APT15S20KCT

1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 1 3 2 APT15S20KCT(G) 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS • Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL EVAL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings Are Per Leg: TC = 25°C unless otherwise specified. APT15S20KCT(G) UNIT 200 Volts Maximum Average Forward Current (TC = 122°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 8mH) 25 63 110 -55 to 150 300 15 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125°C MIN TYP MAX UNIT .80 .91 .67 .83 Volts .250 5.0 75 Microsemi Website - http://www.microsemi.com 053-6037 Rev C pF 11-2008 mA DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -700A/μs VR = 133V, TC = 125°C IF = 15A, diF/dt = -200A/μs VR = 133V, TC = 125°C IF = 15A, diF/dt = -200A/μs VR = 133V, TC = 25°C Test Conditions MIN TYP MAX UNIT ns nC 80 210 5 100 440 8 55 580 18 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g 1.1 80 0.07 1.9 10 1.1 Torque Maximum Mounting Torque lb•in N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1.2 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.9 1.0 0.8 0.7 0.6 0.5 Note: 0.4 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE PDM t1 t2 0.2 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 11-2008 0.241 °C/W Power (watts) 0.858 °C/W Case temperature (°C) 0.000249 J/°C 053-6037 Rev C 0.000678 J/°C FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVE 60 50 IF, FORWARD CURRENT (A) 40 30 20 10 0 TJ = -55°C TJ = 150°C TJ = 25°C TJ = 125°C trr, REVERSE RECOVERY TIME (ns) 140 120 100 80 60 40 20 0 T =125°C J V =133V R APT15S20KCT(G) 30A 15A 7.5A 0 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage T =125°C J V =133V 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =133V R 0 1200 Qrr, REVERSE RECOVERY CHARGE (nC) 1000 800 600 400 200 0 7.5A 15A R 30A 30A 20 15 10 7.5A 5 15A 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 IRRM 0.8 Qrr Qrr trr 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) Duty cycle = 0.5 T =150°C J 0 0 200 Kf, DYNAMIC PARAMETERS (Normalized to 700A/μs) 0.6 0.4 0.2 0.0 trr 40 30 20 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 1000 CJ, JUNCTION CAPACITANCE (pF) 0 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 75 800 600 200 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 .6 1 053-6037 Rev C 11-2008 400 APT15S20KCT(G) Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT20M36BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 Package Outline e3 100% Sn 053-6037 Rev C 11-2008 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.