APT14050JVFR

APT14050JVFR 23A 0.500Ω Ω 1400V POWER MOS V ® S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Fast Recovery Body Diode • Avalanche Energy Rated • Lower Leakage • Popular SOT-227 Package D G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT14050JVFR UNIT 1400 Volts Drain-Source Voltage 23 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 92 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 23 (Repetitive and Non-Repetitive) 1 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1400 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 11.5A) TYP MAX UNIT Volts 0.500 Ohms Zero Gate Voltage Drain Current (VDS = 1400V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 1120V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 4-2004 Characteristic / Test Conditions 050-7259 Rev A Symbol APT14050JVFR DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 13500 Coss Output Capacitance VDS = 25V 1150 Reverse Transfer Capacitance f = 1 MHz 600 VGS = 10V 820 VDD = 700V ID = 23A @ 25°C 55 375 VGS = 15V 20 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) 3 Turn-on Delay Time tr VDD = 700V 18 ID = 23A @ 25°C 110 RG = 0.6Ω 20 Rise Time t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX 23 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 92 VSD Diode Forward Voltage 2 (VGS = 0V, IS = ID -23A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 5 t rr Reverse Recovery Time (IS = -ID 23A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID 23A, di/dt = 100A/µs) Tj = 25°C 1.8 Tj = 125°C 7.4 IRRM Peak Recovery Current (IS = -ID 23A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 30 Amps ns µC Amps THERMAL/ PACKAGE CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.18 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 2500 10 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 4-2004 050-7259 Rev A 0.9 0.3 0 t1 t2 0.04 0.1 10-5 SINGLE PULSE 10-4 lb•in 4 Starting Tj = +25°C, L = 13.61mH, RG = 25Ω, Peak IL = 23A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID23A di/dt ≤ 700A/µs VR ≤ 1400 TJ ≤ 150°C 0.20 0.05 °C/W Volts APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT14050JVFR 60 Junction temp. (°C) 0.0262 Power (watts) 0.133 0.0219 0.0330F 0.760F 36.6F ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V RC MODEL Case temperature. (°C) 80 60 TJ = -55°C TJ = +25°C TJ = +125°C 20 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 4.5V 10 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 D 2.5 1.10 1.05 1.00 0.95 0.90 = 11.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ 11.5A GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 ID, DRAIN CURRENT (AMPERES) 20 0 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 20 1.15 25 3.0 30 050-7259 Rev A 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @