APT100GF60JU3

APT100GF60JU3 ISOTOP® Buck chopper NPT IGBT C VCES = 600V IC = 100A @ Tc = 80°C G Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features E • Non Punch Through (NPT) THUNDERBOLT IGBT ® A E G C A • • • - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration ISOTOP Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C 30 39 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-9 APT100GF60JU3– Rev 1 June, 2006 Max ratings 600 120 100 320 ±20 416 Unit V A V W APT100GF60JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0 V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 1 mA VGE = ±20V, VCE = 0 V Min Typ Max 100 1000 2.5 5 ±150 Unit µA V V nA 2.0 2.2 3 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 100A Resistive Switching (25°C) VGE = 15V VBus = 400V IC = 100A R G = 5Ω Min Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 Max Unit pF nC ns mJ Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 100A R G = 5Ω ns mJ www.microsemi.com 2-9 APT100GF60JU3– Rev 1 June, 2006 APT100GF60JU3 Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol