APT10SCE120B

APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems • Popular TO-247 Package • Power Factor Correction (PFC) • Low Forward Voltage • Minimizes or eliminates snubber TO -2 4 7 D 3 PAK 1 2 • Low Leakage Current 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions Unit 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF Ratings Maximum D.C. Forward Current TC = 25°C 43 TC = 163°C 10 IFRM Repetitive Peak Forward Surge Current (TC = 25°C, tp = 10ms, Half Sine Wave) 50 IFSM Non-Repetitive Forward Surge Current (TC = 25°C, tp = 10ms, Half Sine) 110 Ptot Power Dissipation TJ, TSTG TL TC = 25°C 167 TC = 110°C 72 Operating and Storage Junction Temperature Range Amps W -55 to 175 Lead Temperature for 10 Seconds °C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Min Typ Max IF = 10A TJ = 25°C 1.5 1.8 IF = 10A, TJ = 175°C 2.3 VR = 1200V TJ = 25°C 10 VR = 1200V, TJ = 175°C 500 VF Forward Voltage IRM Maximum Reverse Leakage Current Qc Total Capactive Charge VR = 600V, IF = 10A, di/dt = -500A/µs, TJ = 25°C 120 Junction Capacitance VR = 1V, TJ = 25°C, f = 1MHz 630 Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz 115 Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz 85 CT Microsemi Website - http://www.microsemi.com 200 Unit Volts µA nC pF 050-7705 Rev B 6 - 2014 Symbol APT10SCE120B THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Package Weight Torque Max Unit 0.9 °C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb·in 1.1 N·m Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES D = 0.9 0.8 0.7 0.6 0.5 0.4 Note: 0.3 t2 0.2 0 t 0.1 0.05 10 -5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10 10-3 -4 10-2 TJ = -55°C 1 45 TJ = 25°C 40 35 15 30 TJ = 125°C 10 TJ = 175°C 5 IF(peak) (A) IF, FORWARD CURRENT (A) 0.1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 20 25 20 15 10 5 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 050-7705 Rev B 6 - 2014 t1 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 1 0 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 3, Maximum Forward Current vs. Case Temperature APT10SCE120B TYPICAL PERFORMANCE CURVES 500 IR, REVERSE LEAKAGE CURRENT (μA) 180 160 140 120 80 60 40 20 0 25 50 75 100 125 150 400 350 300 250 200 150 25°C 0 400 600 800 1000 1200 1400 VR, REVERSE VOLTAGE (V) Figure 5. Reverse Leakage Currents vs. Reverse Voltage 175 160 0 200 700 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 0 200 400 600 800 VR, REVERSE VOLTAGE (V) Figure 6. Reverse Recovery Charge vs. VR 600 500 400 300 200 100 0 1000 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (V) Figure 7. Junction Capacitance vs. Reverse Voltage 0 100 TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) Cathode Qrr, REVERSE RECOVERY CHARGE (nC) 75°C 50 CASE TEMPERATURE (°C) Figure 4. Maximum Power Dissipation vs. Case Temperature 0 125°C 100 3.50 (.138) 3.81 (.150) 4.50 (.177) Max . 0.40 (.016) 1.016(.040) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 050-7705 Rev B 6 - 2014 P (w) total 100 175°C 450 APT10SCE120B Disclaimer: 050-7705 Rev B 6 - 2014 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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