APT13GP120KG

APT13GP120K 1200V POWER MOS 7 IGBT ® A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. • Low Conduction Loss • 100 kHz operation @ 600V, 10A • Low Gate Charge • 50 kHz operation @ 600V, 16A • Ultrafast Tail Current shutoff • RBSOA Rated MAXIMUM RATINGS Symbol TO-220 G C C E G E All Ratings: TC = 25°C unless otherwise specified. Parameter APT13GP120K VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM I C1 Continuous Collector Current @ TC = 25°C 41 I C2 Continuous Collector Current @ TC = 110°C 20 I CM Pulsed Collector Current RBSOA PD TJ,TSTG TL 1 UNIT Volts Amps 50 @ TC = 150°C 50A @ 960V Reverse Bias Safe Operating Area @ TJ = 150°C 250 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) 3.3 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) 3.0 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES 1200 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) UNIT 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts nA 2-2004 BVCES MIN 050-7415 Rev B Symbol APT13GP120K DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 1145 VGE = 0V, VCE = 25V 90 Reverse Transfer Capacitance f = 1 MHz 15 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 VCE = 600V 8 I C = 13A 26 Input Capacitance Coes Output Capacitance Cres VGEP Qge Qgc RBSOA TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V 55 nC 50 A 15V, L = 100µH,VCE = 960V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time I C = 13A 4 Turn-on Switching Energy (Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon1 Eon2 Eoff 330 9 12 VGE = 15V 70 I C = 13A Current Fall Time 5 ns 200 R G = 5Ω 4 Turn-on Switching Energy (Diode) µJ 165 Inductive Switching (125°C) VCC = 600V Turn-off Delay Time Turn-off Switching Energy 114 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy ns 34 R G = 5Ω Eon2 tf 28 Current Fall Time Turn-on Switching Energy td(off) 12 VGE = 15V Turn-off Delay Time Eon1 tr 9 Inductive Switching (25°C) VCC = 600V 223 TJ = +125°C 710 6 µJ 840 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .50 RΘJC Junction to Case (DIODE) N/A Package Weight 1.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7415 Rev B 2-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES VGE = 15V. 250µs PULSE TEST