1000V 15A APT15D100K APT15D100KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
• Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC
PRODUCT FEATURES
• Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current
PRODUCT BENEFITS
• Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density
1 - Cathode 2 - Anode Back of Case - Cathode
1
2
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25°C unless otherwise specified.
APT15D100K(G) UNIT
1000
Volts
Maximum Average Forward Current (TC = 130°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec.
15 31 80 -55 to 175 300
°C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125°C MIN TYP MAX UNIT
1.9 2.2 1.7
2.3
Volts
250 500 17
Microsemi Website - http://www.microsemi.com
053-0010 Rev F
pF
11-2006
µA
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/µs VR = 667V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 667V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 667V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN TYP
APT15D100K(G)
MAX UNIT ns
28 260 540 4 300 1550 9 150 2150 26 nC Amps ns nC Amps ns nC Amps
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W
1.18 80 0.07 1.9 10
oz g lb•in N•m
Torque
Maximum Mounting Torque
1.1
Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.9 1.00 0.7 0.80 0.5
Note:
0.60
PDM
0.40
t1 t2
0.3
0.20 0
0.1 0.05 10
-5
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (°C) 0.676 °C/W 0.00147 J/°C
11-2006
Power (watts) 0.504 °C/W Case temperature (°C) 0.0440 J/°C
053-0010 Rev F
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
45 trr, REVERSE RECOVERY TIME (ns) 40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 150°C TJ = -55°C TJ = 125°C TJ = 25°C 400 30A 350 300 15A 250
APT15D100K(G)
T = 125°C J V = 667V
R
7.5A 200 150 100 50
0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 3500 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125°C J V = 667V
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 7.5A 5 0
T = 125°C J V = 667V
R
0
3000 2500 2000
R
30A
30A
15A 1500 1000 7.5A 500 0
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 0.8 0.6 0.4 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5 0
Duty cycle = 0.5 T = 175°C
J
IRRM
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 120 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
100 80 60 40 20 0 11-2008 1 053-0010 Rev F
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
APT15D100K(G)
Vr +18V 0V D.U.T. 30μH
trr/Qrr Waveform
diF /dt Adjust
APT10078B2LL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K) Package Outline
053-0010 Rev F 11-2008
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
