APT11F80S

APT11F80B APT11F80S 600V, 12A, 0.9Ω Max trr ≤210ns N-Channel FREDFET POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT11F80B APT11F80S D Single die FREDFET G S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 12 8 46 ±30 524 6 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 337 0.37 Unit W °C/W °C oz g in·lbf N·m 04-2009 050-8170 Rev B Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 6A VGS = VDS, ID = 1mA VDS = 533V VGS = 0V TJ = 25°C TJ = 125°C APT11F80B_S Typ 0.87 0.65 4 -10 Max Unit V V/°C Ω V mV/°C μA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.9 5 250 1000 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 6A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 11 2471 42 246 116 Max Unit S pF VGS = 0V, VDS = 0V to 400V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 6A, VDS = 400V Resistive Switching VDD = 400V, ID = 6A RG = 4.7Ω 6 , VGG = 15V 58 80 13 41 14 20 61 18 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 12 Unit G S A 46 1.0 210 360 V ns μC A 25 V/ns ISD = 6A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 6A 3 diSD/dt = 100A/μs VDD = 100V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 6A, di/dt ≤1000A/μs, VDD = 400V, TJ = 125°C 181 300 0.71 1.61 8.3 11.9 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 29.1mH, RG = 25Ω, IAS = 6A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. Rev B 04-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8170 APT11F80B_S 30 25 ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A) TJ = 25°C V GS = 10V 16 T = 125°C TJ = -55°C J V V 14 12 10 8 6 4 2 GS GS = 10, & 15V = 6, & 6.5V 5.5V 20 15 10 TJ = 125°C 5V 5 0 TJ = 150°C 4.5V 4V 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics NORMALIZED TO VGS = 10V @ 6A 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 45 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 0 VDS> ID(ON) x RDS(ON) MAX. 250 μSEC. PULSE TEST @