APT10SCE170B

APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems • Popular TO-247 Package • Power Factor Correction (PFC) • Low Forward Voltage • Minimizes or eliminates snubber TO -2 4 7 D 3 PAK 1 2 • Low Leakage Current 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IFSM Ptot TJ, TSTG TL Unit 1700 Volts Maximum D.C. Reverse Voltage VRRM IF Ratings Maximum D.C. Forward Current Non-Repetitive Forward Surge Current ( tp = 10ms, Half Sine) Power Dissipation TC = 25°C 23 TC = 110°C 15 TC = 25°C 55 TC = 110°C 50 TC = 25°C 214 TC = 110°C 92 Operating and Storage Junction Temperature Range Amps W -55 to 175 Lead Temperature for 10 Seconds °C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Min Typ Max IF = 10A TJ = 25°C 1.5 1.8 IF = 10A, TJ = 175°C 2.25 VF Forward Voltage IRM Maximum Reverse Leakage Current Qc Total Capactive Charge VR = 800V, IF = 10A, di/dt = -500A/µs, TJ = 25°C VR = 1700V TJ = 25°C 10 VR = 1700V, TJ = 175°C 500 Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz CT 88 Volts µA nC 1120 Junction Capacitance VR = 300V, TJ = 25°C, f = 1MHz 93 Junction Capacitance VR = 600V, TJ = 25°C, f = 1MHz 68 Microsemi Website - http://www.microsemi.com 200 Unit pF 050-7712 Rev A 3-2014 Symbol APT10SCE170B THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Package Weight Torque Max Unit 0.7 °C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb·in 1.1 N·m Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES ZθJC, THERMAL IMPEDANCE (°C/W) 0. 8 0. 7 D = 0.9 0. 6 0.7 0. 5 0. 4 0.5 Note: 0.3 0. 2 t1 t2 0. 1 0 P DM 0. 3 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 SINGLE PULSE 10-3 0.1 1 10 10-2 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10 10 -5 -4 25 20 TJ = -55°C TJ = 25°C IF(peak) (A) IF, FORWARD CURRENT (A) 20 15 10 TJ = 125°C TJ = 175°C 5 0 10 5 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 050-7712 Rev A 3-2014 15 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 3, Maximum Forward Current vs. Case Temperature APT10SCE170B TYPICAL PERFORMANCE CURVES 350 IR, REVERSE LEAKAGE CURRENT (μA) 250 200 100 50 0 200 150 125°C 100 75°C 50 25°C 200 400 600 800 1000 1200 1400 1600 1800 VR, REVERSE VOLTAGE (V) Figure 5. Reverse Leakage Currents vs. Reverse Voltage 25 160 0 1200 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 0 300 600 900 VR, REVERSE VOLTAGE (V) Figure 6. Reverse Recovery Charge vs. VR 1000 800 600 400 200 0 1200 1500 1800 0 200 400 600 800 1000 1200 1400 1600 1800 VR, REVERSE VOLTAGE (V) Figure 7. Junction Capacitance vs. Reverse Voltage TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) Cathode Qrr, REVERSE RECOVERY CHARGE (nC) 250 0 50 75 100 125 150 175 CASE TEMPERATURE (°C) Figure 4. Maximum Power Dissipation vs. Case Temperature 0 300 3.50 (.138) 3.81 (.150) 4.50 (.177) Max . 0.40 (.016) 1.016(.040) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 050-7712 Rev A 3-2014 P (w) total 150 175°C APT10SCE170B Disclaimer: 050-7712 Rev A 3-2014 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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