APT102GA60L

APT102GA60B2 APT102GA60L 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. APT102GA60B2 APT102GA60L Single die IGBT FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Pulsed Collector Current 2 Gate-Emitter Voltage 3 1 Ratings 600 183 102 307 ±30 780 307A @ 600V -55 to 150 300 Unit V Continuous Collector Current @ TC = 100°C A V W Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 250μA VGE = 15V, IC = 62A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 1000 5000 ±100 Unit V VGE =VCE , IC = 1mA μA nA 052-6329 Rev B 2 - 2009 VGS = ±30V Thermal and Mechanical Characteristics Symbol RθJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Min - Typ 5.9 Max 0.16 - Unit °C/W g in·lbf 10 Dynamic Characteristics Symbol Cies Coes Cres Qg4 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff7 td(on tr td(off) tf Eon2 Eoff7 TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 62A TJ = 150°C, RG = 4.7Ω5, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25°C) IGBT and Diode APT102GA60B2_L Min Typ 8170 630 78 294 56 106 307 28 37 212 101 1354 1614 27 37 247 142 2106 1852 μJ ns μJ ns nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit A VCC = 400V VGE = 15V IC = 62A RG = 4.7Ω5 TJ = +25°C Inductive Switching (125°C) IGBT and Diode VCC = 400V VGE = 15V IC = 62A RG = 4.7Ω5 TJ = +125°C 1 Continuous current limited by package lead temperature. 2 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 See Mil-Std-750 Method 3471. 5 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 6 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6329 Rev B 2 - 2009 Typical Performance Curves 150 125 TJ= 125°C 100 TJ= 25°C 75 50 25 0 TJ= 150°C V GE APT102GA60B2_L 350 15V 13V 11V 300 IC, COLLECTOR CURRENT (A) 250 200 150 100 50 0 9V = 15V TJ= 55°C IC, COLLECTOR CURRENT (A) 10V 8V 7V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 62A C T = 25°C J 400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST