APT26M100JCU3

APT26M100JCU3 ISOTOP® Buck chopper MOSFET + SiC chopper diode Power module D VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features G S • Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated A • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration S D A G ISOTOP® Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 1000 26 20 140 ±30 396 543 18 Unit V September, 2009 1-5 APT26M100JCU3 – Rev 0 A V mΩ W A Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT26M100JCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 100 500 396 5 ±100 Unit µA mΩ V nA 3 330 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 18A RG = 2.2Ω Min Typ 7868 825 104 305 55 145 44 40 150 38 ns nC Max Unit pF SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 1200 Typ 32 56 10 1.6 2.3 80 96 69 Max 200 1000 1.8 3 Unit V µA A V nC pF IF = 10A, VR = 600V di/dt =500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 VGS=10V ID=18A 30 TJ=125°C 20 10 TJ=25°C 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6 VDS=800V ID=18A TJ=25°C VDS=500V VDS=200V Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 10000 1000 100 10 1 Ciss Coss Crss 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 September, 2009 4-5 APT26M100JCU3 – Rev 0 VDS, Drain to Source Voltage (V) www.microsemi.com APT26M100JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (°C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.3 0.7 0.5 0.9 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100 TJ=25°C 20 IF Forward Current (A) 16 TJ=75°C IR Reverse Current (µA) 75 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage TJ=125°C 50 TJ=75°C TJ=125°C TJ=175°C TJ=25°C 25 TJ=175°C 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 700 C, Capacitance (pF) 600 500 400 300 200 100 0 September, 2009 5-5 APT26M100JCU3 – Rev 0 1 10 100 VR Reverse Voltage 1000 ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com