APT12067B2LLG

APT12057B2LL(G) APT12057LLL(G) 1200V 22A 0.570Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 MOSFET B2LL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg T-MAX™ TO-264 LLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT12057(G) Parameter UNIT 1200 Drain-Source Voltage Volts 22 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C VGSM PD TJ,TSTG 88 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 22 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 mJ 4 3000 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 1200 Volts 22 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.570 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 050-7082 Rev B 8-2002 Symbol APT12057 B2LL - LLL(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 5155 6200 Coss Output Capacitance VDS = 25V 770 1080 Crss Reverse Transfer Capacitance f = 1 MHz 130 200 Qg Total Gate Charge VGS = 10V 187 290 Qgs Gate-Source Charge VDD = 0.5 VDSS 24 29 Qgd Gate-Drain ("Miller") Charge ID = ID[Cont.] @ 25°C 120 180 td(on) Turn-on Delay Time tr 3 VGS = 15V 11 22 VDD = 0.5 VDSS 20 40 ID = ID[Cont.] @ 25°C 36 54 RG = 0.6Ω 21 30 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN 22 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 88 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs) dv/ Peak Diode Recovery dt UNIT Amps Volts 1291 ns 29 µC dv/ 5 dt 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 12.40mH, R = 25Ω, Peak I = 22A temperature. j G L 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID[Cont.] di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7082 Rev B 8-2002 0.2 t1 t2 0.01 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 APT12057 B2LL - LLL(G) Typical Performance Curves 50 VGS =15,10 & 8V Graph Deleted ID, DRAIN CURRENT (AMPERES) 45 40 7V 35 6.5V 30 25 6V 20 15 5.5V 10 5 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 70 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @