APT100GN120B2

TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. G C E T-Max ® ® • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C 8 8 All Ratings: TC = 25°C unless otherwise specified. APT100GN120B2 UNIT Volts 1200 ±30 245 100 300 300A @ 1200V 960 -55 to 150 300 Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 4mA, Tj = 25°C) MIN TYP MAX Units 1200 5.0 1.4 5.8 1.7 2.0 100 2 6.5 2.1 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 µA nA Ω 12-2007 050-7626 Rev A Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor TBD 600 7.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT100GN120B2 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 100A TJ = 150°C, R G = 4.3Ω 7, VGE = 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V I C = 100A 4 5 MIN TYP MAX UNIT 6500 365 280 9.5 540 50 295 300 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 mJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy RG = 1.0Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 6 mJ Inductive Switching (125°C) VCC = 800V VGE = 15V I C = 100A RG = 1.0Ω 7 55 Turn-on Switching Energy (Diode) Turn-off Switching Energy 66 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .13 N/A 6.1 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 12-2007 Rev A 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous Current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7626 TYPICAL PERFORMANCE CURVES 300 300 V GE APT100GN120B2 15V 13V IC, COLLECTOR CURRENT (A) 250 12V = 15V IC, COLLECTOR CURRENT (A) 250 TJ = -55°C TJ = 25°C 200 TJ = 125°C 150 TJ = 175°C 100 200 11V 150 10V 9V 8V 7V 100 50 0 50 0 0 1.0 2.0 3.0 4.0 5.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST