APT200GT60JR

APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified. Ratings 600 Volts ±30 195 100 600 600A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±30V) Min 600 3 1.6 - Typ 4 2.0 2.5 - Max 5 Unit Volts 2.5 25 μA 300 nA 052-6298 Rev C 5 - 2009 ICES IGES 1000 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT200GT60JR Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 200A TJ = 150°C, RG = 2.2Ω , VGE = 15V, L = 100μH, VCE= 600V Inductive Switching (25°C) VCC = 400V VGE = 15V 4 5 Min 600 - Typ 8650 546 1180 7.5 946 58 430 Max - Unit pF V Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy nC A 72 160 952 212 9193 19290 71 157 1030 202 10460 20210 μJ ns μJ ns IC = 200A RG = 2.2Ω TJ = +25°C Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy 4 5 Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 200A RG = 2.2Ω TJ = +125°C - Turn-Off Switching Energy 6 Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions RθJC RθJC WT Torque VIsolation Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Min 2500 Typ 29.2 - Max 0.21 Unit °C/W N/A 10 1.1 g in·lbf N·m Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. 052-6298 Rev C 5 - 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 250 225 IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST