APL502L

APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). T-MaxTM TO-264 D • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Higher FBSOA G S All Ratings: TC = 25°C unless otherwise specified. APL502B2_L (G) UNIT Volts Amps 500 58 232 ±30 ±40 730 5.84 -55 to 150 300 58 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 58 0.09 25 250 ±100 2 4 (VDS > I D(ON) x RDS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 29A) Ohms μA nA 2-2010 050-5896 Rev E Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 250V ID = 29A @ 25°C RG = 0.6W MIN TYP APL502B2_L(G) MAX UNIT 7485 1290 617 13 27 56 16 9000 1810 930 26 54 84 20 ns pF THERMAL CHARACTERISTICS Symbol Characteristic RqJC WT Junction to Case Package Weight MIN TYP MAX UNIT °C/W oz g .17 0.22 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% 3 4 See MIL-STD-750 Method 3471 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.16 ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.12 0.10 0.5 0.08 0.06 0.04 0.02 0 10 -5 D = 0.9 0.7 0.3 0.1 0.05 10 -4 SINGLE PULSE 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5896 Rev E 2-2010 Typical Performance Curves 120 100 8V 80 7.5 V 60 40 20 0 7V 6.5 V 6V 5.5 V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 80 ID, DRAIN CURRENT (AMPERES) (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @