APT15DQ100K

1000V 15A APT15DQ100K APT15DQ100KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density 1 TO-220 2 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT15DQ100K(G) UNIT 1000 Volts Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 15 29 80 20 -55 to 175 300 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 1000V VR = 1000V, TJ = 125°C MIN TYP MAX UNIT 2.5 3.06 1.92 3.0 Volts 100 500 12 Microsemi Website - http://www.microsemi.com 053-4226 Rev B pF 7-2006 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/µs VR = 667V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 667V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 667V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN TYP 20 APT15DQ100K(G) MAX UNIT ns nC - 235 185 3 300 810 6 125 1150 19 - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g 1.18 0.07 1.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.20 Z JC, THERMAL IMPEDANCE (°C/W) θ D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7 0.5 Note: PDM 0.3 t1 t2 0.1 0.05 10 -5 SINGLE PULSE 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 7-2006 0.676 Dissipated Power (Watts) 0.00147 0.0440 TC (°C) 0.504 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 053-4226 Rev B FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 45 40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 175°C trr, REVERSE RECOVERY TIME (ns) 400 350 300 250 200 150 100 50 15A 30A APT15DQ100K(G) T = 125°C J V = 667V R TJ = 125°C TJ = 25°C TJ = -55°C 7.5A 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 7.5A 15A T = 125°C J V = 667V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25 T = 125°C J V = 667V R 0 30A 30A 20 15 15A 10 7.5A 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 trr 0.8 0.6 0.4 0.2 0.0 IRRM Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5 Duty cycle = 0.5 T = 175°C J 0 trr Qrr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 053-4226 Rev B 7-2006 30 APT15DQ100K(G) Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT10035LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn 10.66 (.420) 9.66 (.380) 1.39 (.055) 0.51 (.020) Cathode 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) 12.192 (.480) 9.912 (.390) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139) 0.080 (2.032) MAX. 14.73 (.580) 12.70 (.500) 3.683 (.145) MAX. 7-2006 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) Cathode Anode 053-4226 Rev B 1.01 (.040) 2-Plcs. .83 (.033) 5.33 (.210) 4.83 (.190) 1.77 (.070) 2-Plcs. 1.15 (.045) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.