APT24F50B_09

APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT24F50B APT24F50S D G Single die FREDFET S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 24 15 82 ±30 495 11 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 N·m -55 0.15 150 °C 300 oz g in·lbf 09-2009 050-8132 Rev D Min Typ Max 335 0.37 Unit W °C/W Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 11A VGS = VDS, ID = 1mA VDS = 500V VGS = 0V TJ = 25°C TJ = 125°C AP24F50B_S Typ 0.60 0.21 4 -10 Max Unit V V/°C Ω V mV/°C µA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 500 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.24 5 250 1000 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 11A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 17 3630 50 390 225 Max Unit S pF VGS = 0V, VDS = 0V to 333V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 11A, VDS = 250V Resistive Switching VDD = 333V, ID = 11A RG = 4.7Ω 6 , VGG = 15V 115 90 21 41 16 19 41 14 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 24 Unit G S A 82 1.0 210 400 0.68 1.64 7.1 9.7 20 V ns µC A V/ns ISD = 11A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 11A 3 diSD/dt = 100A/µs VDD = 100V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 11A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 8.18mH, RG = 25Ω, IAS = 11A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. Rev D 09-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.43E-8/VDS^2 + 1.96E-8/VDS + 5.61E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8132 APT24F50B_S 80 V GS 40 = 10V TJ = -55°C T = 125°C J V GS = 7 &10V 6.5V 70 ID, DRAIN CURRENT (A) 60 50 TJ = 25°C 35 ID, DRIAN CURRENT (A) 30 25 20 15 10 6V 40 30 20 TJ = 150°C 5.5V 5V 10 0 TJ = 125°C 5 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 70 VDS> ID(ON) x RDS(ON) MAX. RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 NORMALIZED TO VGS = 10V @ 11A 60 ID, DRAIN CURRENT (A) 50 250µSEC. PULSE TEST @