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APT15DQ60BCTG

APT15DQ60BCTG

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APT15DQ60BCTG - ULTRAFAST SOFT RECOVERY RECTIFIER DIODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
APT15DQ60BCTG 数据手册
600V 2x15A APT15DQ60BCT APT15DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density 1 (BCT) TO -2 4 7 2 3 1 2 3 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings Per Leg: TC = 25°C unless otherwise specified. APT15DQ60BCT(G) UNIT 600 Volts Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 15 30 110 20 -55 to 175 300 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 2.0 2.5 1.56 2.4 Volts 500 25 µA pF 053-4204 Rev D 7-2006 25 DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT15DQ60BCT(G) TYP 15 MAX UNIT ns nC - 19 21 2 105 250 5 55 420 15 - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g 1.35 0.22 5.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.40 Z JC, THERMAL IMPEDANCE (°C/W) θ 1.20 1.00 0.80 0.60 0.40 0.20 0 0.3 D = 0.9 0.7 0.5 Note: PDM t1 t2 0.1 0.05 10 -5 SINGLE PULSE 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) TC (°C) 0.583 0.767 7-2006 Dissipated Power (Watts) 0.00222 0.0598 053-4204 Rev D ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 60 50 IF, FORWARD CURRENT (A) TJ = 175°C 40 30 20 10 0 TJ = 125°C trr, REVERSE RECOVERY TIME (ns) 140 120 30A 100 80 60 40 20 0 15A APT15DQ60BCT(G) T =125°C J V =400V R 7.5A TJ = -55°C 0 TJ = 25°C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage T =125°C J V =400V R 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =400V R 700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0 30A 20 30A 15 15A 10 15A 7.5A 7.5A 5 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 Duty cycle = 0.5 T =175°C J 0 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 0.8 IRRM 0.6 trr 0.4 0.2 0.0 Qrr trr Qrr IF(AV) (A) 20 15 10 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 90 CJ, JUNCTION CAPACITANCE (pF) 80 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 7-2006 1 053-4204 Rev D 0 Vr +18V 0V D.U.T. 30µH diF /dt Adjust APT6017LLL APT15DQ60BCT(G) trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Common Cathode 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 7-2006 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Anode 1 Common Cathode Anode 2 053-4204 Rev D 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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