APT130SM70B

PRELIMINARY APT130SM70B 700V, 110A, 35mΩ Package APT130SM70B Silicon Carbide N-Channel Power MOSFET TO -24 7 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: SiC MOSFET Benefits: • High efficiency to enable lighter/compact system • Low on-resistance virtually independent on the ambient temperature Applications: • PV inverter, converter and industrial motor drives • Low capacitances and low gate charge • Simple to drive and easy to parallel • Smart grid transmission & distribution • Fast switching speed due to low internal gate resistance (ESR) • Improved thermal capabilities and lower switching losses • Induction heating, and welding • Stable operation at high junction temperature, Tj(max) = +175C • Eliminates the need of external Free Wheeling Diode • Power supply and distribution • Fast and reliable body diode • Lower system cost of ownership • H/EV powertrain and EV charger • Superior avalanche ruggedness MAXIMUM RATINGS Symbol Ratings Unit Drain Source Voltage 700 V Continuous Drain Current @ TC = 25°C 110 Continuous Drain Current @ TC = 100°C 78 IDM Pulsed Drain Current 262 VGS Gate-Source Voltage VDSS ID PD Parameter 1 A -10 to +25 V Total Power Dissipation @ TC = 25°C 556 W Linear Derating Factor 3.7 W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Characteristic Min Junction to Case Thermal Resistance Typ Max Unit 0.22 0.27 °C/W Operating Junction Temperature -55 175 Tstg Storage Junction Temperature Range -55 150 TL Soldering Temperature for 10 Seconds (1.6mm from case) Tj Torque 050-7720 Rev B 10/2016 Mounting Torque (TO-247 Package), 6-32 or M3 screw °C 260 10 in·lbf 1.1 N·m 1 PRELIMINARY APT130SM70B STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA 700 RDS(on) Drain-Source On Resistance 2 VGS = 20V, ID = 60A VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Threshold Voltage Temperature Coefficient VGS = VDS, ID = 1mA VDS = 700V VGS = 0V Typ 45 V -5.10 mV/°C 100 TJ = 150°C 250 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current VGS = +20V / -10V ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short mΩ 2.4 TJ = 25°C IDSS Unit V 35 1.7 Max ±100 0.46 µA nA Ω TJ = 25°C unless otherwise specified DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Qg Total Gate Charge VGS = 0/20V 220 VDD= 466V 42 ID = 60A 61 50 f = 1MHz Gate-Source Charge Gate-Drain Charge td(on) Turn-On Delay Time VDD = 466V 17 Current Rise Time VGS = 0/20V 15 Turn-Off Delay Time tf Current Fall Time Eon2 Turn-On Switching Energy 4 Eoff Turn-Off Switching Energy td(on) tr td(off) tf ID = 60A 1060 Tc = 25°C Turn-On Delay Time VDD = 466V 16 Current Rise Time VGS = 0/20V 15 Current Fall Time Turn-On Switching Energy 4 Eoff Turn-Off Switching Energy Source-Drain Diode Characteristics Symbol ns 19 L = 115 µH 305 Eon2 nC 36 RG = 3.0Ω 3 Freewheeling Diode = APT20SCE65B Turn-Off Delay Time pF 465 Qgs td(off) Unit 3950 VGS = 0V, VDD = 700V Qgd tr Max ID = 60A µJ ns 39 RG = 3.0 Ω 3 21 L = 115 µH 965 Tc = 150°C µJ 345 Freewheeling Diode = APT20SCE65B Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Test Conditions ISD = 60A, VGS = 0V ISD = 60A, VDD = 466V dI/dt = -1000A/µs Min Typ Max Unit 3.85 V 68 ns 570 nC 15.3 A TJ = 25°C unless otherwise specified 1 2 3 4 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature Pulse test: Pulse Width < 380µs, duty cycle < 2%. RG is total gate resistance including internal gate driver impedance. Eon2 includes energy of APT20SCE65B free wheeling diode. 050-7720 Rev B 10/2016 2 PRELIMINARY APT130SM70B 200 200 V TJ= 125°C / 150˚C 160 TJ= 175°C 140 120 TJ= 25°C 100 80 60 40 120 100 14V 80 60 12V 40 10V 8V 20 0 2 4 6 8 10 0 12 0 180 160 200 T = 150°C 120 100 12V 80 60 10V 40 0 2 4 6 8 J 14V 12V 80 10V 60 40 8V 20 0 6V 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 4, Output Characteristics 20 NORMALIZED TO VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25°C) T = 175°C 100 10 12 14 16 18 20 VGS = 20V @ 60A 1.4 1.2 1 0.8 0.6 0.4 0.2 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 5, RDS(on) vs Junction Temperature 050-7720 Rev B 10/2016 16V 120 2 1.6 10 12 14 16 18 20 140 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 3, Output Characteristics 1.8 8 18V 160 8V 6V 20 6 20V 180 J 14V 18V 140 4 IGS= 1mA IDS= 60A VDS= 466V QGD 15 QGS 400 VDS 300 VGS 10 200 5 100 QG 0 0 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 16V 20V ID, DRAIN CURRENT (A) 200 2 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 16V 20V 140 20 0 J 160 TJ= 75°C 18V T = 25°C 180 ID, DRAIN CURRENT (A) 180 ID, DRAIN CURRENT (A) = 20V GS 240 QG, GATE CHARGE (nC) Figure 6, Gate Charge Characteristics 3 PRELIMINARY APT130SM70B Ciss 1000 Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 100 700 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7, Capacitance vs Drain-to-Source Voltage 0 IDS, REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) 10000 -5 VGS -4 VGS −15 −25 −30 -3 VGS -2 VGS -1 VGS 0 VGS −35 IDS, REVERSE DRAIN CURRENT (A) IDS, REVERSE DRAIN CURRENT (A) −20 -1 VGS −25 0 VGS −30 −35 −6 −5 −4 −3 −2 −1 0 T = 150°C −6 −5 −4 −3 −2 −1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction −5 J -5 VGS −10 -4 VGS −15 -3 VGS −20 -2 VGS −25 -1 VGS −30 0 VGS −35 −40 −6 −5 −4 −3 −2 −1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction 1.6 I = 1mA (NORMALIZED TO 25°C) D VGS(th), THRESHOLD VOLTAGE (V) 1.1 (NORMALIZED TO 25°C) -2 VGS 0 −40 V(BR)DSS, BREAKDOWN VOLTAGE (V) -3 VGS −15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 8, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction J −20 -5 VGS -4 VGS T = 125°C −10 1.05 1 0.95 0.9 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 11, Breakdown Voltage vs Temperature 050-7720 Rev B 10/2016 J −10 −40 0 −5 T = 25°C −5 1.4 I = 1mA D 1.2 1 0.8 0.6 0.4 0.2 0 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Threshold Voltage vs Temperature 4 PRELIMINARY APT130SM70B ID, DRAIN CURRENT (A) 1000 100 10 RDS(on) 10µs 100µs 1ms 1 T = 175°C 10ms 100ms/DC J T = 100°C C 0.1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13, Forward Safe Operating Area D = 0.9 0.25 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 t1 t2 0 10 -5 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-4 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 14, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Drai n Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) 050-7720 Rev B 10/2016 5 PRELIMINARY Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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Products include high-performance and radiation-hardened analog mixedsignal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet Solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: sales.support@microsemi.com www.microsemi.com 050-7720 Rev B 10/2016 ©2016 Microsemi Corporation. All rights reserved. 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