APT150GN60LDQ4G

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability APT150GN60LDQ4(G) Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 2 1 All Ratings: TC = 25°C unless otherwise specified. APT150GN60LDQ4(G) UNIT Volts 600 ±30 220 123 450 450A @ 600V 536 -55 to 175 300 Amps Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 2400μA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.05 5.8 1.45 1.65 75 3 6.5 1.85 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 I CES I GES RG(int) μA nA Ω 10-2008 050-7633 Rev A Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor 2000 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Typical Performance Curves Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 4 APT150GN60LDQ4(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 150A TJ = 175°C, R G = 4.3Ω 8, VGE = 15V, L = 100μH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 150A 5 6 MIN TYP MAX UNIT 9200 350 300 9.5 970 65 510 450 44 110 430 60 8810 8615 4295 44 110 480 95 8880 9735 5460 μJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 54 65 RG = 1.0Ω 8 TJ = +25°C Turn-on Switching Energy (Diode) 7 μJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 150A RG = 1.0Ω 8 TJ = +125°C Turn-on Switching Energy (Diode) 67 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R R θJC θJC Min 2500 - Typ - Max 0.28 .30 Unit °C/W Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight VIsolation WT 6.1 - gm 1 Continuous current limited by case temperature. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 For Combi devices, Ices includes both IGBT and FRED leakages 4 See MIL-STD-750 Method 3471. 10-2008 Rev A 050-7633 5 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 6 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 350 300 TJ = 25°C 250 TJ = 125°C 200 TJ = 175°C 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST