APT150GN120JDQ4

APT150GN120JDQ4 1200V, 150A, VCE(ON) = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short cuircuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 1200V Field Stop • Trench Gate: Low VCE(ON) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability • RoHS Compliant E G C E S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. Ratings 1200 ±30 215 99 450 450A @ 1200V 625 -55 to 150 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor Min 1200 5.0 1.4 - Typ 5.8 1.7 2.08 5 Max 6.5 2.1 300 TBD 600 - Unit Volts μA nA Ω 050-7627 Rev A 01-2008 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT150GN120JDQ4 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 150A TJ = 150°C, RG = 1.0Ω , VGE = 15V, L = 100μH, VCE= 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V 4 5 7 Min 450 - Typ 9500 500 400 9.5 800 70 430 Max - Unit pF V Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy nC A 55 65 675 85 22 27 15 55 65 780 175 23 35 22 mJ ns μJ ns IC = 150A RG = 1.0Ω 7 TJ = +25°C Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy 4 5 6 Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 150A RG = 1.0Ω 7 TJ = +125°C - Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions R R θJC θJC Min 2500 Typ 29.2 - Max 0.20 Unit °C/W Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws. RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 0.56 10 1.1 g in·lbf N·m Volts WT Torque VIsolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7627 Rev A 01-2008 Typical Performance Curves 300 V GE APT150GN120JDQ4 300 6V IC, COLLECTOR CURRENT (A) 250 200 150 5V 100 50 0 4.5V 4V 5.5V 6.5V, 10 &15 V = 15V IC, COLLECTOR CURRENT (A) 250 200 TJ= -55°C TJ= 25°C TJ= 125°C TJ= 150°C 150 100 50 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST