APT100S20LCT

1 2 3 TO 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 -26 4 APT100S20LCT 200V 120A 1 2 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS • Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-264 Package • Rugged Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density • Low Forward Voltage • High Blocking Voltage • Low Leakage Current MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL EVAL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current 1 All Ratings Are Per Leg: TC = 25°C unless otherwise specified. APT100S20LCT UNIT 200 Volts (TC = 125°C, Duty Cycle = 0.5) 1 120 318 1000 -55 to 150 300 100 °C mJ Amps RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 50mH) STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com MIN TYP MAX UNIT .89 1.06 .76 .95 Volts VR = VR Rated VR = VR Rated, TJ = 125°C 2 40 470 053-6025 Rev D pF 5-2006 mA DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -700A/µs VR = 133V, TC = 125°C IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 125°C Test Conditions IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 25°C MIN TYP APT100S20LCT MAX UNIT ns nC 70 230 6 110 690 11 95 1750 32 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .18 0.22 5.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1 Countinous current limited by package lead temperature. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 D = 0.9 0.7 0.5 0.3 Note: PDM t1 t2 0.1 0.05 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) 0.00817 0.0174 0.0593 TC ( C) 0.095 5-2006 Dissipated Power (Watts) 0.00514 0.00242 0.0158 0.384 053-6025 Rev D ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 360 300 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 TJ = 125°C VR = 133V APT100S20LCT 100A 130A 50A 240 180 120 TJ = 125°C 60 0 TJ = 150°C TJ = -55°C TJ = 25°C 0 0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 35 30 25 20 15 10 5 0 50A 100A TJ = 125°C VR = 133V 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 2000 130A 100A 130A 1500 1000 50A 500 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 t rr I RRM IF(AV) (A) 0 0 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 400 Duty cycle = 0.5 TJ = 150°C Qrr t rr 300 Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) Qrr 200 Lead Temperature Limited 100 0.2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 6000 5000 4000 3000 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 CJ, JUNCTION CAPACITANCE (pF) 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 053-6025 Rev D 1000 5-2006 2000 APT100S20LCT Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT20M20LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Common Cathode 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 5-2006 Anode 1 Common Cathode Anode 2 053-6025 Rev D 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.