APT26F120B2 APT26F120L
1200V, 27A, 0.58Ω Max, trr ≤335ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
T-Max®
TO-264
APT26F120B2
APT26F120L
D
Single die FREDFET
G S
FEATURES
• Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 27 16 105 ±30 2165 14
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1
Microsemi Website - http://www.microsemi.com
Min
Typ
Max 1135 0.11
Unit W °C/W
0.11 -55 150 °C 300
050-8143 Rev C 5-2009
oz g in·lbf N·m
Static Characteristics
Symbol
VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS
TJ = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25°C TJ = 125°C
APT26F120B2_L
Typ 1.41 0.48 4 -10 Max Unit V V/°C Ω V mV/°C µA nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1200
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.58 5 250 1000 ±100
VGS = ±30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25°C unless otherwise specified
Test Conditions VDS = 50V, ID = 14A
VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 31 9670 115 715 275
Max
Unit S
pF
VGS = 0V, VDS = 0V to 800V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 14A, VDS = 600V Resistive Switching VDD = 800V, ID = 14A RG = 2.2Ω 6 , VGG = 15V
140 300 50 140 50 31 170 48
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 27
Unit
G S
A 105 1.1 335 640 1.72 4.67 11 16 25 V ns µC A V/ns
ISD = 14A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 14A 3 VDD = 100V diSD/dt = 100A/µs TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 14A, di/dt ≤1000A/µs, VDD = 800V, TJ = 125°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 22.09mH, RG = 25Ω, IAS = 14A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
050-8143 Rev C 5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -4.40E-7/VDS^2 + 5.34E-8/VDS + 7.59E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT26F120B2_L
70
V
GS
25
= 10V T = 125°C
J
60 ID, DRAIN CURRENT (A) 50 40 30
TJ = 25°C
V
GS
= 6, 7, 8 & 9V
ID, DRIAN CURRENT (A)
TJ = -55°C
20
15
5V
10
20 10 0
TJ = 125°C TJ = 150°C
5
4.5V
0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 100
VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @