APT150DL60B2G

APT150DL60B2(G) 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber 1 (B2) T-M ax ® 2 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL All Ratings: TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current 1 600 Volts (TC = 112°C, Duty Cycle = 0.5) 150 450 600 -55 to 175 °C 300 Amps RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 150A VF Forward Voltage IF = 300A IF = 150A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C 139 Min Typ 1.25 2.0 1.25 Max 1.6 Unit Volts 25 250 pF 052-6319 Rev B 12 - 2008 μA Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM APT150DL60B2(G) Min Typ 51 ns 408 IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 25°C 2387 13 639 IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 125°C 7253 21 299 IF = 150A, diF/dt = -1000A/ μs VR = 400V, TC = 125°C 12075 68 nC Amps ns nC Amps ns nC Amps Characteristic / Test Conditions Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Min Typ Max 0.26 Unit °C/W oz g 0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 1 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.20 0.15 Note: lb·in N·m PDM 0.10 0.05 0 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10 10 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10-5 10-4 -3 -2 TJ (°C) 052-6319 Rev B 12 - 2008 0.099 Dissipated Power (Watts) TC (°C) 0.160 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.0160 0.380 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 400 350 IF, FORWARD CURRENT (A) 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 TJ= 125°C trr, COLLECTOR CURRENT (A) TJ= 55°C TJ= 25°C TJ= 150°C 600 75A 500 400 300 200 100 0 700 150A APT150DL60B2(G) T = 125°C J V = 400V R 14000 Qrr, REVERSE RECOVERY CHARGE (nC) 12000 10000 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage T = 125°C J V = 400V R 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 80 IRRM, REVERSE RECOVERY CURRENT (A) T = 125°C J V = 400V R 150A 75A 60 150A 8000 6000 4000 2000 0 300A 75A 40 20 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 200 0 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 150 0.8 0.6 QRR 0.4 50 0.2 Duty cycle = 0.5 TJ = 45°C tRR IF(AV) (A) IRRM 100 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF) Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 1200 1000 800 600 400 200 0 052-6319 Rev B 12 - 2008 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage Vr +18V 0V D.U.T. diF /dt Adjust APT150DL60B2(G) trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 0.25 IRRM Slope = diM/dt trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions T-MAX® [B2] Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Cathode 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 052-6319 Rev B 12 - 2008 Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.