APT18M80B_09

APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. TO -2 47 D3PAK APT18M80B APT18M80S D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 19 12 70 ±30 795 9 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N·m -55 0.11 150 °C 300 oz g in·lbf 04-2009 050-8112 Rev B Min Typ Max 500 0.25 Unit W °C/W Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 9A VGS = VDS, ID = 1mA VDS = 800V VGS = 0V TJ = 25°C TJ = 125°C APT18M80B_S Typ 0.87 0.40 4 -10 Max Unit V V/°C Ω V mV/°C µA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 800 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 3 0.53 5 100 500 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 9A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 17 3760 65 375 175 Max Unit S pF VGS = 0V, VDS = 0V to 533V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 9A, VDS = 400V Resistive Switching VDD = 533V, ID = 9A RG = 4.7Ω 6 , VGG = 15V 90 120 20 60 21 31 95 27 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 19 Unit G S A 70 1.0 860 16 10 V ns µC V/ns ISD = 9A, TJ = 25°C, VGS = 0V ISD = 9A, VDD = 100V 3 diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 9A, di/dt ≤1000A/µs, VDD = 533V, TJ = 125°C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 19.63mH, RG = 10Ω, IAS = 9A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 1.19E-8/VDS^2 + 1.53E-8/VDS + 5.89E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Rev B 050-8112 04-2009 APT18M80B_S 50 V GS 25 = 10V T = 125°C J TJ = -55°C V GS = 10, & 15V 40 ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A) TJ = 25°C 20 V GS = 6, & 6.5V 5.5V 30 15 20 TJ = 125°C 10 5V 10 TJ = 150°C 5 4.5V 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 9A 70 VDS> ID(ON) x RDS(ON) MAX. 2.5 ID, DRAIN CURRENT (A) 60 50 40 250µSEC. PULSE TEST @