APT100GT120JRDL

1200V APT100GT120JRDL Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode • SSOA Rated • RoHS Compliant Typical Applications • Induction Heating ISOTOP ® E G C E S OT 22 7 "UL Recognized" file # E145592 • Welding • Medical • High Power Telecom G C • Resonant Mode Phase Shifted Bridge E Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT100GT120JRDL 1200 ±20 123 67 200 200A @ 1200V 570 -55 to 150 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor 2 Min 1200 4.5 2.7 - Typ 5.5 3.2 4.0 5 Max 6.5 3.7 300 1500 600 - Unit Volts Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 μA nA Ω 052-6351 Rev B 6-2009 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy 4 5 APT100GT120JRDL Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 100A TJ = 150°C, RG = 1.0Ω , VGE = 15V, L = 100μH, VCE= 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V IC = 100A RG = 4.7Ω TJ = +25°C 7 Min 200 - Typ 6700 6530 4380 10.0 685 75 400 Max - Unit pF V nC A 50 100 630 36 TBD 17600 7240 50 100 710 37 TBD 22380 10950 μJ ns μJ ns Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy 4 5 6 Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 100A RG = 4.7Ω TJ = 125°C - Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions R R θJC θJC Min 2500 Typ 29.2 - Max 0.22 Unit °C/W Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 0.80 g Volts WT VIsolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6351 Rev B 6-2009 Typical Performance Curves 150 125 TJ= 25°C 100 TJ= 125°C 75 50 25 0 TJ= 150°C V GE APT100GT120JRDL 250 15V 13V 12V IC, COLLECTOR CURRENT (A) 200 11V 150 10V 100 9V 50 8V 7V = 15V IC, COLLECTOR CURRENT (A) 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST