APT15D60K

600V 15A APT15D60K APT15D60SA APT15D60KG* APT15D60SAG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses 1 D2PAK 2 • Low Noise Switching • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Increased System Power Density 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT15D60K(G)_SA(G) UNIT 600 Volts Maximum Average Forward Current (TC = 133°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 15 32 110 -55 to 175 300 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125°C MIN TYP MAX UNIT 1.6 1.9 1.4 1.8 Volts 250 500 23 pF Microsemi Website - http://www.microsemi.com 053-6010 Rev K 11-2008 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT15D60K(G)_SA(G) TYP MAX UNIT ns 21 80 95 3 150 520 7 60 810 22 nC Amps ns nC Amps ns nC Amps - THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W 1.35 80 0.07 1.9 10 oz g lb•in N•m Torque Maximum Mounting Torque 1.1 Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1.40 Z JC, THERMAL IMPEDANCE (°C/W) θ 1.20 1.00 0.80 0.5 0.60 0.40 0.20 0 0.3 Note: 0.9 0.7 PDM t1 t2 0.1 0.05 10 -5 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 11-2008 0.583 °C/W Power (watts) 0.767 °C/W Case temperature (°C) 0.00222 J/°C 053-6010 Rev K 0.0598 J/°C FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 60 trr, REVERSE RECOVERY TIME (ns) 180 160 140 120 100 80 60 40 20 15A 30A APT15D60K(G)_SA(G) T = 125°C J V = 400V R IF, FORWARD CURRENT (A) 50 40 30 TJ = 125°C TJ = 150°C 10 TJ = -55°C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1200 0 0 TJ = 25°C 7.5A 20 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 T = 125°C J V = 400V R 0 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V R 30A 1000 800 15A 600 400 7.5A 200 0 25 30A 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 0.8 0.6 0.4 0.2 0.0 Qrr IRRM trr Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 40 35 30 IF(AV) (A) 25 20 15 10 5 0 Duty cycle = 0.5 T = 175°C J 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 160 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 0 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 053-6010 Rev K 11-2008 APT15D60K(G)_SA(G) Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT5018BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn TO-263 D2 (SA) Package Outline e3 100% Sn Cathode (Heat Sink) 4.45 (.175) 4.57 (.180) 1.27 (.050) 1.32 (.052) 10.06 (.396) 10.31(.406) 1.40 (.055) 1.65 (.065) 7.54 (.297) 7.68 (.303) 0.050 (.002) 0.330 (.013) 0.432 (.017) 0.000 (.000) 0.254 (.010) 2.62 (.103) 2.72 (.107) 1.22 (.048) 1.32 (.052) {3 Plcs.} 8.51 (.335) 8.76(.345) 6.02 (.237) 6.17 (.243) 0.762 (.030) 0.864 (.034) {2 Plcs.} 2.54 (.100) BSC {2 Plcs.} 3.68 (.145) 6.27 (.247) (Base of Lead) Heat Sink (Cathode) and Leads are Plated 11-2008 Anode Cathode 053-6010 Rev K Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.