APT20M45BVR

APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement APT20M45BVR(G) mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO -24 7 D3 FEATURES • Faster switching • Lower Leakage • 100% Avalanche tested • Popular TO-247 Package • RoHS compliant G S D Absolute Maximum Ratings Symbol VDSS ID IDM VGS VGSM PD TJ, TSTG TL IAR EAR EAS All Ratings: TC = 25°C unless otherwise specified. Ratings 200 56 224 ±30 ±40 300 2.4 -55 to 150 300 56 30 1300 Parameter Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 Unit Volts Amps Volts Watts W/C° °C Amps mJ Static Characteristics Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) TJ = 25°C unless otherwise specified Min 200 56 0.045 25 250 ±100 2 4 2 Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) 2 Typ Max Unit Volts Amps Ohms μA 050-5514 Rev D 3 - 2010 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Ciss Coss Crss Qg Qge Qgd td(on) tr td(off) tf APT20M45BVR(G) Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD= 0.5VDSS ID = ID[cont.]@ 25°C VGS = 10V VDD= 0.5VDSS ID = ID[cont.]@ 25°C RG = 1.6Ω Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate-Source Charge Gate- Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ 4050 980 300 130 30 55 12 14 43 7 Max 4860 1375 450 195 45 80 24 28 70 14 Unit pF nC ns Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr) Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) 1 Min Typ Max 56 224 1.3 Unit Amps Volts nS μC Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) 280 3.5 Thermal Characteristics Symbol RθJC RθJA 1 Characteristic Junction to Case Junction to Ambient Min Typ Max 0.42 40 Unit C °/W 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 050-5514 Rev D 3 - 2010 Typical Performance Curves APT20M45BVR(G) 050-5514 Rev D 3 - 2010 Typical Performance Curves APT20M45BVR(G) TO-247 (B) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5514 Rev D 3 - 2010 Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.