APT100GT60B2R

APT100GT60B2R(G) APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant G E • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current G C E G C E C Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified. Ratings 600 Volts ±30 148 80 300 300A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 1.5mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±30V) Min 600 3 1.7 - Typ 4 2.1 2.5 - Max 5 Unit Volts 2.5 25 μA 300 nA 052-6297 Rev A 7 - 2008 ICES IGES 1000 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT100GT60B2R_LR(G) Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 100A TJ = 150°C, RG = 4.3Ω , VGE = 15V, L = 100μH, VCE= 600V Inductive Switching (25°C) VCC = 400V VGE = 15V 4 5 Min 300 - Typ 5150 475 295 8.0 460 40 210 Max - Unit pF V Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy nC A 40 75 320 100 3250 3525 3125 40 75 350 100 3275 4650 3750 μJ ns μJ ns IC = 100A RG = 4.3Ω TJ = +25°C Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy 4 5 Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 100A RG = 4.3Ω TJ = +125°C - Turn-Off Switching Energy 6 Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions RθJC RθJC WT Torque Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws Min - Typ 29.2 - Max 0.25 Unit °C/W N/A 10 1.1 g in·lbf N·m 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. 052-6297 Rev A 7 - 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 200 V GE APT100GT60B2R_LR(G) 300 12, 13, &15V 10V IC, COLLECTOR CURRENT (A) 250 9V 200 8V = 15V 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST