ = 85°C TJ = 100°C TJ = 25°C TJ = 85°C TJ = 100°C Sleep mode6, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C ICCI 3 I/O quiescent current Operational TJ = 25°C Standby mode, and Sleep Mode6, TJ = 85°C VCCIx = 3.63 V TJ = 100°C standby4, Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC and ICC15A. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. 3- 10 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-8 • AFS1500 Quiescent Supply Current Characteristics (continued) Parameter IJTAG Description JTAG I/O quiescent current Conditions Operational standby , VJTAG = 3.63 V 4 Temp. TJ = 25°C TJ = 85°C TJ = 100°C 6 Min. Typ. 80 80 80 0 Max. 100 100 100 0 80 80 80 0 150 150 150 200 200 200 Unit µA µA µA µA µA µA µA µA µA µA µA µA µA µA Standby mode or Sleep mode , VJTAG = 0 V IPP Programming supply current Non-programming mode, VPUMP = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Standby mode or Sleep mode , VPUMP = 0 V ICCNVM Embedded NVM current Reset asserted, VCCNVM = 1.575 V TJ = 25°C TJ =85°C TJ = 100°C ICCPLL 1.5 V PLL quiescent current Operational standby , VCCPLL = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C Notes: 1. 2. 3. 4. 5 6 5 39 40 40 0 50 50 50 130 130 130 ICC is the 1.5 V power supplies, ICC and ICC15A. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. Revision 2 3- 11 DC and Power Characteristics Table 3-9 • AFS600 Quiescent Supply Current Characteristics Parameter ICC 1 Description 1.5 V quiescent current Conditions Operational standby , VCC = 1.575 V 4 Temp. TJ = 25°C TJ = 85°C TJ=100°C Min Typ 13 20 25 0 Max 25 45 75 0 13 14 15 2 2 2 3.6 4 6 19 20 25 648 648 649 100 100 100 0 Unit mA mA mA µA mA mA mA mA mA mA mA mA mA µA µA µA µA µA µA µA µA µA µA Standby mode or Sleep mode6, VCC = 0 V ICC332 3.3 V analog supplies current Operational standby4, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Operational standby, TJ = 25°C only Analog Quad and –3.3 V TJ = 85°C output ON, VCC33 = 3.63 V TJ = 100°C Standby mode5, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Sleep mode VCC33 = 3.63 V 6, 5 9.8 10.7 10.8 0.31 0.35 0.45 2.8 2.9 3.5 17 18 24 417 417 417 80 80 80 0 TJ = 25°C TJ = 85°C TJ = 100°C ICCI 3 I/O quiescent current Operational VCCIx = 3.63 V standby4, TJ = 25°C TJ = 85°C TJ = 100°C IJTAG JTAG I/O quiescent current Operational standby VJTAG = 3.63 V 4, TJ = 25°C TJ = 85°C TJ = 100°C Standby mode5 or Sleep mode6, VJTAG = 0 V Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC and ICC15A. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. 3- 12 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-9 • AFS600 Quiescent Supply Current Characteristics (continued) Parameter IPP Description Programming supply current Conditions Non-programming mode, VPUMP = 3.63 V Temp. TJ = 25°C TJ = 85°C TJ = 100°C Standby mode or Sleep mode6, VPUMP = 0 V ICCNVM Embedded NVM current Reset asserted, VCCNVM = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C ICCPLL 1.5 V PLL quiescent current Operational standby, VCCPLL = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC and ICC15A. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, ICCI2, and ICCI4. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. 5 Min Typ 36 36 36 0 22 24 25 130 130 130 Max 80 80 80 0 80 80 80 200 200 200 Unit µA µA µA µA µA µA µA µA µA µA Revision 2 3- 13 DC and Power Characteristics Table 3-10 • AFS250 Quiescent Supply Current Characteristics Parameter ICC 1 Description 1.5 V quiescent current Conditions Operational standby , VCC = 1.575 V 4 Temp. TJ = 25°C TJ = 85°C TJ = 100°C Min Typ 4.8 8.2 15 0 Max 10 30 50 0 13 14 15 2 2 2 3.0 3.1 6 18 20 25 437 437 437 100 100 100 0 Unit mA mA mA µA mA mA mA mA mA mA mA mA mA µA µA µA µA µA µA µA µA µA µA Standby mode or Sleep mode6, VCC = 0 V ICC332 3.3 V analog supplies current Operational standby4, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Operational standby, only Analog Quad and –3.3 V output ON, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Standby mode5, VCC33 = 3.63V TJ = 25°C TJ = 85°C TJ = 100°C Sleep mode VCC33 = 3.63 V 6, 5 9.8 9.8 10.8 0.29 0.31 0.45 2.9 2.9 3.5 19 19 24 266 266 266 80 80 80 0 TJ = 25°C TJ = 85°C TJ = 100°C ICCI 3 I/O quiescent current Operational VCCIx = 3.63 V standby6, TJ = 25°C TJ = 85°C TJ = 100°C IJTAG JTAG I/O quiescent current Operational standby VJTAG = 3.63 V 4, TJ = 25°C TJ = 85°C TJ = 100°C Standby mode5 or Sleep mode6, VJTAG = 0 V Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, and ICCI2. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTA G = VPUMP = 0 V. 3- 14 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-10 • AFS250 Quiescent Supply Current Characteristics (continued) Parameter IPP Description Programming supply current Conditions Non-programming mode, VPUMP = 3.63 V Temp. TJ = 25°C TJ = 85°C TJ = 100°C Standby mode or Sleep mode6, VPUMP = 0 V ICCNVM Embedded NVM current Reset asserted, VCCNVM = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C ICCPLL 1.5 V PLL quiescent current Operational standby, VCCPLL = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, and ICCI2. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTA G = VPUMP = 0 V. 5 Min Typ 37 37 80 0 10 14 14 65 65 65 Max 80 80 100 0 40 40 40 100 100 100 Unit µA µA µA µA µA µA µA µA µA µA Revision 2 3- 15 DC and Power Characteristics Table 3-11 • AFS090 Quiescent Supply Current Characteristics Parameter ICC 1 Description 1.5 V quiescent current Conditions Operational standby , VCC = 1.575 V 4 Temp. TJ = 25°C TJ = 85°C TJ = 100°C Min Typ 5 6.5 14 0 Max 7.5 20 48 0 12 12 15 2 2 2 2.9 3.0 6 18 20 25 437 437 437 100 100 100 0 80 80 100 0 Unit mA mA mA µA mA mA mA mA mA mA mA mA mA µA µA µA µA µA µA µA µA µA µA µA µA µA µA Standby mode or Sleep mode6, VCC = 0 V ICC332 3.3 V analog supplies current Operational standby4, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Operational standby, only Analog Quad and –3.3 V output ON, VCC33 = 3.63 V Standby mode5, VCC33 = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C TJ = 25°C TJ = 85°C TJ = 100°C Sleep mode VCC33 = 3.63 V 6, 5 9.8 9.8 10.7 0.30 0.30 0.45 2.9 2.9 3.5 17 18 24 260 260 260 80 80 80 0 TJ = 25°C TJ = 85°C TJ = 100°C ICCI 3 I/O quiescent current Operational VCCIx = 3.63 V standby6, TJ = 25°C TJ = 85°C TJ = 100°C IJTAG JTAG I/O quiescent current Operational standby VJTAG = 3.63 V 4, TJ = 25°C TJ = 85°C TJ = 100°C Standby mode5 or Sleep mode6, VJTAG = 0 V IPP Programming supply current Non-programming mode, VPUMP = 3.63 V TJ = 25°C TJ = 85°C TJ = 100°C Standby mode or Sleep mode6, VPUMP = 0 V Notes: 1. 2. 3. 4. 5 37 37 80 0 ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, and ICCI2. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. 3- 16 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-11 • AFS090 Quiescent Supply Current Characteristics (continued) Parameter ICCNVM Description Embedded NVM current Conditions Reset asserted, VCCNVM = 1.575 V Temp. TJ = 25°C TJ = 85°C TJ = 100°C ICCPLL 1.5 V PLL quiescent current Operational standby, VCCPLL = 1.575 V TJ = 25°C TJ = 85°C TJ = 100°C Notes: 1. 2. 3. 4. ICC is the 1.5 V power supplies, ICC, ICCPLL, ICC15A, ICCNVM. ICC33A includes ICC33A, ICC33PMP, and ICCOSC. ICCI includes all ICCI0, ICCI1, and ICCI2. Operational standby is when the Fusion device is powered up, all blocks are used, no I/O is toggling, Voltage Regulator is loaded with 200 mA, VCC33PMP is ON, XTAL is ON, and ADC is ON. 5. XTAL is configured as high gain, VCC = VJTAG = VPUMP = 0 V. 6. Sleep Mode, VCC = VJTAG = VPUMP = 0 V. Min Typ 10 14 14 65 65 65 Max 40 40 40 100 100 100 Unit µA µA µA µA µA µA Revision 2 3- 17 DC and Power Characteristics Power per I/O Pin Table 3-12 • Summary of I/O Input Buffer Power (per pin)—Default I/O Software Settings VCCI (V) Applicable to Pro I/O Banks Single-Ended 3.3 V LVTTL/LVCMOS 3.3 V LVTTL/LVCMOS – Schmitt trigger 2.5 V LVCMOS 2.5 V LVCMOS – Schmitt trigger 1.8 V LVCMOS 1.8 V LVCMOS – Schmitt trigger 1.5 V LVCMOS (JESD8-11) 1.5 V LVCMOS (JESD8-11) – Schmitt trigger 3.3 V PCI 3.3 V PCI – Schmitt trigger 3.3 V PCI-X 3.3 V PCI-X – Schmitt trigger Voltage-Referenced 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) Differential LVDS LVPECL Notes: 1. PDC7 is the static power (where applicable) measured on VCCI. 2. PAC9 is the total dynamic power measured on VCC and VCCI. Static Power PDC7 (mW)1 Dynamic Power PAC9 (µW/MHz)2 3.3 3.3 2.5 2.5 1.8 1.8 1.5 1.5 3.3 3.3 3.3 3.3 – – – – – – – – – – – – 17.39 25.51 5.76 7.16 2.72 2.80 2.08 2.00 18.82 20.12 18.82 20.12 3.3 2.5 3.3 2.5 1.5 1.5 2.5 2.5 3.3 3.3 2.90 2.13 2.81 2.57 0.17 0.17 1.38 1.38 3.21 3.21 8.23 4.78 4.14 3.71 2.03 2.03 4.48 4.48 9.26 9.26 2.5 3.3 2.26 5.71 1.50 2.17 3- 18 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-12 • Summary of I/O Input Buffer Power (per pin)—Default I/O Software Settings (continued) VCCI (V) Applicable to Advanced I/O Banks Single-Ended 3.3 V LVTTL/LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS (JESD8-11) 3.3 V PCI 3.3 V PCI-X Differential LVDS LVPECL Applicable to Standard I/O Banks 3.3 V LVTTL/LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS (JESD8-11) Notes: 1. PDC7 is the static power (where applicable) measured on VCCI. 2. PAC9 is the total dynamic power measured on VCC and VCCI. Static Power PDC7 (mW)1 Dynamic Power PAC9 (µW/MHz)2 3.3 2.5 1.8 1.5 3.3 3.3 – – – – – – 16.69 5.12 2.13 1.45 18.11 18.11 2.5 3.3 2.26 5.72 1.20 1.87 3.3 2.5 1.8 1.5 – – – – 16.79 5.19 2.18 1.52 Revision 2 3- 19 DC and Power Characteristics Table 3-13 • Summary of I/O Output Buffer Power (per pin)—Default I/O Software Settings1 CLOAD (pF) Applicable to Pro I/O Banks Single-Ended 3.3 V LVTTL/LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS (JESD8-11) 3.3 V PCI 3.3 V PCI-X Voltage-Referenced 3.3 V GTL 2.5 V GTL 3.3 V GTL+ 2.5 V GTL+ HSTL (I) HSTL (II) SSTL2 (I) SSTL2 (II) SSTL3 (I) SSTL3 (II) Differential LVDS LVPECL Applicable to Advanced I/O Banks Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS (JESD8-11) 3.3 V PCI 3.3 V PCI-X Notes: 1. Dynamic power consumption is given for standard load and software-default drive strength and output slew. 2. PDC8 is the static power (where applicable) measured on VCCI. 3. PAC10 is the total dynamic power measured on VCC and VCCI. VCCI (V) Static Power PDC8 (mW)2 Dynamic Power PAC10 (µW/MHz)3 35 35 35 35 10 10 3.3 2.5 1.8 1.5 3.3 3.3 – – – – – – 474.70 270.73 151.78 104.55 204.61 204.61 10 10 10 10 20 20 30 30 30 30 3.3 2.5 3.3 2.5 1.5 1.5 2.5 2.5 3.3 3.3 – – – – 7.08 13.88 16.69 25.91 26.02 42.21 24.08 13.52 24.10 13.54 26.22 27.22 105.56 116.60 114.87 131.76 – – 2.5 3.3 7.70 19.42 89.62 168.02 35 35 35 35 10 10 3.3 2.5 1.8 1.5 3.3 3.3 – – – – – – 468.67 267.48 149.46 103.12 201.02 201.02 3- 20 R e visio n 2 Fusion Family of Mixed Signal FPGAs Table 3-13 • Summary of I/O Output Buffer Power (per pin)—Default I/O Software Settings1 (continued) CLOAD (pF) Differential LVDS LVPECL Applicable to Standard I/O Banks Single-Ended 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS (JESD8-11) Notes: 1. Dynamic power consumption is given for standard load and software-default drive strength and output slew. 2. PDC8 is the static power (where applicable) measured on VCCI. 3. PAC10 is the total dynamic power measured on VCC and VCCI. VCCI (V) Static Power PDC8 (mW)2 Dynamic Power PAC10 (µW/MHz)3 – – 2.5 3.3 7.74 19.54 88.92 166.52 35 35 35 35 3.3 2.5 1.8 1.5 – – – – 431.08 247.36 128.46 89.46 Revision 2 3- 21 DC and Power Characteristics Dynamic Power Consumption of Various Internal Resources Table 3-14 • Different Components Contributing to the Dynamic Power Consumption in Fusion Devices Power Supply Parameter PAC1 PAC2 PAC3 PAC4 PAC5 PAC6 Definition Clock contribution of a Global Rib Clock contribution of a Global Spine Clock contribution of a VersaTile row Clock contribution of a VersaTile used as a sequential module First contribution of a VersaTile used as a sequential module Second contribution of a VersaTile used as a sequential module Contribution of a VersaTile used as a combinatorial module Average contribution of a routing net Contribution of an I/O input pin (standard dependent) Contribution of an I/O output pin (standard dependent) Average contribution of a RAM block during a read operation Average contribution of a RAM block during a write operation Dynamic Contribution for PLL Contribution of NVM block during a read operation (F < 33MHz) 1st contribution of NVM block during a read operation (F > 33 MHz) 2nd contribution of NVM block during a read operation (F > 33 MHz) Crystal Oscillator contribution RC Oscillator contribution Analog Block dynamic power contribution of ADC Name VCC VCC VCC VCC VCC VCC 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 14.5 2.5 Device-Specific Dynamic Contributions AFS600 12.8 1.9 0.81 0.11 0.07 0.29 AFS250 AFS090 11 1.6 11 0.8 Units µW/MHz µW/MHz µW/MHz µW/MHz µW/MHz µW/MHz Setting AFS1500 PAC7 PAC8 PAC9 PAC10 PAC11 PAC12 PAC13 PAC15 PAC16 VCC VCC VCCI VCCI VCC VCC VCC VCC VCC 1.5 V 1.5 V 0.29 0.70 See Table 3-12 on page 3-18 See Table 3-13 on page 3-20 µW/MHz µW/MHz 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 25 30 2.6 358 12.88 µW/MHz µW/MHz µW/MHz µW/MHz mW PAC17 VCC 1.5 V 4.8 µW/MHz PAC18 PAC19 PAC20 VCC33A VCC33A VCC 3.3 V 3.3 V 1.5 V 0.63 3.3 3 mW mW mW 3- 22 R e visio n 2 Fusion Family of Mixed Signal FPGAs Static Power Consumption of Various Internal Resources Table 3-15 • Different Components Contributing to the Static Power Consumption in Fusion Devices Parameter PDC1 PDC2 PDC3 PDC4 PDC5 PDC6 PDC7 PDC8 PDC9 Definition Core static power contribution in operating mode Power Supply VCC 1.5 V 3.3 V 3.3 V 1.5 V 3.3 V 3.3 V Device-Specific Static Contributions AFS1500 AFS600 AFS250 AFS090 Units 18 7.5 0.66 0.03 1.19 8.25 3.3 See Table 3-12 on page 3-18 See Table 3-13 on page 3-20 1.5 V 2.55 mW 4.50 3.00 mW mW mW mW mW mW Device static power contribution in VCC33A standby mode Device static power contribution in VCC33A sleep mode NVM static power contribution Analog Block static contribution of ADC Analog Block static contribution per Quad VCC power VCC33A power VCC33A VCCI VCCI VCC Static contribution per input pin – standard dependent contribution Static contribution per input pin – standard dependent contribution Static contribution for PLL Power Calculation Methodology This section describes a simplified method to estimate power consumption of an application. For more accurate and detailed power estimations, use the SmartPower tool in the Libero IDE software. The power calculation methodology described below uses the following variables: • • • • • • • • • • • The number of PLLs as well as the number and the frequency of each output clock generated The number of combinatorial and sequential cells used in the design The internal clock frequencies The number and the standard of I/O pins used in the design The number of RAM blocks used in the design The number of NVM blocks used in the design The number of Analog Quads used in the design Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 3-16 on page 3-27. Enable rates of output buffers—guidelines are provided for typical applications in Table 3-17 on page 3-27. Read rate and write rate to the RAM—guidelines are provided for typical applications in Table 3-17 on page 3-27. Read rate to the NVM blocks The calculation should be repeated for each clock domain defined in the design. Revision 2 3- 23 DC and Power Characteristics Methodology Total Power Consumption—PTOTAL Operating Mode, Standby Mode, and Sleep Mode PTOTAL = PSTAT + PDYN PSTAT is the total static power consumption. PDYN is the total dynamic power consumption. Total Static Power Consumption—PSTAT Operating Mode PSTAT = PDC1 + (NNVM-BLOCKS * PDC4) + PDC5+ (NQUADS * PDC6) + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) + (NPLLS * PDC9) NNVM-BLOCKS is the number of NVM blocks available in the device. NQUADS is the number of Analog Quads used in the design. NINPUTS is the number of I/O input buffers used in the design. NOUTPUTS is the number of I/O output buffers used in the design. NPLLS is the number of PLLs available in the device. Standby Mode PSTAT = PDC2 Sleep Mode PSTAT = PDC3 Total Dynamic Power Consumption—PDYN Operating Mode PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PNVM+ PXTL-OSC + PRC-OSC + PAB Standby Mode PDYN = PXTL-OSC Sleep Mode PDYN = 0 W Global Clock Dynamic Contribution—PCLOCK Operating Mode PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK NSPINE is the number of global spines used in the user design—guidelines are provided in the "Spine Architecture" section of the Global Resources chapter in the Fusion FPGA Fabric User's Guide. NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Spine Architecture" section of the Global Resources chapter in the Fusion FPGA Fabric User's Guide. FCLK is the global clock signal frequency. NS-CELL is the number of VersaTiles used as sequential modules in the design. Standby Mode and Sleep Mode PCLOCK = 0 W Sequential Cells Dynamic Contribution—PS-CELL Operating Mode 3- 24 R e visio n 2 Fusion Family of Mixed Signal FPGAs PS-CELL = NS-CELL * (PAC5 + (α1 / 2) * PAC6) * FCLK NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile sequential cell is used, it should be accounted for as 1. α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27. FCLK is the global clock signal frequency. Standby Mode and Sleep Mode PS-CELL = 0 W Combinatorial Cells Dynamic Contribution—PC-CELL Operating Mode PC-CELL = NC-CELL* (α1 / 2) * PAC7 * FCLK NC-CELL is the number of VersaTiles used as combinatorial modules in the design. α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27. FCLK is the global clock signal frequency. Standby Mode and Sleep Mode PC-CELL = 0 W Routing Net Dynamic Contribution—PNET Operating Mode PNET = (NS-CELL + NC-CELL) * (α1 / 2) * PAC8 * FCLK NS-CELL is the number VersaTiles used as sequential modules in the design. NC-CELL is the number of VersaTiles used as combinatorial modules in the design. α1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 3-16 on page 3-27. FCLK is the global clock signal frequency. Standby Mode and Sleep Mode PNET = 0 W I/O Input Buffer Dynamic Contribution—PINPUTS Operating Mode PINPUTS = NINPUTS * (α2 / 2) * PAC9 * FCLK NINPUTS is the number of I/O input buffers used in the design. FCLK is the global clock signal frequency. Standby Mode and Sleep Mode PINPUTS = 0 W α2 is the I/O buffer toggle rate—guidelines are provided in Table 3-16 on page 3-27. I/O Output Buffer Dynamic Contribution—POUTPUTS Operating Mode POUTPUTS = NOUTPUTS * (α2 / 2) * β1 * PAC10 * FCLK NOUTPUTS is the number of I/O output buffers used in the design. α2 is the I/O buffer toggle rate—guidelines are provided in Table 3-16 on page 3-27. β1 is the I/O buffer enable rate—guidelines are provided in Table 3-17 on page 3-27. FCLK is the global clock signal frequency. Standby Mode and Sleep Mode POUTPUTS = 0 W Revision 2 3- 25 DC and Power Characteristics RAM Dynamic Contribution—PMEMORY Operating Mode PMEMORY = (NBLOCKS * PAC11 * β2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * β3 * FWRITE-CLOCK) NBLOCKS is the number of RAM blocks used in the design. FREAD-CLOCK is the memory read clock frequency. β2 is the RAM enable rate for read operations—guidelines are provided in Table 3-17 on page 3-27. β3 the RAM enable rate for write operations—guidelines are provided in Table 3-17 on page 3-27. FWRITE-CLOCK is the memory write clock frequency. Standby Mode and Sleep Mode PMEMORY = 0 W PLL/CCC Dynamic Contribution—PPLL Operating Mode PPLL = PAC13 * FCLKOUT FCLKIN is the input clock frequency. FCLKOUT is the output clock frequency.1 Standby Mode and Sleep Mode PPLL = 0 W Nonvolatile Memory Dynamic Contribution—PNVM Operating Mode The NVM dynamic power consumption is a piecewise linear function of frequency. PNVM = NNVM-BLOCKS * β4 *(PAC16 + PAC17 * FREAD-NVM when FREAD-NVM > 33 MHz NNVM-BLOCKS is the number of NVM blocks used in the design (2 inAFS600). FREAD-NVM is the NVM read clock frequency. Standby Mode and Sleep Mode PNVM = 0 W PNVM = NNVM-BLOCKS * β4 * PAC15 * FREAD-NVM when FREAD-NVM ≤ 33 MHz, β4 is the NVM enable rate for read operations. Default is 0 (NVM mainly in idle state). Crystal Oscillator Dynamic Contribution—PXTL-OSC Operating Mode PXTL-OSC = PAC18 Standby Mode PXTL-OSC = PAC18 Sleep Mode PXTL-OSC = 0 W 1. The PLL dynamic contribution depends on the input clock frequency, the number of output clock signals generated by the PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output clock in the formula output clock by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL contribution. 3- 26 R e visio n 2 Fusion Family of Mixed Signal FPGAs RC Oscillator Dynamic Contribution—PRC-OSC Operating Mode PRC-OSC = PAC19 Standby Mode and Sleep Mode PRC-OSC = 0 W Analog System Dynamic Contribution—PAB Operating Mode PAB = PAC20 Standby Mode and Sleep Mode PAB = 0 W Guidelines Toggle Rate Definition A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some examples: • • The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock frequency. The average toggle rate of an 8-bit counter is 25%: – – – – – – Bit 0 (LSB) = 100% Bit 1 = 50% Bit 2 = 25% … Bit 7 (MSB) = 0.78125% Average toggle rate = (100% + 50% + 25% + 12.5% + . . . 0.78125%) / 8. Enable Rate Definition Output enable rate is the average percentage of time during which tristate outputs are enabled. When non-tristate output buffers are used, the enable rate should be 100%. Table 3-16 • Toggle Rate Guidelines Recommended for Power Calculation Component Definition Toggle rate of VersaTile outputs I/O buffer toggle rate Guideline 10% 10% α1 α2 Component Table 3-17 • Enable Rate Guidelines Recommended for Power Calculation Definition I/O output buffer enable rate RAM enable rate for read operations RAM enable rate for write operations NVM enable rate for read operations Guideline 100% 12.5% 12.5% 0% β1 β2 β3 β4 Revision 2 3- 27 DC and Power Characteristics Example of Power Calculation This example considers a shift register with 5,000 storage tiles, including a counter and memory that stores analog information. The shift register is clocked at 50 MHz and stores and reads information from a RAM. The device used is a commercial AFS600 device operating in typical conditions. The calculation below uses the power calculation methodology previously presented and shows how to determine the dynamic and static power consumption of resources used in the application. Also included in the example is the calculation of power consumption in operating, standby, and sleep modes to illustrate the benefit of power-saving modes. Global Clock Contribution—PCLOCK FCLK = 50 MHz Number of sequential VersaTiles: NS-CELL = 5,000 Estimated number of Spines: NSPINES = 5 Estimated number of Rows: NROW = 313 Operating Mode PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK PCLOCK = (0.0128 + 5 * 0.0019 + 313 * 0.00081 + 5,000 * 0.00011) * 50 PCLOCK = 41.28 mW Standby Mode and Sleep Mode PCLOCK = 0 W Logic—Sequential Cells, Combinational Cells, and Routing Net Contributions—PS-CELL, PC-CELL, and PNET FCLK = 50 MHz Number of sequential VersaTiles: NS-CELL = 5,000 Number of combinatorial VersaTiles: NC-CELL = 6,000 Estimated toggle rate of VersaTile outputs: α1 = 0.1 (10%) Operating Mode PS-CELL = NS-CELL * (PAC5+ (α1 / 2) * PAC6) * FCLK PS-CELL = 5,000 * (0.00007 + (0.1 / 2) * 0.00029) * 50 PS-CELL = 21.13 mW PC-CELL = NC-CELL* (α1 / 2) * PAC7 * FCLK PC-CELL = 6,000 * (0.1 / 2) * 0.00029 * 50 PC-CELL = 4.35 mW PNET = (NS-CELL + NC-CELL) * (α1 / 2) * PAC8 * FCLK PNET = (5,000 + 6,000) * (0.1 / 2) * 0.0007 * 50 PNET = 19.25 mW PLOGIC = PS-CELL + PC-CELL + PNET PLOGIC = 21.13 mW + 4.35 mW + 19.25 mW PLOGIC = 44.73 mW Standby Mode and Sleep Mode 3- 28 R e visio n 2 Fusion Family of Mixed Signal FPGAs PS-CELL = 0 W PC-CELL = 0 W PNET = 0 W PLOGIC = 0 W I/O Input and Output Buffer Contribution—PI/O This example uses LVTTL 3.3 V I/O cells. The output buffers are 12 mA–capable, configured with high output slew and driving a 35 pF output load. FCLK = 50 MHz Number of input pins used: NINPUTS = 30 Number of output pins used: NOUTPUTS = 40 Estimated I/O buffer toggle rate: α2 = 0.1 (10%) Estimated IO buffer enable rate: β1 = 1 (100%) Operating Mode PINPUTS = NINPUTS * (α2 / 2) * PAC9 * FCLK PINPUTS = 30 * (0.1 / 2) * 0.01739 * 50 PINPUTS = 1.30 mW POUTPUTS = NOUTPUTS * (α2 / 2) * β1 * PAC10 * FCLK POUTPUTS = 40 * (0.1 / 2) * 1 * 0.4747 * 50 POUTPUTS = 47.47 mW PI/O = PINPUTS + POUTPUTS PI/O = 1.30 mW + 47.47 mW PI/O = 48.77 mW Standby Mode and Sleep Mode PINPUTS = 0 W POUTPUTS = 0 W PI/O = 0 W RAM Contribution—PMEMORY Frequency of Read Clock: FREAD-CLOCK = 10 MHz Frequency of Write Clock: FWRITE-CLOCK = 10 MHz Number of RAM blocks: NBLOCKS = 20 Estimated RAM Read Enable Rate: β2 = 0.125 (12.5%) Estimated RAM Write Enable Rate: β3 = 0.125 (12.5%) Operating Mode PMEMORY = (NBLOCKS * PAC11 * β2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * β3 * FWRITE-CLOCK) PMEMORY = (20 * 0.025 * 0.125 * 10) + (20 * 0.030 * 0.125 * 10) PMEMORY = 1.38 mW Standby Mode and Sleep Mode PMEMORY = 0 W Revision 2 3- 29 DC and Power Characteristics PLL/CCC Contribution—PPLL PLL is not used in this application. PPLL = 0 W Nonvolatile Memory—PNVM Nonvolatile memory is not used in this application. PNVM = 0 W Crystal Oscillator—PXTL-OSC The application utilizes standby mode. The crystal oscillator is assumed to be active. Operating Mode PXTL-OSC = PAC18 PXTL-OSC = 0.63 mW Standby Mode PXTL-OSC = PAC18 PXTL-OSC = 0.63 mW Sleep Mode PXTL-OSC = 0 W RC Oscillator—PRC-OSC Operating Mode PRC-OSC = PAC19 PRC-OSC = 3.30 mW Standby Mode and Sleep Mode PRC-OSC = 0 W Analog System—PAB Number of Quads used: NQUADS = 4 Operating Mode PAB = PAC20 PAB = 3.00 mW Standby Mode and Sleep Mode PAB = 0 W Total Dynamic Power Consumption—PDYN Operating Mode PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PNVM+ PXTL-OSC + PRC-OSC + PAB PDYN = 41.28 mW + 21.1 mW + 4.35 mW + 19.25 mW + 1.30 mW + 47.47 mW + 1.38 mW + 0 + 0 + 0.63 mW + 3.30 mW + 3.00 mW PDYN = 143.06 mW Standby Mode PDYN = PXTL-OSC PDYN = 0.63 mW Sleep Mode PDYN = 0 W 3- 30 R e visio n 2 Fusion Family of Mixed Signal FPGAs Total Static Power Consumption—PSTAT Number of Quads used: NQUADS = 4 Number of NVM blocks available (AFS600): NNVM-BLOCKS = 2 Number of input pins used: NINPUTS = 30 Number of output pins used: NOUTPUTS = 40 Operating Mode PSTAT = PDC1 + (NNVM-BLOCKS * PDC4) + PDC5 + (NQUADS * PDC6) + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) PSTAT = 7.50 mW + (2 * 1.19 mW) + 8.25 mW + (4 * 3.30 mW) + (30 * 0.00) + (40 * 0.00) PSTAT = 31.33 mW Standby Mode PSTAT = PDC2 PSTAT = 0.03 mW Sleep Mode PSTAT = PDC3 PSTAT = 0.03 mW Total Power Consumption—PTOTAL In operating mode, the total power consumption of the device is 174.39 mW: PTOTAL = PSTAT + PDYN PTOTAL = 143.06 mW + 31.33 mW PTOTAL = 174.39 mW In standby mode, the total power consumption of the device is limited to 0.66 mW: PTOTAL = PSTAT + PDYN PTOTAL = 0.03 mW + 0.63 mW PTOTAL = 0.66 mW In sleep mode, the total power consumption of the device drops as low as 0.03 mW: PTOTAL = PSTAT + PDYN PTOTAL = 0.03 mW Revision 2 3- 31 DC and Power Characteristics Power Consumption Table 3-18 • Power Consumption Parameter Crystal Oscillator ISTBXTAL IDYNXTAL Standby Current of Crystal Oscillator Operating Current RC 0.032–0.2 0.2–2.0 2.0–20.0 RC Oscillator IDYNRC ACM Operating clock) Operating clock) NVM System NVM Array Operating Power Idle Read operation Erase Write PNVMCTRL NVM Controller Power Operating 795 See Table 3-15 on page 3-23. 900 900 20 µA See Table 3-15 on page 3-23. µA µA µW/MHz Current Current (fixed (user 200 30 µA/MHz µA Operating Current 1 mA 10 0.6 0.19 0.6 0.6 µA mA mA mA mA Description Condition Min. Typical Max. Units 3- 32 R e visio n 2 4 – Package Pin Assignments QN108 A44 B41 A56 B52 Pin A1 Mark A43 B40 B1 A1 B27 A29 B13 A14 B26 A28 Note: The die attach paddle center of the package is tied to ground (GND). B14 A15 Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4 -1 Package Pin Assignments QN108 Pin Number A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 AFS090 Function NC GNDQ GAA2/IO52PDB3V0 GND GFA1/IO47PDB3V0 GEB1/IO45PDB3V0 VCCOSC XTAL2 GEA1/IO44PPB3V0 GEA0/IO44NPB3V0 GEB2/IO42PDB3V0 VCCNVM VCC15A PCAP NC GNDA AV0 AG0 ATRTN0 AT1 AC1 AV2 AG2 AT2 AT3 AC3 GNDAQ ADCGNDREF NC GNDA PTEM GNDNVM VPUMP TCK TMS TRST GDB1/IO39PSB1V0 GDC1/IO38PDB1V0 Pin Number A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 QN108 AFS090 Function GND GCB1/IO35PDB1V0 GCB2/IO33PDB1V0 GBA2/IO31PDB1V0 NC GBA1/IO30RSB0V0 GBB1/IO28RSB0V0 GND VCC GBC1/IO26RSB0V0 IO21RSB0V0 IO19RSB0V0 IO09RSB0V0 GAC0/IO04RSB0V0 VCCIB0 GND GAB0/IO02RSB0V0 GAA0/IO00RSB0V0 VCOMPLA VCCIB3 GAB2/IO52NDB3V0 VCCIB3 GFA0/IO47NDB3V0 GEB0/IO45NDB3V0 XTAL1 GNDOSC GEC2/IO43PSB3V0 GEA2/IO42NDB3V0 VCC GNDNVM NCAP VCC33PMP VCC33N GNDAQ AC0 AT0 AG1 AV1 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 B47 B48 B49 B50 B51 B52 Pin Number B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 QN108 AFS090 Function AC2 ATRTN1 AG3 AV3 VCC33A VAREF PUB VCC33A PTBASE VCCNVM VCC TDI TDO VJTAG GDC0/IO38NDB1V 0 VCCIB1 GCB0/IO35NDB1V0 GCC2/IO33NDB1V 0 GBB2/IO31NDB1V0 VCCIB1 GNDQ GBA0/IO29RSB0V0 VCCIB0 GBB0/IO27RSB0V0 GBC0/IO25RSB0V0 IO20RSB0V0 IO10RSB0V0 GAC1/IO05RSB0V0 GAB1/IO03RSB0V0 VCC GAA1/IO01RSB0V0 VCCPLA 4-2 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs QN180 A49 B46 C43 D4 A48 A64 B60 C56 Pin A1 Mark D1 A1 B45 C42 C1 B1 A33 C29 B31 C14 B15 A16 D3 Optional Corner Pad (4X) D2 C28 B30 A32 C15 B16 A17 Note: The die attach paddle center of the package is tied to ground (GND). Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4 -3 Package Pin Assignments QN180 Pin Number A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 AFS090 Function GNDQ VCCIB3 GAB2/IO52NDB3V0 GFA2/IO51NDB3V0 GFC2/IO50NDB3V0 VCCIB3 AFS250 Function GNDQ VCCIB3 IO74NDB3V0 IO71NDB3V0 IO69NPB3V0 VCCIB3 Pin Number A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 B1 B2 B3 B4 B5 B6 B7 B8 QN180 AFS090 Function VPUMP TDI TDO VJTAG AFS250 Function VPUMP TDI TDO VJTAG GDB1/IO39PPB1V0 GDA1/IO54PPB1V0 GDC1/IO38PDB1V0 GDB1/IO53PDB1V0 VCC VCC GFA1/IO47PPB3V0 GFB1/IO67PPB3V0 GEB0/IO45NDB3V0 XTAL1 GNDOSC NC XTAL1 GNDOSC GCB0/IO35NPB1V0 GCB0/IO48NPB1V0 GCC1/IO34PDB1V0 GCC1/IO47PDB1V0 VCCIB1 VCCIB1 GEC2/IO43PPB3V0 GEA1/IO61PPB3V0 IO43NPB3V0 NC GNDNVM PCAP VCC33PMP NC AV0 AG0 ATRTN0 AG1 AC1 AV2 AT2 AT3 AC3 AV4 AC4 AT4 NC NC ADCGNDREF VCC33A GNDA PTBASE VCCNVM GEA0/IO61NPB3V0 VCCIB3 GNDNVM PCAP VCC33PMP NC AV0 AG0 ATRTN0 AG1 AC1 AV2 AT2 AT3 AC3 AV4 AC4 AT4 AG5 AV5 ADCGNDREF VCC33A GNDA PTBASE VCCNVM GBC2/IO32PPB1V0 GBB2/IO41PPB1V0 VCCIB1 NC VCCIB1 NC GBA0/IO29RSB0V0 GBB1/IO37RSB0V0 VCCIB0 VCCIB0 GBB0/IO27RSB0V0 GBC0/IO34RSB0V0 GBC1/IO26RSB0V0 IO24RSB0V0 IO21RSB0V0 VCCIB0 IO15RSB0V0 IO10RSB0V0 IO07RSB0V0 GAC0/IO04RSB0V0 IO33RSB0V0 IO29RSB0V0 IO26RSB0V0 VCCIB0 IO21RSB0V0 IO13RSB0V0 IO10RSB0V0 IO06RSB0V0 GAB1/IO03RSB0V0 GAC1/IO05RSB0V0 VCC VCC GAA1/IO01RSB0V0 GAB0/IO02RSB0V0 NC VCOMPLA NC VCOMPLA GAA2/IO52PDB3V0 GAC2/IO74PDB3V0 GAC2/IO51PDB3V0 GFA2/IO71PDB3V0 GFB2/IO50PDB3V0 GFB2/IO70PSB3V0 VCC VCC GFC0/IO49NDB3V0 GFC0/IO68NDB3V0 GEB1/IO45PDB3V0 VCCOSC NC VCCOSC 4-4 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs QN180 Pin Number B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 AFS090 Function XTAL2 AFS250 Function XTAL2 Pin Number B45 B46 B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 QN180 AFS090 Function AFS250 Function GBA2/IO31PDB1V0 GBA2/IO40PDB1V0 GNDQ GNDQ GEA0/IO44NDB3V0 GFA0/IO66NDB3V0 GEB2/IO42PDB3V0 VCC VCCNVM VCC15A NCAP VCC33N GNDAQ AC0 AT0 AT1 AV1 AC2 ATRTN1 AG3 AV3 AG4 ATRTN2 NC VCC33A VAREF PUB PTEM GNDNVM VCC TCK TMS TRST IO60NDB3V0 VCC VCCNVM VCC15A NCAP VCC33N GNDAQ AC0 AT0 AT1 AV1 AC2 ATRTN1 AG3 AV3 AG4 ATRTN2 AC5 VCC33A VAREF PUB PTEM GNDNVM VCC TCK TMS TRST GBA1/IO30RSB0V0 GBA0/IO38RSB0V0 GBB1/IO28RSB0V0 GBC1/IO35RSB0V0 VCC GBC0/IO25RSB0V0 IO23RSB0V0 IO20RSB0V0 VCC IO11RSB0V0 IO08RSB0V0 GAC1/IO05RSB0V0 VCCIB0 VCC IO31RSB0V0 IO28RSB0V0 IO25RSB0V0 VCC IO14RSB0V0 IO11RSB0V0 IO08RSB0V0 VCCIB0 GAB0/IO02RSB0V0 GAC0/IO04RSB0V0 GAA0/IO00RSB0V0 GAA1/IO01RSB0V0 VCCPLA NC NC GND NC VCCPLA NC VCCIB3 GND GFC2/IO69PPB3V0 GFC1/IO49PDB3V0 GFC1/IO68PDB3V0 GFA0/IO47NPB3V0 GFB0/IO67NPB3V0 VCCIB3 GND NC GND GEA1/IO44PDB3V0 GFA1/IO66PDB3V0 GEA2/IO42NDB3V0 GEC2/IO60PDB3V0 NC NC GND NC NC GNDA NC NC NC NC GEA2/IO58PSB3V0 NC GND NC NC GNDA NC NC NC NC GDB2/IO41PSB1V0 GDA2/IO55PSB1V0 GDC0/IO38NDB1V0 GDB0/IO53NDB1V0 VCCIB1 VCCIB1 GCA1/IO36PDB1V0 GCA1/IO49PDB1V0 GCC0/IO34NDB1V0 GCC0/IO47NDB1V0 GCB2/IO33PSB1V0 GBC2/IO42PSB1V0 VCC VCC Revision 2 4 -5 Package Pin Assignments QN180 Pin Number C21 C22 C23 C24 C25 C26 C27 C28 C29 C30 C31 C32 C33 C34 C35 C36 C37 C38 C39 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 C50 C51 C52 C53 C54 C55 C56 AFS090 Function AG2 NC NC NC NC GNDAQ NC NC NC NC GND NC NC NC GND AFS250 Function AG2 NC NC NC AT5 GNDAQ NC NC NC NC GND NC NC NC GND Pin Number D1 D2 D3 D4 QN180 AFS090 Function NC NC NC NC AFS250 Function NC NC NC NC GDB0/IO39NPB1V0 GDA0/IO54NPB1V0 GDA1/IO37NSB1V0 GDC0/IO52NSB1V0 GCA0/IO36NDB1V0 GCA0/IO49NDB1V0 GCB1/IO35PPB1V0 GCB1/IO48PPB1V0 GND GCA2/IO32NPB1V0 GBB2/IO31NDB1V0 NC NC NC GND NC IO22RSB0V0 GND IO13RSB0V0 IO09RSB0V0 IO06RSB0V0 GND NC NC NC GND IO41NPB1V0 IO40NDB1V0 NC GBA1/IO39RSB0V0 GBB0/IO36RSB0V0 GND IO30RSB0V0 IO27RSB0V0 GND IO16RSB0V0 IO12RSB0V0 IO09RSB0V0 GND GAB1/IO03RSB0V0 GAA0/IO00RSB0V0 NC 4-6 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs PQ208 1 208 208-Pin PQFP Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4 -7 Package Pin Assignments PQ208 Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 AFS250 Function VCCPLA VCOMPLA GNDQ VCCIB3 IO76NDB3V0 IO75NDB3V0 NC NC VCC GND VCCIB3 IO72PDB3V0 IO72NDB3V0 IO71NDB3V0 IO70NDB3V0 GFC2/IO69PDB3V0 IO69NDB3V0 VCC GND VCCIB3 AFS600 Function VCCPLA VCOMPLA GAA2/IO85PDB4V0 IO85NDB4V0 IO84NDB4V0 IO83NDB4V0 IO77PDB4V0 IO77NDB4V0 IO76PDB4V0 IO76NDB4V0 VCC GND VCCIB4 IO75NDB4V0 IO73NDB4V0 VCCOSC XTAL1 XTAL2 GNDOSC GFC1/IO72PDB4V0 Pin Number 38 39 40 41 42 43 44 45 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 PQ208 AFS250 Function IO60NDB3V0 GND VCCIB3 IO59NDB3V0 GEA2/IO58PDB3V0 IO58NDB3V0 VCC VCC VCCNVM GNDNVM GND VCC15A PCAP NCAP VCC33PMP VCC33N GNDA GNDAQ NC NC NC NC NC NC NC NC NC AV0 AC0 AG0 AT0 ATRTN0 AT1 AG1 AC1 AV1 AFS600 Function GEB0/IO62NDB4V0 GEA1/IO61PDB4V0 GEA0/IO61NDB4V0 IO60NDB4V0 VCCIB4 GNDQ VCC VCC VCCNVM GNDNVM GND VCC15A PCAP NCAP VCC33PMP VCC33N GNDA GNDAQ AV0 AC0 AG0 AT0 ATRTN0 AT1 AG1 AC1 AV1 AV2 AC2 AG2 AT2 ATRTN1 AT3 AG3 AC3 AV3 GEB2/IO59PDB3V0 GEC2/IO60PDB4V0 GAA2/IO76PDB3V0 GAB2/IO84PDB4V0 GAB2/IO75PDB3V0 GAC2/IO83PDB4V0 GFA2/IO71PDB3V0 GFA2/IO75PDB4V0 GFB2/IO70PDB3V0 GFC2/IO73PDB4V0 GFC1/IO68PDB3V0 GFC0/IO72NDB4V0 GFC0/IO68NDB3V0 GFB1/IO71PDB4V0 GFB1/IO67PDB3V0 GFB0/IO71NDB4V0 GFB0/IO67NDB3V0 GFA1/IO70PDB4V0 VCCOSC XTAL1 XTAL2 GNDOSC GEB1/IO62PDB3V0 GEB0/IO62NDB3V0 GFA0/IO70NDB4V0 IO69PDB4V0 IO69NDB4V0 VCC GND VCCIB4 GEA1/IO61PDB3V0 GEC1/IO63PDB4V0 GEA0/IO61NDB3V0 GEC0/IO63NDB4V0 GEC2/IO60PDB3V0 GEB1/IO62PDB4V0 4-8 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs PQ208 Pin Number 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 AFS250 Function AV2 AC2 AG2 AT2 ATRTN1 AT3 AG3 AC3 AV3 AV4 AC4 AG4 AT4 ATRTN2 AT5 AG5 AC5 AV5 NC NC NC NC NC NC NC NC NC GNDAQ VCC33A ADCGNDREF VAREF PUB VCC33A GNDA PTEM PTBASE GNDNVM AFS600 Function AV4 AC4 AG4 AT4 ATRTN2 AT5 AG5 AC5 AV5 AV6 AC6 AG6 AT6 ATRTN3 AT7 AG7 AC7 AV7 AV8 AC8 AG8 AT8 ATRTN4 AT9 AG9 AC9 AV9 GNDAQ VCC33A ADCGNDREF VAREF PUB VCC33A GNDA PTEM PTBASE GNDNVM 137 138 139 140 141 142 143 144 145 146 Pin Number 111 112 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 PQ208 AFS250 Function VCCNVM VCC VCC VPUMP GNDQ VCCIB1 TCK TDI TMS TDO TRST VJTAG IO57NDB1V0 GDC2/IO57PDB1V0 IO56NDB1V0 GDB2/IO56PDB1V0 VCCIB1 GND IO55NDB1V0 GDA2/IO55PDB1V0 GDA0/IO54NDB1V0 GDA1/IO54PDB1V0 AFS600 Function VCCNVM VCC VCC VPUMP NC TCK TDI TMS TDO TRST VJTAG IO57NDB2V0 GDC2/IO57PDB2V0 IO56NDB2V0 GDB2/IO56PDB2V0 IO55NDB2V0 GDA2/IO55PDB2V0 GDA0/IO54NDB2V0 GDA1/IO54PDB2V0 VCCIB2 GND VCC GDB0/IO53NDB1V0 GCA0/IO45NDB2V0 GDB1/IO53PDB1V0 GCA1/IO45PDB2V0 GDC0/IO52NDB1V0 GCB0/IO44NDB2V0 GDC1/IO52PDB1V0 GCB1/IO44PDB2V0 IO51NSB1V0 VCCIB1 GND VCC IO50NDB1V0 IO50PDB1V0 GCA0/IO49NDB1V0 GCA1/IO49PDB1V0 GCB0/IO48NDB1V0 GCB1/IO48PDB1V0 GCC0/IO43NDB2V 0 GCC1/IO43PDB2V0 IO42NDB2V0 IO42PDB2V0 IO41NDB2V0 GCC2/IO41PDB2V0 VCCIB2 GND VCC IO40NDB2V0 GCC0/IO47NDB1V0 GCB2/IO40PDB2V0 Revision 2 4 -9 Package Pin Assignments PQ208 Pin Number 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 AFS250 Function GCC1/IO47PDB1V0 IO42NDB1V0 GBC2/IO42PDB1V0 VCCIB1 GND VCC IO41NDB1V0 GBB2/IO41PDB1V0 IO40NDB1V0 GBA2/IO40PDB1V0 GBA1/IO39RSB0V0 GBA0/IO38RSB0V0 AFS600 Function IO39NDB2V0 GCA2/IO39PDB2V0 IO31NDB2V0 GBB2/IO31PDB2V0 IO30NDB2V0 GBA2/IO30PDB2V0 VCCIB2 GNDQ VCOMPLB VCCPLB VCCIB1 GNDQ Pin Number 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 208 PQ208 AFS250 Function IO18RSB0V0 IO17RSB0V0 IO16RSB0V0 IO15RSB0V0 VCCIB0 GND VCC IO14RSB0V0 IO13RSB0V0 IO12RSB0V0 IO11RSB0V0 IO10RSB0V0 IO09RSB0V0 IO08RSB0V0 IO07RSB0V0 IO06RSB0V0 GAC1/IO05RSB0V0 VCCIB0 GND VCC AFS600 Function IO10PPB0V1 IO09PPB0V1 IO10NPB0V1 IO09NPB0V1 IO08PPB0V1 IO07PPB0V1 IO08NPB0V1 IO07NPB0V1 IO06PPB0V0 IO05PPB0V0 IO06NPB0V0 IO04PPB0V0 IO05NPB0V0 IO04NPB0V0 GAC1/IO03PDB0V0 GAC0/IO03NDB0V0 VCCIB0 GND VCC GAB1/IO02PDB0V0 GBB1/IO37RSB0V0 GBB1/IO27PPB1V1 GBB0/IO36RSB0V0 GBA1/IO28PPB1V1 GBC1/IO35RSB0V0 GBB0/IO27NPB1V1 VCCIB0 GND VCC GBC0/IO34RSB0V0 IO33RSB0V0 IO32RSB0V0 IO31RSB0V0 IO30RSB0V0 IO29RSB0V0 IO28RSB0V0 IO27RSB0V0 IO26RSB0V0 IO25RSB0V0 VCCIB0 GND VCC IO24RSB0V0 IO23RSB0V0 IO22RSB0V0 IO21RSB0V0 IO20RSB0V0 IO19RSB0V0 GBA0/IO28NPB1V1 VCCIB1 GND VCC GBC1/IO26PDB1V1 GBC0/IO26NDB1V1 IO24PPB1V1 IO23PPB1V1 IO24NPB1V1 IO23NPB1V1 IO22PPB1V0 IO21PPB1V0 IO22NPB1V0 IO21NPB1V0 IO20PSB1V0 IO19PSB1V0 IO14NSB0V1 IO12PDB0V1 IO12NDB0V1 VCCIB0 GND VCC GAC0/IO04RSB0V0 GAB0/IO02NDB0V0 GAB1/IO03RSB0V0 GAA1/IO01PDB0V0 GAB0/IO02RSB0V0 GAA0/IO01NDB0V0 GAA1/IO01RSB0V0 GAA0/IO00RSB0V0 GNDQ VCCIB0 4- 10 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG256 A1 Ball Pad Corner 16 15 14 13 12 11 10 9 8 7 654 321 A B C D E F G H J K L M N P R T Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4- 11 Package Pin Assignments FG256 Pin Number A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 C1 C2 C3 C4 C5 C6 AFS090 Function GND VCCIB0 GAB0/IO02RSB0V0 GAB1/IO03RSB0V0 GND IO07RSB0V0 IO10RSB0V0 IO11RSB0V0 IO16RSB0V0 IO17RSB0V0 IO18RSB0V0 GND GBC0/IO25RSB0V0 GBA0/IO29RSB0V0 VCCIB0 GND VCOMPLA VCCPLA GAA0/IO00RSB0V0 GAA1/IO01RSB0V0 NC IO06RSB0V0 VCCIB0 IO12RSB0V0 IO13RSB0V0 VCCIB0 IO19RSB0V0 GBB0/IO27RSB0V0 GBC1/IO26RSB0V0 GBA1/IO30RSB0V0 NC NC VCCIB3 GND VCCIB3 NC VCCIB0 GAC1/IO05RSB0V0 AFS250 Function GND VCCIB0 GAA0/IO00RSB0V0 GAA1/IO01RSB0V0 GND IO11RSB0V0 IO14RSB0V0 IO15RSB0V0 IO24RSB0V0 IO25RSB0V0 IO26RSB0V0 GND GBA0/IO38RSB0V0 IO32RSB0V0 VCCIB0 GND VCOMPLA VCCPLA IO07RSB0V0 IO06RSB0V0 GAB1/IO03RSB0V0 IO10RSB0V0 VCCIB0 IO16RSB0V0 IO17RSB0V0 VCCIB0 IO27RSB0V0 GBC0/IO34RSB0V0 GBA1/IO39RSB0V0 IO33RSB0V0 NC NC VCCIB3 GND VCCIB3 NC VCCIB0 GAC1/IO05RSB0V0 AFS600 Function GND VCCIB0 GAA0/IO01NDB0V0 GAA1/IO01PDB0V0 GND IO10PDB0V1 IO12PDB0V1 IO12NDB0V1 IO22NDB1V0 IO22PDB1V0 IO24NDB1V1 GND GBA0/IO28NDB1V1 IO29NDB1V1 VCCIB1 GND VCOMPLA VCCPLA IO00NDB0V0 IO00PDB0V0 GAB1/IO02PPB0V0 IO10NDB0V1 VCCIB0 IO18NDB1V0 IO18PDB1V0 VCCIB1 IO24PDB1V1 GBC0/IO26NPB1V1 GBA1/IO28PDB1V1 IO29PDB1V1 VCCPLB VCOMPLB VCCIB4 GND VCCIB4 VCCIB0 VCCIB0 GAC1/IO03PDB0V0 AFS1500 Function GND VCCIB0 GAA0/IO01NDB0V0 GAA1/IO01PDB0V0 GND IO07PDB0V1 IO13PDB0V2 IO13NDB0V2 IO24NDB1V0 IO24PDB1V0 IO29NDB1V1 GND GBA0/IO42NDB1V2 IO43NDB1V2 VCCIB1 GND VCOMPLA VCCPLA IO00NDB0V0 IO00PDB0V0 GAB1/IO02PPB0V0 IO07NDB0V1 VCCIB0 IO22NDB1V0 IO22PDB1V0 VCCIB1 IO29PDB1V1 GBC0/IO40NPB1V2 GBA1/IO42PDB1V2 IO43PDB1V2 VCCPLB VCOMPLB VCCIB4 GND VCCIB4 VCCIB0 VCCIB0 GAC1/IO03PDB0V0 4- 12 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG256 Pin Number C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 E1 E2 E3 E4 E5 E6 E7 E8 E9 E10 E11 E12 AFS090 Function IO09RSB0V0 IO14RSB0V0 IO15RSB0V0 IO22RSB0V0 IO20RSB0V0 VCCIB0 GBB1/IO28RSB0V0 VCCIB1 GND VCCIB1 GFC2/IO50NPB3V0 GFA2/IO51NDB3V0 GAC2/IO51PDB3V0 GAA2/IO52PDB3V0 GAB2/IO52NDB3V0 GAC0/IO04RSB0V0 IO08RSB0V0 NC NC IO21RSB0V0 IO23RSB0V0 NC GBA2/IO31PDB1V0 GBB2/IO31NDB1V0 GBC2/IO32PDB1V0 GCA2/IO32NDB1V0 GND GFB0/IO48NPB3V0 GFB2/IO50PPB3V0 VCCIB3 NC NC GND NC NC GND IO24RSB0V0 NC AFS250 Function IO12RSB0V0 IO22RSB0V0 IO23RSB0V0 IO30RSB0V0 IO31RSB0V0 VCCIB0 GBC1/IO35RSB0V0 VCCIB1 GND VCCIB1 IO75NDB3V0 GAB2/IO75PDB3V0 IO76NDB3V0 GAA2/IO76PDB3V0 GAB0/IO02RSB0V0 GAC0/IO04RSB0V0 IO13RSB0V0 IO20RSB0V0 IO21RSB0V0 IO28RSB0V0 GBB0/IO36RSB0V0 NC GBA2/IO40PDB1V0 IO40NDB1V0 GBB2/IO41PDB1V0 IO41NDB1V0 GND IO73NDB3V0 IO73PDB3V0 VCCIB3 IO74NPB3V0 IO08RSB0V0 GND IO18RSB0V0 NC GND GBB1/IO37RSB0V0 IO50PPB1V0 AFS600 Function IO06NDB0V0 IO16PDB1V0 IO16NDB1V0 IO25NDB1V1 IO25PDB1V1 VCCIB1 GBC1/IO26PPB1V1 VCCIB2 GND VCCIB2 IO84NDB4V0 GAB2/IO84PDB4V0 IO85NDB4V0 GAA2/IO85PDB4V0 GAB0/IO02NPB0V0 GAC0/IO03NDB0V0 IO06PDB0V0 IO14NDB0V1 IO14PDB0V1 IO23PDB1V1 GBB0/IO27NDB1V1 VCCIB1 GBA2/IO30PDB2V0 IO30NDB2V0 GBB2/IO31PDB2V0 IO31NDB2V0 GND IO81NDB4V0 IO81PDB4V0 VCCIB4 IO83NPB4V0 IO04NPB0V0 GND IO08PDB0V1 IO20NDB1V0 GND GBB1/IO27PDB1V1 IO33PSB2V0 AFS1500 Function IO09NDB0V1 IO23PDB1V0 IO23NDB1V0 IO31NDB1V1 IO31PDB1V1 VCCIB1 GBC1/IO40PPB1V2 VCCIB2 GND VCCIB2 IO124NDB4V0 GAB2/IO124PDB4V0 IO125NDB4V0 GAA2/IO125PDB4V0 GAB0/IO02NPB0V0 GAC0/IO03NDB0V0 IO09PDB0V1 IO15NDB0V2 IO15PDB0V2 IO37PDB1V2 GBB0/IO41NDB1V2 VCCIB1 GBA2/IO44PDB2V0 IO44NDB2V0 GBB2/IO45PDB2V0 IO45NDB2V0 GND IO118NDB4V0 IO118PDB4V0 VCCIB4 IO123NPB4V0 IO05NPB0V1 GND IO11PDB0V1 IO27NDB1V1 GND GBB1/IO41PDB1V2 IO48PSB2V0 Revision 2 4- 13 Package Pin Assignments FG256 Pin Number E13 E14 E15 E16 F1 F2 F3 F4 F5 F6 F7 F8 F9 F10 F11 F12 F13 F14 F15 F16 G1 G2 G3 G4 G5 G6 G7 G8 G9 G10 G11 G12 G13 G14 G15 G16 H1 H2 AFS090 Function VCCIB1 GCC2/IO33NDB1V0 GCB2/IO33PDB1V0 GND NC NC GFB1/IO48PPB3V0 GFC0/IO49NDB3V0 NC GFC1/IO49PDB3V0 NC NC NC NC NC NC NC NC GCC1/IO34PDB1V0 GCC0/IO34NDB1V0 GEC0/IO46NPB3V0 VCCIB3 GEC1/IO46PPB3V0 GFA1/IO47PDB3V0 GND GFA0/IO47NDB3V0 GND VCC GND VCC GDA1/IO37NDB1V0 GND IO37PDB1V0 GCB0/IO35NPB1V0 VCCIB1 GCB1/IO35PPB1V0 GEB1/IO45PDB3V0 GEB0/IO45NDB3V0 AFS250 Function VCCIB1 IO42NDB1V0 GBC2/IO42PDB1V0 GND NC NC IO72NDB3V0 IO72PDB3V0 NC GAC2/IO74PPB3V0 IO09RSB0V0 IO19RSB0V0 NC IO29RSB0V0 IO43NDB1V0 IO43PDB1V0 IO44NDB1V0 GCA2/IO44PDB1V0 GCB2/IO45PDB1V0 IO45NDB1V0 IO70NPB3V0 VCCIB3 GFB2/IO70PPB3V0 GFA2/IO71PDB3V0 GND IO71NDB3V0 GND VCC GND VCC GCC0/IO47NDB1V0 GND GCC1/IO47PDB1V0 IO46NPB1V0 VCCIB1 GCC2/IO46PPB1V0 GFC2/IO69PDB3V0 IO69NDB3V0 AFS600 Function VCCIB2 IO32NDB2V0 GBC2/IO32PDB2V0 GND IO79NDB4V0 IO79PDB4V0 IO76NDB4V0 IO76PDB4V0 IO82PSB4V0 GAC2/IO83PPB4V0 IO04PPB0V0 IO08NDB0V1 IO20PDB1V0 IO23NDB1V1 IO36NDB2V0 IO36PDB2V0 IO39NDB2V0 GCA2/IO39PDB2V0 GCB2/IO40PDB2V0 IO40NDB2V0 IO74NPB4V0 VCCIB4 GFB2/IO74PPB4V0 GFA2/IO75PDB4V0 GND IO75NDB4V0 GND VCC GND VCC GCC0/IO43NDB2V0 GND GCC1/IO43PDB2V0 IO41NPB2V0 VCCIB2 GCC2/IO41PPB2V0 GFC2/IO73PDB4V0 IO73NDB4V0 AFS1500 Function VCCIB2 IO46NDB2V0 GBC2/IO46PDB2V0 GND IO111NDB4V0 IO111PDB4V0 IO112NDB4V0 IO112PDB4V0 IO120PSB4V0 GAC2/IO123PPB4V0 IO05PPB0V1 IO11NDB0V1 IO27PDB1V1 IO37NDB1V2 IO50NDB2V0 IO50PDB2V0 IO59NDB2V0 GCA2/IO59PDB2V0 GCB2/IO60PDB2V0 IO60NDB2V0 IO109NPB4V0 VCCIB4 GFB2/IO109PPB4V0 GFA2/IO110PDB4V0 GND IO110NDB4V0 GND VCC GND VCC GCC0/IO62NDB2V0 GND GCC1/IO62PDB2V0 IO61NPB2V0 VCCIB2 GCC2/IO61PPB2V0 GFC2/IO108PDB4V0 IO108NDB4V0 4- 14 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG256 Pin Number H3 H4 H5 H6 H7 H8 H9 H10 H11 H12 H13 H14 H15 H16 J1 J2 J3 J4 J5 J6 J7 J8 J9 J10 J11 J12 J13 J14 J15 J16 K1 K2 K3 K4 K5 K6 K7 K8 AFS090 Function XTAL2 XTAL1 GNDOSC VCCOSC VCC GND VCC GND GDC0/IO38NDB1V0 GDC1/IO38PDB1V0 GDB1/IO39PDB1V0 GDB0/IO39NDB1V0 GCA0/IO36NDB1V0 GCA1/IO36PDB1V0 GEA0/IO44NDB3V0 GEA1/IO44PDB3V0 IO43NDB3V0 GEC2/IO43PDB3V0 NC NC GND VCC GND VCC GDC2/IO41NPB1V0 NC NC GDA0/IO40PDB1V0 NC GDA2/IO40NDB1V0 NC VCCIB3 NC NC GND NC VCC GND AFS250 Function XTAL2 XTAL1 GNDOSC VCCOSC VCC GND VCC GND IO51NDB1V0 IO51PDB1V0 GCA1/IO49PDB1V0 GCA0/IO49NDB1V0 GCB0/IO48NDB1V0 GCB1/IO48PDB1V0 GFA0/IO66NDB3V0 GFA1/IO66PDB3V0 GFB0/IO67NDB3V0 GFB1/IO67PDB3V0 GFC0/IO68NDB3V0 GFC1/IO68PDB3V0 GND VCC GND VCC IO56NPB1V0 GDB0/IO53NPB1V0 GDA1/IO54PDB1V0 GDC1/IO52PPB1V0 IO50NPB1V0 GDC0/IO52NPB1V0 IO65NPB3V0 VCCIB3 IO65PPB3V0 IO64PDB3V0 GND IO64NDB3V0 VCC GND AFS600 Function XTAL2 XTAL1 GNDOSC VCCOSC VCC GND VCC GND IO47NDB2V0 IO47PDB2V0 GCA1/IO45PDB2V0 GCA0/IO45NDB2V0 GCB0/IO44NDB2V0 GCB1/IO44PDB2V0 GFA0/IO70NDB4V0 GFA1/IO70PDB4V0 GFB0/IO71NDB4V0 GFB1/IO71PDB4V0 GFC0/IO72NDB4V0 GFC1/IO72PDB4V0 GND VCC GND VCC IO56NPB2V0 GDB0/IO53NPB2V0 GDA1/IO54PDB2V0 GDC1/IO52PPB2V0 IO51NSB2V0 GDC0/IO52NPB2V0 IO67NPB4V0 VCCIB4 IO67PPB4V0 IO65PDB4V0 GND IO65NDB4V0 VCC GND AFS1500 Function XTAL2 XTAL1 GNDOSC VCCOSC VCC GND VCC GND IO69NDB2V0 IO69PDB2V0 GCA1/IO64PDB2V0 GCA0/IO64NDB2V0 GCB0/IO63NDB2V0 GCB1/IO63PDB2V0 GFA0/IO105NDB4V0 GFA1/IO105PDB4V0 GFB0/IO106NDB4V0 GFB1/IO106PDB4V0 GFC0/IO107NDB4V0 GFC1/IO107PDB4V0 GND VCC GND VCC IO83NPB2V0 GDB0/IO80NPB2V0 GDA1/IO81PDB2V0 GDC1/IO79PPB2V0 IO77NSB2V0 GDC0/IO79NPB2V0 IO92NPB4V0 VCCIB4 IO92PPB4V0 IO96PDB4V0 GND IO96NDB4V0 VCC GND Revision 2 4- 15 Package Pin Assignments FG256 Pin Number K9 K10 K11 K12 K13 K14 K15 K16 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 L15 L16 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 M12 M13 M14 AFS090 Function VCC GND NC GND NC NC VCCIB1 NC NC NC NC NC NC NC GNDA AC0 AV2 AC3 PTEM TDO VJTAG NC GDB2/IO41PPB1V0 NC GND NC NC VCCIB3 NC NC NC AG1 AC2 AC4 NC VPUMP VCCIB1 TMS AFS250 Function VCC GND GDC2/IO57PPB1V0 GND GDA0/IO54NDB1V0 GDA2/IO55PPB1V0 VCCIB1 GDB1/IO53PPB1V0 GEC1/IO63PDB3V0 GEC0/IO63NDB3V0 GEB1/IO62PDB3V0 GEB0/IO62NDB3V0 IO60NDB3V0 GEC2/IO60PDB3V0 GNDA AC0 AV2 AC3 PTEM TDO VJTAG IO57NPB1V0 GDB2/IO56PPB1V0 IO55NPB1V0 GND GEA1/IO61PDB3V0 GEA0/IO61NDB3V0 VCCIB3 IO58NPB3V0 NC NC AG1 AC2 AC4 AG5 VPUMP VCCIB1 TMS AFS600 Function VCC GND GDC2/IO57PPB2V0 GND GDA0/IO54NDB2V0 GDA2/IO55PPB2V0 VCCIB2 GDB1/IO53PPB2V0 GEC1/IO63PDB4V0 GEC0/IO63NDB4V0 GEB1/IO62PDB4V0 GEB0/IO62NDB4V0 IO60NDB4V0 GEC2/IO60PDB4V0 GNDA AC2 AV4 AC5 PTEM TDO VJTAG IO57NPB2V0 GDB2/IO56PPB2V0 IO55NPB2V0 GND GEA1/IO61PDB4V0 GEA0/IO61NDB4V0 VCCIB4 IO58NPB4V0 AV0 AC1 AG3 AC4 AC6 AG7 VPUMP VCCIB2 TMS AFS1500 Function VCC GND GDC2/IO84PPB2V0 GND GDA0/IO81NDB2V0 GDA2/IO82PPB2V0 VCCIB2 GDB1/IO80PPB2V0 GEC1/IO90PDB4V0 GEC0/IO90NDB4V0 GEB1/IO89PDB4V0 GEB0/IO89NDB4V0 IO87NDB4V0 GEC2/IO87PDB4V0 GNDA AC2 AV4 AC5 PTEM TDO VJTAG IO84NPB2V0 GDB2/IO83PPB2V0 IO82NPB2V0 GND GEA1/IO88PDB4V0 GEA0/IO88NDB4V0 VCCIB4 IO85NPB4V0 AV0 AC1 AG3 AC4 AC6 AG7 VPUMP VCCIB2 TMS 4- 16 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG256 Pin Number M15 M16 N1 N2 N3 N4 N5 N6 N7 N8 N9 N10 N11 N12 N13 N14 N15 N16 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 R1 R2 R3 R4 AFS090 Function TRST GND GEB2/IO42PDB3V0 GEA2/IO42NDB3V0 NC VCC33PMP VCC15A NC AC1 AG3 AV3 AG4 NC GNDA VCC33A VCCNVM TCK TDI VCCNVM GNDNVM GNDA NC NC NC AG0 AG2 GNDA NC NC NC NC ADCGNDREF PTBASE GNDNVM VCCIB3 PCAP NC NC AFS250 Function TRST GND GEB2/IO59PDB3V0 IO59NDB3V0 GEA2/IO58PPB3V0 VCC33PMP VCC15A NC AC1 AG3 AV3 AG4 NC GNDA VCC33A VCCNVM TCK TDI VCCNVM GNDNVM GNDA NC NC NC AG0 AG2 GNDA AC5 NC NC NC ADCGNDREF PTBASE GNDNVM VCCIB3 PCAP NC NC AFS600 Function TRST GND GEB2/IO59PDB4V0 IO59NDB4V0 GEA2/IO58PPB4V0 VCC33PMP VCC15A AG0 AC3 AG5 AV5 AG6 AC8 GNDA VCC33A VCCNVM TCK TDI VCCNVM GNDNVM GNDA AC0 AG1 AV1 AG2 AG4 GNDA AC7 AV8 AG8 AV9 ADCGNDREF PTBASE GNDNVM VCCIB4 PCAP AT1 AT0 AFS1500 Function TRST GND GEB2/IO86PDB4V0 IO86NDB4V0 GEA2/IO85PPB4V0 VCC33PMP VCC15A AG0 AC3 AG5 AV5 AG6 AC8 GNDA VCC33A VCCNVM TCK TDI VCCNVM GNDNVM GNDA AC0 AG1 AV1 AG2 AG4 GNDA AC7 AV8 AG8 AV9 ADCGNDREF PTBASE GNDNVM VCCIB4 PCAP AT1 AT0 Revision 2 4- 17 Package Pin Assignments FG256 Pin Number R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 AFS090 Function AV0 AT0 AV1 AT3 AV4 NC NC NC NC NC PUB VCCIB1 GND NCAP VCC33N NC AT1 ATRTN0 AT2 ATRTN1 AT4 ATRTN2 NC NC GNDA VCC33A VAREF GND AFS250 Function AV0 AT0 AV1 AT3 AV4 AT5 AV5 NC NC NC PUB VCCIB1 GND NCAP VCC33N NC AT1 ATRTN0 AT2 ATRTN1 AT4 ATRTN2 NC NC GNDA VCC33A VAREF GND AFS600 Function AV2 AT2 AV3 AT5 AV6 AT7 AV7 AT9 AG9 AC9 PUB VCCIB2 GND NCAP VCC33N ATRTN0 AT3 ATRTN1 AT4 ATRTN2 AT6 ATRTN3 AT8 ATRTN4 GNDA VCC33A VAREF GND AFS1500 Function AV2 AT2 AV3 AT5 AV6 AT7 AV7 AT9 AG9 AC9 PUB VCCIB2 GND NCAP VCC33N ATRTN0 AT3 ATRTN1 AT4 ATRTN2 AT6 ATRTN3 AT8 ATRTN4 GNDA VCC33A VAREF GND 4- 18 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG484 A1 Ball Pad Corner 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4- 19 Package Pin Assignments FG484 Pin Number A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 AA1 AA2 AA3 AA4 AA5 AA6 AA7 AA8 AA9 AA10 AA11 AA12 AA13 AFS600 Function GND VCC GAA1/IO01PDB0V0 GAB0/IO02NDB0V0 GAB1/IO02PDB0V0 IO07NDB0V1 IO07PDB0V1 IO10PDB0V1 IO14NDB0V1 IO14PDB0V1 IO17PDB1V0 IO18PDB1V0 IO19NDB1V0 IO19PDB1V0 IO24NDB1V1 IO24PDB1V1 GBC0/IO26NDB1V1 GBA0/IO28NDB1V1 IO29NDB1V1 IO29PDB1V1 VCC GND VCC GND VCCIB4 VCCIB4 PCAP AG0 GNDA AG1 AG2 GNDA AG3 AG6 GNDA AFS1500 Function GND NC GAA1/IO01PDB0V0 GAB0/IO02NDB0V0 GAB1/IO02PDB0V0 IO07NDB0V1 IO07PDB0V1 IO09PDB0V1 IO13NDB0V2 IO13PDB0V2 IO24PDB1V0 IO26PDB1V0 IO27NDB1V1 IO27PDB1V1 IO35NDB1V2 IO35PDB1V2 GBC0/IO40NDB1V2 GBA0/IO42NDB1V2 IO43NDB1V2 IO43PDB1V2 NC GND NC GND VCCIB4 VCCIB4 PCAP AG0 GNDA AG1 AG2 GNDA AG3 AG6 GNDA Pin Number AA14 AA15 AA16 AA17 AA18 AA19 AA20 AA21 AA22 AB1 AB2 AB3 AB4 AB5 AB6 AB7 AB8 AB9 AB10 AB11 AB12 AB13 AB14 AB15 AB16 AB17 AB18 AB19 AB20 AB21 AB22 B1 B2 B3 B4 FG484 AFS600 Function AG7 AG8 GNDA AG9 VAREF VCCIB2 PTEM GND VCC GND VCC NC GND VCC33N AT0 ATRTN0 AT1 AT2 ATRTN1 AT3 AT6 ATRTN3 AT7 AT8 ATRTN4 AT9 VCC33A GND NC VCC GND VCC GND GAA0/IO01NDB0V0 GND AFS1500 Function AG7 AG8 GNDA AG9 VAREF VCCIB2 PTEM GND NC GND NC IO94NSB4V0 GND VCC33N AT0 ATRTN0 AT1 AT2 ATRTN1 AT3 AT6 ATRTN3 AT7 AT8 ATRTN4 AT9 VCC33A GND IO76NPB2V0 NC GND NC GND GAA0/IO01NDB0V0 GND 4- 20 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG484 Pin Number B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 AFS600 Function IO05NDB0V0 IO05PDB0V0 GND IO10NDB0V1 IO13PDB0V1 GND IO17NDB1V0 IO18NDB1V0 GND IO21NDB1V0 IO21PDB1V0 GND GBC1/IO26PDB1V1 GBA1/IO28PDB1V1 GND VCCPLB GND VCC IO82PDB4V0 NC IO00NDB0V0 IO00PDB0V0 VCCIB0 IO06NDB0V0 IO06PDB0V0 VCCIB0 IO13NDB0V1 IO11PDB0V1 VCCIB0 VCCIB1 IO20NDB1V0 IO20PDB1V0 VCCIB1 IO25NDB1V1 GBB0/IO27NDB1V1 AFS1500 Function IO04NDB0V0 IO04PDB0V0 GND IO09NDB0V1 IO11PDB0V1 GND IO24NDB1V0 IO26NDB1V0 GND IO31NDB1V1 IO31PDB1V1 GND GBC1/IO40PDB1V2 GBA1/IO42PDB1V2 GND VCCPLB GND NC IO121PDB4V0 IO122PSB4V0 IO00NDB0V0 IO00PDB0V0 VCCIB0 IO05NDB0V1 IO05PDB0V1 VCCIB0 IO11NDB0V1 IO14PDB0V2 VCCIB0 VCCIB1 IO29NDB1V1 IO29PDB1V1 VCCIB1 IO37NDB1V2 GBB0/IO41NDB1V2 Pin Number C18 C19 C20 C21 C22 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 D21 D22 E1 E2 E3 E4 E5 E6 E7 E8 FG484 AFS600 Function VCCIB1 VCOMPLB GBA2/IO30PDB2V0 NC GBB2/IO31PDB2V0 IO82NDB4V0 GND IO83NDB4V0 AFS1500 Function VCCIB1 VCOMPLB GBA2/IO44PDB2V0 IO48PSB2V0 GBB2/IO45PDB2V0 IO121NDB4V0 GND IO123NDB4V0 GAC2/IO83PDB4V0 GAC2/IO123PDB4V0 GAA2/IO85PDB4V0 GAA2/IO125PDB4V0 GAC0/IO03NDB0V0 GAC1/IO03PDB0V0 IO09NDB0V1 IO09PDB0V1 IO11NDB0V1 IO16NDB1V0 IO16PDB1V0 NC IO23NDB1V1 IO23PDB1V1 IO25PDB1V1 GBB1/IO27PDB1V1 VCCIB2 NC IO30NDB2V0 GND IO31NDB2V0 IO81NDB4V0 IO81PDB4V0 VCCIB4 GAC0/IO03NDB0V0 GAC1/IO03PDB0V0 IO10NDB0V1 IO10PDB0V1 IO14NDB0V2 IO23NDB1V0 IO23PDB1V0 IO32NPB1V1 IO34NDB1V1 IO34PDB1V1 IO37PDB1V2 GBB1/IO41PDB1V2 VCCIB2 IO47PPB2V0 IO44NDB2V0 GND IO45NDB2V0 IO120NDB4V0 IO120PDB4V0 VCCIB4 GAB2/IO84PDB4V0 GAB2/IO124PDB4V0 IO85NDB4V0 GND VCCIB0 NC IO125NDB4V0 GND VCCIB0 IO08NDB0V1 Revision 2 4- 21 Package Pin Assignments FG484 Pin Number E9 E10 E11 E12 E13 E14 E15 E16 E17 E18 E19 E20 E21 E22 F1 F2 F3 F4 F5 F6 F7 F8 F9 F10 F11 F12 F13 F14 F15 F16 F17 F18 F19 F20 F21 AFS600 Function NC GND IO15NDB1V0 IO15PDB1V0 GND NC NC VCCIB1 GND NC IO33PDB2V0 VCCIB2 IO32NDB2V0 GBC2/IO32PDB2V0 IO80NDB4V0 IO80PDB4V0 NC IO84NDB4V0 GND VCOMPLA VCCPLA VCCIB0 IO08NDB0V1 IO08PDB0V1 VCCIB0 VCCIB1 IO22NDB1V0 IO22PDB1V0 VCCIB1 NC NC GND IO33NDB2V0 IO34PDB2V0 IO34NDB2V0 AFS1500 Function IO08PDB0V1 GND IO22NDB1V0 IO22PDB1V0 GND IO32PPB1V1 IO36NPB1V2 VCCIB1 GND IO47NPB2V0 IO49PDB2V0 VCCIB2 IO46NDB2V0 GBC2/IO46PDB2V0 IO118NDB4V0 IO118PDB4V0 IO119NSB4V0 IO124NDB4V0 GND VCOMPLA VCCPLA VCCIB0 IO12NDB0V1 IO12PDB0V1 VCCIB0 VCCIB1 IO30NDB1V1 IO30PDB1V1 VCCIB1 IO36PPB1V2 IO38NPB1V2 GND IO49NDB2V0 IO50PDB2V0 IO50NDB2V0 Pin Number F22 G1 G2 G3 G4 G5 G6 G7 G8 G9 G10 G11 G12 G13 G14 G15 G16 G17 G18 G19 G20 G21 G22 H1 H2 H3 H4 H5 H6 H7 H8 H9 H10 H11 H12 FG484 AFS600 Function IO35PDB2V0 IO77PDB4V0 GND IO78NDB4V0 IO78PDB4V0 VCCIB4 NC VCCIB4 GND IO04NDB0V0 IO04PDB0V0 IO12NDB0V1 IO12PDB0V1 NC NC GND NC NC VCCIB2 IO36PDB2V0 IO36NDB2V0 GND IO35NDB2V0 IO77NDB4V0 IO76PDB4V0 VCCIB4 IO79NDB4V0 IO79PDB4V0 NC GND VCC VCCIB0 GND VCCIB0 VCCIB1 AFS1500 Function IO51PDB2V0 IO115PDB4V0 GND IO116NDB4V0 IO116PDB4V0 VCCIB4 IO117PDB4V0 VCCIB4 GND IO06NDB0V1 IO06PDB0V1 IO16NDB0V2 IO16PDB0V2 IO28NDB1V1 IO28PDB1V1 GND IO38PPB1V2 IO53PDB2V0 VCCIB2 IO52PDB2V0 IO52NDB2V0 GND IO51NDB2V0 IO115NDB4V0 IO113PDB4V0 VCCIB4 IO114NDB4V0 IO114PDB4V0 IO117NDB4V0 GND VCC VCCIB0 GND VCCIB0 VCCIB1 4- 22 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG484 Pin Number H13 H14 H15 H16 H17 H18 H19 H20 H21 H22 J1 J2 J3 J4 J5 J6 J7 J8 J9 J10 J11 J12 J13 J14 J15 J16 J17 J18 J19 J20 J21 J22 K1 K2 K3 AFS600 Function GND VCCIB1 GND GND NC IO38PDB2V0 GCA2/IO39PDB2V0 VCCIB2 IO37NDB2V0 IO37PDB2V0 NC IO76NDB4V0 AFS1500 Function GND VCCIB1 GND GND IO53NDB2V0 IO57PDB2V0 GCA2/IO59PDB2V0 VCCIB2 IO54NDB2V0 IO54PDB2V0 IO112PPB4V0 IO113NDB4V0 Pin Number K4 K5 K6 K7 K8 K9 K10 K11 K12 K13 K14 K15 K16 K17 K18 K19 K20 K21 K22 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 L15 L16 FG484 AFS600 Function IO75NDB4V0 GND NC NC GND VCC GND VCC GND VCC GND GND IO40NDB2V0 NC GND NC IO41NDB2V0 GND IO42NDB2V0 IO73NDB4V0 VCCOSC VCCIB4 XTAL2 AFS1500 Function IO110NDB4V0 GND IO104NDB4V0 IO111NDB4V0 GND VCC GND VCC GND VCC GND GND IO60NDB2V0 IO58PDB2V0 GND IO68NPB2V0 IO61NDB2V0 GND IO56NDB2V0 IO108NDB4V0 VCCOSC VCCIB4 XTAL2 GFB2/IO74PDB4V0 GFB2/IO109PDB4V0 GFA2/IO75PDB4V0 NC NC NC VCCIB4 GND VCC GND VCC GND VCC VCCIB2 GCB2/IO40PDB2V0 NC IO38NDB2V0 IO39NDB2V0 GCC2/IO41PDB2V0 NC IO42PDB2V0 GFA2/IO110PDB4V0 IO112NPB4V0 IO104PDB4V0 IO111PDB4V0 VCCIB4 GND VCC GND VCC GND VCC VCCIB2 GCB2/IO60PDB2V0 IO58NDB2V0 IO57NDB2V0 IO59NDB2V0 GCC2/IO61PDB2V0 IO55PSB2V0 IO56PDB2V0 GFC1/IO72PDB4V0 GFC1/IO107PDB4V0 VCCIB4 VCCIB4 GFB1/IO71PDB4V0 GFB1/IO106PDB4V0 VCCIB4 GND VCC GND VCC GND VCC VCCIB2 IO48PDB2V0 VCCIB4 GND VCC GND VCC GND VCC VCCIB2 IO70PDB2V0 GFC2/IO73PDB4V0 GFC2/IO108PDB4V0 GND IO74NDB4V0 GND IO109NDB4V0 Revision 2 4- 23 Package Pin Assignments FG484 Pin Number L17 L18 L19 L20 L21 L22 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 M12 M13 M14 M15 M16 M17 M18 M19 M20 M21 M22 N1 N2 N3 N4 N5 N6 N7 AFS600 Function VCCIB2 IO46PDB2V0 GCA1/IO45PDB2V0 VCCIB2 GCC0/IO43NDB2V0 GCC1/IO43PDB2V0 NC XTAL1 VCCIB4 GNDOSC AFS1500 Function VCCIB2 IO69PDB2V0 GCA1/IO64PDB2V0 VCCIB2 GCC0/IO62NDB2V0 GCC1/IO62PDB2V0 IO103PDB4V0 XTAL1 VCCIB4 GNDOSC Pin Number N8 N9 N10 N11 N12 N13 N14 N15 N16 N17 N18 N19 N20 N21 N22 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 P15 P16 P17 P18 P19 P20 FG484 AFS600 Function GND GND VCC GND VCC GND VCC GND GDB2/IO56PDB2V0 NC GND IO47NDB2V0 IO47PDB2V0 GND IO49PDB2V0 GFA1/IO70PDB4V0 AFS1500 Function GND GND VCC GND VCC GND VCC GND GDB2/IO83PDB2V0 IO78PDB2V0 GND IO72NDB2V0 IO72PDB2V0 GND IO71PDB2V0 GFA1/IO105PDB4V0 GFC0/IO72NDB4V0 GFC0/IO107NDB4V0 VCCIB4 VCCIB4 GFB0/IO71NDB4V0 GFB0/IO106NDB4V0 VCCIB4 VCC GND VCC GND VCC GND VCCIB2 IO48NDB2V0 VCCIB2 IO46NDB2V0 GCA0/IO45NDB2V0 VCCIB2 GCB0/IO44NDB2V0 GCB1/IO44PDB2V0 NC GND IO68PDB4V0 NC GND NC NC VCCIB4 VCC GND VCC GND VCC GND VCCIB2 IO70NDB2V0 VCCIB2 IO69NDB2V0 GCA0/IO64NDB2V0 VCCIB2 GCB0/IO63NDB2V0 GCB1/IO63PDB2V0 IO103NDB4V0 GND IO101PDB4V0 IO100NPB4V0 GND IO99PDB4V0 IO97PDB4V0 GFA0/IO70NDB4V0 GFA0/IO105NDB4V0 IO68NDB4V0 IO65PDB4V0 IO65NDB4V0 NC NC VCCIB4 VCC GND VCC GND VCC GND VCCIB2 IO56NDB2V0 NC GDA1/IO54PDB2V0 GDB1/IO53PDB2V0 IO51NDB2V0 IO101NDB4V0 IO96PDB4V0 IO96NDB4V0 IO99NDB4V0 IO97NDB4V0 VCCIB4 VCC GND VCC GND VCC GND VCCIB2 IO83NDB2V0 IO78NDB2V0 GDA1/IO81PDB2V0 GDB1/IO80PDB2V0 IO73NDB2V0 4- 24 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG484 Pin Number P21 P22 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 R19 R20 R21 R22 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 AFS600 Function IO51PDB2V0 IO49NDB2V0 IO69PDB4V0 IO69NDB4V0 VCCIB4 IO64PDB4V0 IO64NDB4V0 NC GND GND VCC33A GNDA VCC33A GNDA VCC33A GNDA VCC GND NC GDA0/IO54NDB2V0 GDB0/IO53NDB2V0 VCCIB2 IO50NDB2V0 IO50PDB2V0 NC GND IO66PDB4V0 IO66NDB4V0 VCCIB4 NC GNDNVM GNDA NC AV4 NC AFS1500 Function IO73PDB2V0 IO71NDB2V0 IO102PDB4V0 IO102NDB4V0 VCCIB4 IO91PDB4V0 IO91NDB4V0 IO92PDB4V0 GND GND VCC33A GNDA VCC33A GNDA VCC33A GNDA VCC GND IO74NDB2V0 GDA0/IO81NDB2V0 GDB0/IO80NDB2V0 VCCIB2 IO75NDB2V0 IO75PDB2V0 IO100PPB4V0 GND IO95PDB4V0 IO95NDB4V0 VCCIB4 IO92NDB4V0 GNDNVM GNDA NC AV4 NC Pin Number T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 U1 U2 U3 U4 U5 U6 U7 U8 U9 U10 U11 U12 U13 U14 U15 U16 U17 U18 U19 U20 U21 U22 V1 V2 FG484 AFS600 Function AV5 AC5 NC GNDA NC NC VCCIB2 IO55NDB2V0 GDA2/IO55PDB2V0 GND GDC1/IO52PDB2V0 IO67PDB4V0 IO67NDB4V0 GEC1/IO63PDB4V0 GEC0/IO63NDB4V0 GND VCCNVM VCCIB4 VCC15A GNDA AC4 VCC33A GNDA AG5 GNDA PUB VCCIB2 TDI GND IO57NDB2V0 GDC2/IO57PDB2V0 NC GDC0/IO52NDB2V0 GEB1/IO62PDB4V0 GEB0/IO62NDB4V0 AFS1500 Function AV5 AC5 NC GNDA IO77PPB2V0 IO74PDB2V0 VCCIB2 IO82NDB2V0 GDA2/IO82PDB2V0 GND GDC1/IO79PDB2V0 IO98PDB4V0 IO98NDB4V0 GEC1/IO90PDB4V0 GEC0/IO90NDB4V0 GND VCCNVM VCCIB4 VCC15A GNDA AC4 VCC33A GNDA AG5 GNDA PUB VCCIB2 TDI GND IO84NDB2V0 GDC2/IO84PDB2V0 IO77NPB2V0 GDC0/IO79NDB2V0 GEB1/IO89PDB4V0 GEB0/IO89NDB4V0 Revision 2 4- 25 Package Pin Assignments FG484 Pin Number V3 V4 V5 V6 V7 V8 V9 V10 V11 V12 V13 V14 V15 V16 V17 V18 V19 V20 V21 V22 W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14 W15 AFS600 Function VCCIB4 GEA1/IO61PDB4V0 GEA0/IO61NDB4V0 GND VCC33PMP NC VCC33A AG4 AT4 ATRTN2 AT5 VCC33A NC VCC33A GND TMS VJTAG VCCIB2 TRST TDO NC GND NC GEB2/IO59PDB4V0 IO59NDB4V0 AV0 GNDA AV1 AV2 GNDA AV3 AV6 GNDA AV7 AV8 AFS1500 Function VCCIB4 GEA1/IO88PDB4V0 GEA0/IO88NDB4V0 GND VCC33PMP NC VCC33A AG4 AT4 ATRTN2 AT5 VCC33A NC VCC33A GND TMS VJTAG VCCIB2 TRST TDO IO93PDB4V0 GND IO93NDB4V0 GEB2/IO86PDB4V0 IO86NDB4V0 AV0 GNDA AV1 AV2 GNDA AV3 AV6 GNDA AV7 AV8 Pin Number W16 W17 W18 W19 W20 W21 W22 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 Y16 Y17 Y18 Y19 Y20 Y21 Y22 FG484 AFS600 Function GNDA AV9 VCCIB2 NC TCK GND NC GEC2/IO60PDB4V0 IO60NDB4V0 GEA2/IO58PDB4V0 IO58NDB4V0 NCAP AC0 VCC33A AC1 AC2 VCC33A AC3 AC6 VCC33A AC7 AC8 VCC33A AC9 ADCGNDREF PTBASE GNDNVM VCCNVM VPUMP AFS1500 Function GNDA AV9 VCCIB2 IO68PPB2V0 TCK GND IO76PPB2V0 GEC2/IO87PDB4V0 IO87NDB4V0 GEA2/IO85PDB4V0 IO85NDB4V0 NCAP AC0 VCC33A AC1 AC2 VCC33A AC3 AC6 VCC33A AC7 AC8 VCC33A AC9 ADCGNDREF PTBASE GNDNVM VCCNVM VPUMP 4- 26 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG676 A1 Ball Pad Corner 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 76 54 3 21 A B C D E F G H J K L M N P R T U V W Y AA AB AC AD AE AF Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/default.aspx. Revision 2 4- 27 Package Pin Assignments FG676 Pin Number A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 AA1 AA2 AA3 AA4 AA5 AA6 AA7 AA8 AA9 AA10 AFS1500 Function NC GND NC NC GND NC NC GND IO17NDB0V2 IO17PDB0V2 GND IO18NDB0V2 IO18PDB0V2 IO20NDB0V2 IO20PDB0V2 GND IO21PDB0V2 IO21NDB0V2 GND IO39NDB1V2 IO39PDB1V2 GND NC NC GND NC NC VCCIB4 IO93PDB4V0 GND IO93NDB4V0 GEB2/IO86PDB4V0 IO86NDB4V0 AV0 GNDA AV1 Pin Number AA11 AA12 AA13 AA14 AA15 AA16 AA17 AA18 AA19 AA20 AA21 AA22 AA23 AA24 AA25 AA26 AB1 AB2 AB3 AB4 AB5 AB6 AB7 AB8 AB9 AB10 AB11 AB12 AB13 AB14 AB15 AB16 AB17 AB18 AB19 AB20 FG676 AFS1500 Function AV2 GNDA AV3 AV6 GNDA AV7 AV8 GNDA AV9 VCCIB2 IO68PPB2V0 TCK GND IO76PPB2V0 VCCIB2 NC GND NC GEC2/IO87PDB4V0 IO87NDB4V0 GEA2/IO85PDB4V0 IO85NDB4V0 NCAP AC0 VCC33A AC1 AC2 VCC33A AC3 AC6 VCC33A AC7 AC8 VCC33A AC9 ADCGNDREF Pin Number AB21 AB22 AB23 AB24 AB25 AB26 AC1 AC2 AC3 AC4 AC5 AC6 AC7 AC8 AC9 AC10 AC11 AC12 AC13 AC14 AC15 AC16 AC17 AC18 AC19 AC20 AC21 AC22 AC23 AC24 AC25 AC26 AD1 AD2 AD3 AD4 FG676 AFS1500 Function PTBASE GNDNVM VCCNVM VPUMP NC GND NC NC NC GND VCCIB4 VCCIB4 PCAP AG0 GNDA AG1 AG2 GNDA AG3 AG6 GNDA AG7 AG8 GNDA AG9 VAREF VCCIB2 PTEM GND NC NC NC NC NC GND NC 4- 28 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG676 Pin Number AD5 AD6 AD7 AD8 AD9 AD10 AD11 AD12 AD13 AD14 AD15 AD16 AD17 AD18 AD19 AD20 AD21 AD22 AD23 AD24 AD25 AD26 AE1 AE2 AE3 AE4 AE5 AE6 AE7 AE8 AE9 AE10 AE11 AE12 AE13 AE14 AFS1500 Function IO94NPB4V0 GND VCC33N AT0 ATRTN0 AT1 AT2 ATRTN1 AT3 AT6 ATRTN3 AT7 AT8 ATRTN4 AT9 VCC33A GND IO76NPB2V0 NC GND NC NC GND GND NC NC NC NC NC NC GNDA NC NC GNDA NC NC Pin Number AE15 AE16 AE17 AE18 AE19 AE20 AE21 AE22 AE23 AE24 AE25 AE26 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15 AF16 AF17 AF18 AF19 AF20 AF21 AF22 AF23 AF24 FG676 AFS1500 Function GNDA NC NC GNDA NC NC NC NC NC NC GND GND NC GND NC NC NC NC NC NC VCC33A NC NC VCC33A NC NC VCC33A NC NC VCC33A NC NC NC NC NC NC Pin Number AF25 AF26 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 C1 C2 C3 C4 C5 C6 C7 C8 FG676 AFS1500 Function GND NC GND GND NC NC NC VCCIB0 NC NC VCCIB0 IO15NDB0V2 IO15PDB0V2 VCCIB0 IO19NDB0V2 IO19PDB0V2 VCCIB1 IO25NDB1V0 IO25PDB1V0 VCCIB1 IO33NDB1V1 IO33PDB1V1 VCCIB1 NC NC NC GND GND NC NC GND NC GAA1/IO01PDB0V0 GAB0/IO02NDB0V0 GAB1/IO02PDB0V0 IO07NDB0V1 Revision 2 4- 29 Package Pin Assignments FG676 Pin Number C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C23 C24 C25 C26 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 D17 D18 AFS1500 Function IO07PDB0V1 IO09PDB0V1 IO13NDB0V2 IO13PDB0V2 IO24PDB1V0 IO26PDB1V0 IO27NDB1V1 IO27PDB1V1 IO35NDB1V2 IO35PDB1V2 GBC0/IO40NDB1V2 GBA0/IO42NDB1V2 IO43NDB1V2 IO43PDB1V2 NC GND NC NC NC NC NC GND GAA0/IO01NDB0V0 GND IO04NDB0V0 IO04PDB0V0 GND IO09NDB0V1 IO11PDB0V1 GND IO24NDB1V0 IO26NDB1V0 GND IO31NDB1V1 IO31PDB1V1 GND Pin Number D19 D20 D21 D22 D23 D24 D25 D26 E1 E2 E3 E4 E5 E6 E7 E8 E9 E10 E11 E12 E13 E14 E15 E16 E17 E18 E19 E20 E21 E22 E23 E24 E25 E26 F1 F2 FG676 AFS1500 Function GBC1/IO40PDB1V2 GBA1/IO42PDB1V2 GND VCCPLB GND NC NC NC GND IO122NPB4V0 IO121PDB4V0 IO122PPB4V0 IO00NDB0V0 IO00PDB0V0 VCCIB0 IO05NDB0V1 IO05PDB0V1 VCCIB0 IO11NDB0V1 IO14PDB0V2 VCCIB0 VCCIB1 IO29NDB1V1 IO29PDB1V1 VCCIB1 IO37NDB1V2 GBB0/IO41NDB1V2 VCCIB1 VCOMPLB GBA2/IO44PDB2V0 IO48PPB2V0 GBB2/IO45PDB2V0 NC GND NC VCCIB4 Pin Number F3 F4 F5 F6 F7 F8 F9 F10 F11 F12 F13 F14 F15 F16 F17 F18 F19 F20 F21 F22 F23 F24 F25 F26 G1 G2 G3 G4 G5 G6 G7 G8 G9 G10 G11 G12 FG676 AFS1500 Function IO121NDB4V0 GND IO123NDB4V0 GAC2/IO123PDB4V0 GAA2/IO125PDB4V0 GAC0/IO03NDB0V0 GAC1/IO03PDB0V0 IO10NDB0V1 IO10PDB0V1 IO14NDB0V2 IO23NDB1V0 IO23PDB1V0 IO32NPB1V1 IO34NDB1V1 IO34PDB1V1 IO37PDB1V2 GBB1/IO41PDB1V2 VCCIB2 IO47PPB2V0 IO44NDB2V0 GND IO45NDB2V0 VCCIB2 NC NC IO119PPB4V0 IO120NDB4V0 IO120PDB4V0 VCCIB4 GAB2/IO124PDB4V0 IO125NDB4V0 GND VCCIB0 IO08NDB0V1 IO08PDB0V1 GND 4- 30 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG676 Pin Number G13 G14 G15 G16 G17 G18 G19 G20 G21 G22 G23 G24 G25 G26 H1 H2 H3 H4 H5 H6 H7 H8 H9 H10 H11 H12 H13 H14 H15 H16 H17 H18 H19 H20 H21 H22 AFS1500 Function IO22NDB1V0 IO22PDB1V0 GND IO32PPB1V1 IO36NPB1V2 VCCIB1 GND IO47NPB2V0 IO49PDB2V0 VCCIB2 IO46NDB2V0 GBC2/IO46PDB2V0 IO48NPB2V0 NC GND NC IO118NDB4V0 IO118PDB4V0 IO119NPB4V0 IO124NDB4V0 GND VCOMPLA VCCPLA VCCIB0 IO12NDB0V1 IO12PDB0V1 VCCIB0 VCCIB1 IO30NDB1V1 IO30PDB1V1 VCCIB1 IO36PPB1V2 IO38NPB1V2 GND IO49NDB2V0 IO50PDB2V0 Pin Number H23 H24 H25 H26 J1 J2 J3 J4 J5 J6 J7 J8 J9 J10 J11 J12 J13 J14 J15 J16 J17 J18 J19 J20 J21 J22 J23 J24 J25 J26 K1 K2 K3 K4 K5 K6 FG676 AFS1500 Function IO50NDB2V0 IO51PDB2V0 NC GND NC VCCIB4 IO115PDB4V0 GND IO116NDB4V0 IO116PDB4V0 VCCIB4 IO117PDB4V0 VCCIB4 GND IO06NDB0V1 IO06PDB0V1 IO16NDB0V2 IO16PDB0V2 IO28NDB1V1 IO28PDB1V1 GND IO38PPB1V2 IO53PDB2V0 VCCIB2 IO52PDB2V0 IO52NDB2V0 GND IO51NDB2V0 VCCIB2 NC NC NC IO115NDB4V0 IO113PDB4V0 VCCIB4 IO114NDB4V0 Pin Number K7 K8 K9 K10 K11 K12 K13 K14 K15 K16 K17 K18 K19 K20 K21 K22 K23 K24 K25 K26 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 L15 L16 FG676 AFS1500 Function IO114PDB4V0 IO117NDB4V0 GND VCC VCCIB0 GND VCCIB0 VCCIB1 GND VCCIB1 GND GND IO53NDB2V0 IO57PDB2V0 GCA2/IO59PDB2V0 VCCIB2 IO54NDB2V0 IO54PDB2V0 NC NC GND NC IO112PPB4V0 IO113NDB4V0 GFB2/IO109PDB4V0 GFA2/IO110PDB4V0 IO112NPB4V0 IO104PDB4V0 IO111PDB4V0 VCCIB4 GND VCC GND VCC GND VCC Revision 2 4- 31 Package Pin Assignments FG676 Pin Number L17 L18 L19 L20 L21 L22 L23 L24 L25 L26 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 M12 M13 M14 M15 M16 M17 M18 M19 M20 M21 M22 M23 M24 M25 M26 AFS1500 Function VCCIB2 GCB2/IO60PDB2V0 IO58NDB2V0 IO57NDB2V0 IO59NDB2V0 GCC2/IO61PDB2V0 IO55PPB2V0 IO56PDB2V0 IO55NPB2V0 GND NC VCCIB4 GFC2/IO108PDB4V0 GND IO109NDB4V0 IO110NDB4V0 GND IO104NDB4V0 IO111NDB4V0 GND VCC GND VCC GND VCC GND GND IO60NDB2V0 IO58PDB2V0 GND IO68NPB2V0 IO61NDB2V0 GND IO56NDB2V0 VCCIB2 IO65PDB2V0 Pin Number N1 N2 N3 N4 N5 N6 N7 N8 N9 N10 N11 N12 N13 N14 N15 N16 N17 N18 N19 N20 N21 N22 N23 N24 N25 N26 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 FG676 AFS1500 Function NC NC IO108NDB4V0 VCCOSC VCCIB4 XTAL2 GFC1/IO107PDB4V0 VCCIB4 GFB1/IO106PDB4V0 VCCIB4 GND VCC GND VCC GND VCC VCCIB2 IO70PDB2V0 VCCIB2 IO69PDB2V0 GCA1/IO64PDB2V0 VCCIB2 GCC0/IO62NDB2V0 GCC1/IO62PDB2V0 IO66PDB2V0 IO65NDB2V0 NC NC IO103PDB4V0 XTAL1 VCCIB4 GNDOSC GFC0/IO107NDB4V0 VCCIB4 GFB0/IO106NDB4V0 VCCIB4 Pin Number P11 P12 P13 P14 P15 P16 P17 P18 P19 P20 P21 P22 P23 P24 P25 P26 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 R19 R20 FG676 AFS1500 Function VCC GND VCC GND VCC GND VCCIB2 IO70NDB2V0 VCCIB2 IO69NDB2V0 GCA0/IO64NDB2V0 VCCIB2 GCB0/IO63NDB2V0 GCB1/IO63PDB2V0 IO66NDB2V0 IO67PDB2V0 NC VCCIB4 IO103NDB4V0 GND IO101PDB4V0 IO100NPB4V0 GND IO99PDB4V0 IO97PDB4V0 GND GND VCC GND VCC GND VCC GND GDB2/IO83PDB2V0 IO78PDB2V0 GND 4- 32 R e visio n 2 Fusion Family of Mixed Signal FPGAs FG676 Pin Number R21 R22 R23 R24 R25 R26 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 U1 U2 U3 U4 AFS1500 Function IO72NDB2V0 IO72PDB2V0 GND IO71PDB2V0 VCCIB2 IO67NDB2V0 GND NC GFA1/IO105PDB4V0 GFA0/IO105NDB4V0 IO101NDB4V0 IO96PDB4V0 IO96NDB4V0 IO99NDB4V0 IO97NDB4V0 VCCIB4 VCC GND VCC GND VCC GND VCCIB2 IO83NDB2V0 IO78NDB2V0 GDA1/IO81PDB2V0 GDB1/IO80PDB2V0 IO73NDB2V0 IO73PDB2V0 IO71NDB2V0 NC GND NC NC IO102PDB4V0 IO102NDB4V0 Pin Number U5 U6 U7 U8 U9 U10 U11 U12 U13 U14 U15 U16 U17 U18 U19 U20 U21 U22 U23 U24 U25 U26 V1 V2 V3 V4 V5 V6 V7 V8 V9 V10 V11 V12 V13 V14 FG676 AFS1500 Function VCCIB4 IO91PDB4V0 IO91NDB4V0 IO92PDB4V0 GND GND VCC33A GNDA VCC33A GNDA VCC33A GNDA VCC GND IO74NDB2V0 GDA0/IO81NDB2V0 GDB0/IO80NDB2V0 VCCIB2 IO75NDB2V0 IO75PDB2V0 NC NC NC VCCIB4 IO100PPB4V0 GND IO95PDB4V0 IO95NDB4V0 VCCIB4 IO92NDB4V0 GNDNVM GNDA NC AV4 NC AV5 Pin Number V15 V16 V17 V18 V19 V20 V21 V22 V23 V24 V25 V26 W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14 W15 W16 W17 W18 W19 W20 W21 W22 W23 W24 FG676 AFS1500 Function AC5 NC GNDA IO77PPB2V0 IO74PDB2V0 VCCIB2 IO82NDB2V0 GDA2/IO82PDB2V0 GND GDC1/IO79PDB2V0 VCCIB2 NC GND IO94PPB4V0 IO98PDB4V0 IO98NDB4V0 GEC1/IO90PDB4V0 GEC0/IO90NDB4V0 GND VCCNVM VCCIB4 VCC15A GNDA AC4 VCC33A GNDA AG5 GNDA PUB VCCIB2 TDI GND IO84NDB2V0 GDC2/IO84PDB2V0 IO77NPB2V0 GDC0/IO79NDB2V0 Revision 2 4- 33 Package Pin Assignments FG676 Pin Number W25 W26 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 Y16 Y17 Y18 Y19 Y20 Y21 Y22 Y23 Y24 Y25 Y26 AFS1500 Function NC GND NC NC GEB1/IO89PDB4V0 GEB0/IO89NDB4V0 VCCIB4 GEA1/IO88PDB4V0 GEA0/IO88NDB4V0 GND VCC33PMP NC VCC33A AG4 AT4 ATRTN2 AT5 VCC33A NC VCC33A GND TMS VJTAG VCCIB2 TRST TDO NC NC 4- 34 R e visio n 2 5 – Datasheet Information List of Changes The following table lists critical changes that were made in each revision of the Fusion datasheet. Revision Revision 2 (March 2012) Changes The phrase "without debug" was removed from the "Soft ARM Cortex-M1 Fusion Devices (M1)" section (SAR 21390). The "In-System Programming (ISP) and Security" section, "Security" section, "Flash Advantages" section, and "Security" section were revised to clarify that although no existing security measures can give an absolute guarantee, Microsemi FPGAs implement the best security available in the industry (SAR 34721). The Y security option and Licensed DPA Logo was added to the "Product Ordering Codes" section. The trademarked Licensed DPA Logo identifies that a product is covered by a DPA counter-measures license from Cryptography Research (SAR 32151). The "Specifying I/O States During Programming" section is new (SAR 34693). The following information was added before Figure 2-17 • XTLOSC Macro: In the case where the Crystal Oscillator block is not used, the XTAL1 pin should be connected to GND and the XTAL2 pin should be left floating (SAR 24119). Table 2-12 • Fusion CCC/PLL Specification was updated. A note was added indicating that when the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available (SAR 34814). A note was added to Figure 2-27 • Real-Time Counter System (not all the signals are shown for the AB macro) stating that the user is only required to instantiate the VRPSM macro if the user wishes to specify PUPO behavior of the voltage regulator to be different from the default, or employ user logic to shut the voltage regulator off (SAR 21773). 2-30 Page I I, 1-2, 2-229 III 1-8 2-21 2-33 VPUMP was incorrectly represented as VPP in several places. This was corrected to 2-34, 3-10 VPUMP in the "Standby and Sleep Mode Circuit Implementation" section and Table 3-8 • AFS1500 Quiescent Supply Current Characteristics through Table 3-11 • AFS090 Quiescent Supply Current Characteristics (21963). Additional information was added to the Flash Memory Block "Write Operation" section, including an explanation of the fact that a copy-page operation takes no less than 55 cycles (SAR 26338). 2-47 The "FlashROM" section was revised to refer to Figure 2-46 • FlashROM Timing 2-56, 2-57 Diagram and Table 2-26 • FlashROM Access Time rather than stating 20 MHz as the maximum FlashROM access clock and 10 ns as the time interval for D0 to become valid or invalid (SAR 22105). Revision 2 5 -1 Datasheet Information Revision Revision 2 (continued) Changes The following figures were deleted (SAR 29991). Reference was made to a new application note, Simultaneous Read-Write Operations in Dual-Port SRAM for FlashBased cSoCs and FPGAs, which covers these cases in detail (SAR 34862). Figure 2-55 • Write Access after Write onto Same Address Figure 2-56 • Read Access after Write onto Same Address Figure 2-57 • Write Access after Read onto Same Address Page The port names in the SRAM "Timing Waveforms", "Timing Characteristics", SRAM 2-66, tables, Figure 2-55 • RAM Reset. Applicable to both RAM4K9 and RAM512x18., and 2-69, the FIFO "Timing Characteristics" tables were revised to ensure consistency with the 2-68, 2-77 software names (SAR 35753). In several places throughout the datasheet, GNDREF was corrected to ADCGNDREF (SAR 20783): Figure 2-62 • Analog Block Macro Table 2-36 • Analog Block Pin Description "ADC Operation" section The following note was added below Figure 2-76 • Timing Diagram for the Temperature Monitor Strobe Signal: When the IEEE 1149.1 Boundary Scan EXTEST instruction is executed, the AG pad drive strength ceases and becomes a 1 µA sink into the Fusion device. (SAR 24796). The "Analog-to-Digital Converter Block" section was extensively revised, reorganizing the information and adding the "ADC Theory of Operation" section and "Acquisition Time or Sample Time Control" section. The "ADC Example" section was reworked and corrected (SAR 20577). Table 2-49 • Analog Channel Specifications was modified to include calibrated and uncalibrated values for offset (AFS090 and AFS250) for the external and internal temperature monitors. The "Offset" section was revised accordingly and now references Table 2-49 • Analog Channel Specifications (SARs 22647, 27015). The "Intra-Conversion" section and "Injected Conversion" section had definitions incorrectly interchanged and have been corrected. Figure 2-90 • Intra-Conversion Timing Diagram and Figure 2-91 • Injected Conversion Timing Diagram were also incorrectly interchanged and have been replaced correctly. Reference in the figure notes to EQ 10 has been corrected to EQ 23 (SAR 20547). The "Examples" section for calibrating accuracy for ADC channels were revised and corrected to make them consistent with terminology in the associated tables (SARs 36791, 36773). A note was added to Table 2-56 • Analog Quad ACM Byte Assignment and the introductory text for Table 2-66 • Internal Temperature Monitor Control Truth Table, stating that for the internal temperature monitor to function, Bit 0 of Byte 2 for all 10 Quads must be set (SAR 34418). tDOUT was corrected to tDIN in Figure 2-114 • Input Buffer Timing Model and Delays (example) (SAR 37115). The formulas in the table notes for Table 2-97 • I/O Weak Pull-Up/Pull-Down Resistances were corrected (SAR 34751). The AC Loading figures in the "Single-Ended I/O Characteristics" section were updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O Software Settings" section (SAR 34877). 2-98 2-79 2-80 2-106 2-95 2-97, 2-119 2-111, 2-114, 2-115 2-126 2-131, 2-133 2-163 2-173 2-177 5-2 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Revision Revision 2 (continued) Changes The following notes were removed from Table 2-168 • Minimum and Maximum DC Input and Output Levels (SAR 34808): ±5% Page 2-211 Differential input voltage = ±350 mV An incomplete, duplicate sentence was removed from the end of the "GNDAQ Ground (analog quiet)" pin description (SAR 30185). Information about configuration of unused I/Os was added to the "User Pins" section (SAR 32642). The following information was added to the pin description for "XTAL1 Crystal Oscillator Circuit Input" and "XTAL2 Crystal Oscillator Circuit Input" (SAR 24119). The input resistance to ground value in Table 3-3 • Input Resistance of Analog Pads for Analog Input (direct input to ADC), was corrected from 1 MΩ (typical) to 2 kΩ (typical) (SAR 34371). The prescalar range for the 'Analog Input (direct input to ADC)" configurations was removed as inapplicable for direct inputs. The input resistance for direct inputs is covered in Table 2-50 • ADC Characteristics in Direct Input Mode (SAR 31201). The Storage Temperature column in Table 3-5 • FPGA Programming, Storage, and Operating Limits stated Min. TJ twice for commercial and industrial product grades and has been corrected to Min. TJ and Max. TJ (SAR 29416). The reference to guidelines for global spines and VersaTile rows, given in the "Global Clock Dynamic Contribution—PCLOCK" section, was corrected to the "Spine Architecture" section of the Global Resources chapter in the Fusion FPGA Fabric User's Guide (SAR 34741). Package names used in the "Package Pin Assignments" section were revised to match standards given in Package Mechanical Drawings (SAR 36612). July 2010 The versioning system for datasheets has been changed. Datasheets are assigned a revision number that increments each time the datasheet is revised. The "Fusion Device Status" table indicates the status for each device in the device family. The MicroBlade and Fusion datasheets have been combined. Pigeon Point information is new. CoreMP7 support was removed since it is no longer offered. –F was removed from the datasheet since it is no longer offered. The operating temperature was changed from ambient to junction to better reflect actual conditions of operations. Commercial: 0°C to 85°C Industrial: –40°C to 100°C The version number category was changed from Preliminary to Production, which means the datasheet contains information based on final characterization. The version number changed from Preliminary v1.7 to v2.0. The "Integrated Analog Blocks and Analog I/Os" section was updated to include a reference to the "Analog System Characteristics" section in the Device Architecture chapter of the datasheet, which includes Table 2-46 • Analog Channel Specifications and specific voltage data. The phrase "Commercial-Case Conditions" in timing table titles was changed to "Commercial Temperature Range Conditions." The "Crystal Oscillator" section was updated significantly. Please review carefully. 1-4 2-225 2-227 2-229 3-4 3-5 3-24 4-1 N/A v2.0, Revision 1 (July 2009) N/A N/A 2-21 Revision 2 5 -3 Datasheet Information Revision v2.0, Revision 1 (continued) Changes The "Real-Time Counter (part of AB macro)" section was updated significantly. Please review carefully. There was a typo in Table 2-19 • Flash Memory Block Pin Names for the ERASEPAGE description; it was the same as DISCARDPAGE. As as a result, the ERASEPAGE description was updated. The tFMAXCLKNVM parameter was updated in Table 2-25 • Flash Memory Block Timing. Table 2-31 • RAM4K9 and Table 2-32 • RAM512X18 were updated. In Table 2-36 • Analog Block Pin Description, the Function description for PWRDWN was changed from "Comparator power-down if 1" to "ADC comparator power-down if 1. When asserted, the ADC will stop functioning, and the digital portion of the analog block will continue operating. This may result in invalid status flags from the analog block. Therefore, Microsemi does not recommend asserting the PWRDWN pin." Figure 2-73 • Gate Driver Example was updated. The "ADC Operation" section was updated. Please review carefully. Figure 2-90 • Intra-Conversion Timing Diagram and Figure 2-91 • Injected Conversion Timing Diagram are new. The "Typical Performance Characteristics" section is new. Table 2-49 • Analog Channel Specifications was significantly updated. Table 2-50 • ADC Characteristics in Direct Input Mode was significantly updated. In Table 2-52 • Calibrated Analog Channel Accuracy 1,2,3, Page 2-35 2-42 2-54 2-69 2-80 2-93 2-106 2-115 2-117 2-119 2-122 2-125 2-126 2-128 2-145 note 2 was updated. In Table 2-53 • Analog Channel Accuracy: Monitoring Standard Positive Voltages, note 1 was updated. In Table 2-54 • ACM Address Decode Table for Analog Quad, bit 89 was removed. The data in the 2.5 V LCMOS and LVCMOS 2.5 V / 5.0 V rows were updated in Table 2-75 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V Input Tolerance Capabilities. In Table 2-78 • Fusion Standard I/O Standards—OUT_DRIVE Settings, LVCMOS 1.5 V, for OUT_DRIVE 2, was changed from a dash to a check mark. The "VCC15A Analog Power Supply (1.5 V)" definition was changed from "A 1.5 V analog power supply input should be used to provide this input" to "1.5 V clean analog power supply input for use by the 1.5 V portion of the analog circuitry." In the "VCC33PMP Analog Power Supply (3.3 V)" pin description, the following text was changed from "VCC33PMP should be powered up before or simultaneously with VCC33A" to "VCC33PMP should be powered up simultaneously with or after VCC33A." The "VCCOSC Oscillator Power Supply (3.3 V)" section was updated to include information about when to power the pin. 2-154 2-225 2-225 2-225 5-4 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Revision v2.0, Revision 1 (July 2009) Changes In the "128-Bit AES Decryption" section, FIPS-192 was incorrect and changed to FIPS-197. The note in Table 2-84 • Fusion Standard and Advanced I/O Attributes vs. I/O Standard Applications was updated. For 1.5 V LVCMOS, the VIL and VIH parameters, 0.30 * VCCI was changed to 0.35 * VCCI and 0.70 * VCCI was changed to 0.65 * VCCI in Table 2-86 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions, Table 2-87 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions, and Table 2-88 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions. In Table 2-87 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions, the VIH max column was updated. Table 2-89 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial Conditions was updated to include notes 3 and 4. The temperature ranges were also updated in notes 1 and 2. The titles in Table 2-92 • Summary of I/O Timing Characteristics – Software Default Settings to Table 2-94 • Summary of I/O Timing Characteristics – Software Default Settings were updated to "VCCI = I/O Standard Dependent." Below Table 2-98 • I/O Short Currents IOSH/IOSL, the paragraph was updated to change 110°C to 100°C and three months was changed to six months. Table 2-99 • Short Current Event Duration before Failure was updated to remove 110°C data. In Table 2-101 • I/O Input Rise Time, Fall Time, and Related I/O Reliability, LVTTL/LVCMOS rows were changed from 110°C to 100°C. VCC33PMP was added to Table 3-1 • Absolute Maximum Ratings. In addition, conditions for AV, AC, AG, and AT were also updated. VCC33PMP was added to Table 3-2 • Recommended Operating Conditions. In addition, conditions for AV, AC, AG, and AT were also updated. Table 3-5 • FPGA Programming, Storage, and Operating Limits was updated to include new data and the temperature ranges were changed. The notes were removed from the table. Table 3-6 • Package Thermal Resistance was updated to include new data. In EQ 4 to EQ 6, the junction temperature was changed from 110°C to 100°C. Table 3-8 • AFS1500 Quiescent Supply Current Characteristics through Table 3-11 • AFS090 Quiescent Supply Current Characteristics are new and have replaced the Quiescent Supply Current Characteristics (IDDQ) table. In Table 3-14 • Different Components Contributing to the Dynamic Power Consumption in Fusion Devices, the power supply for PAC9 and PAC10 were changed from VMV/VCC to VCCI. In Table 3-15 • Different Components Contributing to the Static Power Consumption in Fusion Devices, the power supply for PDC7 and PDC8 were changed from VMV/VCC to VCCI. PDC1 was updated from TBD to 18. The "QN108" table was updated to remove the duplicates of pins B12 and B34. Page 2-230 2-158 2-166 to 2-167 2-167 2-169 to 2-170 2-174 2-176 2-176 3-1 3-3 3-5 3-7 3-8 to 3-8 3-10 to 3-16 3-22 3-23 4-2 Revision 2 5 -5 Datasheet Information Revision Preliminary v1.7 (October 2008) Changes The version number category was changed from Advance to Preliminary, which means the datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. For the VIL and VIH parameters, 0.30 * VCCI was changed to 0.35 * VCCI and 0.70 * VCCI was changed to 0.65 * VCCI in Table 2-126 • Minimum and Maximum DC Input and Output Levels. Page 2-195 Preliminary v1.7 (continued) The version number category was changed from Advance to Preliminary, which means the datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. The following updates were made to Table 2-141 • Minimum and Maximum DC Input and Output Levels: Temperature 213 283 Digital Output 00 1111 1101 01 0001 1011 N/A 2-202 358 01 0110 0110 – only the digital output was updated. Temperature 358 remains in the temperature column. In Advance v1.2, the "VAREF Analog Reference Voltage" pin description was significantly updated but the change was not noted in the change table. Advance v1.6 (August 2008) The title of the datasheet changed from Actel Programmable System Chips to Actel Fusion Mixed Signal FPGAs. In addition, all instances of programmable system chip were changed to mixed signal FPGA. 2-227 N/A The references to the Peripherals User’s Guide in the "No-Glitch MUX (NGMUX)" 2-32, 2-42 section and "Voltage Regulator Power Supply Monitor (VRPSM)" section were changed to Fusion Handbook. Advance v1.5 (July 2008) The following bullet was updated from High-Voltage Input Tolerance: ±12 V to HighVoltage Input Tolerance: 10.5 V to 12 V. The following bullet was updated from Programmable 1, 3, 10, 30 µA and 25 mA Drive Strengths to Programmable 1, 3, 10, 30 µA and 20 mA Drive Strengths. This bullet was added to the "Integrated A/D Converter (ADC) and Analog I/O" section: ADC Accuracy is Better than 1% In the "Integrated Analog Blocks and Analog I/Os" section, ±4 LSB was changed to 0.72. The following sentence was deleted: The input range for voltage signals is from –12 V to +12 V with full-scale output values from 0.125 V to 16 V. In addition, 2°C was changed to 3°C: "One analog input in each quad can be connected to an external temperature monitor diode and achieves detection accuracy of ±3ºC." The following sentence was deleted: The input range for voltage signals is from –12 V to +12 V with full-scale output values from 0.125 V to 16 V. The title of the datasheet changed from Actel Programmable System Chips to Actel Fusion Mixed Signal FPGAs. In addition, all instances of programmable system chip were changed to mixed signal FPGA. Advance v1.4 (July 2008) In Table 3-8 · Quiescent Supply Current references were updated for IDC2 and IDC3. Characteristics (IDDQ)1, footnote N/A 1-4 I I I 3-11 Footnote 3 and 4 were updated and footnote 5 is new. 5-6 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Revision Advance v1.3 (July 2008) Advance v1.2 (May 2008) Changes The "ADC Description" section was significantly updated. Please review carefully. Table 2-25 • Flash Memory Block Timing was significantly updated. The "VAREF Analog Reference Voltage" pin description section was significantly update. Please review it carefully. Table 2-45 • ADC Interface Timing was significantly updated. Table 2-56 • Direct Analog Input Switch Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3) was significantly updated. The following sentence was deleted from the "Voltage Monitor" section: The Analog Quad inputs are tolerant up to 12 V + 10%. The "180-Pin QFN" figure was updated. D1 to D4 are new and the figure was changed to bottom view. The note below the figure is new. Page 2-102 2-55 2-226 2-110 2-131 2-86 3-3 2-204 Advance v1.1 (May 2008) The following text was incorrect and therefore deleted: VCC33A Analog Power Filter Analog power pin for the analog power supply low-pass filter. An external 100 pF capacitor should be connected between this pin and ground. There is still a description of VCC33A on page 2-224. Advance v1.0 (January 2008) All Timing Characteristics tables were updated. For the Differential I/O Standards, the Standard I/O support tables are new. Table 2-3 • Array Coordinates was updated to change the max x and y values Table 2-12 • Fusion CCC/PLL Specification was updated. A note was added to Table 2-16 · RTC ACM Memory Map. A reference to the Peripheral’s User’s Guide was added to the "Voltage Regulator Power Supply Monitor (VRPSM)" section. In Table 2-25 • Flash Memory Block Timing, the commercial conditions were updated. In Table 2-26 • FlashROM Access Time, the commercial conditions were missing and have been added below the title of the table. In Table 2-36 • Analog Block Pin Description, the function description was updated for the ADCRESET. In the "Voltage Monitor" section, the following sentence originally had ± 10% and it was changed to +10%. The Analog Quad inputs are tolerant up to 12 V + 10%. In addition, this statement was deleted from the datasheet: Each I/O will draw power when connected to power (3 mA at 3 V). The "Terminology" section is new. The "Current Monitor" section was significantly updated. Figure 2-72 • Timing Diagram for Current Monitor Strobe to Figure 2-74 • Negative Current Monitor and Table 2-37 • Recommended Resistor for Different Current Range Measurement are new. The "ADC Description" section was updated to add the "Terminology" section. N/A 2-9 2-31 2-37 2-42 2-55 2-58 2-82 2-86 2-88 2-90 2-93 Revision 2 5 -7 Datasheet Information Revision Advance 1.0 (continued) Changes In the "Gate Driver" section, 25 mA was changed to 20 mA and 1.5 MHz was changed to 1.3 MHz. In addition, the following sentence was deleted: The maximum AG pad switching frequency is 1.25 MHz. The "Temperature Monitor" section was updated to rewrite most of the text and add Figure 2-78, Figure 2-79, and Table 2-38 • Temperature Data Format. In Table 2-38 • Temperature Data Format, the temperature K column was changed for 85°C from 538 to 358. In Table 2-45 • ADC Interface Timing, "Typical-Case" was changed to "Worst-Case." The "ADC Interface Timing" section is new. Table 2-46 • Analog Channel Specifications was updated. The "VCC15A Analog Power Supply (1.5 V)" section was updated. The "VCCPLA/B PLL Supply Voltage" section is new. In "VCCNVM Flash Memory Block Power Supply (1.5 V)" section, supply was changed to supply input. The "VCCPLA/B PLL Supply Voltage" pin description was updated to include the following statement: Actel recommends tying VCCPLX to VCC and using proper filtering circuits to decouple VCC noise from PLL. The "VCOMPLA/B Ground for West and East PLL" section was updated. In Table 2-47 • ADC Characteristics in Direct Input Mode, the commercial conditions were updated and note 2 is new. The VCC33ACAP signal name was changed to "XTAL1 Crystal Oscillator Circuit Input". Table 2-48 • Uncalibrated Analog Channel Accuracy* is new. Table 2-49 • Calibrated Analog Channel Accuracy 1,2,3 is new. Page 2-94 2-96 2-98 2-110 2-110 2-118 2-224 2-225 2-224 2-225 2-225 2-121 2-228 2-123 2-124 2-125 2-131 Table 2-50 • Analog Channel Accuracy: Monitoring Standard Positive Voltages is new. In Table 2-57 • Voltage Polarity Control Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3)*, the following I/O Bank names were changed: Hot-Swap changed to Standard LVDS changed to Advanced In Table 2-58 • Prescaler Op Amp Power-Down Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3), the following I/O Bank names were changed: Hot-Swap changed to Standard LVDS changed to Advanced In the title of Table 2-64 • I/O Standards Supported by Bank Type, LVDS I/O was changed to Advanced I/O. The title was changed from "Fusion Standard, LVDS, and Standard plus Hot-Swap I/O" to Table 2-68 • Fusion Standard and Advanced I/O Features. In addition, the table headings were all updated. The heading used to be Standard and LVDS I/O and was changed to Advanced I/O. Standard Hot-Swap was changed to just Standard. 2-132 2-134 2-136 5-8 R e vi s i o n 2 Fusion Family of Mixed Signal FPGAs Revision Advance 1.0 (continued) Changes This sentence was deleted from the "Slew Rate Control and Drive Strength" section: The Standard hot-swap I/Os do not support slew rate control. In addition, these references were changed: • From: Fusion hot-swap I/O (Table 2-69 on page 2-122) To: Fusion Standard I/O • From: Fusion LVDS I/O (Table 2-70 on page 2-122) To: Fusion Advanced I/O The "Cold-Sparing Support" section was significantly updated. In the title of Table 2-75 • Fusion Standard I/O Standards—OUT_DRIVE Settings, Hot-Swap was changed to Standard. In the title of Table 2-76 • Fusion Advanced I/O Standards—SLEW and OUT_DRIVE Settings, LVDS was changed to Advanced. In the title of Table 2-81 • Fusion Standard and Advanced I/O Attributes vs. I/O Standard Applications, LVDS was changed to Advanced. In Figure 2-111 • Naming Conventions of Fusion Devices with Three Digital I/O Banks and Figure 2-112 • Naming Conventions of Fusion Devices with Four I/O Banks the following names were changed: Hot-Swap changed to Standard LVDS changed to Advanced The Figure 2-113 • Timing Model was updated. In the notes for Table 2-86 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial and Industrial Conditions, TJ was changed to TA. This change table states that in the "208-Pin PQFP" table listed under the Advance v0.8 changes, the AFS090 device had a pin change. That is incorrect. Pin 102 was updated for AFS250 and AFS600. The function name changed from VCC33ACAP to VCC33A. Page 2-152 2-143 2-153 2-153 2-157 2-160 2-161 2-166 3-8 Advance v0.9 (October 2007) In the "Package I/Os: Single-/Double-Ended (Analog)" table, AFS1500/M7AFS1500 I/O counts were updated for the following devices: FG484: 223/109 FG676: 252/126 the II In the "108-Pin QFN" table, the function changed from VCC33ACAP to VCC33A for the following pin: B25 In the "180-Pin QFN" table, the function changed from VCC33ACAP to VCC33A for the following pins: AFS090: B29 AFS250: B29 In the "208-Pin PQFP" table, the function changed from VCC33ACAP to VCC33A for the following pins: AFS090: 102 AFS250: 102 In the "256-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the following pins: AFS090: T14 AFS250: T14 AFS600: T14 AFS1500: T14 3-2 3-4 3-8 3-12 Revision 2 5 -9 Datasheet Information Revision Advance v0.9 (continued) Changes In the "484-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the following pins: AFS600: AB18 AFS1500: AB18 In the "676-Pin FBGA" table, the function changed from VCC33ACAP to VCC33A for the following pins: AFS1500: AD20 Page 3-20 3-28 Advance v0.8 (June 2007) Figure 2-16 • Fusion Clocking Options and the "RC Oscillator" section were updated 2-20, 2-21 to change GND_OSC and VCC_OSC to GNDOSC and VCCOSC. Figure 2-19 • Fusion CCC Options: Global Buffers with the PLL Macro was updated to change the positions of OADIVRST and OADIVHALF, and a note was added. The "Crystal Oscillator" section was updated to include information about controlling and enabling/disabling the crystal oscillator. Table 2-11 · Electrical Characteristics of the Crystal Oscillator was updated to change the typical value of IDYNXTAL for 0.032–0.2 MHz to 0.19. The "1.5 V Voltage Regulator" section was updated to add "or floating" in the paragraph stating that an external pull-down is required on TRST to power down the VR. The "1.5 V Voltage Regulator" section was updated to include information on powering down with the VR. This sentence was updated in the "No-Glitch MUX (NGMUX)" section to delete GLA: The GLMUXCFG[1:0] configuration bits determine the source of the CLK inputs (i.e., internal signal or GLC). In Table 2-13 • NGMUX Configuration and Selection Table, 10 and 11 were deleted. The method to enable sleep mode was updated for bit 0 in Table 2-16 • RTC Control/Status Register. S2 was changed to D2 in Figure 2-39 • Read Waveform (Pipe Mode, 32-bit access) for RD[31:0] was updated. The definitions for bits 2 and 3 were updated in Table 2-24 • Page Status Bit Definition. Figure 2-46 • FlashROM Timing Diagram was updated. Table 2-26 • FlashROM Access Time is new. Figure 2-55 • Write Access After Write onto Same Address, Figure 2-56 • Read Access After Write onto Same Address, and Figure 2-57 • Write Access After Read onto Same Address are new. Table 2-31 • RAM4K9 and Table 2-32 • RAM512X18 were updated. The VAREF and SAMPLE functions were updated in Table 2-36 • Analog Block Pin Description. The title of Figure 2-72 • Timing Diagram for Current Monitor Strobe was updated to add the word "positive." The "Gate Driver" section was updated to give information about the switching rate in High Current Drive mode. 2-32 2-38 2-51 2-52 2-58 2-58 2-68– 2-70 2-71, 2-72 2-82 2-91 2-94 2-25 2-22 2-24 2-41 2-41 2-32 5- 10 R e visio n 2 Fusion Family of Mixed Signal FPGAs Revision Advance v0.8 (continued) Changes The "ADC Description" section was updated to include information about the SAMPLE and BUSY signals and the maximum frequencies for SYSCLK and ADCCLK. EQ 2 was updated to add parentheses around the entire expression in the denominator. Table 2-46 · Analog Channel Specifications and Table 2-47 · ADC Characteristics in Direct Input Mode were updated. The note was removed from Table 2-55 • Analog Multiplexer Truth Table—AV (x = 0), AC (x = 1), and AT (x = 3). Table 2-63 • Internal Temperature Monitor Control Truth Table is new. The "Cold-Sparing Support" section was updated to add information about cases where current draw can occur. Figure 2-104 • Solution 4 was updated. Table 2-75 • Fusion Standard I/O Standards—OUT_DRIVE Settings was updated. The "GNDA Ground (analog)" section and "GNDAQ Ground (analog quiet)" section were updated to add information about maximum differential voltage. The "VAREF Analog Reference Voltage" section and "VPUMP Programming Supply Voltage" section were updated. The "VCCPLA/B PLL Supply Voltage" section was updated to include information about the east and west PLLs. The VCOMPLF pin description was deleted. The "Axy Analog Input/Output" section was updated with information about grounding and floating the pin. The voltage range in the "VPUMP Programming Supply Voltage" section was updated. The parenthetical reference to "pulled up" was removed from the statement, "VPUMP can be left floating or can be tied (pulled up) to any voltage Page 2-102 2-118, 2-121 2-131 2-132 2-143 2-147 2-153 2-224 2-226 2-225 N/A 2-226 2-225 between 0 V and 3.6 V." The "ATRTNx Temperature Monitor Return" section was updated with information about grounding and floating the pin. The following text was deleted from the "VREF I/O Voltage Reference" section: (all digital I/O). The "NCAP Negative Capacitor" section and "PCAP Positive Capacitor" section were updated to include information about the type of capacitor that is required to connect the two. 1 µF was changed to 100 pF in the "XTAL1 Crystal Oscillator Circuit Input". The "Programming" section was updated to include information about VCCOSC. The VMV pins have now been tied internally with the VCCI pins. The AFS090"108-Pin QFN" table was updated. The AFS090 and AFS250 devices were updated in the "108-Pin QFN" table. The AFS250 device was updated in the "208-Pin PQFP" table. The AFS600 device was updated in the "208-Pin PQFP" table. The AFS090, AFS250, AFS600, and AFS1500 devices were updated in the "256-Pin FBGA" table. The AFS600 and AFS1500 devices were updated in the "484-Pin FBGA" table. 2-226 2-225 2-228 2-228 2-229 N/A 3-2 3-2 3-8 3-8 3-12 3-20 Revision 2 5- 11 Datasheet Information Revision Advance v0.7 (January 2007) Changes The AFS600 device was updated in the "676-Pin FBGA" table. The AFS1500 digital I/O count was updated in the "Fusion Family" table. The AFS1500 digital I/O count was updated in the "Package I/Os: Single-/DoubleEnded (Analog)" table. Page 3-28 I II 2-30 2-38 2-40. 2-42 2-43 2-61 2-64 2-79 2-82 2-86 2-90 2-94 2-99 Advance v0.6 (October 2006) The second paragraph of the "PLL Macro" section was updated to include information about POWERDOWN. The description for bit 0 was updated in Table 2-17 · RTC Control/Status Register. 3.9 was changed to 7.8 in the "Crystal Oscillator (Xtal Osc)" section. All function descriptions in Table 2-18 · Signals for VRPSM Macro. In Table 2-19 • Flash Memory Block Pin Names, the RD[31:0] description was updated. The "RESET" section was updated. The "RESET" section was updated. Table 2-35 • FIFO was updated. The VAREF function description was updated in Table 2-36 • Analog Block Pin Description. The "Voltage Monitor" section was updated to include information about low power mode and sleep mode. The text in the "Current Monitor" section was changed from 2 mV to 1 mV. The "Gate Driver" section was updated to include information about forcing 1 V on the drain. The "Analog-to-Digital Converter Block" section was updated with the following statement: "All results are MSB justified in the ADC." The information about the ADCSTART signal was updated in the "ADC Description" section. Table 2-46 · Analog Channel Specifications was updated. Table 2-47 · ADC Characteristics in Direct Input Mode was updated. Table 2-51 • ACM Address Decode Table for Analog Quad was updated. In Table 2-53 • Analog Quad ACM Byte Assignment, the Function and Default Setting for Bit 6 in Byte 3 was updated. The "Introduction" section was updated to include information about digital inputs, outputs, and bibufs. In Table 2-69 • Fusion Pro I/O Features, the programmable delay descriptions were updated for the following features: Single-ended receiver Voltage-referenced differential receiver LVDS/LVPECL differential receiver features The "User I/O Naming Convention" section was updated to include "V" and "z" descriptions The "VCC33PMP Analog Power Supply (3.3 V)" section was updated to include information about avoiding high current draw. 2-102 2-118 2-121 2-127 2-130 2-133 2-137 2-159 2-224 5- 12 R e visio n 2 Fusion Family of Mixed Signal FPGAs Revision Advanced v0.6 (continued) Changes The "VCCNVM Flash Memory Block Power Supply (1.5 V)" section was updated to include information about avoiding high current draw. The "VMVx I/O Supply Voltage (quiet)" section was updated to include this statement: VMV and VCCI must be connected to the same power supply and VCCI pins within a given I/O bank. The "PUB Push Button" section was updated to include information about leaving the pin floating if it is not used. The "PTBASE Pass Transistor Base" section was updated to include information about leaving the pin floating if it is not used. The "PTEM Pass Transistor Emitter" section was updated to include information about leaving the pin floating if it is not used. The heading was incorrect in the "208-Pin PQFP" table. It should be AFS250 and not AFS090. Page 2-224 2-185 2-228 2-228 2-228 3-8 N/A i ii 2-36 2-53 3-12 III I I II III IV 1-1 2-58 2-57 2-61 2-64 2-35 2-43 2-45 2-46 2-48 Advance v0.5 (June 2006) The low power modes of operation were updated and clarified. The AFS1500 digital I/O count was updated in Table 1 • Fusion Family. The AFS1500 digital I/O count was updated in the "Package I/Os: Single-/DoubleEnded (Analog)" table. The "Voltage Regulator Power Supply Monitor (VRPSM)" was updated. Figure 2-45 • FlashROM Timing Diagram was updated. The "256-Pin FBGA" table for the AFS1500 is new. Advance v0.4 (April 2006) Advance v0.3 (April 2006) The G was moved in the "Product Ordering Codes" section. The "Features and Benefits" section was updated. The "Fusion Family" table was updated. The "Package I/Os: Single-/Double-Ended (Analog)" table was updated. The "Product Ordering Codes" table was updated. The "Temperature Grade Offerings" table was updated. The "General Description" section was updated to include ARM information. Figure 2-46 • FlashROM Timing Diagram was updated. The "FlashROM" section was updated. The "RESET" section was updated. The "RESET" section was updated. Figure 2-27 · Real-Time Counter System was updated. Table 2-19 • Flash Memory Block Pin Names was updated. Figure 2-33 • Flash Memory Block Diagram was updated to include AUX block information. Figure 2-34 • Flash Memory Block Organization was updated to include AUX block information. The note in the "Program Operation" section was updated. Revision 2 5- 13 Datasheet Information Revision Advance v0.3 (continued) Changes Figure 2-76 • Gate Driver Example was updated. The "Analog Quad ACM Description" section was updated. Information about the maximum pad input frequency was added to the "Gate Driver" section. Figure 2-65 • Analog Block Macro was updated. Figure 2-65 • Analog Block Macro was updated. The "Analog Quad" section was updated. The "Voltage Monitor" section was updated. The "Direct Digital Input" section was updated. The "Current Monitor" section was updated. Information about the maximum pad input frequency was added to the "Gate Driver" section. The "Temperature Monitor" section was updated. EQ 2 is new. The "ADC Description" section was updated. Figure 2-16 • Fusion Clocking Options was updated. Table 2-46 · Analog Channel Specifications was updated. The notes in Table 2-72 • Fusion Standard and Advanced I/O – Hot-Swap and 5 V Input Tolerance Capabilities were updated. The "Simultaneously Switching Outputs and PCB Layout" section is new. LVPECL and LVDS were updated in Table 2-81 • Fusion Standard and Advanced I/O Attributes vs. I/O Standard Applications. LVPECL and LVDS were updated in Table 2-82 • Fusion Pro I/O Attributes vs. I/O Standard Applications. The "Timing Model" was updated. All voltage-referenced Minimum and Maximum DC Input and Output Level tables were updated. All Timing Characteristic tables were updated Table 2-83 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions was updated. Table 2-79 • Summary of I/O Timing Characteristics – Software Default Settings was updated. Table 2-93 • I/O Output Buffer Maximum Resistances 1 was updated. The "BLVDS/M-LVDS" section is new. BLVDS and M-LVDS are two new I/O standards included in the datasheet. The "CoreMP7 and Cortex-M1 Software Tools" section is new. Table 2-83 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and Industrial Conditions was updated. Table 2-79 • Summary of I/O Timing Characteristics – Software Default Settings was updated. Page 2-95 2-130 2-94 2-81 2-81 2-84 2-86 2-89 2-90 2-94 2-96 2-103 2-102 2-20 2-118 2-144 2-149 2-157 2-158 2-161 N/A N/A 2-165 2-134 2-171 2-211 2-257 2-165 2-134 5- 14 R e visio n 2 Fusion Family of Mixed Signal FPGAs Revision Advance v0.3 (continued) Changes Table 2-93 • I/O Output Buffer Maximum Resistances was updated. The "BLVDS/M-LVDS" section is new. BLVDS and M-LVDS are two new I/O standards included in the datasheet. The "108-Pin QFN" table for the AFS090 device is new. The "180-Pin QFN" table for the AFS090 device is new. The "208-Pin PQFP" table for the AFS090 device is new. The "256-Pin FBGA" table for the AFS090 device is new. The "256-Pin FBGA" table for the AFS250 device is new. 1 Page 2-171 2-211 3-2 3-4 3-8 3-12 3-12 Revision 2 5- 15 Datasheet Information Datasheet Categories Categories In order to provide the latest information to designers, some datasheet parameters are published before data has been fully characterized from silicon devices. The data provided for a given device, as highlighted in the "Fusion Device Status" table, is designated as either "Product Brief," "Advance," "Preliminary," or "Production." The definitions of these categories are as follows: Product Brief The product brief is a summarized version of a datasheet (advance or production) and contains general product information. This document gives an overview of specific device and family information. Advance This version contains initial estimated information based on simulation, other products, devices, or speed grades. This information can be used as estimates, but not for production. This label only applies to the DC and Switching Characteristics chapter of the datasheet and will only be used when the data has not been fully characterized. Preliminary The datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. Production This version contains information that is considered to be final. Export Administration Regulations (EAR) The products described in this document are subject to the Export Administration Regulations (EAR). They could require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. Safety Critical, Life Support, and High-Reliability Applications Policy The products described in this advance status document may not have completed the Microsemi qualification process. Products may be amended or enhanced during the product introduction and qualification process, resulting in changes in device functionality or performance. It is the responsibility of each customer to ensure the fitness of any product (but especially a new product) for a particular purpose, including appropriateness for safety-critical, life-support, and other high-reliability applications. Consult the Microsemi SoC Products Group Terms and Conditions for specific liability exclusions relating to life-support applications. A reliability report covering all of the SoC Products Group’s products is available at http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi also offers a variety of enhanced qualification and lot acceptance screening procedures. Contact your local sales office for additional reliability information. 5- 16 R e visio n 2 Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 © 2012 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 51700092-2/3.12