APT15GP60B

APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 400V, 19A • 200 kHz operation @ 400V, 12A • SSOA rated G C E All Ratings: TC = 25°C unless otherwise specified. APT15GP60B_S UNIT 600 ±20 ±30 56 27 65 65A @ 600V 250 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 2 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-7413 Rev C I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA 5-2006 I CES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) µA 2500 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 1 APT15GP60B_S Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 15A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 15A 4 MIN TYP MAX UNIT pF V nC A 1685 210 15 7.5 55 12 15 65 8 12 29 58 130 152 121 8 12 69 88 130 267 268 MIN TYP MAX UNIT °C/W gm ns ns Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 44 55 R G = 5Ω TJ = +25°C Turn-on Switching Energy (With Diode) 5 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 15A R G = 5Ω TJ = +125°C Turn-on Switching Energy (With Diode) 66 µJ THERMAL AND MECHANICAL CHARACTERISTICS .50 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7413 Rev C 5-2006 TYPICAL PERFORMANCE CURVES 30 25 20 15 10 5 0 TC=25°C TC=125°C TC=-55°C VGE = 15V. 250µs PULSE TEST