APT10DC60HJ

APT10DC60HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 600V IC = 10A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration • • • + ~ ISOTOP® Benefits • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs Max ratings 600 TC = 100°C TC = 25°C 10 250 Unit V A APT10DC60HJ – Rev 0 November, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT10DC60HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions IF = 10A Tj = 25°C Tj = 175°C Tj = 25°C VR = 600V Tj = 175°C IF = 10A, VR = 300V di/dt =500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.0 50 100 14 65 50 Max 1.8 2.4 200 1000 Unit V µA nC pF Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol