APT2X100D100J

2 3 2 3 2 1 4 1 4 3 4 1 Anti-Parallel APT2X100D100J Parallel APT2X101D100J S ISOTOP ® 2 T-2 O 7 "UL Recognized" file # E145592 APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular SOT-227 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2X101_100D100J UNIT Volts 1000 95 131 1000 -55 to 175 300 Maximum Average Forward Current (TC = 77°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Amps °C STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125°C MIN TYP MAX UNIT 1.9 2.2 1.7 2.5 Volts 250 500 110 Microsemi Website - http://www.microsemi.com 053-0007 Rev G pF 9-2009 μA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MIN - APT2X101_100D100J TYP MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/μs VR = 667V, TC = 125°C IF = 100A, diF/dt = -200A/μs VR = 667V, TC = 125°C IF = 100A, diF/dt = -200A/μs VR = 667V, TC = 25°C 43 300 800 7 360 4050 19 170 7400 70 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .41 20 1.03 29.2 10 1.1 Torque Maximum Terminal & Mounting Torque lb•in N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 0.3 0.1 0.05 10-4 Note: PDM t1 t2 SINGLE PULSE 10-3 10-2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-0007 Rev G 9-2009 TYPICAL PERFORMANCE CURVES 300 250 IF, FORWARD CURRENT (A) 200 150 100 50 TJ = -55°C 0 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =667V R 600 trr, REVERSE RECOVERY TIME (ns) 500 200A 400 300 200 100 0 100A APT2X101_100D100J T =125°C J V =667V R TJ = 150°C 50A TJ = 125°C TJ = 25°C 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 80 T =125°C J V =667V R 0 200 10000 Qrr, REVERSE RECOVERY CHARGE (nC) 200A 100A 6000 70 60 50 40 30 20 10 0 0 200A 8000 4000 50A 2000 100A 50A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 trr 1.0 IRRM trr Qrr 0 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 140 120 100 IF(AV) (A) 80 60 40 Duty cycle = 0.5 T =150°C J 200 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0.8 0.6 0.4 0.2 0.0 Qrr 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 1200 1000 800 600 400 200 0 0 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 75 CJ, JUNCTION CAPACITANCE (pF) 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage .6 1 053-0007 Rev G 9-2009 APT2X101_100D100J Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT75GP120B2LL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anti-parallel APT2x100DQ60J Parallel APT2x101DQ60J 9-2009 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Anode 2 Cathode 1 Cathode 1 Anode 1 053-0007 Rev G Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.