APT1204R7BFLL

APT1204R7BFLL APT1204R7SFLL POWER MOS 7 ® 1200V 3.5A 4.700Ω D3PAK TO-247 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified. APT1204R7B_SFLL UNIT Volts Amps 1200 3.5 14 ±30 ±40 135 1.08 -55 to 150 300 3.5 10 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 425 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1200 4.70 250 1000 ±100 3 5 (VGS = 10V, ID = 1.75A) Ohms µA nA Volts 7-2006 050-7390 Rev B Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT1204R7B_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 3.5A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 3.5A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 800V, VGS = 15V ID = 3.5A, RG = 4.3Ω ID = 3.5A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 715 130 36 31 4 21 7 2 20 24 115 23 135 25 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 3.5 14 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -ID 3.5A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID 3.5A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 3.5A, di/dt = 100A/µs) Peak Recovery Current (IS = -ID 3.5A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 250 515 0.5 1.1 8.3 11.5 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.90 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 1.0 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 69.39mH, RG = 25Ω, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID3.5A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.80 0.9 0.7 0.60 0.5 0.40 0.3 0.20 0.1 0 0.05 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-7390 Rev B 7-2006 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 8 7 6 5 4 3 2 1 0 APT1204R7 B_SFLL VGS =15,10 & 8V 7V 6.5V TJ ( C) 0.386 Dissipated Power (Watts) 0.00336 0.0903 TC ( C) 0.508 ZEXT 6V ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 5.5V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V NORMALIZED TO = 10V @ 1.75A 10 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @