APT25GT120BRDL

TYPICAL PERFORMANCE CURVES APT25GT120BRDL(G) 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode • SSOA Rated • RoHS Compliant Typical Applications • Induction Heating • Welding • Medical • High Power Telecom • Resonant Mode Phase Shifted Bridge G C E TO -2 47 C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT25GT120BRDL(G) UNIT Volts 1200 ±30 54 25 75 75A @ 1200V 347 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 2.7 5.5 3.2 3.9 200 2 6.5 3.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 I CES I GES μA nA 6-2009 052-6349 Rev B Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1250 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT25GT120BRDL(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 25A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100μH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V I C = 25A 4 5 MIN TYP MAX UNIT 1845 170 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 μJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 RG = 5Ω TJ = +25°C Turn-on Switching Energy (Diode) 6 μJ Inductive Switching (125°C) VCC = 800V VGE = 15V I C = 25A RG = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .36 1.4 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6-2009 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6349 Rev B TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 2 4 6 8 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST