APT100DL60BG

APT100DL60B(G) APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) TO - 24 PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber 1 2 7 D3PAK 1 2 (S) 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL All Ratings: TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current 1 600 Volts (TC = 124°C, Duty Cycle = 0.5) 100 131 600 -55 to 175 °C 300 Amps RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 25°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C 97 Min Typ 1.25 2.0 1.28 Max 1.6 Unit Volts 25 250 pF 052-6318 Rev B 6 - 2009 μA Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM APT100DL60B_S(G) Min Typ 110 ns 487 IF = 100A, diF/dt = -200A/ μs VR = 400V, TC = 25°C 2328 11 716 IF = 100A, diF/dt = -200A/μs VR = 400V, TC = 125°C 5954 18 333 IF = 100A, diF/dt = -1000A/ μs VR = 400V, TC = 125°C 10002 49 nC Amps ns nC Amps ns nC Amps Characteristic / Test Conditions Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Min Typ Max 0.34 Unit °C/W oz g 0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 1 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.40 ZθJC, THERMAL IMPEDANCE (°C/W) 0.35 0.30 0.25 0.20 Note: lb·in N·m PDM 0.15 0.10 0.05 0 10-5 10-4 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6318 Rev B 6 - 2009 TYPICAL PERFORMANCE CURVES 250 225 200 IF, FORWARD CURRENT (A) 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 1000 TJ= 125°C TJ= 55°C TJ= 25°C TJ= 150°C trr, COLLECTOR CURRENT (A) APT100DL60B_S(G) T = 125°C J V = 400V R 800 100A 50A 600 200A 400 200 0 0 200 400 600 800 1000 Qrr, REVERSE RECOVERY CHARGE (nC) VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 14000 T = 125°C 200A J 12000 10000 8000 6000 4000 2000 0 50A V = 400V R -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 IRRM, REVERSE RECOVERY CURRENT (A) 60 50 40 30 20 10 0 50A 100A T = 125°C J V = 400V R 200A 100A 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1. 2 1.0 0.5 0.4 QRR 0.3 0.2 0 tRR 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 400 350 300 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) IRRM 250 200 150 100 50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1000 CJ, JUNCTION CAPACITANCE (pF) 75 100 125 150 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 0 25 50 900 800 700 600 500 052-6318 Rev B 6 - 2009 400 300 200 100 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage Vr +18V 0V D.U.T. diF /dt Adjust APT100DL60B_S(G) trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 0.25 IRRM Slope = diM/dt trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e1 100% Sn 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535) 3 Cathode (Heat Sink) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 19.81 (.780) 20.32 (.800) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 052-6318 Rev B 6 - 2009 Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.